H01L29/66121 - CPC Classification Index

ClassID:

208383 ⎘

H01L29/66121 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices; Diodes Multilayer diodes, e.g. PNPN diodes

Recent Application in this class:

20240355937

2024-10-24

DIODE AND METHOD OF MAKING THE SAME

20240290838

2024-08-29

Semiconductor Structure and Method of Fabricating the Same

20240113167

2024-04-04

Method of Fabricating a Semiconductor Structure

20240096872

2024-03-21

METHOD OF MAKING HIGH POWER TVS WITH ENHANCED REPETITIVE SURGE PERFORMANCE

20240072041

2024-02-29

Integration of Nanosheets with Bottom Dielectric Isolation and Ideal Diode

20230411535

2023-12-21

Silicon-controlled rectifiers for electrostatic discharge protection

20230411534

2023-12-21

Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof

20230299210

2023-09-21

Diode and method of making the same

20230238430

2023-07-27

Semiconductor structure and method of fabricating the same

#10

20230130632

2023-04-27

Electrostatic discharge protection devices for bi-directional current protection

#11

20230086715

2023-03-23

Stacked diode with side passivation and method of making the same

#12

20230027045

2023-01-26

Bi-directional bi-polar device for ESD protection

#13

20220223692

2022-07-14

Gallium nitride power device and manufacturing method thereof

#14

20210328076

2021-10-21

Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereof

#15

20210217746

2021-07-15

ESD protection

#16

20210118946

2021-04-22

Emissive display device comprising LEDs

#17

20210111021

2021-04-15

Method of forming a semiconductor device structure

#18

20200357897

2020-11-12

Edge cell signal line antenna diodes

#19

20200243680

2020-07-30

Semiconductor device having termination region with insulator films having different coefficients of moisture absorption

#20

20200058506

2020-02-20

Semiconductor device and manufacturing method thereof

#21

20190312150

2019-10-10

Semiconductor element, semiconductor device, and method for manufacturing same

#22

20190305140

2019-10-03

Semiconductor device having termination region with insulator having low coefficient of moisture absorption

#23

20190252409

2019-08-15

Semiconductor device

#24

20190148356

2019-05-16

Protection device and method for fabricating the protection device

#25

20190123145

2019-04-25

Semiconductor device

#26

20180190789

2018-07-05

Method and system for in-situ etch and regrowth in gallium nitride based devices

#27

20180190643

2018-07-05

Transient overvoltage protection device

#28

20180108648

2018-04-19

Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure

#29

20180097124

2018-04-05

Semiconductor device and method of forming the same

#30

20180061935

2018-03-01

Semiconductor device and semiconductor device manufacturing method

#31

20180040743

2018-02-08

Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers

#32

20180040725

2018-02-08

Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice

#33

20180040724

2018-02-08

Semiconductor device including resonant tunneling diode structure having a superlattice

#34

20180040714

2018-02-08

Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers

#35

20170352730

2017-12-07

Semiconductor device

#36

20170323981

2017-11-09

Semiconductor element, semiconductor device, and method for manufacturing same

#37

20170243894

2017-08-24

Reducing antenna effects in SOI devices

#38

20170222063

2017-08-03

Semiconductor structure and method for manufacturing the same

#39

20170194456

2017-07-06

Fabricating high-power devices

#40

20170162666

2017-06-08

Metal-semiconductor-metal (MSM) heterojunction diode

#41

20170117419

2017-04-27

COMPACT MEMORY STRUCTURE INCLUDING TUNNELING DIODE

#42

20170047515

2017-02-16

Tunable voltage margin access diodes

#43

20160365427

2016-12-15

Compound varactor

#44

20160315254

2016-10-27

Tunable voltage margin access diodes

#45

20160293591

2016-10-06

Transient overvoltage protection device

#46

20160284995

2016-09-29

Tunable voltage margin access diodes

#47

20160284870

2016-09-29

Tunable voltage margin access diodes

#48

20160284687

2016-09-29

Ultra high voltage electrostatic discharge protection device with current gain

#49

20160190276

2016-06-30

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICES

#50

20160181237

2016-06-23

Electrostatic discharge protection structure and fabrication method thereof

#51

20160133757

2016-05-12

Diode

#52

20160111414

2016-04-21

SCR with fin body regions for ESD protection

#53

20160099318

2016-04-07

Structure and method for transient voltage suppression devices with a two-region base

#54

20160079444

2016-03-17

Compound varactor

#55

20160043180

2016-02-11

Semiconductor device including high-voltage diode

#56

20160035881

2016-02-04

Semiconductor device including a super junction MOSFET

#57

20160005835

2016-01-07

Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer

#58

20150325674

2015-11-12

Methods of fabricating diodes with multiple junctions

#59

20150279961

2015-10-01

METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODE

#60

20150270131

2015-09-24

Method of manufacturing a vertical semiconductor device

#61

20150263181

2015-09-17

Compact memory structure including tunneling diode

#62

20150243757

2015-08-27

Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate

#63

20150200268

2015-07-16

Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back

#64

20150200088

2015-07-16

Fabrication method of semiconductor memory device

#65

20150187749

2015-07-02

Silicon-controlled rectifier electrostatic discharge protection device and method for forming the same

#66

20150137305

2015-05-21

Protective structure and method for producing a protective structure

#67

20150130032

2015-05-14

Ultra high voltage electrostatic discharge protection device with current gain

#68

20150123236

2015-05-07

Diodes with multiple junctions and fabrication methods therefor

#69

20150093886

2015-04-02

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

#70

20150076565

2015-03-19

Ultrahigh-voltage semiconductor structure and method for manufacturing the same

#71

20150061089

2015-03-05

Vertical semiconductor device and method of manufacturing thereof

#72

20150060939

2015-03-05

SCR with fin body regions for ESD protection

#73

20150050784

2015-02-19

Bi-directional silicon controlled rectifier structure

#74

20150048450

2015-02-19

Semiconductor device and method for manufacturing semiconductor device

#75

20140339601

2014-11-20

Dual-tub junction-isolated voltage clamp devices for protecting low voltage circuitry connected between high voltage interface pins and methods of forming the same

#76