208282 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group , e.g. alloys in different semiconductor regions, e.g. heterojunctions
Semiconductor devices including field effect transistors and methods of forming the same
#902Semiconductor devices and method of manufacturing the same
#903FinFETs with wrap-around silicide and method forming the same
#904Semiconductor structure and manufacturing method thereof
#905Structure and formation method of semiconductor device structure with nanowires
#906Single crystalline extrinsic bases for bipolar junction structures
#907Source/drain structure having multi-facet surfaces
#908GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING CARBON-BASED DOPANT DIFFUSION BARRIER
#909Strain compensation in transistors
#910Semiconductor structure and fabricating method thereof
#911Transistor having reduced gate-induced drain-leakage current
#912Semiconductor structure and manufacturing method thereof
#913Nanosheet device with close source drain proximity
#914Contact resistance reduction employing germanium overlayer pre-contact metalization
#915Quantum dot devices with gate interface materials
#916Methods of forming dislocation enhanced strain in NMOS structures
#917Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
#918Method of manufacturing a semiconductor device and a semiconductor device
#919Quantum well stacks for quantum dot devices
#920Self-aligned epitaxy layer
#921Method and structure for forming silicon germanium FinFET
#922Method and structure for forming silicon germanium finFET
#923Semiconductor devices and methods of manufacturing semiconductor devices
#924Semiconductor device and method of manufacture
#925Method of forming a low-k layer and method of forming a semiconductor device
#926Semiconductor device and method of manufacturing thereof
#927FinFET with multilayer fins for multi-value logic (MVL) applications
#928Methods of forming backside self-aligned vias and structures formed thereby
#929LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOUND BURIED OXIDE
#930Integrated assemblies, and methods of forming integrated assemblies
#931Multi-layer thyristor random access memory with silicon-germanium bases
#932Techniques for forming dual-strain fins for co-integrated n-MOS and p-MOS devices
#933Semiconductor device and method of fabricating the same
#934Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width
#935Gate structure of field effect transistor with footing
#936Method and structure of fabricating I-shaped silicon vertical field-effect transistors
#937Method of manufacturing a bipolar transistor with trench structure
#938Supportive layer in source/drains of FinFET devices
#939Vertically stacked nFETs and pFETs with gate-all-around structure
#940Integrated RF front end system
#941Semiconductor device
#942Integrated circuit device
#943Semiconductor device
#944Gradient doped region of recessed fin forming a FinFET device
#945Semiconductor device and manufacturing method thereof
#946Quantum dot device packages
#947FinFET device with a wrap-around silicide source/drain contact structure
#948FIELD-EFFECT TRANSISTORS WITH A COMPOSITE CHANNEL
#949Field effect transistor with controllable resistance
#950Method of fabricating semiconductor device with nanowires
#951Vertical transport field-effect transistors having germanium channel surfaces
#952Source/drain features with an etch stop layer
#953Low parasitic capacitance and resistance finFET device
#954Semiconductor device and method of manufacturing a semiconductor device
#955Structure and formation method of semiconductor device structure
#956High selectivity nitride removal process based on selective polymer deposition
#957Integrated circuit devices and methods of manufacturing the same
#958FinFET based ZRAM with convex channel region
#959Co-integration of tensile silicon and compressive silicon germanium
#960Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
#961Semiconductor device and method for fabricating the same
#962Source and drain isolation for CMOS nanosheet with one block mask
#963Semiconductor device
#964Method for FinFET LDD doping
#965Semiconductor devices
#966Method of fabricating semiconductor device
#967IC unit and method of manufacturing the same, and electronic device including the same
#968Tensile strain in NFET channel
#969Contact structure for FinFET semiconductor device
#970Substrate resistor and method of making same
#971Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#972Integrated circuit device including asymmetrical fin field-effect transistor
#973TRANSISTOR SOURCE/DRAIN AMORPHOUS INTERLAYER ARRANGEMENTS
#974Field-Effect Transistors (FETs)
#975Vertical FET process with controlled gate length and self-aligned junctions
#976Methods and systems for reducing dislocation defects in high concentration epitaxy processes
