208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device
#1802Trench insulated gate bipolar transistor and manufacturing method thereof
#1803Semiconductor device with current sensor
#1804Semiconductor device with field electrode structure
#1805SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1806SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1807Semiconductor device with field electrode structures, gate structures and auxiliary diode structures
#1808Semiconductor device
#1809Semiconductor device
#1810METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#1811Trench gate trench field plate vertical MOSFET
#1812Trench-gate type semiconductor device and manufacturing method therefor
#1813IGBT with a built-in-diode
#1814Semiconductor device and manufacturing method of semiconductor device
#1815Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
#1816Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
#1817Semiconductor device with field electrode structures in a cell area and termination structures in an edge area
#1818Edge termination for trench gate FET
#1819Semiconductor device and method for manufacturing same
#1820IGBT using trench gate electrode
#1821Devices, components and methods combining trench field plates with immobile electrostatic charge
#1822Semiconductor device with field electrode and contact structure
#1823Semiconductor Device and a Method for Manufacturing a Semiconductor Device
#1824Semiconductor device
#1825Rectifier diode
#1826Field effect transistor and semiconductor device
#1827Trench gate type semiconductor device and method of producing the same
#1828Semiconductor device and semiconductor device manufacturing method
#1829Semiconductor device
#1830Trenched Faraday shielding
#1831Semiconductor device and manufacturing method for the same
#1832Planar srfet using no additional masks and layout method
#1833Electrodes for semiconductor devices and methods of forming the same
#1834Semiconductor package for a lateral device and related methods
#1835Semiconductor device having a breakdown voltage holding region
#1836Semiconductor device and method of manufacturing the same
#1837Semiconductor device
#1838Power MOSFET, an IGBT, and a power diode
#1839Field plate trench transistor and method for producing it
#1840IGBT and method of manufacturing the same
#1841Semiconductor device and method for fabricating semiconductor device
#1842Transistor and method of manufacturing the same
#1843Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method
#1844Semiconductor device and manufacturing method for the same
#1845Edge termination structure having a termination charge region below a recessed field oxide region
#1846Semiconductor device with surface insulating film
#1847Semiconductor device with field electrode and field dielectric
#1848Semiconductor device having a dense trench transistor cell array
#1849Manufacturing method of semiconductor apparatus and semiconductor apparatus
#1850Integrating Schottky diode into power MOSFET
#1851Semiconductor device
#1852Semiconductor device with voltage resistant structure
#1853POWER SEMICONDUCTOR DEVICE
#1854Device structure and methods of making high density MOSFETs for load switch and DC-DC applications
#1855Semiconductor device with power transistor cells and lateral transistors and method of manufacturing
#1856Charge compensation structure and manufacturing therefor
#1857Semiconductor device
#1858Power semiconductor device and corresponding module
#1859Semiconductor device and method for manufacturing the same
#1860Vertical MOSFET device with steady on-resistance
#1861Semiconductor device
#1862Silicon carbide semiconductor device
#1863Semiconductor device and manufacturing method
#1864Power device termination structures and methods
#1865Wide bandgap high-density semiconductor switching device and manufacturing process thereof
#1866Cellular layout for semiconductor devices
#1867Cellular layout for semiconductor devices
#1868Semiconductor switching devices with different local transconductance
#1869Semiconductor switching device with different local threshold voltage
#1870Semiconductor device having an insulated gate bipolar transistor arrangement
#1871Insulated gate bipolar transistor including charge injection regions
#1872Semiconductor device manufacturing method
#1873Semiconductor device
#1874Semiconductor device
#1875Charge reservoir IGBT top structure
#1876Semiconductor device, and method for producing the same
#1877Insulated gate silicon carbide semiconductor device and method for manufacturing same
#1878Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
#1879Semiconductor device
#1880Trench MOSFET having reduced gate charge
#1881Insulated gate turn-off device with turn-off transistor
#1882Semiconductor device
#1883Injection control in semiconductor power devices
#1884Semiconductor device
#1885Semiconductor device
#1886Semiconductor device comprising trench structures
#1887Method of manufacturing a semiconductor device with a continuous silicate glass structure
#1888Semiconductor device provided with an IE type trench IGBT
#1889Device architecture and method for improved packing of vertical field effect devices
#1890Semiconductor devices having super-junction trenches with conductive regions and method of making the same
#1891Power semiconductor device of stripe cell geometry
#1892Semiconductor device manufacturing method including a counter layer for power conversion
#1893Semiconductor device and method of manufacturing the same
#1894Semiconductive device and associated method of manufacture
#1895Silicon-carbide semiconductor device and manufacturing method therefor
#1896Semiconductor device
#1897Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
#1898Super junction semiconductor device having strip structures in a cell area
#1899Semiconductor device
#1900Semiconductor device including transistor
#1901Silicon carbide semiconductor device and manufacturing method thereof
#1902Semiconductor device
#1903Semiconductor device having improved heat dissipation
#1904Controlling Gate Formation for High Density Cell Layout
#1905Gallium nitride power devices using island topography
#1906SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS
#1907Fabrication method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
#1908Integrated transistor structure having a power transistor and a bipolar transistor
#1909Semiconductor device and method for manufacturing the same
#1910Vertical semiconductor device including element active portion and voltage withstanding structure portion, and method of manufacturing the vertical semiconductor device
#1911Switching device for power conversion and power conversion device
#1912Semiconductor device having a semiconductor element and a terminal connected to the semiconductor element
#1913Method of fabricating a lateral insulated gate bipolar transistor
#1914Vertical semiconductor device
#1915Semiconductor device having an insulated gate bipolar transistor arrangement and a method for forming such a semiconductor device
#1916Semiconductor devices and methods of manufacturing the same
#1917Field effect transistor and semiconductor device
#1918Semiconductor device with metal-filled groove in polysilicon gate electrode
#1919Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#1920Semiconductor device for reducing propagation time of gate input signals
#1921Semiconductor device for reducing gate wiring length
#1922Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate
#1923Semiconductor device with semiconductor mesa including a constriction
#1924Semiconductor device and method of manufacturing same
#1925Closed cell lateral MOSFET using silicide source and body regions
#1926Silicon carbide semiconductor device and manufacturing method therefor
#1927Power device configured to reduce electromagnetic interference (EMI) noise
#1928Power superjunction MOSFET device with resurf regions
#1929Semiconductor device
#1930Semiconductor device and inverter using same
#1931Normally on high voltage switch
#1932Trench transistor device
#1933Termination design for high voltage device
#1934Method for forming semiconductor components having self-aligned trench contacts
#1935Semiconductor device, method of manufacturing the same, and power module
#1936Semiconductor device
#1937Semiconductor structure with a doped region between two deep trench isolation structures
#1938Trench MOS semiconductor device
#1939Semiconductor device
#1940Trench power MOSFET and manufacturing method thereof
#1941Semiconductor device and method for manufacturing the same
#1942Transverse ultra-thin insulated gate bipolar transistor having high current density
#1943Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures
#1944Method for manufacturing semiconductor device
#1945Semiconductor device and method for producing the same
#1946SEMICONDUCTOR DEVICE
#1947Semiconductor device
#1948Semiconductor device
#1949Semiconductor device comprising a main region, a current sense region, and a well region
#1950Semiconductor device comprising an diode region and an IGBT region
#1951Semiconductor device
#1952METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
#1953Semiconductor device and production device therefor
#1954Semiconductor device
#1955SEMICONDUCTOR DEVICE
#1956Methods of manufacturing semiconductor devices
#1957IE type trench gate IGBT
#1958Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
#1959Semiconductor device with insert structure at a rear side and method of manufacturing
#1960Superjunction semiconductor device with columnar region under base layer and manufacturing method therefor
#1961Semiconductor device and manufacturing method of the same
#1962SEMICONDUCTOR DEVICE
#1963Method for manufacturing semiconductor device using a semiconductor substrate including silicon and a first conductivity type body region
#1964METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#1965Compliant bipolar micro device transfer head with silicon electrodes
#1966Semiconductor device manufacturing method
#1967Semiconductor device and insulated gate bipolar transistor with barrier structure
#1968Semiconductor device
#1969TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING THREE MASKS PROCESS
#1970Matching of transistors
#1971Semiconductor device with self-aligned contact plugs
#1972Semiconductor device
#1973Systems and methods for CMOS-integrated junction field effect transistors for dense and low-noise bioelectronic platforms
#1974Silicon carbide semiconductor device
#1975MOS-gated power devices, methods, and integrated circuits
#1976Super junction semiconductor device having a compensation structure
#1977Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
#1978Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1979Planar mosfets and methods of fabrication, charge retention
#1980Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1981Semiconductor device and method of manufacturing semiconductor device
#1982Power semiconductor device
#1983POWER SEMICONDUCTOR DEVICE
#1984Trench-gate RESURF semiconductor device and manufacturing method
#1985Superjunction structures for power devices
#1986SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1987Method for manufacturing a semiconductor device and a semiconductor device
#1988Semiconductor device and method for fabricating the same
#1989Power semiconductor device having gate electrode coupling portions for etchant control
#1990Reduced area power devices using deep trench isolation
#1991Semiconductor device
#1992Semiconductor device
#1993Vertical transistor device structure with cylindrically-shaped regions
#1994Insulated gate semiconductor device and method
#1995Semiconductor device with recombination region
#1996Semiconductor device with recombination region
#1997Semiconductor device including a MOSFET and having a super-junction structure
#1998Nanotube semiconductor devices
#1999Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#2000Semiconductor device with high breakdown voltage and manufacture thereof
#2001Metal oxide semiconductor and method of making
#2002Semiconductor device and integrated circuit
#2003Semiconductor device having buried gate electrode structures
#2004Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
#2005Fully isolated LIGBT and methods for forming the same
#2006Semiconductor device and method of fabricating the same
#2007High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#2008Semiconductor device and method for producing a semiconductor device
#2009Semiconductor device, integrated circuit and method of forming a semiconductor device
#2010Devices and methods related to radio-frequency switches having reduced-resistance metal layout
#2011Insulating gate-type bipolar transistor
#2012Silicon carbide semiconductor device and method for producing the same
#2013Semiconductor device with an integrated heat sink array
#2014Semiconductor device with heat sinks
#2015Power semiconductor device having reduced gate-collector capacitance
#2016Semiconductor device and method of fabricating the same
#2017Semiconductor device and method for manufacturing same
#2018Semiconductor Device
#2019Superjunction device and semiconductor structure comprising the same
#2020Semiconductor device
#2021Silicon carbide semiconductor device and method for producing the same
#2022Method of operating a reverse conducting IGBT
#2023DENSELY PACKED STANDARD CELLS FOR INTEGRATED CIRCUIT PRODUCTS, AND METHODS OF MAKING SAME
#2024Semiconductor device with improved short circuit capability
#2025Semiconductor device
#2026Semiconductor device
#2027Silicon carbide semiconductor device and fabrication method thereof
#2028Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer
#2029POWER SEMICONDUCTOR DEVICE
#2030Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#2031Semiconductor device
#2032Semiconductor device and method for forming a semiconductor device
#2033Layout configurations for integrating schottky contacts into a power transistor device
#2034Semiconductor device including a power transistor device and bypass diode
#2035High voltage MOSFET devices and methods of making the devices
#2036Double diffused metal oxide semiconductor device and manufacturing method thereof
#2037Vertical high-voltage semiconductor device and fabrication method thereof
#2038Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
#2039Method of making an insulated gate bipolar transistor structure
#2040Method for manufacturing silicon carbide semiconductor device
#2041Superjunction structures for power devices and methods of manufacture
#2042Monolithic bidirectional silicon carbide switching devices
#2043Process method and structure for high voltage MOSFETS
#2044Semiconductor device
#2045Semiconductor device including a MOSFET
#2046Inhomogeneous power semiconductor devices
#2047Semiconductor device
#2048Semiconductor device with SiC base layer
#2049Semiconductor device and method for manufacturing semiconductor device
#2050Semiconductor chip with integrated series resistances
#2051Semiconductor device having switching element and free wheel diode and method for controlling the same
#2052Semiconductor device, and method for manufacturing semiconductor device
#2053Power transistor
#2054Field device and method of operating high voltage semiconductor device applied with the same
#2055Semiconductor component having a transition region
#2056Semiconductor device
#2057Semiconductor device, method of manufacturing the semiconductor device, and electronic device
#2058Charge compensation semiconductor devices
#2059Electronic circuit with a reverse-conducting IGBT and gate driver circuit
#2060Semiconductor device
#2061IGBT with emitter electrode electrically connected with an impurity zone
#2062Method of fabricating semiconductor device
#2063Semiconductor component arrangement comprising a trench transistor
#2064Semiconductor component
#2065Wide band gap semiconductor device
#2066Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture
#2067Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
#2068Semiconductor device and method for producing the same
#2069Semiconductor device
#2070Power semiconductor device with contiguous gate trenches and offset source trenches
#2071Semiconductor device and semiconductor device fabrication method
#2072Semiconductor system for a current sensor in a power semiconductor
#2073High voltage semiconductor devices and methods of making the devices
#2074Semiconductor device
#2075Method for producing a semiconductor component
#2076Field effect transistor, termination structure and associated method for manufacturing
#2077Field-effect transistor
#2078Semiconductor structure and method for forming the same
#2079Termination design for nanotube MOSFET
#2080Trench transistor having a doped semiconductor region
#2081Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
#2082High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#2083Semiconductor device
#2084Power semiconductor device with resistance control structure
#2085Lateral power semiconductor device and method for manufacturing a lateral power semiconductor device
#2086Semiconductor device
#2087Semiconductor device manufacturing method
#2088Semiconductor device
#2089Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
#2090Semiconductor device
#2091Method of manufacturing a semiconductor device including an edge area
#2092Power superjunction MOSFET device with resurf regions
#2093Semiconductor device
#2094Semiconductor device
#2095Silicon carbide semiconductor device
#2096Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
#2097Semiconductor device
#2098Power device chip and method of manufacturing the power device chip
#2099Insulated gate bipolar transistor including emitter short regions
#2100METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE