208261 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes; Substrate region of field-effect devices of field-effect transistors
Sub-classes:DEVICES RELATED TO SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
#2SEMICONDUCTOR POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
#3METHOD FOR FORMING A TIMING CIRCUIT ARRANGEMENTS FOR FLIP-FLOPS
#4SEMICONDUCTOR DEVICE
#5SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
#6GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME
#7ISOLATION STRUCTURE FOR ACTIVE DEVICES
#8Methods related to switch body connections to achieve soft breakdown
#9Semiconductor device having a plurality of III-V semiconductor layers
#10SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES
#11High electron mobility transistor
#12Semiconductor device incorporating a substrate recess
#13Semiconductor device and method for manufacturing the same
#14Method for forming a timing circuit arrangements for flip-flops
#15Semiconductor device and method for manufacturing the same
#16Breakdown Resistant HEMT Substrate and Device
#17Method for fabricating semiconductor structure including the substrate structure
#18Compound semiconductor device, compound semiconductor substrate, and method for manufacturing compound semiconductor device
#19Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device
#20SEMICONDUCTOR STRUCTURE HAVING A GROUP III-V SEMICONDUCTOR LAYER COMPRISING A HEXAGONAL MESH CRYSTALLINE STRUCTURE
#21Switch body connections to achieve soft breakdown
#22SEMICONDUCTOR WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR
#23GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH GATE CONNECTED BURIED P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME
#24Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
#25Substrate structure and method for fabricating semiconductor structure including the substrate structure
#26Isolation structure for active devices
#27Semiconductor device
#28Semiconductor Device and Method for Fabricating a Wafer
#29Semiconductor device
#30Semiconductor device
#31Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
#32III-nitride devices including a graded depleting layer
#33Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#34Isolation structure for active devices
#35SWITCH BODY CONNECTIONS TO ACHIEVE SOFT BREAKDOWN
#36Power semiconductor devices
#37Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the Same
#38Electronic device with a gate insulating film and a cap layer of silicon nitride having crystallinity
#39Semiconductor structures and method for fabricating the same
#40Semiconductor devices with back surface isolation
#41Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
#42Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#43Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication therefor
#44III-nitride devices including a graded depleting layer
#45Superjunction transistor arrangement and method of producing thereof
#46Semiconductor device
#47Layer structure for a group-III-nitride normally-off transistor
#48Semiconductor substrate and manufacturing method thereof
#49Semiconductor base having a composition graded buffer layer stack
#50MUTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
#51High power compound semiconductor field effect transistor devices with low doped drain
#52Semiconductor structure and method of manufacturing the same
#53Enhancement-mode/depletion-mode field-effect transistor GAN technology
#54Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#55P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#56Bonded substrate for epitaxial growth and method of forming the same
#57Semiconductor device
#58TRANSISTOR
#59SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING
#60Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
#61III-nitride devices including a graded depleting layer
#62Semiconductor device having high linearity-transconductance
#63Power device for high voltage and high current switching
#64HEMT transistor
#65Layer structure for a group-III-nitride normally-off transistor
#66Semiconductor structure having a group iii-v semiconductor layer comprising a hexagonal mesh crystalline structure
#67Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#68Semiconductor device
#69P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#70High-electron-mobility transistor having a buried field plate
#71Semiconductor device
#72Semiconductor device, fabrication method for semiconductor device, power supply apparatus and high-frequency amplifier
#73Gallium nitride nanowire based electronics
#74Double heterojunction field effect transistor with polarization compensated layer
#75Process for forming a high electron mobility transistor
#76III-nitride based semiconductor device with low vulnerability to dispersion and backgating effects
#77Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
#78Semiconductor component and method of manufacture
#79Semiconductor device
#80P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#81Plasma protection diode for a HEMT device
#82Semiconductor device
#83Breakdown resistant HEMT substrate and device
#84Fabrication methodology for optoelectronic integrated circuits
#85Method for processing a carrier and an electronic component
#86Nitride semiconductor device, production method thereof, diode, and field effect transistor
#87Control of current collapse in thin patterned GaN
#88Semiconductor device
#89High electron mobility transistor
#90Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same
#91Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor device
#92High electron mobility transistor with periodically carbon doped gallium nitride
#93High-electron-mobility transistor having a buried field plate
#94Power semiconductor devices
#95Semiconductor component and method of manufacture
#96Buffer layer structures suited for III-nitride devices with foreign substrates
#97Plasma protection diode for a HEMT device
#98Nitride semiconductor layer, nitride semiconductor device, and method for manufacturing nitride semiconductor layer
#99Compound semiconductor device and method of manufacturing the same
#100Semiconductor device
#101Group III-V HEMT having a selectably floating substrate
#102Composite group III-V and group IV transistor having a switched substrate
#103High-quality GaN high-voltage HFETs on silicon
#104Layer structure for a group-III-nitride normally-off transistor
#105Semiconductor device and method of manufacturing the semiconductor device
#106Method of manufacturing a semiconductor device
#107Method of manufacturing a stress-controlled HEMT
#108Inverted III-nitride P-channel field effect transistor with hole carriers in the channel
#109Semiconductor device
#110Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#111Semiconductor multi-layer substrate and semiconductor element
#112Superjunction structures for power devices
#113Semiconductor device
#114Semiconductor device
#115Semiconductor device with low-conducting buried and/or surface layers
#116Semiconductor power device
#117III-N device structures and methods
#118Semiconductor devices and methods of manufacturing the same
#119Gallium nitride nanowire based electronics
