208290 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AB compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
III-N based substrate for power electronic devices and method for manufacturing same
#1202Semiconductor device having specified p-type dopant concentration profile
#1203Heterojunction bipolar transistor power amplifier with backside thermal heatsink
#1204Gallium nitride epitaxial structures for power devices
#1205Semiconductor device, power supply circuit, computer, and method of manufacturing semiconductor device
#1206High-linearity transistors
#1207SEMICONDUCTOR DEVICE, POWER SUPPLY APPARATUS AND HIGH-FREQUENCY AMPLIFIER
#1208Semiconductor devices with raised doped crystalline structures
#1209Asymmetric band gap junctions in narrow band gap MOSFET
#1210Precise junction placement in vertical semiconductor devices using etch stop layers
#1211Electronic device using group III nitride semiconductor and its fabrication method
#1212Electronic device using group III nitride semiconductor and its fabrication method
#1213Transistor having high electron mobility and method of its manufacture
#1214Electronic device using group III nitride semiconductor and its fabrication method
#1215Electronic device using group III nitride semiconductor and its fabrication method
#1216Hemt having heavily doped N-type regions and process of forming the same
#1217Semiconductor device, method for manufacturing semiconductor device, and electronic device
#1218SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1219Semiconductor component with protrusion propagation body and corresponding methods of manufacture
#1220Hetero-junction bipolar transistor and electric device
#1221Bipolar transistor and method for producing the same
#1222Process of forming epitaxial substrate and semiconductor device provided on the same
#1223Nanowire field effect transistor having a metal gate surrounding semiconductor nanowire
#1224High electron mobility transistor (HEMT) device structure
#1225Cascode configured semiconductor component
#1226Method of forming fin shape structure having different buffer layers
#1227Semiconductor substrate having amorphous and single crystalline III-V compound semiconductor layers
#1228Method for manufacturing group III-V nitride semiconductor epitaxial wafer
#1229Schottky barrier rectifier
#1230Indium-rich NMOS transistor channels
#1231High-electron-mobility transistor with buried interconnect
#1232High-electron-mobility transistor devices
#1233GaN-based bidirectional switch device
#1234Pseudomorphic InGaAs on GaAs for gate-all-around transistors
#1235PROCESS OF FORMING SEMICONDUCTOR DEVICE
#1236III-nitride devices including a graded depleting layer
#1237Nitride semiconductor element and nitride semiconductor package
#1238NITRIDE SEMICONDUCTOR SUBSTRATE
#1239High electron mobility transistor and method of forming the same
#1240Normally off HEMT with self aligned gate structure
#1241Field-effect transistor having a bypass electrode connected to the gate electrode connection section
#1242III-V transistor device with self-aligned doped bottom barrier
#1243Process of producing epitaxial substrate
#1244Semiconductor device having high linearity-transconductance
#1245COMPOUND SEMICONDUCTOR DEVICE
#1246High-mobility semiconductor source/drain spacer
#1247THICKNESS UNIFORMITY CONTROL FOR EPITAXIALLY-GROWN STRUCTURES IN A CHEMICAL VAPOR DEPOSITION SYSTEM
#1248High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
#1249High electron mobility transistor with graded back-barrier region
#1250Transistor structure including a scandium gallium nitride back-barrier layer
#1251High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
#1252Device isolation using preferential oxidation of the bulk substrate
#1253Device isolation using preferential oxidation of the bulk substrate
#1254Nanostructure field-effect transistors with enhanced mobility source/drain regions
#1255Semiconductor device and method of manufacturing the same
#1256Symmetric tunnel field effect transistor
#1257Sensing device, sensing apparatus and sensing system
#1258Semiconductor devices and FinFETs
#1259Tunnel barrier schottky
#1260High performance radio frequency switch
#1261Compound semiconductor device and method of manufacturing compound semiconductor device
#1262Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility
#1263HEMTs with an AlxGa1-xN barrier layer grown by plasma enhanced atomic layer deposition
#1264Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
#1265Semiconductors with increased carrier concentration
#1266IC unit and methond of manufacturing the same, and electronic device including the same
#1267III-Nitride transistor including a III-N depleting layer
#1268Method for forming ohmic contacts
#1269Nitride semiconductor device
#1270Transistor and method of forming same
#1271Semiconductor device, method of manufacturing the same and electronic device including the same
#1272SEMICONDUCTOR DEVICE
#1273Semiconductor device