#977Semiconductor device
#978Semiconductor device having interfacial layer and high K dielectric layer
#979Method for forming semiconductor structure
#980Reliable gate contacts over active areas
#981Semiconductor device and method
#982Metal gate scheme for device and methods of forming
#983Quantum dot devices with trenched substrates
#984Wrap around contact
#985Semiconductor devices including protruding insulation portions between active fins
#986Selective germanium P-contact metalization through trench
#987Semiconductor device and manufacturing method thereof
#988Techniques providing metal gate devices with multiple barrier layers
#989Semiconductor device
#990Cascode heterojunction bipolar transistor
#991Semiconductor device and method
#992Conformal transfer doping method for fin-like field effect transistor
#993FinFET device and method of forming same
#994Forming nanosheet transistor using sacrificial spacer and inner spacers
#995N-work function metal with crystal structure
#996Semiconductor memory devices
#997Field effect transistor contact with reduced contact resistance
#998Wrap-around contact on FinFET
#999FETS and methods of forming FETS
#1000Transistors comprising a pair of source/drain regions having a channel there-between
#1001Metal-insensitive epitaxy formation
#1002Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
#1003Fin field effect transistors having conformal oxide layers and methods of forming same
#1004Semiconductor liner of semiconductor device
#1005Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
#1006Manufacturing method for semiconductor laminated film, and semiconductor laminated film
#1007FinFETs with source/drain cladding
#1008Semiconductor structures having increased channel strain using fin release in gate regions
#1009Method for FinFET LDD doping
#1010Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
#1011Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy
#1012Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance
#1013Semiconductor device and method of manufacturing same
#1014Quantum dot array devices
#1015Quantum dot array devices
#1016Nanowire field effect transistor device having a replacement gate
#1017Semiconductor device including a multilayer etch stop layer
#1018FinFET devices and methods of forming the same
#1019Variable capacitor flat-band voltage engineering
#1020Nanowire transistors employing carbon-based layers
#1021Contact formation in semiconductor devices
#1022Strained silicon layer with relaxed underlayer
#1023Method of fabricating tunneling transistor
#1024Method of manufacturing semiconductor device having stressor
#1025Source and drain isolation for CMOS nanosheet with one block mask
#1026Method of forming a device having a doping layer and device formed
#1027Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
#1028Method of manufacturing at least one field effect transistor having epitaxially grown electrodes
#1029Semiconductor device with fin-type patterns
#1030Co-integration of elastic and plastic relaxation on the same wafer
#1031Method and structure for forming silicon germanium FinFET
#1032Quantum dot devices
#1033Quantum dot array devices
#1034Steep slope field-effect transistor (FET) for a perpendicular magnetic tunnel junction (PMTJ)
#1035FinFET including tunable fin height and tunable fin width ratio
#1036SEMICONDUCTOR DEVICE
#1037Method of fabricating semiconductor devices with same conductive type but different threshold voltages
#1038Flat STI surface for gate oxide uniformity in Fin FET devices
#1039Tensile strain in NFET channel
#1040Germanium condensation for replacement metal gate devices with silicon germanium channel
#1041Structure of a fin field effect transistor (FinFET)
#1042METHOD OF FABRICATION OF A SEMICONDUCTOR DEVICE INCLUDING ONE OR MORE NANOSTRUCTURES
#1043Semiconductor device and method of fabricating the same
#1044Semiconductor device with fin and related methods
#1045Lateral fin static induction transistor
#1046Systems, methods and devices for isolation for subfin leakage
#1047Semiconductor device and method for fabricating the same
#1048Method of forming semiconductor structure
#1049Semiconductor arrangement having continuous spacers and method of manufacturing the same
#1050Surface treatment of substrates using passivation layers
#1051Transistors incorporating metal quantum dots into doped source and drain regions
#1052Semiconductor device and method for manufacturing the same
#1053Qubit-detector die assemblies
#1054DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
#1055Semiconductor device
#1056Method of making a FinFET, and FinFET formed by the method
#1057Sensing device for sensing minor charge variations
#1058Semiconductor apparatus
#1059Semiconductor device having a SiGe epitaxial layer containing Ga
