208417 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor; Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices; Unipolar field-effect transistors with a PN junction gate, i.e. JFET
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2Planar JFET Device with Reduced Gate Resistance
#3SUPERCONDUCTING MATERIALS, DEVICES, AND PROCESSES
#4GATED BODY TRANSISTORS
#5Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof
#6SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#7SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#8POWER SEMICONDUCTOR DEVICE
#9TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
#10TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN
#11SEMICONDUCTOR DEVICE INCLUDING MOSFET REGION AND DIODE REGION AND MANUFACTURING METHOD THEREOF
#12ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
#13Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
#14SELF-ALIGNED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) DEVICE AND FABRICATION METHOD THEREOF
#15SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACTURING SAME
#16SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE LAYER AND CORRESPONDING METHOD OF PRODUCTION
#17Semiconductor device comprising a lateral super junction field effect transistor
#18SILICON CARBIDE SEMICONDUCTOR DEVICE, INVERTER CIRCUIT USING THE SAME, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#19SEMICONDUCTOR DEVICE
#20SEMICONDUCTOR DIODE AND MANUFACTURING METHOD
#21FIELD EFFECT TRANSISTOR HAVING SAME GATE AND SOURCE DOPING, CELL STRUCTURE, AND PREPARATION METHOD
#22Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof
#23SEMICONDUCTOR DEVICE
#24Superconducting materials, devices, and processes
#25High purity SiOC and SiC, methods compositions and applications
#26Nitride semiconductor device
#27Semiconductor device and method of manufacturing the same
#28Method for manufacturing an integrated circuit comprising a junction field effect transistor (JFET)
#29Semiconductor device and method for manufacturing the same
#30Junction field effect transistor on silicon-on-insulator substrate
#31Field-plate trench FET and associated method for manufacturing
#32Field-plate trench FET and associated method for manufacturing
#33Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices
#34TRANSISTOR WITH FIELD PLATE OVER TAPERED TRENCH ISOLATION
#35Integrated circuit comprising a junction field effect transistor
#36Junction field effect transistor (JFET) structure and methods to form same
#37Band gap engineered materials
#38High purity SiOC and SiC, methods compositions and applications
#39Semiconductor devices comprising getter layers and methods of making and using the same
#40Semiconductor Device and Method of Producing the Same
#41Split-gate JFET with field plate
#42Transistor with field plate over tapered trench isolation
#43Embedded JFETs for high voltage applications
#44Systems and methods for unipolar charge balanced semiconductor power devices
#45Method for manufacturing semiconductor device, and power conversion device
#46Semiconductor device and method of manufacturing the same
#47Semiconductor device and method of manufacturing same
#48Nano-tube MOSFET technology and devices
#49Semiconductor Device Comprising Diamond and Method For Its Manufacturing
#50Field-effect semiconductor device having a heterojunction contact
#51Nano-tube MOSFET technology and devices
#52Lateral gallium nitride JFET with controlled doping profile
#53Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces
#54Cascoded high voltage junction field effect transistor
#55High purity polymer derived 3C SiC, methods compositions and applications
#56High voltage MOSFET devices and methods of making the devices
#57CASCODED HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR
#58Semiconductor device, method for manufacturing same, power conversion device, three-phase motor system, automobile, and railway carriage
#59SYSTEMS AND METHODS FOR CMOS-INTEGRATED JUNCTION FIELD EFFECT TRANSISTORS FOR DENSE AND LOW-NOISE BIOELECTRONIC PLATFORMS
#60Embedded JFETs for high voltage applications
#61Fin-double-gated junction field effect transistor
#62Manufacturing methods of JFET-type compact three-dimensional memory
#63Semiconductor devices comprising getter layers and methods of making and using the same
#64Vertical junction FinFET device and method for manufacture
#65Method of forming a junction field effect transistor
#66High voltage junction field effect transistor
#67Semiconductor devices comprising getter layers and methods of making and using the same
#68Vertical junction FinFET device and method for manufacture
#69High purity SiOC and SiC, methods compositions and applications
#70Embedded JFETs for high voltage applications
#71High voltage MOSFET devices and methods of making the devices
#72Transistors comprising doped region-gap-doped region structures and methods of fabrication
#73Cascoded high voltage junction field effect transistor
#74Method of manufacturing a vertical semiconductor device
#75Field-effect semiconductor device
#76Systems and methods for CMOS-integrated junction field effect transistors for dense and low-noise bioelectronic platforms
#77Semiconductor devices comprising getter layers and methods of making and using the same
#78Method and system for doping control in gallium nitride based devices
#79Semiconductor device
#80Junction field effect transistor, and method of manufacture thereof
#81High voltage MOSFET devices and methods of making the devices
#82High voltage laterally diffused metal oxide semiconductor
#83Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
#84Method and system for a gallium nitride vertical JFET with self-aligned source and gate
#85Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
#86Junction gate field-effect transistor (JFET) and semiconductor device
#87MANUFACTURING METHOD OF JUNCTION FIELD EFFECT TRANSISTOR
#88Manufacturing method of semiconductor device and semiconductor device
#89Transistor with charge enhanced field plate structure and method
#90Method of fabricating a tunable schottky diode with depleted conduction path
#91SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AND METHOD OF FABRICATING THE SAME
#92Junction field effect transistor with an epitaxially grown gate structure
#93Embedded JFETs for high voltage applications
#94SEMICONDUCTOR DEVICE AND ASSOCIATED METHOD FOR MANUFACTURING
#95Semiconductor device and method for fabricating the same
#96Tunable schottky diode with depleted conduction path
#97Field-effect semiconductor device and manufacturing method therefor
#98Structures and methods for electrically and mechanically linked monolithically integrated transistor and NEMS/MEMS device
#99Embedded JFETs for high voltage applications
#100JFET device structures and methods for fabricating the same
#101Field controlled diode with positively biased gate
#102Junction field effect transistor with an epitaxially grown gate structure
#103Method and system for a GaN vertical JFET with self-aligned source and gate
#104Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
#105Method and system for doping control in gallium nitride based devices
#106Junction field effect transistor with an epitaxially grown gate structure
#107Vertical transistor having a vertical gate structure having a top or upper surface defining a facet formed between a vertical source and a vertical drain
#108NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#109JFET device structures and methods for fabricating the same
#110SEMICONDUCTOR WELL IMPLANTED THROUGH PARTIALLY BLOCKING MATERIAL PATTERN
#111Lateral junction field effect transistor and method of manufacturing the same
#112Lateral junction field effect transistor and method of manufacturing the same
#113Relaxed low-defect SGOI for strained SI CMOS applications
#114Junction field effect transistor and production method for the same
#115Method for forming raised structures by controlled selective epitaxial growth of facet using spacer
#116Method for forming raised structures by controlled selective epitaxial growth of facet using spacer
#117Lateral junction field effect transistor and method of manufacturing the same
#118Methods of fabricating contact regions for FET incorporating SiGe
#119Relaxed, low-defect SGOI for strained Si CMOS applications
#120Lateral junction field effect transistor and method of manufacturing the same
#121Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
#122Semiconductor apparatus having first and second gate electrodes
#123Junction field effect transistor (JFET) with first and second top layer of opposite conductivity type for high driving current and low pinch-off voltage