H01L29/66386 - CPC Classification Index

ClassID:

208407 ⎘

H01L29/66386 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Thyristors Bidirectional thyristors

Recent Application in this class:

20240266423

2024-08-08

FORMING OF AN ELECTRONIC POWER COMPONENT

20240222481

2024-07-04

HIGH NOISE IMMUNITY TRIAC STRUCTURE

20240204088

2024-06-20

TRIAC DEVICE WITH HIGH COMMUTATING CAPABILITY

20240113210

2024-04-04

System and method for bi-directional trench power switches

20230299188

2023-09-21

Ruggedized symmetrically bidirectional bipolar power transistor

20230197835

2023-06-22

Thyristor, triac and transient-voltage-suppression diode manufacturing

20230048984

2023-02-16

Semiconductor device with bi-directional double-base trench power switches

20220231151

2022-07-21

Electrostatic discharge protection devices and methods for fabricating electrostatic discharge protection devices

20220173232

2022-06-02

Thyristor assembly

#10

20210335997

2021-10-28

Silicon controlled rectifier and method for making the same

#11

20210335775

2021-10-28

Silicon controlled rectifier and method for making the same

#12

20210313461

2021-10-07

Ruggedized symmetrically bidirectional bipolar power transistor

#13

20210305415

2021-09-30

Thyristor assembly

#14

20210280698

2021-09-09

Thyristor, triac and transient-voltage-suppression diode manufacturing

#15

20210104512

2021-04-08

Bi-directional breakdown silicon controlled rectifiers

#16

20200303368

2020-09-24

Silicon-controlled-rectifier electrostatic protection structure and fabrication method thereof

#17

20190043972

2019-02-07

One-way switch with a gate referenced to the main back side electrode

#18

20180182876

2018-06-28

Semiconductor device and method of manufacturing the semiconductor device

#19

20180130898

2018-05-10

Ruggedized symmetrically bidirectional bipolar power transistor

#20

20180108766

2018-04-19

VERTICAL POWER COMPONENT

#21

20180026122

2018-01-25

B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density

#22

20170358568

2017-12-14

Positive strike SCR, negative strike SCR, and a bidirectional ESD structure that utilizes the positive strike SCR and the negative strike SCR

#23

20170288044

2017-10-05

Vertical power component

#24

20170243965

2017-08-24

Bi-directional punch-through semiconductor device and manufacturing method thereof

#25

20170084728

2017-03-23

Bidirectional MOS device and method for preparing the same

#26

20170069733

2017-03-09

Vertical semiconductor power component capable of withstanding high voltage

#27

20160322484

2016-11-03

Bidirectional Bipolar Transistor Structure with Field-Limiting Rings Formed by the Emitter Diffusion

#28

20160300939

2016-10-13

Bi-directional punch-through semiconductor device and manufacturing method thereof

#29

20160300831

2016-10-13

Bi-directional ESD protection device

#30

20160247904

2016-08-25

Vertical power component

#31

20160204239

2016-07-14

Insulated gate power device using a MOSFET for turning off

#32

20160148940

2016-05-26

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#33

20160118485

2016-04-28

High-voltage vertical power component

#34

20160093622

2016-03-31

Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication

#35

20150371985

2015-12-24

Positive strike SCR, negative strike SCR, and a bidirectional ESD structure that utilizes the positive strike SCR and the negative strike SCR

#36

20150108537

2015-04-23

High-voltage vertical power component

#37

20150050784

2015-02-19

Bi-directional silicon controlled rectifier structure

#38

20140347771

2014-11-27

Protection device and related fabrication methods

#39

20140346560

2014-11-27

Protection device and related fabrication methods

#40

20140339603

2014-11-20

Semiconductor device and method of manufacturing a semiconductor device

#41

20140332843

2014-11-13

Junction-isolated blocking voltage structures with integrated protection structures

#42

20140217462

2014-08-07

Vertical power component

#43

20140138735

2014-05-22

Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same

#44

20140131764

2014-05-15

Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC

#45

20140065773

2014-03-06

Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure

#46

20140057398

2014-02-27

Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor

#47

20130320395

2013-12-05

High-voltage vertical power component

#48

20130270605

2013-10-17

Apparatus and method for transient electrical overstress protection

#49

20130228822

2013-09-05

Vertical power component

#50

20120205713

2012-08-16

Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor

#51