#1060Gate structure and method with enhanced gate contact and threshold voltage
#1061Epitaxial source or drain structures for advanced integrated circuit structure fabrication
#1062Gate patterning for quantum dot devices
#1063Gate line plug structures for advanced integrated circuit structure fabrication
#1064Replacement gate structures for advanced integrated circuit structure fabrication
#1065Semiconductor device having boron-doped germanium tin epitaxy structure and method for forming the same
#1066Method for semiconductor device fabrication with improved epitaxial source/drain proximity control
#1067Vertical fin bipolar junction transistor with high germanium content silicon germanium base
#1068Method for forming source/drain contacts
#1069Gate etch back with reduced loading effect
#1070Semiconductor device and manufacturing method thereof
#1071High surface dopant concentration formation processes and structures formed thereby
#1072Semiconductor component and fabricating method thereof
#1073Dual metal gate structures for advanced integrated circuit structure fabrication
#1074Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
#1075Method for manufacturing a FinFET device
#1076FinFET with etch-selective spacer and self-aligned contact capping layer
#1077Heterogeneous metal line compositions for advanced integrated circuit structure fabrication
#1078Semiconductor device and method for manufacturing the same
#1079SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#1080Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
#1081Semiconductor device and method of manufacture
#1082Liner structure in interlayer dielectric structure for semiconductor devices
#1083Etch-stop layer topography for advanced integrated circuit structure fabrication
#1084Plugs for interconnect lines for advanced integrated circuit structure fabrication
#1085Trench isolation for advanced integrated circuit structure fabrication
#1086Contact over active gate structures for advanced integrated circuit structure fabrication
#1087Formation of FinFET junction
#1088FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
#1089Structure and formation method of semiconductor device with low resistance contact
#1090Method for fabricating semiconductor device with strained silicon structure
#1091Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts
#1092Semiconductor device having silicides and methods of manufacturing the same
#1093Method for forming a semiconductor device and a semiconductor device
#1094Quantum dot devices
#1095Nanosheet MOSFET with gate fill utilizing replacement spacer
#1096Gate fill utilizing replacement spacer
#1097Method for forming source/drain contacts
#1098Laser anneal process
#1099Single process for linear and metal fill
#1100Synaptic semiconductor device and neural networks using the same
#1101FETs and methods for forming the same
#1102Formation method of semiconductor device with source/drain structures
#1103Method of forming source/drain epitaxial stacks
#1104Precise junction placement in vertical semiconductor devices using etch stop layers
#1105Semiconductor device structure with barrier layer and method for forming the same
#1106Integrated circuit device fins
#1107Semiconductor device and method of manufacturing the same
#1108Method of forming source/drain structure with first and second epitaxial layers
#1109Semiconductor device including metal-2 dimensional material-semiconductor contact
#1110Epitaxial region for embedded source/drain region having uniform thickness
#1111Strain compensation in transistors
#1112Semiconductor device having contact plugs
#1113Integrated circuit device and method of manufacturing same
#1114FinFET devices and methods of forming
#1115Semiconductor structure and method for manufacturing the same
#1116MOSFETs with channels on nothing and methods for forming the same
#1117Method of forming semiconductor device using titanium-containing layer and device formed
#1118Charge pump circuit with low reverse current and low peak current
#1119Source/drain junction formation
#1120FinFET with a semiconductor strip as a base
#1121Quantum dot devices with patterned gates
#1122Semiconductor device, related manufacturing method, and related electronic device
#1123Semiconductor device structure with gate spacer having protruding bottom portion and method for forming the same
#1124Source/drain features with an etch stop layer
#1125Semiconductor structure including isolations and method for manufacturing the same
#1126Semiconductor devices and methods of fabricating the same
#1127Forming a fin cut in a hardmask
#1128Tunneling field effect transistor and method for fabricating the same
#1129Field effect transistor and method of forming the same
#1130Approach to high-k dielectric feature uniformity
