208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the same
#902Multi-step surface passivation structures and methods for fabricating same
#903FIELD-EFFECT TRANSISTOR
#904Thin poly field plate design
#905Semiconductor device
#906Power semiconductor device and method of fabricating the same
#907Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#908SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
#909Double-channel HEMT device and manufacturing method thereof
#910Semiconductor device
#911High-power and high-frequency heterostructure field-effect transistor
#912Transistor structure with field plate for reducing area thereof
#913Semiconductor device
#914Circuit arrangement for fast turn-off of bi-directional switching device
#915High electron mobility transistor structure and method of making the same
#916Edge termination designs for super junction device
#917Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage
#918High electron mobility transistor (HEMT)
#919GaN transistors with polysilicon layers used for creating additional components
#920GaN circuit drivers for GaN circuit loads
#921Semiconductor device with selectively etched surface passivation
#922Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches
#923Gallium nitride nanowire based electronics
#924Semiconductor packaging structure and semiconductor power device thereof
#925High voltage device with low R
#926Super-junction semiconductor device
#927High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current
#928High-voltage lateral GaN-on-silicon Schottky diode
#929Semiconductor device
#930High-voltage GaN high electron mobility transistors
#931HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS WITH REDUCED LEAKAGE CURRENT
#932Electronic device including a HEMT with a segmented gate electrode
#933Reverse-conducting semiconductor device
#934Power transistor die
#935Lateral MOSFET
#936Trench MOSFET shield poly contact
#937Semiconductor device including a mesa groove and a recess groove
#938Semiconductor device and method for manufacturing the same
#939Semiconductor device suppressing electric field concentration and method for manufacturing
#940Method and apparatus for high voltate transistors
#941Methods of Manufacturing Semiconductor Devices
#942Vertical power MOSFET and methods of forming the same
#943Semiconductor device and manufacturing method thereof
#944Semiconductor device and method of manufacturing semiconductor device
#945LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods
#946Semiconductor device capable of high-voltage operation
#947Low-cost semiconductor device manufacturing method
#948Semiconductor device capable of high-voltage operation
#949Semiconductor device
#950Semiconductor device capable of high-voltage operation
#951Semiconductor device including insulating film that includes negatively charged microcrystal
#952MPS diode
#953Power semiconductor device
#954Semiconductor device
#955LDMOS transistor
#956Semiconductor device and manufacturing method thereof
#957Multiple state electrostatically formed nanowire transistors
#958Semiconductor devices and methods for forming a semiconductor device
#959High voltage semiconductor device with reduced peak electric field in active and termination areas of the device
#960Semiconductor device with selectively etched surface passivation
#961Semiconductor device
#962Semiconductor structure having field plate and associated fabricating method
#963Power device on bulk substrate
#964Semiconductor device and semiconductor device manufacturing method
#965Method and apparatus for MOS device with doped region
#966Drift region implant self-aligned to field relief oxide with sidewall dielectric
#967Drift region implant self-aligned to field relief oxide with sidewall dielectric
#968Switching device
#969Segmented field plate structure
#970Semiconductor device
#971High voltage device with low R
#972Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad
#973Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
#974Semiconductor structure and associated fabricating method
#975Method for fabricating of cell pitch reduced semiconductor device and semiconductor device
#976High voltage semiconductor devices and methods for their fabrication
#977Power MOSFETs and methods for forming the same
#978METHOD FOR MANUFACTURING LDMOS DEVICE
#979Semiconductor device and method for manufacturing semiconductor device
#980Power MOSFETs and methods for manufacturing the same
#981Super-junction semiconductor device
#982Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers
#983Field plate power device and method of manufacturing the same
#984Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistance
#985Semiconductor device
#986Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device
#987SEMICONDUCTOR DEVICE
#988LDMOS with adaptively biased gate-shield
#989Semiconductor device
#990Integrated level shifter
#991Methods of manufacturing gallium nitride devices
#992Gallium nitride/ aluminum gallium nitride semiconductor device and method of making a gallium nitride/ aluminum gallium nitride semiconductor device
#993Radio frequency isolation for SOI transistors
#994Nitride semiconductor device and method of manufacturing the same
#995Heterojunction semiconductor device for reducing parasitic capacitance
#996III-nitride field-effect transistor with dual gates
#997Methodology and structure for field plate design
#998Semiconductor device having a voltage resistant structure
#999Power semiconductor device
#1000Semiconductor device
#1001High-electron-mobility transistor and manufacturing method thereof
#1002Circuit structure, transistor and semiconductor device
#1003Super junction field effect transistor with internal floating ring
#1004High voltage semiconductor device
#1005Semiconductor device
#1006Semiconductor chip with integrated series resistances
#1007Split-gate lateral extended drain MOS transistor structure and process
