208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Process of forming an electronic device including an access region
#902Nitride semiconductor device
#903CMOS compatible isolation leakage improvements in gallium nitride transistors
#904GALLIUM-NITRIDE-BASED TRANSCAPS FOR MILLIMETER WAVE APPLICATIONS
#905Asymmetrical blocking bidirectional gallium nitride switch
#906Semiconductor element and method for manufacturing the same
#907Structure for increasing mobility in a high electron mobility transistor
#908Semiconductor device
#909Semiconductor device combining passive components with HEMT
#910High-voltage GaN high electron mobility transistors with reduced leakage current
#911Integrated semiconductor devices and method of fabricating the same
#912Wide dynamic range auto-AGC transimpedance amplifier
#913High electron mobility transistor with reverse arrangement of channel layer and barrier layer
#914GaN stack acoustic reflector and method for producing the same
#915Semiconductor device
#916Gallium nitride transistor with improved termination structure
#917Transistor structure with depletion-mode and enhancement mode-devices
#918SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#919Electronic power devices integrated with an engineered substrate
#920Semiconductor element, semiconductor device, and method for manufacturing same
#921High-electron-mobility transistor with buried interconnect
#922Direct growth of lateral III-V bipolar transistor on silicon substrate
#923Field effect transistor with controllable resistance
#924Electronic device including an enhancement-mode HEMT and a method of using the same
#925SEMICONDUCTOR STRUCTURE
#926Low collector contact resistance heterojunction bipolar transistors
#927Method for fabricating high-quality and high-uniformity III-nitride epi structure
#928Semiconductor device and power amplifier module
#929Nitride semiconductor device
#930Transistor and Method for Manufacturing the Same
#931Nitride semiconductor device
#932Semiconductor device and method of manufacturing semiconductor device
#933Nitride-based electronic device and method for manufacturing same
#934Gallium nitride transistor
#935Double-channel HEMT device and manufacturing method thereof
#936Semiconductor structures and method for fabricating the same
#937Semiconductor device
#938IC unit and method of manufacturing the same, and electronic device including the same
#939Semiconductor structure and method for manufacturing thereof
#940Semiconductor device, method for manufacturing the same, power circuit, and computer
#941Semiconductor device, semiconductor device manufacturing method, power supply circuit, and computer
#942High electron mobility transistor with deep charge carrier gas contact structure
#943Semiconductor devices and methods for fabricating the same
#944SEMICONDUCTOR WAFER
#945Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#946Compound semiconductor substrate comprising a SiC layer
#947Compound semiconductor device
#948Semiconductor device
#949Nitride semiconductor device and nitride semiconductor package
#950Power semiconductor device with an auxiliary gate structure
#951Field-Effect Transistors (FETs)
#952Semiconductor device
#953Method for manufacturing an integrated enhancement/depletion mode HEMT
#954Semiconductor device, power circuit, and computer
#955Power semiconductor device with optimized field-plate design
#956Semiconductor devices with multiple channels and three-dimensional electrodes
#957Group III-V compound semiconductor device
#958Method for forming semiconductor structure
#959Vertically stacked multichannel pyramid transistor
#960High electron mobility transistor including a gate electrode layer spaced apart from a silicon nitride film
#961Semiconductor structures and methods with high mobility and high energy bandgap materials
#962Highly scaled linear GaN HEMT Structures
#963FinFET device and method of forming same
#964High electron mobility transistor
#965High electron mobility transistor devices and method for fabricating the same
#966Method and system for forming doped regions by diffusion gallium nitride materials
#967HETEROJUNCTION BIPOLAR TRANSISTOR POWER AMPLIFIER WITH BACKSIDE THERMAL HEATSINK
#968Bipolar transistor and method for producing the same
#969Nitride semiconductor device
#970Semiconductor device comprising a three-dimensional field plate
#971GALLIUM NITRIDE MATERIALS AND METHODS
#972Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
#973Nanowire field effect transistor device having a replacement gate
#974Dual-gate PMOS field effect transistor with InGaAs channel
