Hybrid diode device

Epitaxial buffer layers for group III-N transistors on silicon substrates

Method for manufacturing a HEMT transistor and HEMT transistor with improved electron mobility

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

Semiconductor substrate

Semiconductor electronic device formed of 2-D van der Waals material whose free charge carrier concentration is determined by adjacent semiconductor's polarization

Nitride compound semiconductor

Process of forming semiconductor device

Switching device

Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation

Circuit structure, transistor and semiconductor device

Low-stress low-hydrogen LPCVD silicon nitride

High reliability field effect power device and manufacturing method thereof

Semiconductor device with low band-to-band tunneling

Semiconductor device having diode characteristic

HIGH BREAKDOWN VOLTAGE III-N DEPLETION MODE MOS CAPACITORS

Method for producing trench high electron mobility devices

Buffer stack for group IIIA-N devices

SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

Devices and methods for the rapid and accurate detection of analytes

Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage

Semiconductor device

Semiconductor device, power supply apparatus and high-frequency amplifier

Compound semiconductor device and manufacturing method thereof

III-nitride bidirectional device

Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same

SEMICONDUCTOR APPARATUS

Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same

Hybrid semiconductor structure on a common substrate

Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure

Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor device

Heterostructure device

Compound semiconductor film structure

FABRICATION METHOD OF SEMICONDUCTOR MULTILAYER STRUCTURE

SEMICONDUCTOR DEVICE

Optimized buffer layer for high mobility field-effect transistor

Nitride semiconductor device using insulating films having different bandgaps to enhance performance

Compound semiconductor substrate

Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof

III-N material structure for gate-recessed transistors

Nitride semiconductor device and manufacturing method thereof

SWITCHING DEVICE WITH CHARGE DISTRIBUTION STRUCTURE

Semiconductor device

Apparatus and methods for forming a modulation doped non-planar transistor

Switch Circuit, Semiconductor Device and Method

Schottky diode and method of manufacturing the same

Semiconductor device

Avalanche energy handling capable III-nitride transistors

Semiconductor device

Planar nano-oscillator array having phase locking function

Semiconductor device

Semiconductor device and power converter

Water and Ion Barrier for III-V Semiconductor Devices

III-Nitride semiconductors with recess regions and methods of manufacture

HEMT HAVING HEAVILY DOPED N-TYPE REGIONS AND PROCESS OF FORMING THE SAME

Scalable voltage source

III-V fin on insulator

Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same

Semiconductor device with two-dimensional electron gas

Electronical device

High electron mobility transistor fabrication process on reverse polarized substrate by layer transfer

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Field effect transistor

Method of forming high electron mobility transistor

P-doping of group-III-nitride buffer layer structure on a heterosubstrate

SEMICONDUCTOR DEVICE

Semiconductor device

Semiconductor device

Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrate

SEMICONDUCTOR DEVICE

III-nitride semiconductor structures comprising spatially patterned implanted species

METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES

PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING

Parasitic channel mitigation via back side implantation

PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SPECIES

Heterojunction bipolar transistor

Parasitic channel mitigation using elemental diboride diffusion barrier regions

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIER REGIONS

III-nitride semiconductor structures comprising low atomic mass species

Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions

PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRIER REGIONS

Semiconductor device

Plasma protection diode for a HEMT device

METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES

High-voltage gallium nitride schottky diode

Method to thin down indium phosphide layer

Al-poor barrier for InGaAs semiconductor structure

High electron-mobility transistor

P-tunneling field effect transistor device with pocket

Semiconductor device and manufacturing method thereof

Tunnel barrier schottky

Charge carrier transport facilitated by strain

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

GATE WITH SELF-ALIGNED LEDGED FOR ENHANCEMENT MODE GaN TRANSISTORS

Nitride semiconductor device

Nitride semiconductor device

Semiconductor device including a plurality of nitride semiconductor layers

Semiconductor material having a compositionally-graded transition layer

Semiconductor structure with multilayer III-V heterostructures

Heterojunction semiconductor device for reducing parasitic capacitance

Avalanche-rugged quasi-vertical HEMT

Breakdown resistant HEMT substrate and device

ENHANCEMENT MODE FIELD EFFECT TRANSISTOR WITH DOPED BUFFER AND DRAIN FIELD PLATE

GaN-BASED SCHOTTKY DIODE RECTIFIER

Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system

Bridge diode

Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer

Lead frame connected with heterojunction semiconductor body

Source/drain regions for high electron mobility transistors (HEMT) and methods of forming same