#1008Electrostatic protection device
#1009SEMICONDUCTOR DEVICE
#1010Nitride semiconductor device using insulating films having different bandgaps to enhance performance
#1011Semiconductor device
#1012Semiconductor device and method of manufacturing the same
#1013Semiconductor Device and Method
#1014Extended-drain structures for high voltage field effect transistors
#1015Normally off gallium nitride field effect transistors (FET)
#1016Semiconductor device with two-dimensional electron gas
#1017Multi-Trench Semiconductor Devices
#1018Partially biased isolation in semiconductor device
#1019Partially biased isolation in semiconductor devices
#1020Semiconductor device
#1021Electronical device
#1022Field effect transistor
#1023Semiconductor device and method for manufacturing the same
#1024Trench Schottky rectifier device and method for manufacturing the same
#1025Segmented field plate structure
#1026Lateral power MOSFET with non-horizontal RESURF structure
#1027Semiconductor device
#1028SEMICONDUCTOR DEVICE
#1029High-voltage transistor having shielding gate
#1030Process of forming an electronic device including a drift region, a sinker region and a resurf region
#1031Method and structure for reducing switching power losses
#1032Semiconductor device and method for fabricating the same
#1033Semiconductor device
#1034Semiconductor device
#1035Semiconductor device and manufacturing method thereof
#1036Normally-off field effect transistor
#1037Nitride semiconductor device
#1038Electronic component and manufacturing method thereof
#1039Heterojunction semiconductor device for reducing parasitic capacitance
#1040Split gate power semiconductor field effect transistor
#1041SEMICONDUCTOR DEVICES INCLUDING A METAL OXIDE SEMICONDUCTOR STRUCTURE
#1042Method of forming a semiconductor device termination and structure therefor
#1043Manufacturing method of high-voltage metal-oxide-semiconductor transistor
#1044Fabrication of single or multiple gate field plates
#1045Semiconductor device having schottky electrode connected to anode region
#1046Semiconductor device
#1047Field-plate structures for semiconductor devices
#1048Semiconductor device comprising a clamping structure
#1049Vacuum transistor structure using graphene edge field emitter and screen electrode
#1050Lateral DMOS device with dummy gate
#1051Semiconductor device having a non-depletable doping region
#1052Semiconductor device and manufacturing method thereof
#1053Lateral super-junction MOSFET device and termination structure
#1054GaN semiconductor device structure and method of fabrication by substrate replacement
#1055High voltage device with multi-electrode control
#1056Normally off gallium nitride field effect transistors (FET)
#1057Insulated gate bipolar transistor and manufacturing method therefor
#1058Semiconductor device having source field plate and method of manufacturing the same
#1059Method for manufacturing termination structure of semiconductor device
#1060Method of fabricating a semiconductor device and semiconductor product
#1061Termination structure for gallium nitride schottky diode
#1062SCHOTTKY BARRIER DIODE
#1063Lateral double diffused metal oxide semiconductor field-effect transistor
#1064Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
#1065High Voltage Vertical FPMOS Fets
#1066Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
#1067Semiconductor device and method for manufacturing the same
#1068Compound semiconductor device and method of manufacturing the same
#1069Power MOSFET having planar channel, vertical current path, and top drain electrode
#1070Transistor with contacted deep well region
#1071Mechanisms for semiconductor device structure
#1072Semiconductor device
#1073Power integrated devices, electronic devices including the same, and electronic systems including the same
#1074High voltage semiconductor device and method of manufacturing the same
#1075NLDMOS device and method for manufacturing the same
#1076FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS
#1077Semiconductor structure with a spacer layer
#1078Hybrid active-field gap extended drain MOS transistor
#1079High electron mobility transistor (HEMT) and method of fabrication
#1080Transistor with charge enhanced field plate structure and method
#1081Silicon carbide semiconductor device
#1082Power device integration on a common substrate
#1083Vertical gallium nitride power field-effect transistor with a field plate structure
#1084Enhanced integration of DMOS and CMOS semiconductor devices
#1085Pulsed level shift and inverter circuits for GaN devices
#1086Semiconductor device and method of fabricating the same
#1087Semiconductor device and method of manufacturing semiconductor device
#1088Power semiconductor device
#1089Electromagnetic shield and associated methods
#1090Power semiconductor device and method therefor
#1091Multi-gate device structure including a fin-embedded isolation region and methods thereof
#1092Lateral/vertical semiconductor device
#1093Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device
#1094Semiconductor device having barrier region and edge termination region enclosing barrier region
#1095Lateral high voltage transistor
#1096Electronic device including a conductive electrode
#1097Method for fabricating semiconductor device and semiconductor device
#1098Nitride semiconductor device
#1099Method and power semiconductor device having an insulating region arranged in an edge termination region
#1100Semiconductor Device Comprising a Transistor Including a Body Contact Portion and Method for Manufacturing the Semiconductor Device
#1101Distributed driver circuitry integrated with GaN power transistors
#1102Lateral MOSFET with buried drain extension layer
#1103Silicon carbide semiconductor device
#1104Nanotube semiconductor devices
#1105Semiconductor structure having a junction field effect transistor and a high voltage transistor and method for manufacturing the same
#1106Semiconductor device comprising auxiliary trench structures and integrated circuit
#1107Semiconductor devices with field plates
#1108Methods of operating power semiconductor devices and structures
#1109Multichannel devices with gate structures to increase breakdown voltage
#1110Lateral MOSFET
#1111Trench MOSFET shield poly contact
#1112Zener diode having an adjustable low breakdown voltage
#1113Semiconductor device
#1114Zener diode having an adjustable breakdown voltage
#1115Semiconductor device
#1116Semiconductor device
#1117SEMICONDUCTOR DEVICE
#1118Field effect power transistor metalization having a comb structure with contact fingers
#1119Semiconductor device and manufacturing method thereof
#1120Power semiconductor device having field plate electrode
#1121Semiconductor device
#1122Manufacturing method of semiconductor device and semiconductor device
#1123Method of manufacturing a device having a shield plate dopant region
#1124GALLIUM NITRIDE POWER DEVICES
#1125Method for manufacturing isolation structure integrated with semiconductor device
#1126Power MOSFETs and methods for forming the same
#1127Transistor having gate, first metal-containing material and second metal-containing material with different work functions
#1128Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
#1129Medium voltage MOSFET device
#1130Medium high voltage MOSFET device
#1131Semiconductor device having low-dielectric-constant film
#1132Semiconductor device having buried gate structure and method of fabricating the same
#1133Semiconductor device and a method for forming a semiconductor device
#1134IGBT with built-in diode and manufacturing method therefor
#1135Nitride semiconductor device, production method thereof, diode, and field effect transistor
#1136Semiconductor device with high electron mobility transistor (HEMT) having source field plate
#1137Transistor structure with improved unclamped inductive switching immunity
#1138Lateral double diffused MOS transistors
#1139Compound semiconductor device and manufacturing method of the same
#1140Power semiconductor transistor with improved gate charge
#1141Trench MOSFET having reduced gate charge
#1142Trench MOSFET having reduced gate charge
#1143Semiconductor device
#1144Semiconductor device comprising a bipolar transistor
#1145Semiconductor device and method for manufacturing the semiconductor device
#1146Semiconductor device
#1147Radio frequency LDMOS device and a fabrication method therefor
#1148Power semiconductor device
#1149Semiconductor device having switchable regions with different transconductances
#1150Enhanced breakdown voltages for high voltage MOSFETS
#1151Semiconductor devices and related fabrication methods
#1152LDMOS with adaptively biased gate-shield
#1153Charge-compensation device
#1154Semiconductor device
#1155Semiconductor device
#1156High-voltage transistor with high current load capacity and method for its production
#1157Bipolar junction transistors and methods of fabrication
#1158Diode structures with controlled injection efficiency for fast switching
#1159Device having a shield plate dopant region and method of manufacturing same
#1160JFET DEVICE AND ITS MANUFACTURING METHOD
#1161Electrostatic discharge protection structure and fabrication method thereof
#1162High-voltage semiconductor device and method for manufacturing the same
#1163Semiconductor device
#1164Moisture blocking structure and/or a guard ring, a semiconductor device including the same, and a method of manufacturing the same
#1165BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistor
#1166Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies
#1167Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
#1168Semiconductor device including an insulating layer which includes negatively charged microcrystal
#1169Semiconductor device with guard rings
#1170Methodology and structure for field plate design
#1171Semiconductor structures having a gate field plate and methods for forming such structure
#1172Semiconductor device
#1173Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#1174Super junction field effect transistor with internal floating ring
#1175Patterned back-barrier for III-nitride semiconductor devices
#1176Structures and methods with reduced sensitivity to surface charge
#1177Isolation structure integrated with semiconductor device and manufacturing method thereof
#1178Power superjunction MOSFET device with resurf regions
#1179Semiconductor device and manufacturing method therefor
#1180Semiconductor structure and manufacturing method thereof
#1181Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#1182Semiconductor device and method of operating the same and structure for suppressing current leakage
#1183Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
#1184Semiconductor device with breakdown preventing layer
#1185Semiconductor device with improved field plate
#1186Semiconductor device with improved field plate
#1187High-voltage normally-off field effect transistor with channel having multiple adjacent sections
#1188Integrated circuit with matching threshold voltages and method for making same
#1189Method of forming a semiconductor device
#1190High voltage double-diffused MOS (DMOS) device and method of manufacture
#1191High voltage double-diffused MOS (DMOS) device and method of manufacture
#1192Quasi-vertical structure having a sidewall implantation for high voltage MOS device and method of forming the same
#1193Metalization of a field effect power transistor
#1194Semiconductor device with variable resistive element
#1195GaN transistors with polysilicon layers used for creating additional components
#1196Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method
#1197GaN structures
#1198Dummy gate for a high voltage transistor device
#1199SEMICONDUCTOR DEVICE
#1200Heterojunction field effect transistor