208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Compound semiconductor device and method of manufacturing the same
#1502Dual depth trench-gated mos-controlled thyristor with well-defined turn-on characteristics
#1503Electronic device including a transistor and a vertical conductive structure
#1504Semiconductor device with breakdown preventing layer
#1505Normally-off high electron mobility transistor
#1506High-breakdown-voltage power semiconductor device having a diode
#1507Semiconductor device
#1508Power supply circuit and power supply apparatus
#1509Field device and method of operating high voltage semiconductor device applied with the same
#1510Trench Schottky rectifier device and method for manufacturing the same
#1511Lateral/vertical semiconductor device
#1512Semiconductor device manufacturing method
#1513Method for protecting a semiconductor device against degradation and a method for manufacturing a semiconductor device protected against hot charge carriers
#1514Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
#1515Semiconductor device and related fabrication methods
#1516Active area shaping of III-nitride devices utilizing steps of source-side and drain-side field plates
#1517Active area shaping of III-nitride devices utilizing a source-side field plate and a wider drain-side field plate
#1518Semiconductor device
#1519Split-gate lateral diffused metal oxide semiconductor device
#1520MOS type semiconductor device
#1521Semiconductor device
#1522GaN dual field plate device with single field plate metal
#1523Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#1524Semiconductor device with HCI protection region
#1525Power semiconductor devices, structures, and related methods
#1526Bipolar junction transistor in silicon carbide with improved breakdown voltage
#1527Lateral semiconductor device
#1528Semiconductor device and method for fabricating the same
#1529Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1530Method of making structure having a gate stack
#1531Bipolar transistor
#1532RF LDMOS device and fabrication method thereof
#1533Semiconductor device and method of making the same
#1534Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1535Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1536HIGH VOLTAGE DEVICE
#1537Power device integration on a common substrate
#1538Radio frequency isolation for SOI transistors
#1539Semiconductor structures and methods of manufacture
#1540Electronic device including a tapered trench and a conductive structure therein
#1541Power device integration on a common substrate
#1542Semiconductor device
#1543Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
#1544Semiconductor structure for antenna switching circuit
#1545RF CMOS transistor design
#1546LDMOS device and method for improved SOA
#1547Power semiconductor device
#1548P-type graphene base transistor
#1549Dummy gate for a high voltage transistor device
#1550Semiconductor device
#1551LDMOS sense transistor structure for current sensing at high voltage
#1552High electron mobility transistor and method of manufacturing the same
#1553High electron mobility transistor and method of manufacturing the same
#1554High electron mobility transistors and methods of manufacturing the same
#1555Compound semiconductor device having overhang-shaped gate
#1556Integrated semiconductor device and a bridge circuit with the integrated semiconductor device
#1557Semiconductor device with charge carrier lifetime reduction means
#1558Semiconductor device
#1559Semiconductor device and method for manufacturing semiconductor device
#1560Semiconductor device and method of manufacturing the same
#1561Method for fabricating semiconductor device and semiconductor device
#1562Semiconductor devices with integrated hole collectors
#1563Semiconductor Device and Method for Producing a Doped Semiconductor Layer
#1564Group III-nitride transistor using a regrown structure
#1565Hybrid high voltage device and manufacturing method thereof
#1566Level shift power semiconductor device
#1567Power transistor and associated method for manufacturing
#1568Semiconductor device having power metal-oxide-semiconductor transistor
#1569Field effect transistor
#1570Semiconductor device with selectively etched surface passivation
#1571Semiconductor device with selectively etched surface passivation
#1572Reverse conducting IGBT
#1573SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1574High electron mobility transistor structure and method
#1575Semiconductor element, manufacturing method thereof and operating method thereof
#1576Power semiconductor device and method therefor
#1577Semiconductor device
#1578Semiconductor device
#1579Vertical channel transistor with self-aligned gate electrode and method for fabricating the same
#1580Vertical power MOSFET and methods of forming the same
#1581Vertical power MOSFET and methods for forming the same
#1582Vertical power MOSFET and methods of forming the same
#1583Compound semiconductor transistor with self aligned gate
#1584MOS Transistor with Multi-finger Gate Electrode
#1585Termination arrangement for vertical MOSFET
#1586GROUP III-NITRIDE TRANSISTOR WITH CHARGE-INDUCING LAYER
#1587Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
#1588Schottky barrier diode having a trench structure
#1589Double diffused drain metal oxide semiconductor device and manufacturing method thereof
#1590Thyristor component
#1591Semiconductor device having a diffusion region
#1592Transistor having elevated drain finger termination
#1593Method of fabricating a power semiconductor chip package
#1594Nitride semiconductor device
#1595Schottky barrier diode and method for manufacturing schottky barrier diode
#1596Schottky diode with enhanced breakdown voltage
#1597Methods for fabricating high voltage field effect transistor finger terminations
#1598Power semiconductor device
#1599LDMOS DEVICE WITH FIELD EFFECT STRUCTURE TO CONTROL BREAKDOWN VOLTAGE, AND METHODS OF MAKING SUCH A DEVICE
#1600Corner layout for superjunction device
#1601High voltage field effect transistor finger terminations
#1602High speed gallium nitride transistor devices
#1603Semiconductor device with false drain
#1604Semiconductor device and manufacturing method of the same
#1605Semiconductor device and method for manufacturing same
#1606Trench-gate field effect transistor
#1607Power MOSFET
#1608Power semiconductor device
#1609Apparatus related to a diode device including a JFET portion
#1610SEMICONDUCTOR DEVICE
#1611Breakdown voltage multiplying integration scheme
#1612Schottky contact
#1613Enhancement mode GaN HEMT device
#1614Semiconductor device and manufacturing method of semiconductor device
#1615Semiconductor device
#1616High-voltage transistor, ESD-protection circuit, and use of a high-voltage transistor in an ESD-protection circuit
#1617High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
#1618Semiconductor device
#1619Semiconductor device including a MOSFET and Schottky junction
#1620Medium voltage MOSFET device
#1621High electron mobility transistors with field plate electrode
#1622Method for manufacturing semiconductor device including an inverted region formed by doping second conductive type impurities into diffusion region of a first conductive type
#1623Lateral double diffused MOS transistors and methods of fabricating the same
#1624High voltage MOSFET device
#1625Trench Schottky barrier diode and manufacturing method thereof
#1626Lateral DMOS device with dummy gate
#1627Surface (lateral) voltage-sustaining region with an insulator film containing conductive particles
#1628Semiconductor device with an oversized local contact as a Faraday shield
#1629Semiconductor diode and method for forming a semiconductor diode
#1630Method and system for a GaN vertical JFET with self-aligned source and gate
#1631High electron mobility transistor structure with improved breakdown voltage performance
#1632Method and system for fabricating edge termination structures in GaN materials
#1633Electronic device including a tapered trench and a conductive structure therein and a process of forming the same
#1634Electronic device comprising conductive structures and an insulating layer between the conductive structures and within a trench
#1635Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
#1636Compound semiconductor device with buried field plate
#1637Nitride semiconductor device
#1638Semiconductor device
#1639SEMICONDUCTOR HAVING INTEGRALLY-FORMED ENHANCED THERMAL MANAGEMENT
#1640Customized shield plate for a field effect transistor
#1641Semiconductor device including stepped gate electrode and fabrication method thereof
#1642Enhancement-mode HFET circuit arrangement having high power and a high threshold voltage
#1643Compound semiconductor device and manufacturing method of the same
#1644Vertical GaN JFET with gate source electrodes on regrown gate
#1645GaN high voltage HFET with passivation plus gate dielectric multilayer structure
#1646Semiconductor device and method of forming a power MOSFET with interconnect structure to achieve lower RDSON
#1647Power MOSFETs and methods for forming the same
#1648Substrate breakdown voltage improvement for group III-nitride on a silicon substrate
#1649GaN-based Schottky barrier diode with field plate
#1650Polarization super-junction low-loss gallium nitride semiconductor device
#1651Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact
#1652Method and system for fabricating floating guard rings in GaN materials
#1653Vertical gallium nitride Schottky diode
#1654Electronic device and method for fabricating an electronic device
#1655SEMICONDUCTOR DEVICE
#1656HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD
#1657Semiconductor device with hetero-junction bodies
#1658Semiconductor structure and method for forming the same
#1659GROUP III-NITRIDE METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
#1660TRENCH TYPE PIP CAPACITOR, POWER INTEGRATED CIRCUIT DEVICE USING THE CAPACITOR, AND METHOD OF MANUFACTURING THE POWER INTEGRATED CIRCUIT DEVICE
#1661High voltage device
#1662High-voltage MOSFETs having current diversion region in substrate near fieldplate
#1663Power MOSFET device structure for high frequency applications
#1664Semiconductor power device integrated with improved gate source ESD clamp diodes
#1665SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1666SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#1667Semiconductor structure including guard ring
#1668Semiconductor including lateral HEMT
#1669Lateral PNP bipolar transistor formed with multiple epitaxial layers
#1670Semiconductor device
#1671Power semiconductor device and fabrication method thereof
#1672FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
#1673Field effect transistor
#1674SILICON CARBIDE MOSFET WITH HIGH MOBILITY CHANNEL
#1675SEMICONDUCTOR DEVICE WITH HIGH-VOLTAGE BREAKDOWN PROTECTION
#1676Semiconductor device having schottky diode structure
#1677SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1678Semiconductor devices with guard rings
#1679High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
#1680High density gallium nitride devices using island topology
#1681Power MOSFET, an IGBT, and a power diode
#1682Transistor structure having a trench drain
#1683Silicon carbide semiconductor device
#1684LATERAL TRANSISTOR WITH CAPACITIVELY DEPLETED DRIFT REGION
#1685Dual-gate normally-off nitride transistors
#1686Power semiconductor device and method for manufacturing same
#1687MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures
#1688Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures
#1689Nanotube semiconductor devices and nanotube termination structures
#1690Power MOSFET with integrated gate resistor and diode-connected MOSFET
#1691High voltage bipolar transistor with trench field plate
#1692Semiconductor device
#1693Method of manufacturing a reverse blocking insulated gate bipolar transistor
#1694Gated AlGaN/GaN Schottky device
#1695Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
#1696Semiconductor structure and manufacturing method for the same
#1697METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
#1698Bipolar junction transistor
#1699Semiconductor device production method
#1700Electromagnetic shield and associated methods
#1701Fast switching hybrid IGBT device with trenched contacts
#1702Compound semiconductor device and method for manufacturing the same
#1703Semiconductor device
#1704Trench power MOSFET structure with high switching speed and fabrication method thereof
#1705High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
#1706Semiconductor device
#1707Semiconductor device and driving circuit
#1708Power semiconductor device and a method for forming a semiconductor device
#1709Overvoltage and/or electrostatic discharge protection device
#1710Device having a gate stack
#1711High-voltage transistor having multiple dielectrics and production method
#1712Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
#1713Semiconductor devices with screening coating to inhibit dopant deactivation
#1714GALLIUM NITRIDE OR OTHER GROUP III/V-BASED SCHOTTKY DIODES WITH IMPROVED OPERATING CHARACTERISTICS
#1715Superjunction structures for power devices and methods of manufacture
#1716HIGH ELECTRON MOBILITY TRANSISTOR
#1717Superjunction Structures for Power Devices and Methods of Manufacture
#1718Semiconductor Device and Electric Power Conversion Device Using Same
#1719Method of fabricating a semiconductor device including a gate having a plurality of fingers extended over a plurality of isolation regions
#1720Superjunction structures for power devices and methods of manufacture
#1721Top drain LDMOS
#1722Through silicon via processing techniques for lateral double-diffused MOSFETS
#1723Superjunction structures for power devices and methods of manufacture
#1724Superjunction structures for power devices and methods of manufacture