Fabrication of single or multiple gate field plates

Preparation of low defect density of III-V on Si for device fabrication

Cascode configured semiconductor component

Semiconductor device

Cascode configured semiconductor component

III-N transistors with enhanced breakdown voltage

Semiconductor device with multiple carrier channels

Semiconductor device with multiple-functional barrier layer

Integration of semiconductor epilayers on non-native substrates

Nitride semiconductor element and nitride semiconductor package

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Bipolar transistor having collector with doping spike

Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics

Power amplifier modules including tantalum nitride terminated through wafer via and related systems, devices, and methods

Power amplifier modules with harmonic termination circuit and related systems, devices, and methods

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Vertical semiconductor device and manufacturing method thereof

III-nitride power semiconductor device

GaN semiconductor device structure and method of fabrication by substrate replacement

High voltage device with multi-electrode control

III-nitride power semiconductor device

Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods

High performance radio frequency switch

High electron mobility transistor (HEMT) and a method of forming the same

Semiconductor device and semiconductor circuit including the device

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

High-voltage nitride device and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

SEMICONDUCTOR DEVICE

Selective epitaxially grown III-V materials based devices

High breakdown voltage III-N depletion mode MOS capacitors

High electron mobility transistors

Compound semiconductor device and manufacturing method thereof

Gateless switch with capacitively-coupled contacts

Enhancement mode III-N HEMTs

Method of forming a high electron mobility transistor

STRESS CONTROL FOR HETEROEPITAXY

Method of making a three-dimensional memory device having a heterostructure quantum well channel

Devices related to barrier for metallization of gallium based semiconductor

Atomic layer etching of GaN and other III-V materials

Crystalline-amorphous transition material for semiconductor devices and method for formation

Sidewall passivation for HEMT devices

Semiconductor device

Gallium nitride apparatus with a trap rich region

Semiconductor structure with a spacer layer

Operational gallium nitride devices

Semiconductor device

Element, and oscillator and information acquiring device including the element

High electron mobility transistor (HEMT) and method of fabrication

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTOR DEVICE ON THE EPITAXIAL SUBSTRATE

Hetero-junction semiconductor device and method of manufacturing a hetero-junction semiconductor device

III-nitride transistor including a p-type depleting layer

Method for forming group III/V conformal layers on silicon substrates

Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for III-V direct growth and semiconductor device manufactured using the same

Device with a conductive feature formed over a cavity and method therefor

Vertical gallium nitride power field-effect transistor with a field plate structure

Semiconductor device and manufacturing method for the same

Compound semiconductor device

Field effect transistor

Semiconductor device and method of fabricating the same

Multichannel devices with improved performance and methods of making the same

Static discharge system

Nitride semiconductor device

Field effect transistor structure having notched mesa

NITRIDE SEMICONDUCTOR LAYERED BODY, METHOD FOR MANUFACTURING THE SAME, AND NITRIDE SEMICONDUCTOR DEVICE

Ultra massive MIMO communication in the terahertz band

Half-bridge HEMT circuit and an electronic package including the circuit

Patterned layer design for group III nitride layer growth

Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer

Bidirectional HEMT and an electronic package including the bidirectional HEMT

Application of super lattice films on insulator to lateral bipolar transistors

Transistor with hole barrier layer

Electronic device including a bidirectional HEMT

Seed layer structure for growth of III-V materials on silicon

Preparation of low defect density of III-V on Si for device fabrication

Diode device and method for manufacturing the same

Method for fabricating semiconductor device and semiconductor device

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Group III-N nanowire transistors

Integrated multichannel and single channel device structure and method of making the same

Circuit structure having islands between source and drain and circuit formed

Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof

III-nitride transistor with trench gate

Compound semiconductor device and method of manufacturing the same

High-frequency device including high-frequency switching circuit

Method of manufacturing enhanced device and enhanced device

Monolithic integrated circuit (MMIC) structure having composite etch stop layer and method for forming such structure

Heterostructures for semiconductor devices and methods of forming the same

PVD buffer layers for LED fabrication

Nonplanar III-N transistors with compositionally graded semiconductor channels

MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates

Semiconductor device

Semiconductor device having buried region beneath electrode and method to form the same

High electron mobility transistor and method of forming the same

Multichannel devices with gate structures to increase breakdown voltage

Heterojunction bipolar transistor architecture

NORMALLY OFF III-NITRIDE TRANSISTOR

Accelerated failure test of coupled device structures under direct current bias

Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it

SEMICONDUCTOR MULTILAYER STRUCTURE AND FABRICATION METHOD THEREOF

Group III nitride integration with CMOS technology

Semiconductor device and method for manufacturing the same

Fault tolerant design for large area nitride semiconductor devices

High electron mobility transistor with indium nitride layer

Method of manufacturing a transistor with oxidized cap layer

Nitride semiconductor device

Access conductivity enhanced high electron mobility transistor

Semiconductor Device and Manufacturing Method Thereof

Semiconductor Component and Method for Producing a Semiconductor Component in a Substrate having a Crystallographic (100) Orientation

Forming highly conductive source/drain contacts in III-Nitride transistors

Heterogeneous pocket for tunneling field effect transistors (TFETs)

Semiconductor device with driver for switching element

Semiconductor apparatus including barrier film provided between electrode and protection film

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND METHOD OF PRODUCING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

Techniques for forming contacts to quantum well transistors

Field effect transistor

Field effect power transistor metalization having a comb structure with contact fingers

Semiconductor device and manufacturing method thereof

SEMICONDUCTOR DEVICE

Trench semiconductor device having multiple active trench depths and method

Trench semiconductor device having multiple trench depths and method

NITRIDE SEMICONDUCTOR DEVICE HAVING ALUMINUM OXIDE FILM AND A PROCESS FOR PRODUCING THE SAME

Artificially engineered III-nitride digital alloy

SEMICONDUCTOR DEVICE HAVING GUARD METAL THAT SUPPRESS INVASION OF MOISTURE

N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device

Nitride semiconductor

Heterojunction-based HEMT transistor

Reduced current leakage semiconductor device

Reduced current leakage semiconductor device

Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure

Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component

Semiconductor structure including a thermally conductive, electrically insulating layer

Superlattice buffer structure for gallium nitride transistors

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate

Low damage passivation layer for III-V based devices

Semiconductor device

Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack

Deep gate-all-around semiconductor device having germanium or group III-V active layer

Group III-V semiconductor device with strain-relieving layers

High electron mobility transistor

Semiconductor wafer and a method for producing the semiconductor wafer

Group III nitride integration with CMOS technology

Semiconductor device with power transistors coupled to diodes

SEMICONDUCTOR DEVICE

Nitride semiconductor device, production method thereof, diode, and field effect transistor

Semiconductor device having plated metal in electrode and process to form the same

High mobility electron transistor

Semiconductor devices and FinFET devices

GaN-based semiconductor transistor

III-V CMOS integration on silicon substrate via embedded germanium-containing layer

GATE DRIVE APPARATUS

RF power transistor

Enhancement Mode High Electron Mobility Transistor and Manufacturing Method Thereof

Semiconductor device with high electron mobility transistor (HEMT) having source field plate

Compound semiconductor device and method for manufacturing the same

Integrated power device

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Transistor with diamond gate

III-Nitride Transistor with Solderable Front Metal

Semiconductor device

Stress relieving semiconductor layer

High electron mobility transistor

Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy

SEMICONDUCTOR DEVICE

Semiconductor device and a method for manufacturing a semiconductor device

Compound semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method thereof

Bipolar transistor, semiconductor device, and bipolar transistor manufacturing method

Selective epitaxially grown III-V materials based devices

Device isolation for III-V substrates

Group III-N lateral schottky barrier diode and method for manufacturing thereof

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Semiconductor device having group III-V material active region and graded gate dielectric

Field-effect transistor and semiconductor device

Semiconductor device with DC/DC converter circuit

Charge carrier transport facilitated by strain

Forming enhancement mode III-nitride devices

High-electron-mobility transistors

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYER

Field effect transistor

Vertical transistor devices for embedded memory and logic technologies

Compound semiconductor device and method for manufacturing the same

Method for growing epitaxies of a chemical compound semiconductor

Semiconductor device with low-conducting field-controlling element

Multiple Vin III-V FETs