208315 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Electrodes ; Multistep manufacturing processes therefor; Field plates Recessed field plates, e.g. trench field plates, buried field plates
Method of making an electrode contact structure and structure therefor
#1802Trench power MOSFET and fabrication method thereof
#1803Nitride semiconductor device
#1804Semiconductor structure and method for manufacturing the same
#1805SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1806Semiconductor component and method for producing it
#1807Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device
#1808Compound semiconductor device with embedded electrode controlling a potential of the buffer layer
#1809TRENCH MOSFET WITH SHIELDED ELECTRODE AND AVALANCHE ENHANCEMENT REGION
#1810Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body
#1811Wide trench termination structure for semiconductor device
#1812POWER SEMICONDUCTOR DEVICE
#1813Stress-reduced field-effect semiconductor device and method for forming therefor
#1814Electronic device including a trench and a conductive structure therein having a contact within a Schottky region and a process of forming the same
#1815Trench-gate field effect transistor
#1816SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1817Power MOSFET
#1818Semiconductor device with enhanced mobility and method
#1819Power semiconductor device
#1820Integrated power transistor circuit having a current-measuring cell
#1821Semiconductor field effect power switching device
#1822Semiconductor device including charged structure and methods for manufacturing a semiconductor device
#1823Semiconductor device including auxiliary structure and methods for manufacturing a semiconductor device
#1824Transistor and method of manufacturing the same
#1825Shielded gate MOSFET device with a funnel-shaped trench
#1826Charge compensation semiconductor device
#1827Semiconductor power device integrated with ESD protection diodes
#1828Method of forming a trench electrode device with wider and narrower regions
#1829Shielded gate trench MOS with improved source pickup layout
#1830Power MOSFET semiconductor
#1831Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS
#1832Semiconductor device and manufacturing method of semiconductor device
#1833SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1834Electronic device including a trench and a conductive structure therein and a process of forming the same
#1835Semiconductor device and method for producing same
#1836Trench junction field-effect transistor
#1837Process of forming an electronic device including a trench and a conductive structure therein
#1838Semiconductor device with improved robustness
#1839Semiconductor device
#1840Semiconductor structure and method of forming the same
#1841Semiconductor device including a MOSFET and Schottky junction
#1842Dual gate lateral MOSFET
#1843MOSFET termination trench
#1844Trench MOSFET having a top side drain
#1845Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#1846Medium voltage MOSFET device
#1847Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit
#1848Current measurement in a power transistor
#1849Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
#1850Switching element
#1851Semiconductor transistor having trench contacts and method for forming therefor
#1852Dual gate oxide trench MOSFET with channel stop trench
#1853Semiconductor diode and method for forming a semiconductor diode
#1854TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS
#1855Trench semiconductor power device having active cells under gate metal pad
#1856Semiconductor power device having improved termination structure for mask saving
#1857Trench MOSFET with resurf stepped oxide and diffused drift region
#1858Semiconductor power device having wide termination trench and self-aligned source regions for mask saving
#1859Semiconductor device with self-charging field electrodes and compensation regions
#1860SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1861Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same
#1862Compound semiconductor device with buried field plate
#1863Semiconductor device including a diode arranged in a trench
#1864Semiconductor device having isolation trenches
#1865Semiconductor device including first and second semiconductor elements
#1866Monolithic semiconductor switches and method for manufacturing
#1867Trench schottky diode and manufacturing method thereof
#1868Semiconductor device with field electrode
#1869Semiconductor device arrangement comprising a semiconductor device with a drift region and a drift control region
#1870SEMICONDUCTOR DEVICE FOR POWER AND METHOD OF MANUFACTURE THEREOF
#1871Trench Schottky diode and method for manufacturing the same
#1872Two-dimensional shielded gate transistor device and method of manufacture
