208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Dual trench rectifier and method for forming the same
#1502Normally on high voltage switch
#1503Trench transistor device
#1504Termination design for high voltage device
#1505Semiconductor device and integrated circuit
#1506Method for manufacturing silicon carbide semiconductor device
#1507Method for forming semiconductor components having self-aligned trench contacts
#1508Power semiconductor device with embedded field electrodes
#1509Method for manufacturing semiconductor device
#1510JFET and method of manufacturing thereof
#1511Electronic device including a trench and a conductive structure therein
#1512Semiconductor device having buried channel array
#1513Enhancement-mode III-nitride devices
#1514BIPOLAR TRANSISTOR DEVICE AND METHOD OF FABRICATION
#1515Semiconductor device with trench termination structure
#1516Method and apparatus for MOS device with doped region
#1517Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
#1518Nitride-based semiconductor device and method of manufacturing the same
#1519High voltage trench transistor
#1520Schottky barrier diode
#1521Semiconductor device and manufacturing method of the same
#1522SEMICONDUCTOR DEVICE
#1523Compliant bipolar micro device transfer head with silicon electrodes
#1524Semiconductor device having a field-effect structure and a nitrogen concentration profile
#1525Semiconductor device and insulated gate bipolar transistor with barrier structure
#1526Method of manufacturing a multi-channel HEMT
#1527TRENCH MOSFET WITH SELF-ALIGNED SOURCE AND CONTACT REGIONS USING THREE MASKS PROCESS
#1528Vertical power MOSFET having planar channel and its method of fabrication
#1529Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel
#1530Floating guard ring for HV interconnect
#1531Semiconductor device with self-aligned contact plugs
#1532Vertical transistor component
#1533MOS-gated power devices, methods, and integrated circuits
#1534Trench transistors and methods with low-voltage-drop shunt to body diode
#1535Vertical DMOS transistor
#1536Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
#1537Method of manufacturing a semiconductor device having a buried field plate
#1538Semiconductor device and method for fabricating the same
#1539Edge termination configurations for high voltage semiconductor power devices
#1540Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1541Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
#1542Semiconductor device
#1543Trench MOSFET having an independent coupled element in a trench
#1544Shielded gate trench MOS with improved source pickup layout
#1545Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1546Method of forming integrated circuit having modified isolation structure
#1547MOSFET termination trench
#1548Semiconductor device and method for fabricating the same
#1549Semiconductor devices with field plates
#1550Super junction with an angled trench, transistor having the super junction and method of making the same
#1551Method for manufacturing a semiconductor device and a semiconductor device
#1552SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1553Self aligned trench MOSFET with integrated diode
#1554Semiconductor device
#1555Vertical transistor device structure with cylindrically-shaped regions
#1556Semiconductor device
#1557Trench MOS PN junction diode structure
#1558Nitride-based transistors having structures for suppressing leakage current
#1559METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
#1560Termination design by metal strapping guard ring trenches shorted to a body region to shrink termination area
#1561Semiconductor device with recombination region
#1562Dual trench structure
#1563Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#1564Semiconductor device and integrated circuit
#1565Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
#1566High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#1567Oxide terminated trench MOSFET with three or four masks
#1568Semiconductor device, integrated circuit and method of forming a semiconductor device
#1569Transistor component
#1570Stress-reduced field-effect semiconductor device and method for forming therefor
#1571Field effect transistor, termination structure and associated method for manufacturing
#1572Semiconductor device having polysilicon plugs with silicide crystallites
#1573Gallium nitride field effect transistor with buried field plate protected lateral channel
#1574Semiconductor device and manufacturing method thereof
#1575FinFET with trench field plate
#1576BURIED FIELD RING FIELD EFFECT TRANSISTOR (BUF-FET) INTEGRATED WITH CELLS IMPLANTED WITH HOLE SUPPLY PATH
#1577Superjunction device and semiconductor structure comprising the same
#1578Field effect semiconductor component and method for producing it
#1579Semiconductor device having a minimized region of sheild electrode and gate electrode overlap
#1580Integrated circuit and method of manufacturing an integrated circuit
#1581Spacer supported lateral channel FET
#1582Semiconductor device and the method of manufacturing the same
#1583Method of operating a reverse conducting IGBT
#1584Power semiconductor devices, structures, and related methods
#1585Power MOSFET and methods for forming the same
#1586Semiconductor device
#1587Semiconductor device and method of manufacturing the same
#1588Dual gate oxide trench MOSFET with channel stop trench
#1589Die Seal Layout for VFTL Dual Damascene in a Semiconductor Device
#1590Semiconductor device
#1591Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a reduced surface field effect trench structure
#1592Method of manufacturing semiconductor device
#1593Method of manufacturing a termination arrangement for a vertical MOSFET
#1594Semiconductor device and method of manufacturing the same
#1595Electrode contact structure for semiconductor device
#1596Semiconductor element and method for producing the same
#1597Lateral PNP bipolar transistor formed with multiple epitaxial layers
#1598Power semiconductor package with gate and field electrode leads
#1599Process method and structure for high voltage MOSFETS
#1600Semiconductor device including a MOSFET
#1601Semiconductor device with enhanced mobility and method
#1602Semiconductor device
#1603Semiconductor chip with integrated series resistances
#1604Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing
#1605Trench power MOSFET
#1606Junction-less insulated gate current limiter device
#1607Semiconductor device, electronic circuit and method for switching high voltages
#1608Power semiconductor device and method
#1609Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
#1610Semiconductor device having switching element and free wheel diode and method for controlling the same
#1611Vertical channel transistor with self-aligned gate electrode and method for fabricating the same
#1612Semiconductor device including a control circuit
#1613Semiconductor component with dynamic behavior
#1614Semiconductor component having a transition region
#1615Insulated gate semiconductor device structure
#1616Semiconductor device and method for manufacturing same
#1617Semiconductor device
#1618Semiconductor device and manufacturing method of the same
#1619Normally on high voltage switch
#1620Semiconductor device and method for fabricating the same
#1621TRENCH GATE MOSFET
#1622Trench gate MOSFET
#1623Semiconductor device
#1624Semiconductor component arrangement comprising a trench transistor
#1625Trench MOSFET with integrated Schottky barrier diode
#1626Semiconductor device with termination region having floating electrodes in an insulating layer
#1627Power semiconductor device with contiguous gate trenches and offset source trenches
#1628Structure of a trench MOS rectifier and method of forming the same
#1629Method of manufacturing a semiconductor device
#1630Recessed field plate transistor structures
#1631Semiconductor device
#1632Method for producing a semiconductor component
#1633Field effect transistor, termination structure and associated method for manufacturing
#1634Semiconductor device with charge compensation
#1635Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
#1636Semiconductor device with a field plate trench having a thick bottom dielectric
#1637Semiconductor device with a field plate double trench having a thick bottom dielectric
#1638Semiconductor structure and method for manufacturing the same
#1639Semiconductor device
#1640Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
#1641Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuit
#1642Semiconductor device having a high breakdown voltage
#1643Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#1644Power transistor with at least partially integrated driver stage
#1645Semiconductor device
#1646Die seal layout for VFTL dual damascene in a semiconductor device
#1647Transistor and method of manufacturing the same
#1648Bipolar transistor having laterally extending collector
#1649Semiconductor component having a semiconductor body with a cutout
#1650Semiconductor device including a gate trench and a source trench
#1651Semiconductor device comprising trench gate and buried source electrodes
#1652Method of fabricating semiconductor device having grooved source contact region
#1653Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
#1654Semiconductor device having planar source electrode
#1655Semiconductor device
#1656Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof
#1657Semiconductor device with field plate
#1658Semiconductor device
#1659Semiconductor device and method for manufacturing same
#1660Semiconductor device
#1661Field plate trench transistor and method for producing it
#1662Semiconductor device
#1663Semiconductor device with diode
#1664High-voltage semiconductor device
#1665Electronic circuit having adjustable transistor device
#1666Accumulation-mode field effect transistor with improved current capability
#1667Shielded gate trench MOSFET package
#1668Termination region of a semiconductor device
#1669Method of forming a transistor and structure therefor
#1670Semiconductor device
#1671Schottky and MOSFET+Schottky structures, devices, and methods
#1672Trench gated power device with multiple trench width and its fabrication process
#1673Method for forming a power semiconductor device
#1674Transistors with isolation regions
#1675Diode and semiconductor device including built-in diode
#1676Semiconductor structure and method for manufacturing the same
#1677Semiconductor device employing trenches for active gate and isolation
#1678Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates
#1679Vertical MOSFET transistor with a vertical capacitor region
#1680Recessed access devices and gate electrodes
#1681MOSFET with curved trench feature coupling termination trench to active trench
#1682Semiconductor device
#1683Method for manufacturing semiconductor device
#1684Semiconductor device including an edge area and method of manufacturing a semiconductor device
#1685Compliant bipolar micro device transfer head with silicon electrodes
#1686Power MOSFETs with improved efficiency for multi-channel class D audio amplifiers and packaging therefor
#1687LDMOS power semiconductor device and manufacturing method of the same
#1688Trench shielding structure for semiconductor device and method
#1689Semiconductor device and manufacturing method of the same
#1690Termination design for high voltage device
#1691Power semiconductor device
#1692Deposit/etch for tapered oxide
#1693Adaptive charge balanced MOSFET techniques
#1694Semiconductor device having field plate electrode and method for manufacturing the same
#1695High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#1696Trench FET having merged gate dielectric
#1697Semiconductor device
#1698Semiconductor device
#1699Semiconductor device
#1700Semiconductor device and method of manufacturing a semiconductor device
#1701Trench power field effect transistor device and method
#1702Electronic device including a trench and a conductive structure therein
#1703Semiconductor device with an edge termination structure having a closed vertical trench
#1704Electronic device comprising a conductive structure and an insulating layer within a trench
#1705Oxide terminated trench MOSFET with three or four masks
#1706Integrated power device on a semiconductor substrate having an improved trench gate structure
#1707Fabrication of shielded gate trench MOSFET with increased source-metal contact
#1708Insulated gate bipolar transistor
#1709Insulated gate bipolar transistor
#1710MOS-gated power devices, methods, and integrated circuits
#1711Semiconductor device and method for manufacturing a semiconductor device
#1712Methods for manufacturing a semiconductor device
#1713Method for forming a semiconductor device with a trench and an isolation
#1714Rectifier circuit with a voltage sensor
#1715Semiconductor device
#1716Semiconductor transistor device and method for manufacturing same
#1717Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge
#1718Semiconductor device
#1719Semiconductor structure
#1720Memory devices including graphene switching devices
#1721MOSFET device and fabrication
#1722Semiconductor device with field-plate electrode
#1723MOS transistor structure
#1724Semiconductor device and method for manufacturing a semiconductor device
#1725Transistor device with field electrode
#1726Trench MOSFET having an independent coupled element in a trench
#1727Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process
#1728Breakdown voltage blocking device
#1729Semiconductor device and manufacturing method of the same
#1730Chip edge sealing
#1731Semiconductor device
#1732Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#1733Method for producing a controllable semiconductor component
#1734Method for manufacturing silicon carbide semiconductor device
#1735Method for fabricating a trench structure, and a semiconductor arrangement comprising a trench structure
#1736Method for forming a schottky barrier diode integrated with a trench MOSFET
#1737Method for protecting a semiconductor device against degradation and a method for manufacturing a semiconductor device protected against hot charge carriers
#1738Power semiconductor device
#1739Diode having trenches in a semiconductor region
#1740MOS transistor
#1741Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#1742Semiconductor device with field electrode and method
#1743Semiconductor device and fabricating method thereof
#1744Devices, components and methods combining trench field plates with immobile electrostatic charge
#1745Power semiconductor devices, structures, and related methods
#1746Bidirectional field effect transistor and method
#1747Compliant bipolar micro device transfer head
#1748Semiconductor device comprising contact trenches
#1749Trench connection between a transistor and a further component
#1750Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1751Diode, semiconductor device, and MOSFET
#1752Self aligned trench MOSFET with integrated diode
#1753FORMING A TAPERED OXIDE FROM A THICK OXIDE LAYER
#1754Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1755Trench transistors and methods with low-voltage-drop shunt to body diode
#1756Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1757Lateral transistors with low-voltage-drop shunt to body diode
#1758Radio frequency isolation for SOI transistors
#1759Deposit/etch for tapered oxide
#1760High voltage field balance metal oxide field effect transistor (FBM)
#1761Termination design for high voltage device
#1762Corner layout for high voltage semiconductor devices
#1763Semiconductor device including a dielectric structure in a trench
#1764High electron mobility transistor and method of manufacturing the same
#1765FinFET with trench field plate
#1766Apparatus and method for power MOS transistor
#1767Semiconductor device and the method of manufacturing the same
#1768Trench gate MOSFET
#1769Metal/polysilicon gate trench power mosfet
#1770Semiconductor device
#1771Solid-state bidirectional switch having a first and a second power-FET
#1772Charge compensation semiconductor device
#1773Group III nitride semiconductor device, production method therefor, and power converter
#1774Semiconductor device
#1775Semiconductor component with a drift region and a drift control region
#1776Semiconductor Device and Method for Producing a Doped Semiconductor Layer
#1777TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
#1778Reverse Conducting IGBT
#1779Semiconductor device with an edge termination structure
#1780High voltage trench transistor
#1781Semiconductor device and fabricating method thereof
#1782Multi-channel HEMT
#1783Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device
#1784Split trench-gate MOSFET with integrated Schottky diode
#1785Semiconductor device
#1786Method of making an insulated gate semiconductor device and structure
#1787Semiconductor component and method for producing a semiconductor component
#1788High-voltage monolithic schottky device structure
#1789Power MOSFET and methods for forming the same
#1790Trench power MOSFET
#1791Vertical channel transistor with self-aligned gate electrode and method for fabricating the same
#1792Semiconductor device and method of forming junction enhanced trench power MOSFET
#1793Termination arrangement for vertical MOSFET
#1794Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plate
#1795Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
#1796Schottky barrier diode having a trench structure
#1797Vertical transistor component
#1798Methods of manufacturing trench semiconductor devices with edge termination structures
#1799Semiconductor Devices Including Superjunction Structure and Method of Manufacturing
#1800Method of making an insulated gate semiconductor device having a shield electrode structure