#1274Semiconductor device, method of manufacturing the same and electronic device including the device
#1275Compound semiconductor substrate and fabrication method therefor, compound semiconductor device and fabrication method therefor, power supply apparatus and high-output amplifier
#1276Semiconductor device, manufacturing method of semiconductor device, power unit, and amplifier
#1277Compound semiconductor device including diffusion preventing layer to suppress current collapse phenomenon, method of manufacturing compound semiconductor device, power supply unit, and amplifier
#1278Nitrogen-containing semiconductor device
#1279Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surface
#1280Semiconductor structure having graded transition bodies
#1281Method of planarising a surface
#1282ASYMMETRICAL BLOCKING BIDIRECTIONAL GALLIUM NITRIDE SWITCH
#1283SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE
#1284Asymmetric band gap junctions in narrow band gap MOSFET
#1285Nucleation layer for growth of III-nitride structures
#1286Low-voltage charge-coupled devices with a heterostructure charge-storage well
#1287Method for oxidizing a substrate surface using oxygen
#1288Leakage current suppression methods and related structures
#1289Semiconductor device and method of fabricating the semiconductor device
#1290NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR PACKAGE
#1291Semiconductor device, power supply circuit, and computer
#1292Compound semiconductor device and method of manufacturing the compound semiconductor device
#1293Electronic power devices integrated with an engineered substrate
#1294Process of forming nitride semiconductor layers
#1295Vertical semiconductor diode manufactured with an engineered substrate
#1296Metallic contact for optoelectronic semiconductor device
#1297Semiconductor structure, HEMT structure and method of forming the same
#1298Symmetric tunnel field effect transistor
#1299Low external resistance channels in III-V semiconductor devices
#1300SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
#1301Transistor with a gate metal layer having varying width
#1302High power transistors
#1303Nitride-semiconductor field-effect transistor
#1304Semiconductor device
#1305High power semiconductor device
#1306Electronic device including a HEMT
#1307Structures and methods for providing electrical isolation in semiconductor devices
#1308Isolation regions for semiconductor structures and methods of forming the same
#1309Self-aligning source, drain and gate process for III-V nitride MISHEMTs
#1310Heterostructure power transistor with AlSiN passivation layer
#1311Heterojunction semiconductor device having source and drain pads with improved current crowding
#1312Semiconductor device, power circuit, and computer
#1313Semiconductor device, power circuit, and computer
#1314Semiconductor device, power circuit, computer, and method for manufacturing semiconductor device
#1315Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance
#1316Semiconductor device and method of manufacturing the semiconductor device
#1317PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EARTH NITRIDE DIFFUSION BARRIER REGIONS
#1318Compound semiconductor device and method of manufacturing the same
#1319Layer structure for a group-III-nitride normally-off transistor
#1320METHODS FOR FORMING BIPOLAR TRANSISTORS HAVING COLLECTOR WITH GRADING
#1321Nitride semiconductor device
#1322Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure
#1323Tunneling field effect transistor
#1324Lattice matched and strain compensated single-crystal compound for gate dielectric
#1325Biosensor based on heterojunction bipolar transistor
#1326Vertical CMOS devices with common gate stacks
#1327Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures
#1328Nitride semiconductor device
#1329Semiconductor device
#1330Semiconductor device and manufacturing method of semiconductor device
#1331P-doping of group-III-nitride buffer layer structure on a heterosubstrate
#1332Precise junction placement in vertical semiconductor devices using etch stop layers
#1333High-electron-mobility transistor having a buried field plate
#1334Charge trapping prevention III-Nitride transistor
#1335High electron mobility transistor (HEMT) device and method of making the same
#1336Low dislocation density III-nitride semiconductor component
#1337Semiconductor device, power supply circuit, and computer
#1338Semiconductor device channel system and method
#1339EPITAXIAL SUBSTRATE
#1340Semiconductor device structure and methods of its production
#1341Compound semiconductor substrate and method of forming a compound semiconductor substrate
#1342III-V compound semiconductor channel post replacement gate
#1343Diamond on III-nitride device
#1344Methods of forming a bipolar transistor having a collector with a doping spike
#1345Process of forming an electronic device including a multiple channel HEMT
#1346Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the same