#975CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
#976Gate stack design for GaN e-mode transistor performance
#977Buffer layer structure to improve GaN semiconductors
#978Semiconductor device and method for manufacturing the same
#979Compound semiconductor device and fabrication method
#980Gallium nitride materials and methods
#981Semiconductor structure and method of preparing semiconductor structure
#982High power transistors
#983Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate
#984Semiconductor device and manufacturing method thereof
#985Semiconductor device and method for forming the same
#986Methods of fabricating semiconductor structures and high electron mobility transistors
#987InN tunnel junction contacts for P-channel GaN
#988Semiconductor devices with regrown contacts and methods of fabrication
#989Testing solid state devices before completing manufacture
#990SEMICONDUCTOR DEVICE
#991Semiconductor device and method for forming the same
#992High-electron-mobility transistor devices
#993Stacked III-V semiconductor component
#994Field effect transistor with controllable resistance
#995III-nitride devices including a graded depleting layer
#996Semiconductor device with two-part insulation structure within non-active region
#997Microelectronic sensors for non-invasive monitoring of physiological parameters
#998Semiconductor device having a bidirectional switch and a passive electrical network
#999Indium-rich NMOS transistor channels
#1000Schottky diodes on semipolar planes of group III-N material structures
#1001SEMICONDUCTOR DEVICE
#1002Semiconductor device, power supply circuit, and computer
#1003Semiconductor device and fabrication method therefor, and high-frequency amplifier
#1004PN diodes and connected group III-N devices and their methods of fabrication
#1005THERMAL SHUNTS AND THERMAL MANAGEMENT IN MONOLITHIC MICROWAVE INTEGRATED CIRCUITS
#1006Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers
#1007Group III-N material conductive shield for high frequency metal interconnects
#1008Semiconductor device
#1009Semiconductor apparatus
#1010Semiconductor element
#1011FET transistor on a III-V material structure with substrate transfer
#1012Semiconductor device and manufacturing method thereof
#1013Lateral bipolar junction transistor with dual base region
#1014Semiconductor device and manufacturing method thereof
#1015Process of forming nitride semiconductor device
#1016Device isolation using preferential oxidation of the bulk substrate
#1017Group III-N nanowire transistors
#1018Bipolar transistor, semiconductor device, and bipolar transistor manufacturing method
#1019Power amplifier modules including transistor with grading and semiconductor resistor
#1020Semiconductor device with selectively etched surface passivation
#1021III-V lateral bipolar junction transistor on local facetted buried oxide layer
#1022Diamond air bridge for thermal management of high power devices
#1023Recessed solid state apparatuses
#1024Nitride semiconductor structure
#1025Precise junction placement in vertical semiconductor devices using etch stop layers
#1026Semiconductor devices with raised doped crystalline structures
#1027High-mobility semiconductor source/drain spacer
#1028Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions
#1029MOSFETs with channels on nothing and methods for forming the same
#1030High-voltage aluminum nitride (AIN) schottky-barrier diodes
#1031Microwave transistor with a patterned gate structure and manufacturing method thereof
#1032Group III nitride semiconductor device with first and second conductive layers
#1033Asymmetrical plug technique for GaN devices
#1034Pnictide buffer structures and devices for GaN base applications
#1035High hole mobility transistor
#1036High electron mobility transistor structure
#1037Heterojunction semiconductor device for reducing parasitic capacitance
#1038Semiconductor device including switching device having four-terminal structure
#1039Transistor having low capacitance field plate structure
#1040DEVICES RELATED TO BARRIER FOR METALLIZATION OF GALLIUM BASED SEMICONDUCTOR
#1041Methods of forming a vertical semiconductor diode using an engineered substrate
#1042High electron mobility transistor with tunable threshold voltage
#1043Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer
#1044Heterojunction bipolar transistor
#1045Gate stack for heterostructure device
#1046Transistor with multi-metal gate
#1047High electron mobility transistor (HEMT)
#1048Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#1049Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method thereof
