208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
FIELD EFFECT TRANSISTOR
#1202Trench insulated gate bipolar transistor and manufacturing method thereof
#1203Semiconductor device and manufacturing method thereof
#1204LDMOS for high frequency power amplifiers
#1205Trench schottky rectifier device and method for manufacturing the same
#1206Semiconductor Device with Breakdown Preventing Layer
#1207Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
#1208Semiconductor device and a method for manufacturing a semiconductor device
#1209Semiconductor devices with integrated hole collectors
#1210Nitride semiconductor device using insulating films having different bandgaps to enhance performance
#1211Trenched Faraday shielding
#1212Bidirectional trench FET with gate-based resurf
#1213Semiconductor device and manufacturing method for the same
#1214Semiconductor component and method of manufacture
#1215Electrodes for semiconductor devices and methods of forming the same
#1216Compound semiconductor device
#1217Semiconductor device and method of manufacturing the same
#1218Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#1219Semiconductor device and method of manufacturing the same
#1220Reduction of degradation due to hot carrier injection
#1221Power MOSFET, an IGBT, and a power diode
#1222Lateral/vertical semiconductor device
#1223Transistor and circuit using same
#1224Vertical power MOSFET having planar channel and its method of fabrication
#1225Edge termination structure having a termination charge region below a recessed field oxide region
#1226Integrated LDMOS devices for silicon photonics
#1227A RADIO FREQUENCY POWER DEVICE FOR IMPLEMENTING ASYMMETRIC SELF-ALIGNMENT OF THE SOURCE, DRAIN AND GATE AND THE PRODUCTION METHOD THEREOF
#1228High electron mobility transistor structure
#1229Semiconductor device
#1230Semiconductor device
#1231Split gate power semiconductor field effect transistor
#1232Gate contact for a semiconductor device and methods of fabrication thereof
#1233Semiconductor device and manufacturing method thereof
#1234Semiconductor device
#1235Integrated termination for multiple trench field plate
#1236Circuit structure, transistor and semiconductor device
#1237Semiconductor device with selectively etched surface passivation
#1238Semiconductor device and manufacturing method thereof
#1239Semiconductor device
#12403DIC Interconnect Devices and Methods of Forming Same
#1241METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALIGNED SOURCE AND GATE
#1242Group III-V Device Including a Shield Plate
#1243High electron mobility semiconductor device and method therefor
#1244Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologies
#1245Semiconductor devices having super-junction trenches with conductive regions and method of making the same
#1246Semiconductor device with trench structure and manufacturing method thereof
#1247VDMOS having a drift zone with a compensation structure
#1248VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body
#1249Cascoded high voltage junction field effect transistor
#1250Transistors with isolation regions
#1251A HIGH ELECTRON MOBILITY DEVICE BASED ON THE GATE-FIRST PROCESS AND THE PRODUCTION METHOD THEREOF
#1252Method of manufacturing compound semiconductor device
#1253Termination structure of semiconductor device and method for manufacturing the same
#1254Semiconductor device
#1255Integrated electronic device and method for manufacturing thereof
#1256Semiconductor diode and method of manufacture
#1257Vertical power MOSFET and methods of forming the same
#1258Silicon carbide semiconductor device
#1259Super junction semiconductor device including edge termination
#1260Semiconductor device, switching power supply control IC, and switching power supply device
#1261Integrated semiconductor device having a level shifter
#1262Integrated transistor structure having a power transistor and a bipolar transistor
#1263Vertical MOS semiconductor device for high-frequency applications, and related manufacturing process
#1264Semiconductor device and manufacturing method thereof
#1265High speed gallium nitride transistor devices
#1266Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#1267Transistor with elevated drain termination
#1268High voltage field effect transitor finger terminations
#1269Process of forming an electronic device having a termination region including an insulating region
#1270Electronic device having a termination region including an insulating region
#1271Power superjunction MOSFET device with resurf regions
#1272Trench transistor device
#1273Method for manufacturing a semiconductor device with step-shaped edge termination
#1274Semiconductor device including a vertical edge termination structure and method of manufacturing
#1275Semiconductor device and method of manufacturing the same
#1276Semiconductor device
#1277Semiconductor device
#1278Trench MOS semiconductor device
#1279Breakdown voltage multiplying integration scheme
#1280Semiconductor device
#1281Semiconductor device and manufacturing method for the same
#1282Method of manufacturing a silicon carbide semiconductor device
#1283Power semiconductor device with dual field plate arrangement and method of making
#1284Semiconductor component and integrated circuit
#1285Semiconductor device
#1286SWITCHING POWER SUPPLY
#1287Semiconductor device
#1288POWER SEMICONDUCTOR DEVICE,POWER ELECTRONIC MODULE, AND METHOD FOR PROCESSING A POWER SEMICONDUCTOR DEVICE
#1289Electronic circuit and method for operating a transistor arrangement
#1290Semiconductor device and method of making the same
#1291Low-cost semiconductor device manufacturing method
#1292Semiconductor structure including guard ring
#1293III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
#1294SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1295Gate drivers for circuits based on semiconductor devices
#1296Circuit arrangement
#1297Group III-nitride-based enhancement mode transistor
#1298Method and apparatus for MOS device with doped region
#1299Transistor structure with feed-through source-to-substrate contact