#1347Multi-step surface passivation structures and methods for fabricating same
#1348Modulation device comprising a nanodiode
#1349Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic device
#1350Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith
#1351Double-channel HEMT device and manufacturing method thereof
#1352DIFFUSION TOLERANT III-V SEMICONDUCTOR HETEROSTRUCTURES AND DEVICES INCLUDING THE SAME
#1353Through via extending through a group III-V layer
#1354AlO/InOgate insulator for HEMT
#1355Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
#1356Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regions
#1357MOSFETs with channels on nothing and methods for forming the same
#1358Methods and Apparatus for Variable Selectivity Atomic Layer Etching
#1359Metal nitride alloy contact for semiconductor
#1360Normally-off hetrojunction transistor with high threshold voltage
#1361High electron mobility transistor (HEMT)
#1362Semiconductor structure having a test structure formed in a group III nitride layer
#1363Semiconductor element, semiconductor device, and method for manufacturing same
#1364THIN CHANNEL REGION ON WIDE SUBFIN
#1365Semiconductor quantum dot device and method for forming a scalable linear array of quantum dots
#1366Semiconductor device with selectively etched surface passivation
#1367Gate with self-aligned ledge for enhancement mode GaN transistors
#1368Semiconductor device and manufacturing method thereof
#1369GaN-based power electronic device and method for manufacturing the same
#1370Techniques for forming contacts to quantum well transistors
#1371Extreme high mobility CMOS logic
#1372Semiconductor device and method for manufacturing the semiconductor device
#1373High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current
#1374High-voltage lateral GaN-on-silicon Schottky diode
#1375High-voltage GaN high electron mobility transistors
#1376GaN DEVICES FABRICATED VIA WAFER BONDING
#1377COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR
#1378Semiconductor device and method for manufacturing the same
#1379Protective insulator for HFET devices
#1380High electron mobility transistors with improved heat dissipation
#1381III-V lateral bipolar junction transistor
#1382Methods of making multichannel devices with improved performance
#1383Method of forming trench semiconductor device having multiple trench depths
#1384Graded buffer layers with lattice matched epitaxial oxide interlayers
#1385Group III-N nanowire transistors
#1386Semiconductor substrate with stress relief regions
#1387Patterned layer design for group III nitride layer growth
#1388Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
#1389SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1390Double heterojunction field effect transistor with polarization compensated layer
#1391Semiconductor device
#1392Bypassed gate transistors having improved stability
#1393Semiconductor device having electric field near drain electrode alleviated
#1394Field effect transistor and method of manufacturing the same
#1395High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer
#1396Sidewall passivation for HEMT devices
#1397SEMICONDUCTOR DEVICE FOR ULTRA-HIGH VOLTAGE OPERATION AND METHOD FOR FORMING THE SAME
#1398Device isolation for III-V substrates
#1399Semiconductor device and manufacturing method of the same
#1400Group-III nitride semiconductor device and method for fabricating the same
#1401High power MMIC devices having bypassed gate transistors
#1402III-Nitride transistor with enhanced doping in base layer
#1403Process of forming a high electron mobility transistor (HEMT)
#1404Compound semiconductor device
#1405Semiconductor device
#1406Semiconductor device
#1407SEMICONDUCTOR DEVICE
#1408SEMICONDUCTOR ELEMENT, ELECTRIC EQUIPMENT, BIDIRECTIONAL FIELD EFFECT TRANSISTOR, AND MOUNTED STRUCTURE BODY
#1409Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor
#1410Ingaas epi structure and wet etch process for enabling III-v GAA in art trench
#1411III-nitride based semiconductor device with low vulnerability to dispersion and backgating effects
#1412SEMICONDUCTOR DEVICE
#1413Microelectronic sensor for biometric authentication
#1414Power amplifier modules with bonding pads and related systems, devices, and methods
#1415Schottky diode having a varied width structure
#1416GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
#1417SEMICONDUCTOR DEVICE
#1418Semiconductor structure and manufacturing method thereof
#1419Semiconductor component including aluminum silicon nitride layers
#1420METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR STACKED BODY AND NITRIDE SEMICONDUCTOR STACKED BODY
#1421Group III—nitride double-heterojunction field effect transistor
#1422Static discharge system
#1423Vertical tunnel field effect transistor (FET)
#1424Heterojunction bipolar transistor
#1425Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
#1426Wide band gap transistor on non-native semiconductor substrate
#1427Semiconductor device with selectively etched surface passivation
#1428Spatial terahertz wave phase modulator based on high electron mobility transistor
#1429High electron mobility transistor and fabrication method thereof
#1430Method of forming a reliable and robust electrical contact
#1431Method of forming semiconductor structure having sets of III-V compound layers
#1432III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface
#1433Semiconductor structure and manufacturing method thereof
#1434Enhanced normally-off high electron mobility heterojunction transistor
#1435Electron gas confinement heterojunction transistor
#1436Semiconductor structure comprising an active semiconductor layer of the III-V type on a buffer layer stack and method for producing semiconductor structure
#1437Semiconductor component with a multi-layered nucleation body
#1438CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
#1439Semiconductor device
#1440Three dimensional vertically structured electronic devices
#1441Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole
#1442Gate Metal Structure for Compound Semiconductor Devices
#1443Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
#1444Semiconductor device with passivation layer for control of leakage current
#1445NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
#1446EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR
#1447Fin tunnel field effect transistor (FET)
#1448Semiconductor device and manufacturing method of semiconductor device
#1449Self-aligned gate last III-N transistors
#1450SEMICONDUCTOR MULTILAYER STRUCTURE
#1451Power semiconductor device and method for manufacturing the same
#1452Semiconductor devices with a thermally conductive layer and methods of their fabrication
#1453Methodologies related to structures having HBT and FET
#1454HORIZONTAL SEMICONDUCTOR DEVICE
#1455Three dimensional vertically structured electronic devices
#1456High electron mobility transistor with carrier injection mitigation gate structure
#1457Epitaxial wafer for heterojunction bipolar transistor and heterojunction bipolar transistor
#1458Epitaxial substrate for semiconductor device and method for manufacturing same
#1459Segmented field plate structure
#1460Deep gate-all-around semiconductor device having germanium or group III-V active layer
#1461Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#1462Lateral/vertical semiconductor device with embedded isolator
#1463Nitride semiconductor transistor device
#1464Semiconductor device and method of making a semiconductor device
#1465Semiconductor device having group III-V material active region and graded gate dielectric
#1466Symmetric tunnel field effect transistor
#1467Schottky Barrier Semiconductor Device Having a Nanoscale Film Interface
#1468Selective epitaxially grown III-V materials based devices
#1469Semiconductor structures and methods with high mobility and high energy bandgap materials
#1470Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
#1471Semiconductor device comprising slanted slope electrode contact windows
#1472Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrode
#1473Semiconductor package structure based on cascade circuits
#1474Bipolar transistor, semiconductor device, and bipolar transistor manufacturing method
#1475Method for manufacturing semiconductor structure
#1476Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy
#1477III-V transistor device with self-aligned doped bottom barrier
#1478Method of fabricating an enhancement mode group III-nitride HEMT device and a group III-nitride structure fabricated therefrom
#1479High electron mobility transistor (HEMT)
#1480Field effect transistor
#1481Channel replacement and bimodal doping scheme for bulk finFet threshold voltage modulation with reduced performance penalty
#1482Semiconductor device and method of manufacturing same
#1483Semiconductor device and method for fabricating the same
#1484High electron mobility transistor structure
#1485Semiconductor substrate with electrically isolating dielectric partition
#1486Method of forming an integrated circuit with heat-mitigating diamond-filled channels
#1487Method of forming an integrated circuit with heat-mitigating diamond-filled channels
#1488Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistance
#1489Transistor and method of forming same
#1490Semiconductor device
#1491Ge/SiGe-channel and III-V-channel transistors on the same die
#1492Semiconductor device and method for producing same
#1493Method and apparatus for producing large, single-crystals of aluminum nitride
#1494Frequency-variable terahertz oscillator and method for manufacturing the same
#1495Stress control on thin silicon substrates
#1496Nitride semiconductor device and method of manufacturing the same
#1497Heterojunction semiconductor device for reducing parasitic capacitance
#1498NORMALLY-OFF TRANSISTOR WITH REDUCED ON-STATE RESISTANCE AND MANUFACTURING METHOD
#1499Fabrication process for mitigating external resistance of a multigate device
#1500Semiconductor device and method