#1050Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#1051High electron mobility transistor devices and method for fabricating the same
#1052High power device
#1053Layer structure for a group-III-nitride normally-off transistor
#1054Semiconductor diodes employing back-side semiconductor or metal
#1055Ultra-thin-body GaN on insulator device
#1056SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1057Integrated resistor for semiconductor device
#1058Bypassed gate transistors having improved stability
#1059Semiconductor device and method for manufacturing the same
#1060Bipolar transistor and radio-frequency power amplifier module
#1061Selective epitaxially grown III-V materials based devices
#1062High current lateral GaN transistors with scalable topology and gate drive phase equalization
#1063NITRIDE SEMICONDUCTOR DEVICE
#1064GATE-ALL-AROUND DEVICE AND METHOD FOR FABRICATING THE SAME
#1065Scalable circuit-under-pad device topologies for lateral GaN power transistors
#1066Method of forming compound semiconductor body
#1067Microelectronic sensor for intestinal and gut diagnostics and gut motility monitoring
#1068Nitride semiconductor epitaxial substrate
#1069Gallium nitride transistors for high-voltage radio frequency switches
#1070InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer
#1071Microelectronic sensor for use in hypersensitive microphones
#1072Bidirectional switch with passive electrical network for substrate potential stabilization
#1073Digital alloy based back barrier for P-channel nitride transistors
#1074Semiconductor device having a collector layer including first-conductivity-type semiconductor layers
#1075FinFET device and method of forming same
#1076Semiconductor device and method of manufacturing semiconductor device
#1077Logic gate cell structure
#1078Gallium nitride voltage regulator
#1079III-nitride high electron mobility transistor
#1080Thin film transistor substrate, and display panel and display device including same
#1081Silicon PMOS with gallium nitride NMOS for voltage regulation
#1082Semiconductor device and manufacturing method of the same
#1083Semiconductor substrate and manufacturing method thereof
#1084Semiconductor base having a composition graded buffer layer stack
#1085Semiconductor device and method for manufacturing the same
#1086Compound semiconductor device with quantum well structure, power supply device, and high-frequency amplifier
#1087Semiconductor device with first and second transistors and support part
#1088Reconfigurable logic device using electrochemical potential
#1089Etching fin core to provide fin doubling
#1090High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
#1091Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method
#1092Dopant diffusion barrier for source/drain to curb dopant atom diffusion
#1093Protective insulator for HFET devices
#1094Nitride semiconductor device
#1095Semiconductor structure having sets of III-V compound layers and method of forming
#1096EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS
#1097Microelectronic sensor for air quality monitoring
#1098Pseudo-conductive high-electron mobility transistors and microelectronic sensors based on them
#1099High electron mobility transistors
#1100High power compound semiconductor field effect transistor devices with low doped drain
#1101Heterojunction semiconductor device for reducing parasitic capacitance
#1102Transistor structure including a scandium gallium nitride back-barrier layer
#1103Semiconductor device and method of forming the same
#1104Epitaxies of a chemical compound semiconductor
#1105Crystal analysis apparatus and crystal analysis method
#1106HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
#1107Semiconductor structure and manufacturing method thereof
#1108High electron mobility transistors and methods for fabricating the same
#1109Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
#1110Semiconductor device having group III-V material active region and graded gate dielectric
#1111Semiconductor wafer
#1112Thin film transistor substrate, and display panel and display device including same
#1113Heterojunction diode having an increased non-repetitive surge current
#1114Nitride semiconductor epitaxial substrate and semiconductor device
#1115Semiconductor device
#1116Semiconductor device and method for manufacturing the same
#1117Heterostructure and method of its production
#1118Enhancement-mode/depletion-mode field-effect transistor GAN technology
#1119METHOD FOR PRODUCING COMPLIMENTARY DEVICES
#1120Transistors with heteroepitaxial III-N source/drain