#1873BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#1874Semiconductor devices having a recessed electrode structure
#1875Semiconductor power device integrated with improved gate source ESD clamp diodes
#1876Diode with controllable breakdown voltage
#1877Semiconductor device with self-charging field electrodes
#1878SEMICONDUCTOR DEVICE
#1879Semiconductor device with a semiconductor via and laterally connected electrode
#1880Semiconductor power devices integrated with a trenched clamp diode
#1881Semiconductor power device with embedded diodes and resistors using reduced mask processes
#1882Trench MOSFET with integrated Schottky barrier diode
#1883Semiconductor device and method for manufacturing semiconductor device
#1884Lateral PNP bipolar transistor formed with multiple epitaxial layers
#1885Power transistor with controllable reverse diode
#1886SEMICONDUCTOR DEVICE
#1887Semiconductor device and manufacturing method of the same
#1888Semiconductor device and method for manufacturing same
#1889Semiconductor device and method for manufacturing same
#1890Power semiconductor device
#1891SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1892Trenched power semiconductor device and fabrication method thereof
#1893SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1894TRENCH SEMICONDUCTOR POWER DEVICE AND FABRICATION METHOD THEREOF
#1895Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path
#1896Shielded gate trench MOSFET package
#1897Method for manufacturing a semiconductor device
#1898Method of forming a semiconductor power switching device, structure therefor, and power converter
#1899Semiconductor device and a method for forming a semiconductor device
#1900Semiconductor device
#1901Vertical transistor with improved robustness
#1902Termination of high voltage (HV) devices with new configurations and methods
#1903Semiconductor device and electric power conversion system using the same
#1904Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures
#1905High voltage bipolar transistor with trench field plate
#1906Charge balance semiconductor devices with increased mobility structures
#1907METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER
#1908Method for producing a semiconductor device including a dielectric layer
#1909METHOD OF MANUFACTURING TRENCH MOSFET USING THREE MASKS PROCESS HAVING TILT- ANGLE SOURCE IMPLANTS
#1910Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#1911HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE WITH AN INSULATED GATE FORMED IN A TRENCH, AND MANUFACTURING PROCESS THEREOF
#1912Semiconductor device having a floating semiconductor zone
#1913Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
#1914Trench transistor and manufacturing method of the trench transistor
#1915Method of making an insulated gate semiconductor device and structure
#1916Semiconductor device and manufacturing method
#1917Fabrication method of trenched power semiconductor device with source trench
#1918METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
#1919Trench gated power device with multiple trench width and its fabrication process
#1920Field effect transistor and schottky diode structures
#1921Split-gate structure in trench-based silicon carbide power device
#1922Method for producing contact openings in a semiconductor body and self-aligned contact structures on a semiconductor body
#1923Electronic circuit control element with tap element
#1924Semiconductor devices
#1925Semiconductor device with enhanced mobility and method
#1926SEMICONDUCTOR DIODE
#1927Semiconductor component and method for producing a semiconductor component
#1928Circuit configured to adjust the activation state of transistors based on load conditions
#1929Edge termination configurations for high voltage semiconductor power devices
#1930Junction barrier Schottky (JBS) with floating islands
#1931Semiconductor power device
#1932Transistor with controllable compensation regions
#1933Transistor with controllable compensation regions
#1934Trenched power semiconductor device and fabrication method thereof
#1935Semiconductor device having reduced gate charges and superior figure of merit
#1936High switching trench MOSFET
#1937Fabrication of trench DMOS device having thick bottom shielding oxide
#1938Power semiconductor device and a method for forming a semiconductor device
#1939Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates
#1940Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode
#1941Gate pullback at ends of high-voltage vertical transistor structure
#1942Shielded gate trench FET with multiple channels
#1943Integrating Schottky diode into power MOSFET
#1944STRUCTURES AND METHODS FOR REDUCING DOPANT OUT-DIFFUSION FROM IMPLANT REGIONS IN POWER DEVICES
#1945Method of forming an insulated gate field effect transistor device having a shield electrode structure
