208394 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material Diodes
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
#3Semiconductor by-pass switch
#4Method for manufacturing nitride semiconductor device and nitride semiconductor device
#5Epitaxial wafer, method of manufacturing the epitaxial wafer, diode, and current rectifier
#6Stacked III-V semiconductor diode
#7FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
#8Integrated circuit devices with an engineered substrate
#9STACKED HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE
#10GaN-based threshold switching device and memory diode
#11Plasma-based edge terminations for gallium nitride power devices
#12Semiconductor device and power amplifier module
#13Method of forming a semiconductor device structure
#14Semiconductor chip contact structure, device assembly, and method of fabrication
#15Fabrication of lateral superjunction devices using selective epitaxy
#16Mapping and evaluating GaN wafers for vertical device applications
#17High power gallium nitride electronics using miscut substrates
#18Semiconductor device and power amplifier module
#19GaN-based threshold switching device and memory diode
#20Methods of manufacturing vertical semiconductor diodes using an engineered substrate
#21P-I-N diode and connected group III-N device and their methods of fabrication
#22Method for fabricating a semiconductor device and a semiconductor device
#23High power gallium nitride electronics using miscut substrates
#24III-V semiconductor diode
#25Electronic power devices integrated with an engineered substrate
#26Stacked III-V semiconductor component
#27Semiconductor device and power amplifier module
#28Stacked III-V semiconductor diode
#29Stacked III-V semiconductor component
#30Semiconductor device
#31Methods of forming a vertical semiconductor diode using an engineered substrate
#32SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#33Dual-series varactor EPI
#34Semiconductor device and power amplifier module
#35Tight integrated vertical transistor dual diode structure for electrostatic discharge circuit protector
#36Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
#37III-V semiconductor diode
#38III-V semiconductor diode
#39Semiconductor device
#40Electronic device using group III nitride semiconductor and its fabrication method
#41Electronic device using group III nitride semiconductor and its fabrication method
#42Electronic device using group III nitride semiconductor and its fabrication method
#43Electronic device using group III nitride semiconductor and its fabrication method
#44Semiconductor device including zener diode and method of manufacturing thereof
#45High power gallium nitride electronics using miscut substrates
#46III-V semiconductor diode
#47III-V semiconductor diode
#48Electronic power devices integrated with an engineered substrate
#49Vertical semiconductor diode manufactured with an engineered substrate
#50Top contact resistance measurement in vertical FETS
#51Manufacturing method of semiconductor device
#52Semiconductor device including insulating film that includes negatively charged microcrystal
#53Producing a semiconductor device by epitaxial growth
#54Fabricating high-power devices
#55HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
#56Reduction of defect induced leakage in III-V semiconductor devices
#57Dual-series varactor EPI
#58Manufacturing method for semiconductor device with point defect region doped with transition metal
#59Semiconductor device including an insulating layer which includes negatively charged microcrystal
#60Method of fabricating a GaN P-i-N diode using implantation
#61Method for manufacturing semiconductor device
#62High voltage gallium nitride based semiconductor device and manufacturing method of the same
#63III-nitride based ESD protection device
#64High voltage diode
#65Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
#66High power gallium nitride electronics using miscut substrates
#67Semiconductor device comprising a gate electrode connected to a source terminal
#68Method of fabricating a gallium nitride P-i-N diode using implantation
#69Method and system for junction termination in GaN materials using conductivity modulation
#70HEMT with compensation structure
#71Method for manufacturing nitride semiconductor device
#72High voltage diode
#73Power switching device and method of manufacturing the same
#74Semiconductor device with point defect region doped with transition metal
#75Method of manufacturing vertical pin diodes
#76Diode and method of manufacturing diode
#77Method and system for gallium nitride electronic devices using engineered substrates
#78Method of fabricating a GaN P-i-N diode using implantation
#79Method and system for junction termination in GaN materials using conductivity modulation
#80Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element
#81Schottky diode with buried layer in GaN materials
#82Method and system for floating guard rings in gallium nitride materials
#83HEMT with integrated low forward bias diode
#84Method and system for formation of P-N junctions in gallium nitride based electronics
#85Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
#86Systems and methods for forming isolated devices in a handle wafer
#87Semiconductor Junction Diode Device And Method For Manufacturing The Same
#88Method of manufacturing vertical pin diodes
#89Monolithic microwave integrated circuit device and method of forming the same
#90Method of manufacturing a semiconductor device
#91Method of forming a vertical diode and method of manufacturing a semiconductor device using the same
#92SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME
#93Process for producing a PN homojunction in a nanostructure
#94Method for manufacturing semiconductor apparatus
#95Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center
#96Method of forming a vertical diode and method of manufacturing a semiconductor device using the same
#97GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
#98Semiconductor devices and methods of manufacture
#99Method for implant and anneal for high voltage field effect transistors
#100Reduction of defect induced leakage in III-V semiconductor devices