#1121Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#1122Device isolation for III-V substrates
#1123High mobility field effect transistors with a band-offset semiconductor source/drain spacer
#1124Envelope-tracking control techniques for highly-efficient RF power amplifiers
#1125Structure of GaN-based transistor and method of fabricating the same
#1126Semiconductor device and manufacturing method thereof
#1127SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1128Transistor with a sub-fin dielectric region under a gate
#1129NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
#1130Wide band gap transistors on non-native semiconductor substrates
#1131Stressors for compressively strained GaN p-channel
#1132Heterojunction bipolar transistor
#1133P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#1134Gallium nitride device for high frequency and high power applications
#1135Integrated RF frontend structures
#1136Group IIIA-N HEMT with a tunnel diode in the gate stack
#1137HEMT transistors with improved electron mobility
#1138Nitride semiconductor device
#1139Semiconductor heterostructures and methods for forming same
#1140Differential work function between gate stack metals to reduce parasitic capacitance
#1141Thermally stable ammonia gas sensor using ZnO-functionalized AlGaN/GaN heterostructure transistor
#1142Semiconductor device and power amplifier module
#1143Semiconductor device and manufacturing method of semiconductor device
#1144FIELD-EFFECT TRANSISTOR WITH OPTIMISED PERFORMANCE AND GAIN
#1145Semiconductor device and method of manufacturing the same
#1146Sidewall passivation for HEMT devices
#1147Method for forming ohmic contacts
#1148SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER
#1149Semiconductor device
#1150Integrated gallium nitride power amplifier and switch
#1151Deep gate-all-around semiconductor device having germanium or group III-V active layer
#1152Field effect transistor having a Fermi filter between a source and source contact thereof
#1153HIGH ELECTRON MOBILITY TRANSISTOR
#1154DEVICES, SYSTEMS, AND METHODS FOR THE DETECTION OF ANALYTES
#1155Tunnel field effect trasnsistor
#1156Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#1157HIGH FREQUENCY DEVICE
#1158Semiconductor device and method of manufacturing semiconductor device
#1159Method for manufacturing semiconductor device
#1160Production method for semiconductor
#1161Process of depositing silicon nitride (SiN) film on nitride semiconductor
#1162SEMICONDUCTOR DEVICE
#1163High electron mobility transistor
#1164Nucleation layer for growth of III-nitride structures
#1165Normally off III nitride transistor
#1166Compound semiconductor substrate with SiC layer
#1167Process of forming epitaxial wafer
#1168Device for guiding charge carriers and use thereof
#1169Patterned layer design for group III nitride layer growth
#1170High voltage blocking III-V semiconductor device
#1171Semiconductor device and power amplifier circuit
#1172High mobility field effect transistors with a retrograded semiconductor source/drain
#1173Semiconductor device and electrical device
#1174(Sc,Y):AIN SINGLE CRYSTALS FOR LATTICE-MATCHED AIGaN SYSTEMS
#1175III-V heterojunction field effect transistor
#1176Metal Oxide Thin Film Semiconductor Device Monolithically Integrated With Dissimilar Device on the Same Wafer
#1177Schottky diode and method of manufacturing the same
#1178Water-insensitive gas sensor using polymer-encapsulated Pt—AlGaN/GaN diodes
#1179Charge carrier transport facilitated by strain
#1180Semiconductor device
#1181Bipolar transistor and method for producing the same
#1182HEMT-compatible lateral rectifier structure
#1183Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#1184Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#1185Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#1186Metal-semiconductor-metal two-dimensional electron gas varactor and method of manufacturing the same
#11873D low flux, high-powered MMIC amplifiers
#1188Nitride semiconductor substrate and method for manufacturing the same
#1189Heterojunction bipolar transistor
#1190Method of forming a semiconductor device
#1191Self-healing semiconductor transistors
#1192Nitride semiconductor device
#1193FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR
#1194Semiconductor device
#1195High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof
#1196Semiconductor device with low band-to-band tunneling
#1197Low damage self-aligned amphoteric FINFET tip doping
#1198Semiconductor device and manufacturing method of semiconductor device
#1199GaN lateral vertical HJFET with source-P block contact
#1200Semiconductor device