#1946Transistor arrangement with a MOSFET
#1947Wide and deep oxide trench in a semiconductor substrate with interspersed vertical oxide ribs
#1948Rectifier with vertical MOS structure
#1949Double-Trench Vertical Devices and Methods with Self-Alignment Between Gate and Body Contact
#1950Trench MOSFET with trenched floating gates and trenched channel stop gates in termination
#1951Structure and fabrication process of super junction MOSFET
#1952Semiconductor device
#1953TRENCH-GATE LDMOS STRUCTURES
#1954Semiconductor device
#1955LDMOS DEVICE AND METHOD FOR MAKING THE SAME
#1956Semiconductor device and manufacturing method of the same
#1957Semiconductor device and manufacturing method of the same
#1958Semiconductor device and method for manufacturing same
#1959Schottky barrier diode and MOSFET semiconductor device
#1960Semiconductor transistor device and method for manufacturing same
#1961SEMICONDUCTOR DEVICE
#1962Semiconductor device and method for manufacturing same
#1963SEMICONDUCTOR DEVICE
#1964SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1965Semiconductor structure
#1966Inter-poly dielectric in a shielded gate MOSFET device
#1967Method of forming semiconductor structure
#1968METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
#1969Methods related to power semiconductor devices with thick bottom oxide layers
#1970Method for manufacturing an integrated power device having gate structures within trenches
#1971Semiconductor device with improved on-resistance
#1972SEMICONDUCTOR DEVICE
#1973Semiconductor field effect power switching device
#1974Anchoring structure and intermeshing structure
#1975Multi-level lateral floating coupled capacitor transistor structures
#1976Trench MOSFET with trenched floating gates in termination
#1977HYBRID SPLIT GATE SEMICONDUCTOR
#1978Trench schottky diode and manufacturing method thereof
#1979Shielded gate trench MOSFET device and fabrication
#1980Semiconductor device
#1981Trench MOS barrier schottky (TMBS) having multiple floating gates
#1982SEMICONDUCTOR DEVICE HAVING FIELD PLATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME
#1983Trench MOSFET with ultra high cell density and manufacture thereof
#1984Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal Substrate
#1985Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1986Polysilicon control etch back indicator
#1987Vertical trench LDMOS transistor
#1988Super-junction trench MOSFET with multiple trenched source-body contacts
#1989Trench power MOSFET with reduced on-resistance
#1990Edge termination with improved breakdown voltage
#1991Method for manufacturing a semiconductor device
#1992Methods for manufacturing superjunction semiconductor device having a dielectric termination
#1993Method for forming accumulation-mode field effect transistor with improved current capability
#1994TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS AND SELF-ALIGNED TRENCHED CONTACT
#1995Single structure cascode device
#1996Rectifier circuit with a voltage sensor
#1997Latch-up free vertical TVS diode array structure using trench isolation
#1998VERTICAL TRANSISTOR MANUFACTURING METHOD AND VERTICAL TRANSISTOR
#1999Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
#2000Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates
#2001Semiconductor device comprising an isolation trench including semiconductor islands
#2002High efficiency rectifier
#2003METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE
#2004Transistors with isolation regions
#2005Semiconductor component with a space saving edge structure
#2006Electronic circuit control element with tap element
#2007High-voltage semiconductor device with lateral series capacitive structure
#2008Method and a structure for enhancing electrical insulation and dynamic performance of MIS structures comprising vertical field plates
#2009Method for producing a semiconductor component with insulated semiconductor mesas
#2010Self aligned trench MOSFET with integrated diode
#2011High aspect ratio trench structures with void-free fill material
#2012Lateral power diode with self-biasing electrode
#2013Oxide terminated trench MOSFET with three or four masks
#2014Semiconductor component with high breakthrough tension and low forward resistance
#2015SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#2016Semiconductor device
#2017Semiconductor device having plurality of peripheral trenches in peripheral region around cell region
#2018Lateral superjunction extended drain MOS transistor
#2019Structure and method for forming trench-gate field effect transistor with source plug
#2020Integrated circuit technology with different device epitaxial layers
#2021Semiconductor structure with a planar Schottky contact
#2022Direct contact in trench with three-mask shield gate process