#120Nitride semiconductor element, nitride semiconductor wafer, and method for forming nitride semiconductor layer
#121Method for processing a carrier and an electronic component
#122High quality GaN high-voltage HFETs on silicon
#123High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode
#124Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
#125Nitride semiconductor substrate
#126High electron mobility transistor and method of forming the same
#127Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the same
#128High temperature GaN based super semiconductor and fabrication process
#129Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material
#130III-nitride P-channel field effect transistor with hole carriers in the channel
#131Methods for manufacturing and manipulating semiconductor structure having active device
#132Composite wafer for bonding and encapsulating an SiC-based functional layer
#133Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
#134Field effect transistor
#135Gallium nitride power devices
#136RF power HEMT grown on a silicon or SiC substrate with a front-side plug connection
#137Nitride semiconductor element with selectively provided conductive layer under control electrode
#138III-N device structures and methods
#139Semiconductor apparatus
#140Solid state cloaking for electrical charge carrier mobility control
#141Semiconductor structure having an active device and method for manufacturing and manipulating the same
#142Nitride semiconductor wafer for a high-electron-mobility transistor and its use
#143Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#144Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#145Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier
#146Stress-controlled HEMT
#147Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrate
#148Semiconductor devices and methods of manufacturing the same
#149Compound semiconductor device and method for manufacturing the same
#150Compound semiconductor device and manufacturing method thereof
#151JFET device and method of manufacturing the same
#152Plasma protection diode for a HEMT device
#153Overvoltage Protection Device for Compound Semiconductor Field Effect Transistors
#154III-N ON SILICON USING NANO STRUCTURED INTERFACE LAYER
#155Method of growing a high quality III-V compound layer on a silicon substrate
#156Buffer layer structures suited for III-nitride devices with foreign substrates
#157E-mode HFET device
#158Compound semiconductor device with buried field plate
#159High quality GaN high-voltage HFETS on silicon
#160Polarization super-junction low-loss gallium nitride semiconductor device
#161Semiconductor device with low-conducting buried and/or surface layers
#162Epitaxial growth substrate, semiconductor device, and epitaxial growth method
#163High electron mobility transistor and method of manufacturing the same
#164Semiconductor including lateral HEMT
#165SEMICONDUCTOR DEVICE
#166Nitride semiconductor device
#167SILICON CARBIDE SEMICONDUCTOR DEVICE
#168Semiconductor device and method for manufacturing semiconductor device
#169Epitaxial substrate and method for manufacturing epitaxial substrate
#170EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
#171NITRIDE-BASED SEMICONDUCTOR DEVICE HAVING EXCELLENT STABILITY
#172Semiconductor device having nitride semiconductor layer
#173Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
#174METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
#175Junction gate field effect transistor structure having n-channel
#176Semiconductor device with buffer layer for mitigating stress exerted on compound semiconductor layer
#177Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same
#178Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
#179Compound semiconductor device and method for manufacturing the same
#180Semiconductor device with low-conducting field-controlling element
#181III-N device structures and methods
#182Semiconductor element
#183Enhancement mode gallium nitride power devices
#184Semiconductor devices with back surface isolation
#185Method and apparatus for controlling a circuit with a high voltage sense device
#186Island matrixed gallium nitride microwave and power switching transistors
#187Semiconductor device
#188Epitaxial substrate for electronic device and method of producing the same
#189Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
#190NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#191FIELD-EFFECT TRANSISTOR
#192Power devices with integrated protection devices: structures and methods
#193Power devices with integrated protection devices: structures and methods
#194Epitaxial substrate for electronic device and method of producing the same
#195Compound semiconductor device and manufacturing method thereof
#196NITRIDE SEMICONDUCTOR DEVICE
#197Semiconductor device and method of fabrication
#198Enhancement mode gallium nitride power devices
#199Method and apparatus for controlling a circuit with a high voltage sense device
#200Semiconductor device
#201Semiconductor device
#202Semiconductor including lateral HEMT
#203Nitride semiconductor device having graded aluminum content
#204FIELD EFFECT TRANSISTOR
#205Buffer structure for semiconductor device and methods of fabrication
#206Method and apparatus for controlling a circuit with a high voltage sense device
#207Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
#208Semiconductor device
#209Nitride semiconductor epitaxial wafer and nitride semiconductor device
#210SEMICONDUCTOR DEVICE
#211Normally-off electronic switching device for on-off control of electric circuit
#212METHOD TO REDUCE EXCESS NOISE IN ELECTRONIC DEVICES AND MONOLITHIC INTEGRATED CIRCUITS
#213Method and apparatus for controlling a circuit with a high voltage sense device
#214Superjunction structures for power devices
#215Enhancement mode gallium nitride power devices
#216Nitride semiconductor device, Doherty amplifier and drain voltage controlled amplifier
#217NITRIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER INCLUDING THE SAME
#218Quasi single crystal nitride semiconductor layer grown over polycrystalline SiC substrate
#219Semiconductor apparatus
#220JUNCTION FIELD EFFECT TRANSISTORS IN GERMANIUM AND SILICON-GERMANIUM ALLOYS AND METHOD FOR MAKING AND USING
#221High Frequency Switch With Low Loss, Low Harmonics, And Improved Linearity Performance
#222Method for fabricating a MESFET
#223Method and apparatus for controlling a circuit with a high voltage sense device
#224Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity
#225Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#226Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#227Nitride-based semiconductor device with reduced leakage current
#228Field effect transistor including a gate electrode and an additional electrode
#229Method and apparatus for controlling a circuit with a high voltage sense device
#230Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
#231Method and apparatus for controlling a circuit with a high voltage sense device
#232Semiconductor multilayer structure, semiconductor device and HEMT device
#233Dynamic substrate biasing for extended voltage operation