208411 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Unipolar field-effect transistors Static induction transistors [SIT]
Insulated-gate semiconductor device and method of manufacturing the same
#2Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
#3MOSFET device
#4Schottky diode with buried layer in GaN materials
#5Method and system for floating guard rings in gallium nitride materials
#6BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#7Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove
#8Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove
#9Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor