208312 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor Field plates
Lateral Floating Coupled Capacitor Device Termination Structures
#1802COMPOUND SEMICONDUCTOR DEVICE
#1803Semiconductor component including a lateral transistor component
#1804High voltage MOS device and method for making the same
#1805Semiconductor device with peripheral base region connected to main electrode
#1806Field effect transistors having improved breakdown voltages and methods of forming the same
#1807Power semiconductor device
#1808Field modulating plate and circuit
#1809SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1810Power semiconductor chip package
#1811Control device of semiconductor device
#1812Power semiconductor device and method of manufacturing the same
#1813Semiconductor device
#1814Integrated electronic device with edge-termination structure and manufacturing method thereof
#1815Integrated electronic device and method for manufacturing thereof
#1816GaN based HEMTs with buried field plates
#1817Semiconductor device
#1818Power MOSFET and its edge termination
#1819RESURF device including increased breakdown voltage
#1820APPARATUS WITH CAPACITIVE COUPLING AND ASSOCIATED METHODS
#1821Semiconductor device with protective films and manufacturing method thereof
#1822Equal Potential Ring Structures of Power Semiconductor with Trenched Contact
#1823Semiconductor device and manufacturing method thereof
#1824Semiconductor device
#1825Schottky diode
#1826Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
#1827LATERAL DRAIN MOSFET WITH SUBSTRATE DRAIN CONNECTION
#1828Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor
#1829Semiconductor integrated circuit with high withstand voltage element forming trench isolation on substrate
#1830Method of fabricating a high-voltage transistor with an extended drain structure
#1831Semiconductor device with field plates
#1832Method for fabricating SOI high voltage power chip with trenches
#1833Power semiconductor element with two-stage impurity concentration profile
#1834High-voltage bipolar transistor with trench field plate
#1835Semiconductor device
#1836Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contact
#1837SCHOTTKY DIODE WITH COMBINED FIELD PLATE AND GUARD RING
#1838Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same
#1839Junction field effect transistor structure
#1840Methods of manufacturing power semiconductor devices with shield and gate contacts
#1841Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
#1842Process for manufacturing power integrated devices having surface corrugations, and power integrated device having surface corrugations
#1843Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
#1844Enhancement-mode HFET circuit arrangement having high power and high threshold voltage
#1845Semiconductor device
#1846High voltage channel diode
#1847Process of forming an electronic device including a trench and a conductive structure therein
#1848Method and layout of semiconductor device with reduced parasitics
#1849Semiconductor device
#1850Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same
#1851Bottom anode schottky diode structure and method
#1852Lateral MOS power transistor having backside terminal electrode
#1853SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1854IGFET device having an RF capability
#1855Laterally diffused metal-oxide-semiconductor device
#1856Power semiconductor device
#1857TFET with nanowire source
#1858Transistor structure with feed-through source-to-substrate contact
#1859Methods of fabricating normally-off semiconductor devices
#1860LDMOS transistors with a split gate
#1861Power semiconductor device
#1862Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same
#1863Transistor having thermo electron cooling
#1864Semiconductor device manufacturing method
#1865SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND POWER SUPPLY DEVICE
#1866Charge Balance Techniques for Power Devices
#1867RF CMOS transistor design
#1868Dual Gate LDMOS Device with Reduced Capacitance
#1869LDMOS Device with P-Body for Reduced Capacitance
#1870Terminal structure for superjunction device and method of manufacturing the same
#1871SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1872Semiconductor device
#1873Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same
#1874Semiconductor power device layout for stress reduction
#1875Power semiconductor device
#1876Devices containing permanent charge
#1877Semiconductor device
#1878Method for fabricating a shielded gate trench MOS with improved source pickup layout
#1879Robust transistors with fluorine treatment
#1880Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor
#1881Method of manufacturing high electron mobility transistor
#1882CURRENT SENSOR FOR A SEMICONDUCTOR DEVICE AND SYSTEM
#1883Reverse block-type insulated gate bipolar transistor manufacturing method
#1884Semiconductor device and a method of manufacturing the same
#1885Corner layout for superjunction device
#1886Semiconductor device and manufacturing method of the same
#1887SiC semiconductor device having Schottky barrier diode and method for manufacturing the same
#1888Transistor and method for fabricating the same
#1889Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
#1890Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same
#1891Method and apparatus of forming a gate
#1892Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same
#1893High-voltage transistor having shielding gate
#1894Electronic device including doped regions between channel and drain regions and a process of forming the same
#1895Semiconductor device and method for manufacturing semiconductor device
#1896SEMICONDUCTOR DEVICE
#1897Compound semiconductor device and manufacturing method thereof
#1898High voltage SCRMOS in BiCMOS process technologies
#1899Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#1900Method of forming trench-gate field effect transistors
#1901Switch mode converter employing dual gate MOS transistor
#1902Power MOSFET
#1903Wide bandgap HEMTS with source connected field plates
#1904Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#1905LDMOS with double LDD and trenched drain
#1906Stacked power converter structure and method
#1907SEMICONDUCTOR DEVICE
#1908High voltage devices and methods of forming the high voltage devices
#1909Integrated common source power MOSFET device, and manufacturing process thereof
#1910Lateral insulated gate bipolar transistor (LIGBT)
#1911Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
#1912Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
#1913DUAL WORK FUNCTION GATE STRUCTURES
#1914Method of manufacturing semiconductor device having high voltage ESD protective diode
#1915Semiconductor device and method for manufacturing the same
#1916Semiconductor apparatus
#1917Power semiconductor component with plate capacitor structure and edge termination
#1918Gated AlGaN/GaN heterojunction Schottky device
#1919Schottky barrier diode and method for manufacturing Schottky barrier diode
#1920FIELD-EFFECT TRANSISTOR
#1921Semiconductor apparatus and manufacturing method thereof
#1922SEMICONDUCTOR DEVICE
#1923Method to improve the reliability of the breakdown voltage in high voltage devices
#1924Bidirectional power switch controllable to be turned on and off
#1925LDMOS having a field plate
#1926Enhancement mode gallium nitride power devices
#1927SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1928MOS POWER TRANSISTOR
#1929Power semiconductor component with plate capacitor structure having an edge plate electrically connected to source or drain potential
#1930LDMOS with double LDD and trenched drain
#1931Normally off gallium nitride field effect transistors (FET)
#1932Bipolar transistor
#1933Electrostatic protection device
#1934Power device with improved edge termination
#1935Method and apparatus for controlling a circuit with a high voltage sense device
#1936HEMT device and a manufacturing of the HEMT device
#1937High breakdown voltage semiconductor device having a resurf layer
#1938Trench Schottky rectifier device and method for manufacturing the same
#1939Method of manufacturing a semiconductor device having vertical MOSFET
#1940Semiconductor device and manufacturing method thereof
#1941Semiconductor device
#1942SEMICONDUCTOR DEVICE WITH DUMMY GATE ELECTRODE AND CORRESPONDING INTEGRATED CIRCUIT AND MANUFACTURING METHOD
#1943High voltage devices, systems, and methods for forming the high voltage devices
#1944Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#1945Lateral metal oxide semiconductor drain extension design
#1946Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
#1947Configurable NP channel lateral drain extended MOS-based transistor
#1948LDMOS TRANSISTOR
#1949True CSP power MOSFET based on bottom-source LDMOS
#1950Electronic device including a trench and a conductive structure therein
#1951Semiconductor device
#1952SEMICONDUCTOR DEVICE
#1953Semiconductor device
#1954Semiconductor device and method for manufacturing of the same
#1955Semiconductor structure including a field modulation body and method for fabricating same
#1956Integrated Schottky diode in high voltage semiconductor device
#1957Semiconductor devices with field plates
#1958Transistor structure having a trench drain
#1959Trench-gated MIS devices
#1960High frequency field-effect transistor
#1961Semiconductor device including a MOSFET and a Schottky junction
#1962Method of removing a compound semiconductor layer from a compound semiconductor device
#1963Bipolar semiconductor device and manufacturing method
#1964Fabrication of single or multiple gate field plates
#1965High-voltage vertical transistor with edge termination structure
#1966Power semiconductor device and method for manufacturing same
#1967Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
#1968Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap
#1969Semiconductor device and manufacturing method of the same
#1970Semiconductor device and the method for manufacturing the same
#1971SEMICONDUCTOR DEVICE
#1972Integrated power supplies and combined high-side plus low-side switches
#1973Semiconductor device including field effect transistor with reduced electric field concentration
#1974Power semiconductor devices having termination structures
#1975Process of forming an electronic device including an integrated circuit with transistors coupled to each other
#1976Transistor with enhanced channel charge inducing material layer and threshold voltage control
#1977High voltage power integrated circuit
#1978High-voltage semiconductor device
#1979Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
#1980Nitride semiconductor device
#1981Semiconductor device
#1982Nanotube semiconductor devices
#1983THIN FILM DEVICE, FLEXIBLE CIRCUIT BOARD INCLUDING THIN FILM DEVICE, AND METHOD FOR MANUFACTURING THIN FILM DEVICE
#1984Field-effect transistor
#1985Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#1986Semiconductor device driving bridge-connected power transistor
#1987Semiconductor device
#1988Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
#1989Semiconductor device and method of manufacturing the same
#1990High breakdown voltage semiconductor device and high voltage integrated circuit
#1991SEMICONDUCTOR DEVICE
#1992Semiconductor including lateral HEMT
#1993Trench-gate field effect transistor with channel enhancement region and methods of forming the same
#1994Enhancement mode GaN HEMT device and method for fabricating the same
#1995Semiconductor component including a lateral transistor component
#1996Semiconductor device including a guard ring or an inverted region
#1997Semiconductor device and method for manufacturing the same
#1998Bottom-drain LDMOS power MOSFET structure having a top drain strap
#1999MSD integrated circuits with shallow trench
#2000LDMOS with double LDD and trenched drain
#2001Integrated low leakage Schottky diode
#2002Method and Apparatus for Over-voltage Protection With Breakdown-Voltage Tracking Sense Element
#2003Semiconductor device