#1300Semiconductor device
#1301Heterojunction semiconductor device for reducing parasitic capacitance
#1302Methods of manufacturing semiconductor devices
#1303Semiconductor device and operating method thereof
#1304Protection circuit including vertical gallium nitride schottky diode and PN junction diode
#1305Diode
#1306Vertical power MOSFET with planar channel and vertical field plate
#1307Semiconductor multi-layer substrate and semiconductor element
#1308MOS-gated power devices, methods, and integrated circuits
#1309Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
#1310Structures and methods with reduced sensitivity to surface charge
#1311Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1312Semiconductor device with a step gate dielectric structure
#1313High voltage double-diffused MOS (DMOS) device and method of manufacture
#1314Shielded gate trench MOS with improved source pickup layout
#1315Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1316FIELD-EFFECT TRANSISTOR FOR HIGH VOLTAGE DRIVING AND MANUFACTURING METHOD THEREOF
#1317Semiconductor device
#1318Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
#1319Quasi-vertical structure having a sidewall implantation for high voltage MOS device
#1320Semiconductor element including active region, low resistance layer and vertical drift portion
#1321Semiconductor devices with field plates
#1322Lateral MOS power transistor having front side drain electrode and back side source electrode
#1323Lateral MOSFET with buried drain extension layer
#1324FIELD EFFECT TRANSISTOR
#1325Semiconductor device and method of fabricating the same
#1326Semiconductor device and method for manufacturing the same
#1327Electronic device including a vertical conductive structure
#1328Semiconductor device
#1329Power MOSFETs and methods for forming the same
#1330Semiconductor power devices and methods of manufacturing the same
#1331Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
#1332Semiconductor device including a MOSFET and having a super-junction structure
#1333Semiconductor device and method of manufacturing the same
#1334Nanotube semiconductor devices
#1335Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#1336Trench-gate semiconductor device and method for forming the same
#1337Semiconductor device
#1338Electric field management for a group III-nitride semiconductor device
#1339Isolated gate field effect transistor and manufacture method thereof
#1340Transistors with field plates resistant to field plate material migration and methods of their fabrication
#1341Semiconductor device, integrated circuit and method of forming a semiconductor device
#1342High voltage junction field effect transistor
#1343Vertical gallium nitride JFET with gate and source electrodes on regrown gate
#1344Semiconductor device with selectively etched surface passivation
#1345Semiconductor device and method for manufacturing semiconductor device
#1346Lateral diffused semiconductor device with ring field plate
#1347Mechanisms for semiconductor device structure
#1348Nitride semiconductor device and method for manufacturing same
#1349Method of making structure having a gate stack
#1350Semiconductor device and fabrication method of semiconductor device
#1351Power semiconductor devices, structures, and related methods
#1352High electron mobility transistor
#1353Semiconductor device
#1354Semiconductor device
#1355Semiconductor device having conductive feature overlapping an edge of an active region
#1356Lateral double diffused metal-oxide-semiconductor device and method for fabricating the same
#1357Method of fabricating high voltage metal-oxide-semiconductor transistor device
#1358Method of manufacturing a termination arrangement for a vertical MOSFET
#1359SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
#1360Nitride semiconductor device
#1361Superjunction structures for power devices and methods of manufacture
#1362Semiconductor element and method for producing the same
#1363MOS transistor and method for manufacturing MOS transistor
#1364Semiconductor device and method for forming the same
#1365Semiconductor device including an electrode structure formed on nitride semiconductor layers
#1366Lateral PNP bipolar transistor formed with multiple epitaxial layers
#1367SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, SCHOTTKY BARRIER DIODE, AND FIELD EFFECT TRANSISTOR
#1368Semiconductor structure with deep trench thermal conduction
#1369SEMICONDUCTOR DEVICE
#1370HEMT with a metal film between the gate electrode and the drain electrode
#1371Silicon carbide semiconductor device
#1372Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistor
#1373Vertical power MOSFET and methods of forming the same
#1374Semiconductor device with multiple space-charge control electrodes
#1375Semiconductor device
#1376Semiconductor devices with guard rings
#1377Trench schottky rectifier device and method for manufacturing the same
#1378Semiconductor structure with deep trench thermal conduction
#1379Semiconductor device including a MOSFET
#1380Power semiconductor device and fabrication method thereof
#1381Production method for a semiconductor device
#1382Semiconductor device and method for manufacturing semiconductor device
#1383Power semiconductor device and method
#1384Semiconductor device having a surface with ripples
#1385Increasing Ion/Ioff ratio in FinFETs and nano-wires
#1386High-voltage metal-insulator-semiconductor field effect transistor structures
#1387Field device and method of operating high voltage semiconductor device applied with the same
#1388Device and method for a LDMOS design for a FinFET integrated circuit
#1389Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area
#1390Integrated circuit with matching threshold voltages and method for making same
#1391Vertical channel transistor with self-aligned gate electrode and method for fabricating the same
#1392SEMICONDUCTOR DEVICE
#1393Semiconductor component having a transition region
#1394Semiconductor device
#1395GaN device with reduced output capacitance and process for making same
#1396GaN transistors with polysilicon layers for creating additional components