#2023Trench device structure and fabrication
#2024Power semiconductor devices, structures, and related methods
#2025METHOD FOR INSULATING A SEMICONDUCTOR MATERIAL IN A TRENCH FROM A SUBSTRATE
#2026Lateral Floating Coupled Capacitor Device Termination Structures
#2027POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#2028Semiconductor device with (110)-oriented silicon
#2029Method for producing an electrode structure
#2030Method for producing a gate electrode structure
#2031SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2032TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS
#2033Super-junction trench MOSFET with resurf stepped oxides and trenched contacts
#2034Method for producing a structure element and semiconductor component comprising a structure element
#2035Power semiconductor device
#2036Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts
#2037Checkerboarded high-voltage vertical transistor layout
#2038Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes
#2039Semiconductor device
#2040Recessed memory cell access devices and gate electrodes
#2041SEMICONDUCTOR DEVICE
#2042Control device of semiconductor device
#2043VTS insulated gate bipolar transistor
#2044Method of forming shielded gate power transistor utilizing chemical mechanical planarization
#2045Semiconductor device
#2046Depletion MOS transistor and charging arrangement
#2047Semiconductor device
#2048SEMICONDUCTOR DEVICE
#2049SEMICONDUCTOR DEVICE
#2050Method of manufacturing semiconductor device, and semiconductor device
#2051Power MOSFET and its edge termination
#2052Semiconductor device
#2053Method and device including transistor component having a field electrode
#2054FABRICATION METHOD OF INTEGRATING POWER TRANSISTOR AND SCHOTTKY DIODE ON A MONOLITHIC SUBSTRATE
#2055Reduced process sensitivity of electrode-semiconductor rectifiers
#2056Edge termination region of a semiconductor device
#2057Method for producing an insulation layer between two electrodes
#2058Trench MOSFET having floating dummy cells for avalanche improvement
#2059Electronic device with connecting structure
#2060Semiconductor device structures and related processes
#2061Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
#2062Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates
#2063Semiconductor device having switching element and free wheel diode and method for controlling the same
#2064Semiconductor device
#2065Trench semiconductor device and method of manufacturing
#2066Semiconductor device
#2067Method of manufacturing trench MOSFET structures using three masks process
#2068Ultra-low-cost three mask layers trench MOSFET and method of manufacture
#2069Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor
#2070Device structure and manufacturing method using HDP deposited using deposited source-body implant block
#2071Method of fabricating a high-voltage transistor with an extended drain structure
#2072Semiconductor device
#2073Vertical transistor component
#2074SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2075High-voltage bipolar transistor with trench field plate
#2076Etch depth determination structure
#2077METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2078Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
#2079Methods of manufacturing power semiconductor devices with shield and gate contacts
#2080Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
#2081Semiconductor device including cell region and peripheral region having high breakdown voltage structure
#2082Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction
#2083SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING
#2084Field effect transistor with gated and non-gated trenches
#2085Semiconductor device and the method of manufacturing the same
#2086Semiconductor device structures and related processes
#2087Power semiconductor device with trench bottom polysilicon and fabrication method thereof
#2088Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#2089Semiconductor device having an edge termination structure and method of manufacture thereof
#2090FIELD EFFECT TRANSISTOR WITH TRENCH FILLED WITH INSULATING MATERIAL AND STRIPS OF SEMI-INSULATING MATERIAL ALONG TRENCH SIDEWALLS
#2091Low Qgd trench MOSFET integrated with schottky rectifier
#2092Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture
#2093Method of making vertical transistor with graded field plate dielectric
#2094Shield contacts in a shielded gate MOSFET
#2095Power MOSFET semiconductor device
#2096Semiconductor component and method of manufacture
#2097METHOD FOR FORMING POWER DEVICES WITH CARBON-CONTAINING REGION
#2098Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same
#2099Power MOSFET with embedded recessed field plate and methods of fabrication
#2100Shielded trench MOSFET with multiple trenched floating gates as termination