208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Nanotube semiconductor devices
#1502Semiconductor device
#1503Partially biased isolation in semiconductor device
#1504Partially biased isolation in semiconductor devices
#1505Segmented power transistor
#1506METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#1507Semiconductor device with stripe-shaped trench gate structures and gate connector structure
#1508Semiconductor device
#1509MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POLYOXIDE PROCESS FOR SELF-ALIGNED CONTACTS
#1510Semiconductor device and method of manufacturing semiconductor device
#1511VERTICAL POWER MOSFET
#1512Power semiconductor device comprising trench structures
#1513Semiconductor device
#1514Power semiconductor device having trench gate type IGBT and diode regions
#1515Reduced area power devices using deep trench isolation
#1516Device architecture and method for improved packing of vertical field effect devices
#1517Semiconductor device
#1518Semiconductor device
#1519Trench IGBT with waved floating P-well electron injection
#1520IGBT with waved floating P-Well electron injection
#1521Vertical high-voltage MOS transistor
#1522IGBT with waved floating P-well electron injection
#1523Memory cell having closed curve structure
#1524POWER TRANSISTOR DEVICE AND PROTECTION METHOD THEREFOR
#1525Semiconductor Device with Contact Structures Extending Through an Interlayer and Method of Manufacturing
#1526Silicon carbide semiconductor device
#1527Semiconductor device and manufacturing method thereof
#1528Semiconductor device and method of manufacturing same
#1529Latch-up free power transistor
#1530Semiconductor device
#1531Field effect transistor having loop distributed field effect transistor cells
#1532Field effect transistor having two-dimensionally distributed field effect transistor cells
#1533Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
#1534Semiconductor device and method of manufacturing the same
#1535Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
#1536Insulated gate power devices with reduced carrier injection in termination area
#1537Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
#1538Semiconductor device and manufacturing method of the same
#1539IGBT
#1540Semiconductor device and method of manufacturing semiconductor device
#1541Semiconductor device and transistor cell having a diode region
#1542Facilitation of increased locking range transistors
#1543Semiconductor device and semiconductor device manufacturing method
#1544Semiconductor device with contact groove arrangements providing improved performance
#1545Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#1546Method of manufacturing a semiconductor structure and semiconductor device
#1547Integrated channel diode
#1548IGBT semiconductor device
#1549Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device
#1550Semiconductor device and method for manufacturing the semiconductor device
#1551Semiconductor device
#1552Semiconductor device
#1553Desaturable semiconductor device with transistor cells and auxiliary cells
#1554Vertical JFET made using a reduced mask set
#1555SPLIT-GATE DEVICES
#1556Semiconductor device
#1557Semiconductor device with a switchable and a non-switchable diode region
#1558Semiconductor device and semiconductor device manufacturing method
#1559Insulated gate type semiconductor device
#1560Controlling the Reflow Behaviour of BPSG Films and Devices Made Thereof
#1561Lateral DMOS device with dummy gate
#1562Semiconductor device having a non-depletable doping region
#1563Semiconductor device and manufacturing method thereof
#1564Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode
#1565Charge compensation device and manufacturing therefor
#1566Power semiconductor device edge structure
#1567Semiconductor devices
#1568Lateral super-junction MOSFET device and termination structure
#1569Semiconductor device
#1570Including low and high-voltage CMOS devices in CMOS process
#1571Semiconductor device and method of manufacturing semiconductor device
#1572Power semiconductor device
#1573Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method
#1574High Voltage Vertical FPMOS Fets
#1575Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
#1576Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#1577Semiconductor device
#1578Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
#1579Transistor with improved avalanche breakdown behavior
#1580Transistor with field electrodes and improved avalanche breakdown behavior
#1581Semiconductor device and method for manufacturing the same
#1582Integrated termination for multiple trench field plate
#1583Semiconductor device with suppressed two-step on phenomenon
#1584Semiconductor device and method of manufacturing the same
#1585Split gate semiconductor device with curved gate oxide profile
#1586Double-sided vertical semiconductor device with thinned substrate
#1587Semiconductor device comprising regions of different current drive capabilities
#1588Semiconductor device capable of high-voltage operation
#1589Semiconductor device
#1590Stripe-shaped electrode structure including a main portion with a field electrode and an end portion terminating the electrode structure
#1591High voltage field balance metal oxide field effect transistor (FBM)
#1592Semiconductor apparatus
#1593Semiconductor device
#1594Reverse conducting IGBT
#1595Semiconductor device comprising electrostatic discharge protection structure
#1596Hybrid active-field gap extended drain MOS transistor
#1597Vertical transistor with improved robustness
#1598Devices, components and methods combining trench field plates with immobile electrostatic charge
#1599Transistor Arrangement Including Power Transistors and Voltage Limiting Means
#1600SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
#1601Semiconductor device having a temperature-detecting diode
#1602Semiconductor device
#1603IGBT semiconductor device
#1604Semiconductor device
#1605Semiconductor device and method of manufacturing semiconductor device
#1606Processing a semiconductor wafer
#1607Semiconductor device
#1608Structure of trench-vertical double diffused MOS transistor and method of forming the same
#1609Semiconductor device having a breakdown voltage holding region
#1610Power semiconductor device and method therefor
#1611Compliant bipolar micro device transfer head with silicon electrodes
#1612Semiconductor Devices and Methods for Forming a Semiconductor Device
#1613Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing
#1614Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions
#1615Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device
#1616NANO-TUBE MOSFET TECHNOLOGY AND DEVICES
#1617Lateral high voltage transistor
#1618Semiconductor device and manufacturing method of semiconductor device
#1619Semiconductor device comprising a transistor
#1620Semiconductor device
#1621Method of producing a semiconductor component arrangement comprising a trench transistor
#1622Lateral MOSFET with buried drain extension layer
#1623Semiconductor device with cell trench structures and a contact structure
#1624Semiconductor device having a channel separation trench
#1625Semiconductor device with rear-side insert structure
#1626Field plate trench semiconductor device with planar gate
#1627Nanotube semiconductor devices
#1628Edge termination for semiconductor devices and corresponding fabrication method
#1629Method of manufacturing a semiconductor device having a rear-side insert structure
#1630Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
#1631Semiconductor device comprising auxiliary trench structures and integrated circuit
#1632Semiconductor Device with Gate Fins
#1633Semiconductor device comprising planar gate and trench field electrode structure
#1634Semiconductor device
#1635Composite semiconductor device with different channel widths
#1636Insulated gate bipolar transistor with improved on/off resistance
#1637Trench MOSFET shield poly contact
#1638Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
#1639Semiconductor device and manufacturing method thereof
#1640Methods for fabricating anode shorted field stop insulated gate bipolar transistor
#1641Semiconductor device and manufacturing method
#1642Semiconductor device
#1643Methods of manufacturing trench semiconductor devices with edge termination structures
#1644SEMICONDUCTOR DEVICE
#1645Semiconductor device
#1646Semiconductor device
#1647Semiconductor device
#1648Semiconductor package for a lateral device and related methods
#1649Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
#1650SEMICONDUCTOR DEVICE
#1651Semiconductor device
#1652Semiconductor device
#1653Semiconductor device having metal layer and method of fabricating same
#1654Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
#1655Super junction semiconductor device having columnar super junction regions extending into a drift layer
#1656Semiconductor device and method of manufacturing the same
#1657SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1658Semiconductor device
#1659Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
#1660IGBT having a deep superjunction structure
#1661Bipolar semiconductor device having a charge-balanced inter-trench structure
#1662Semiconductor device with first and second field electrode structures
#1663IGBT having an inter-trench superjunction structure
#1664Power semiconductor device including well extension region and field-limiting rings
#1665Semiconductor device
#1666Insulated gate bipolar transistor
#1667Power semiconductor device
#1668SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
#1669Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
#1670Method for manufacturing isolation structure integrated with semiconductor device
#1671Power MOSFET device structure for high frequency applications
#1672MOS-based power semiconductor device having increased current carrying area and method of fabricating same
#1673Semiconductor device comprising a switch
#1674Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
#1675Medium voltage MOSFET device
#1676Semiconductor device
#1677Silicon carbide semiconductor device and method of manufacturing the same
#1678Medium high voltage MOSFET device
#1679Semiconductor device provided with an IE type trench IGBT
#1680Semiconductor device
#1681Semiconductor device having low-dielectric-constant film
#1682Semiconductor device and a method for forming a semiconductor device
#1683SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
#1684Insulated gate bipolar device
#1685Semiconductor device having a polycrystalline silicon IGFET
#1686Methods of fabricating semiconductor devices including multiple patterning
#1687High voltage semiconductor devices and methods of making the devices
#1688Method of forming a trench in a semiconductor device
#1689Method of operating a reverse conducting IGBT
#1690Ultra high voltage semiconductor device with electrostatic discharge capabilities
#1691Closed cell lateral MOSFET using silicide source and body regions with self-aligned contacts
#1692Wide band gap semiconductor device
#1693Superjunction device and semiconductor structure comprising the same
#1694MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array
#1695Silicon carbide semiconductor device
#1696Metal layout for radio-frequency switches
#1697Semiconductor device with surge current protection
#1698Semiconductor device
#1699Semiconductor device
#1700Semiconductor device, method of manufacturing the same, and power module
#1701Semiconductor device
#1702Semiconductor device
#1703Layout for LDMOS
#1704Method for fabricating a metal high-k gate stack for a buried recessed access device
#1705IGBT having deep gate trench
#1706Semiconductor device having field plate structures and gate electrode structures between the field plate structures
