208393 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
Sub-classes:VARACTOR COMPRISING HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL
#2PASSIVE ELEMENT AND ELECTRONIC DEVICE
#3RESISTOR STRUCTURE INCLUDING CHARGE CONTROL LAYER
#4Integrated resistor for semiconductor device
#5Integrated resistor for semiconductor device
#6Method for analyzing discrete traps in semiconductor devices
#7Compound semiconductor device and manufacturing method thereof
#8Semiconductor structure and method for making same
#9Semiconductor devices and methods of manufacture
#10Method of making wide tuning range and super low capacitance varactor diodes
#11Integration of vertical GaN varactor with HEMT