#1397Electromagnetic shield and associated methods
#1398Semiconductor device and method for fabricating the same
#1399III-nitride semiconductor device with reduced electric field between gate and drain
#1400Semiconductor device, and a method of improving breakdown voltage of a semiconductor device
#1401High-voltage field-effect transistor having multiple implanted layers
#1402III-nitride semiconductor device with reduced electric field
#1403Gallium nitride nanowire based electronics
#1404Semiconductor device
#1405POWER INTEGRATED DEVICE HAVING SURFACE CORRUGATIONS
#1406Wide band gap semiconductor device
#1407High side DMOS and the method for forming thereof
#1408Selectively area regrown III-nitride high electron mobility transistor
#1409Semiconductor device including a drift zone and a drift control zone
#1410Semiconductor device and method of manufacturing the semiconductor device
#1411Method of manufacturing a semiconductor device
#1412POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
#1413High-voltage transistor device and production method
#1414Cascode structures with GaN cap layers
#1415Recessed field plate transistor structures
#1416Cascode structures for GaN HEMTs
#1417Production method for semiconductor device
#1418Guarding ring structure of a high voltage device and manufacturing method thereof
#1419Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device
#1420III-n device with dual gates and field plate
#1421Semiconductor device and circuit with dynamic control of electric field
#1422Vertical power MOSFET and methods for forming the same
#1423Lateral transistor component and method for producing same
#1424High voltage device
#1425High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#1426Semiconductor device
#1427Compound semiconductor device and method of manufacturing the same
#1428Bipolar transistor having laterally extending collector
#1429Lateral double-diffused MOS transistor having deeper drain region than source region
#1430Power superjunction MOSFET device with resurf regions
#1431SEMICONDUCTOR DEVICE
#1432Gate drivers for circuits based on semiconductor devices
#1433Power device integration on a common substrate
#1434Perforated channel field effect transistor
#1435Power device chip and method of manufacturing the power device chip
#1436Semiconductor devices
#1437Semiconductor structure with deep trench thermal conduction
#1438Bipolar junction transistor and operating and manufacturing method for the same
#1439Strip-ground field plate
#1440High-voltage semiconductor device
#1441Low on resistance semiconductor device
#1442Electronic device including vertical conductive regions and a process of forming the same
#1443Accumulation-mode field effect transistor with improved current capability
#1444Ohmic contact structure for semiconductor device and method
#1445High electron mobility semiconductor device and method therefor
#1446Transistor with charge enhanced field plate structure and method
#1447Hybrid active-field gap extended drain MOS transistor
#1448DMOS transistor including a gate dielectric having a non-uniform thickness
#1449Charge protection for III-nitride devices
#1450Semiconductor device
#1451LDMOS with improved breakdown voltage
#1452Field effect transistor with self-adjusting threshold voltage
#1453TFET with nanowire source
#1454Method for forming a power semiconductor device
#1455Method and system for fabricating floating guard rings in GaN materials
#1456Semiconductor device and related fabrication methods
#1457Transistors with isolation regions
#1458Insulated gate semiconductor device and method for manufacturing the same
#1459Electrodes for semiconductor devices and methods of forming the same
#1460Compound semiconductor device and method for manufacturing the same
#1461Semiconductor device
#1462Semiconductor device including an edge area and method of manufacturing a semiconductor device
#1463Semiconductor device
#1464Method for manufacturing compound semiconductor device
#1465Semiconductor device
#1466Method of forming high voltage device
#1467Semiconductor device
#1468Power semiconductor device
#1469Customized shield plate for a field effect transistor
#1470Transistor structure having a trench drain
#1471Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same
#1472Normally off gallium nitride field effect transistors (FET)
#1473High electron mobility transistor structure with improved breakdown voltage performance
#1474Transistor and method of fabricating the same
#1475Semiconductor devices with field plates
#1476High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#1477Hybrid high voltage device and manufacturing method thereof
#1478Power semiconductor device capable of maintaining a withstand voltage
#1479High-voltage Schottky diode and manufacturing method thereof
#1480Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound
#1481Transistor with enhanced channel charge inducing material layer and threshold voltage control
#1482High voltage MOSFET diode reverse recovery by minimizing P-body charges
#1483Method of fabricating power transistor with protected channel
#1484Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure
#1485High-voltage transistor having shielding gate
#1486LDMOS device with minority carrier shunt region
#1487Power semiconductor device and method for manufacturing the same
#1488Lateral MOSFET
#1489MOS-gated power devices, methods, and integrated circuits
#1490Semiconductor device
#1491Nitride semiconductor element and method of manufacturing the same
#1492Field plate assisted resistance reduction in a semiconductor device
#1493Semiconductor device
#1494Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench
#1495Advanced faraday shield for a semiconductor device
#1496Gallium nitride power devices
#1497Nitride semiconductor element with selectively provided conductive layer under control electrode
#1498Schottky diode structure and method of fabrication
#1499Transistor structure with feed-through source-to-substrate contact
#1500Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body