208410 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices Unipolar field-effect transistors
Sub-classes:SEMICONDUCTOR DEVICE CAPABLE OF RELEASING PROCESS CHARGE, AND METHOD FOR MANUFACTURING THE SAME
#2INDUCTORLESS CIRCUITS FOR CURRENT-VOLTAGE CONTROL AND REGULATION IN GLASS CORE
#3SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
#4Semiconductor device with control electrodes provided in trenches of different widths
#5STACKED SEMICONDUCTOR CHIP STRUCTURE AND ITS PROCESS
#6Circuit structure
#7Heavily doped buried layer to reduce MOSFET off capacitance
#8MIM capacitor containing negative capacitance material
#9High-electron-mobility transistor and manufacturing method thereof
#10Manufacturing method for high-electron-mobility transistor
#11High-electron-mobility transistor and manufacturing method thereof
#12MIM capacitor formation in RMG module
#13Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
#14Nonplanar III-N transistors with compositionally graded semiconductor channels
#15Secure chip with physically unclonable function
#16Differential pair sensing circuit structures
#17Antifuse of semiconductor device and method of fabricating the same
#18METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
#19Nonplanar III-N transistors with compositionally graded semiconductor channels
#20STRUCTURE FOR IMPROVED CONTACT RESISTANCE AND EXTENSION DIFFUSION CONTROL
#21Deep gate-all-around semiconductor device having germanium or group III-V active layer
#22Nonplanar III-N transistors with compositionally graded semiconductor channels
#23Semiconductor devices with germanium-rich active layers and doped transition layers
#24Antifuse of semiconductor device and method of fabricating the same
#25MOSFET device
#26Reduced charge transistor
#27METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PATTERN, AND METHOD OF MANUFACTURING THE BIOSENSOR
#28Semiconductor device and method of manufacturing the same
#29SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME
#30Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor
#31ENCAPSULATING AND TRANSFERRING LOW DIMENSIONAL STRUCTURES
#32Method for fabricating Schottky barrier tunnel transistor
#33Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
#34SEMICONDUCTOR DEVICE
#35Dispersed growth of nanotubes on a substrate
#36Semiconductor device having local interconnection layer and etch stopper pattern for preventing leakage of current
#37Vertical carbon nanotube field effect transistors and arrays
#38Method for producing solid-state imaging device
#39MIM capacitor formation in RMG module