#1707Silicon carbide semiconductor device having a trench with side walls and method for manufacturing same
#1708Semiconductor device and manufacturing method for the semiconductor device
#1709Semiconductor integrated circuit devices
#1710Semiconductor device having overload current carrying capability
#1711Trench MOSFET having reduced gate charge
#1712Trench MOSFET having reduced gate charge
#1713Semiconductor device
#1714Injection control in semiconductor power devices
#1715Manufacturing method of semiconductor apparatus and semiconductor apparatus
#1716SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
#1717Semiconductor device and method for manufacturing the semiconductor device
#1718IGBT device and method for packaging whole-wafer IGBT chip
#1719Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas
#1720Transistor structure with reduced parasitic side wall characteristics
#1721Power semiconductor device
#1722Semiconductor device having switchable regions with different transconductances
#1723Method of producing a semiconductor device
#1724Transistor device with field-electrode
#1725Semiconductor device with stripe-shaped trench gate structures and gate connector structure
#1726Diode structures with controlled injection efficiency for fast switching
#1727SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1728Silicon carbide semiconductor device and method for manufacturing the same
#1729Silicon carbide semiconductor device and method for manufacturing same
#1730Semiconductor devices with cavities
#1731Methods of fabricating semiconductor devices
#1732Electrostatic protective device
#1733Scalable current sense transistor
#1734Semiconductor device
#1735Semiconductor device having semiconductor elements on semiconductor substrate
#1736Vertical FET having reduced on-resistance
#1737Method of manufacturing semiconductor devices using light ion implantation and semiconductor device
#1738Semiconductor devices and methods of manufacturing the same
#1739High voltage lateral DMOS transistor with optimized source-side blocking capability
#1740Semiconductor device
#1741Semiconductor device with a trench electrode
#1742High voltage lateral DMOS transistor with optimized source-side blocking capability
#1743Silicon carbide semiconductor device and method for producing the same
#1744Vertical high-voltage MOS transistor and method of forming the same
#1745Monolithic DMOS transistor in junction isolated process
#1746Super-junction trench MOSFETs with closed cell layout having shielded gate
#1747Gate pad and gate feed breakdown voltage enhancement
#1748Power semiconductor device having trench gate type IGBT and diode regions
#1749High voltage transistor structure
#1750High voltage semiconductor device
#1751IGBT with buried emitter electrode
#1752MOS-bipolar device
#1753Semiconductor Device Having Ridges Running in Different Directions
#1754Power semiconductor device and method of fabricating the same
#1755Power semiconductor device having low on-state resistance
#1756Semiconductor devices including patterns in a source region
#1757SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1758Semiconductor device and manufacturing method of the same
#1759High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#1760Semiconductor device and insulated gate bipolar transistor with transistor cells and sensor cell
#1761Semiconductor device
#1762Semiconductor device
#1763Vertical semiconductor device
#1764Semiconductor device and method of manufacturing semiconductor device
#1765Semiconductor device having trench gate structure and method for manufacturing the semiconductor device
#1766SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SILICON CARBIDE SEMICONDUCTOR DEVICE
#1767Lateral bipolar junction transistors having high current-driving capability
#1768Semiconductor device and manufacturing method for same, as well as power conversion device
#1769Isolation structure integrated with semiconductor device and manufacturing method thereof
#1770Segmented power transistor
#1771Power superjunction MOSFET device with resurf regions
#1772SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING SUPER JUNCTION STRUCTURE
#1773Semiconductor device with temperature-detecting diode
#1774Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#1775Semiconductor device
#1776Lateral field effect transistor device
#1777Corner layout for high voltage semiconductor devices
#1778Silicon carbide semiconductor device
#1779Semiconductor device with auxiliary structure including deep level dopants
#1780Semiconductor device and method of manufacturing a semiconductor device using an alignment layer
#1781Insulated gate type semiconductor device and method for fabricating the same
#1782Semiconductor device and method for manufacturing the same
#1783Semiconductor device and method of manufacturing a semiconductor device
#1784High voltage MOSFET devices and methods of making the devices
#1785Semiconductor structure having integrated snubber resistance
#1786Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types
#1787SUPER-JUNCTION TRENCH MOSFET INTEGRATED WITH EMBEDDED TRENCH SCHOTTKY RECTIFIER
#1788Method of forming a semiconductor device and structure therefor
#1789Semiconductor device employing trenches for active gate and isolation
#1790Method for manufacturing a semiconductor switching device with different local cell geometry
#1791High voltage MOSFET devices and methods of making the devices
#1792Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
#1793Power transistor
#1794Semiconductor device
#1795Semiconductor device including superjunction structure formed using angled implant process
#1796SEMICONDUCTOR DEVICE
#1797Semiconductor device
#1798Termination of super junction power MOSFET
#1799Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method
#1800Semiconductor device