#1131Dual-curvature cavity for epitaxial semiconductor growth
#1132Single-curvature cavity for semiconductor epitaxy
#1133Method of manufacturing a semiconductor device and a semiconductor device
#1134Semiconductor device structure with salicide layer and method for forming the same
#1135Semiconductor structure and manufacturing method of the same
#1136Vertically stacked NFETS and PFETS with gate-all-around structure
#1137Semiconductor device and manufacturing method of a semiconductor device
#1138Method for fabricating semiconductor device
#1139Methods for forming a semiconductor structure and related semiconductor structures
#1140Semiconductor structure with etched fin structure
#1141Fin field effect transistor (FinFET) device and method for forming the same
#1142Semiconductor device and manufacturing method thereof
#1143Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy
#1144Semiconductor device including an epitaxy region
#1145Integrated circuit structure with substrate isolation and un-doped channel
#1146Method and structure for FinFET device
#1147Conductive structure and method for manufacturing conductive structure
#1148Contact hole structure and method of fabricating the same
#1149Vertical tunnel FET with self-aligned heterojunction
#1150Fin field effect transistor (FinFET) device and method for forming the same
#1151High mobility strained channels for fin-based NMOS transistors
#1152Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits
#1153FinFET device having a channel defined in a diamond-like shape semiconductor structure
#1154Semiconductor structure with barrier layers
#1155Methods of manufacturing gate-all-around (GAA) FETs through partial replacement of gate spacers
#1156Semiconductor device with cap element
#1157Formation of dislocations in source and drain regions of finFET devices
#1158Fin-based device having an isolation gate comprising a conformal dielectric layer and a metal gate
#1159Source/drain regions in fin field effect transistors (finFETs) and methods of forming same
#1160Method of forming source/drain contact
#1161Low-resistance contact plugs and method forming the same
#1162Techniques for integration of Ge-rich p-MOS source/drain
#1163Semiconductor structure having a source/drain stressor including a plurality of silicon-containing layers
#1164Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
#1165Integrated circuit devices and methods of fabricating such devices
#1166Hybrid scheme for improved performance for P-type and N-type FinFETs
#1167High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications
#1168High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applications
#1169Semiconductor device structure
#1170Selective film growth for bottom-up gap filling
#1171METHOD FOR FABRICATING SEMICONDUCTOR DEVICE INVOLVING FORMING EPITAXIAL MATERIAL
#1172Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current
#1173Spacer structure with high plasma resistance for semiconductor devices
#1174Gate stacks for stack-fin channel I/O devices and nanowire channel core devices
#1175Method of manufacturing a semiconductor device and a semiconductor device
#1176Mechanism for manufacturing semiconductor device
#1177Semiconductor structure and method for forming the same
#1178Method of removing an etch mask
#1179Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
#1180Method of manufacturing a semiconductor device
#1181Semiconductor structure and fabrication method thereof
#1182Semiconductor structure with blocking layer and method for forming the same
#1183Semiconductor devices and methods of manufacturing the same
#1184Semiconductor diodes employing back-side semiconductor or metal
#1185IC including standard cells and SRAM cells
#1186Semiconductor device and manufacturing method thereof
#1187Integrated resistor for semiconductor device
#1188Semiconductor device layout
#1189Semiconductor device and method for manufacturing the same
#1190Thin film transistor and method of fabricating the same, array substrate and display device
#1191Multi-gate device and method of fabrication thereof
#1192Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage
#1193Semiconductor devices, FinFET devices with optimized strained source-drain recess profiles and methods of forming the same
#1194Vertical field effect transistor and semiconductor device including the same
#1195Method for Forming a Vertical Channel Device, and a Vertical Channel Device
#1196Method of manufacturing a semiconductor device having graphene material
#1197MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
#1198Semiconductor structure and fabrication method thereof
#1199Semiconductor device including a shared semiconductor pattern having faceted sidewalls and method for fabricating the same
#1200Semiconductor device and manufacturing method thereof