#1725Nitride semiconductor device and manufacturing method thereof
#1726Semicondutor device
#1727NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1728Nitride semiconductor device and manufacturing method thereof
#1729Vertical junction field effect transistors with improved thermal characteristics and methods of making
#1730MONOLITHIC INTEGRATED CAPACITORS FOR HIGH-EFFICIENCY POWER CONVERTERS
#1731Electronic device including an integrated circuit with transistors coupled to each other
#1732Semiconductor device
#1733FIELD PLATE AND CIRCUIT THEREWITH
#1734TRENCH-GATE LDMOS STRUCTURES
#1735Semiconductor device
#1736NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1737High voltage semiconductor device and driving circuit
#1738High electron mobility transistor circuit
#1739Normally-off semiconductor devices
#1740High-Voltage MOSFET with High Breakdown Voltage and Low On-Resistance and Method of Manufacturing the Same
#1741LDMOS with improved breakdown voltage
#1742High temperature performance capable gallium nitride transistor
#1743Semiconductor diodes with low reverse bias currents
#1744Methods related to power semiconductor devices with thick bottom oxide layers
#1745Compound semiconductor device and method for manufacturing the same
#1746SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1747Semiconductor device
#1748Compound semiconductor device
#1749Schottky diode
#1750Super-junction semiconductor device
#1751Split-gate lateral diffused metal oxide semiconductor device
#1752High-speed high-power semiconductor devices
#1753GaN HEMTs with a back gate connected to the source
#1754Structure and method for fabrication of field effect transistor gates with or without field plates
#1755Structure And Method For Fabrication Of Field Effect Transistor Gates With Or Without Field Plates
#1756Compound semiconductor device, method for manufacturing the device and electric device
#1757Semiconductor device and method for manufacturing the same
#1758Low noise amplifiers including group III nitride based high electron mobility transistors
#1759Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1760Semiconductor device and method of manufacturing the same
#1761Method of forming a semiconductor device termination and structure therefor
#1762Trench power MOSFET with reduced on-resistance
#1763Edge termination with improved breakdown voltage
#1764Semiconductor element
#1765SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1766Method for forming accumulation-mode field effect transistor with improved current capability
#1767CO-PACKAGING APPROACH FOR POWER CONVERTERS BASED ON PLANAR DEVICES, STRUCTURE AND METHOD
#1768Semiconductor devices and power conversion systems
#1769Enhancement mode gallium nitride power devices
#1770Single structure cascode device
#1771Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same
#1772Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method
#1773Radiation hardened bipolar injunction transistor
#1774Semiconductor device, and its manufacturing method
#1775Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
#1776Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates
#1777Semiconductor power device having a super-junction structure
#1778LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation film
#1779Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts
#1780Transistors with isolation regions
#1781Method for producing a semiconductor component with insulated semiconductor mesas
#1782Method of manufacturing semiconductor device
#1783Method and apparatus for controlling a circuit with a high voltage sense device
#1784SILICON CARBIDE SEMICONDUCTOR DEVICE
#1785Wide bandgap transistor devices with field plates
#1786Semiconductor device having a split gate and a super-junction structure
#1787Semiconductor apparatus
#1788Compound semiconductor device having insulation film with different film thicknesses beneath electrodes
#1789Semiconductor device and method of manufacturing the same
#1790Semiconductor device
#1791Semiconductor device including separated gate electrode and conductive layer
#1792Bipolar transistor with guard region
#1793Semiconductor device with superjunction structure
#1794Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
#1795Structure and method for forming trench-gate field effect transistor with source plug
#1796Power converter
#1797Low resistance LDMOS with reduced gate charge
#1798Dummy gate for a high voltage transistor device
#1799Hybrid active-field gap extended drain MOS transistor
#1800Power semiconductor devices, structures, and related methods