#2004Method of forming a low resistance semiconductor contact and structure therefor
#2005Power device structures and methods
#2006MOS-gated power devices, methods, and integrated circuits
#2007HIGH VOLTAGE SEMICONDUCTOR DEVICE
#2008Component arrangement including a MOS transistor having a field electrode
#2009Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption
#2010III-nitride devices and circuits
#2011Semiconductor device having a junction of P type pillar region and N type pillar region
#2012Method of fabricating a high performance power MOS
#2013Semiconductor device
#2014SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2015Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
#2016Semiconductor device
#2017True CSP power MOSFET based on bottom-source LDMOS
#2018Power device with monolithically integrated RC snubber
#2019Structure and method for fabrication of field effect transistor gates with or without field plates
#2020Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
#2021Stacked power converter structure and method
#2022Semiconductor device with staggered oxide-filled trenches at edge region
#2023Lateral MOSFET with substrate drain connection
#2024Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETS, structure and method
#2025Co-packaging approach for power converters based on planar devices, structure and method
#2026Semiconductor device
#2027Process of forming an electronic device including a trench and a conductive structure therein
#2028Power MOSFET device structure for high frequency applications
#2029Electronic device including a trench and a conductive structure therein
#2030Electronic device including an insulating layer having different thicknesses and a conductive electrode and a process of forming the same
#2031Semiconductor devices and systems
#2032SEMICONDUCTOR DEVICE
#2033Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2034Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2035Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2036Trench-based power semiconductor devices with increased breakdown voltage characteristics
#2037Power semiconductor device with low on-state voltage and method of manufacturing the same
#2038Bottom anode Schottky diode structure
#2039Semiconductor component and method of manufacture
#2040Vertical type power semiconductor device having a super junction structure
#2041Method and apparatus for controlling a circuit with a high voltage sense device
#2042Semiconductor device and method of producing the same
#2043High-voltage vertical transistor with a multi-gradient drain doping profile
#2044LDMOS transistor having elevated field oxide bumps and method of making same
#2045Method for providing a self-aligned conductive structure
#2046Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same
#2047ZNO-Based Semiconductor Element
#2048Transistor structure having reduced input capacitance
#2049High-voltage transistor with high current load capacity and method for its production
#2050Transistor structure having an active region and a dielectric platform region
#2051Transistor structure having a conductive layer formed contiguous in a single deposition
#2052Transistor structure having a trench drain
#2053Methods for manufacturing trench MOSFET with implanted drift region
#2054Semiconductor device and method of manufacturing the same
#2055Power semiconductor devices and methods of manufacture
#2056Devices containing permanent charge
#2057SEMICONDUCTOR DEVICE
#2058Vertical MOS transistor and method therefor
#2059Semiconductor device having metal oxide film
#2060SOI device with more immunity from substrate voltage
#2061Varactor diode with doped voltage blocking layer
#2062System and method for I/O ESD protection with polysilicon regions fabricated by processes for making core transistors
#2063Semiconductor device and manufacturing method for semiconductor device
#2064Schottky barrier diode
#2065Method of forming a semiconductor structure
#2066Semiconductor device with a charge carrier compensation structure and process
#2067Semiconductor device and manufacturing method
#2068Robust transistors with fluorine treatment
#2069Trenched MOSFET with guard ring and channel stop
#2070Semiconductor devices with a field shaping region
#2071Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure
#2072Integration of high voltage JFET in linear bipolar CMOS process
#2073Semiconductor integrated circuit device and a manufacturing method for the same
#2074Dual gate LDMOS devices
#2075SEMICONDUCTOR DEVICE
#2076Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications
#2077Method of forming a low capacitance semiconductor device and structure therefor
#2078Field-effect transistor
#2079Normally-off semiconductor devices
#2080Charge balance techniques for power devices
#2081Semiconductor device with high-voltage breakdown protection
#2082High voltage semiconductor device including field shaping layer and method of fabricating the same
#2083High-voltage transistor with improved high stride performance
#2084Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices
#2085Trench MOSFET with shallow trench structures
#2086Structure for Preventing Leakage of a Semiconductor Device
#2087SEMICONDUCTOR DEVICE
#2088Rugged semiconductor device architecture
#2089Semiconductor device
#2090Semiconductor device and method of forming high voltage SOI lateral double diffused MOSFET with shallow trench insulator
#2091LDMOS device and method for manufacturing the same
#2092High voltage LDMOS transistor
#2093Trench-gate LDMOS structures
#2094MOSFET DEVICE HAVING DUAL INTERLEVEL DIELECTRIC THICKNESS AND METHOD OF MAKING SAME
#2095TRENCHED MOSFET WITH GUARD RING AND CHANNEL STOP
#2096Integrated low leakage schottky diode
#2097Bottom source LDMOSFET method
#2098Semiconductor structure having a unidirectional and a bidirectional device and method of manufacture
#2099RF power transistor structure and a method of forming the same
#2100Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric