208448 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
#2THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLUDING THE SAME
#3CONCURRENT COMPENSATION IN A MEMORY SYSTEM
#4DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
#5DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
#6Silicon controlled rectifier
#7DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
#8SCR structure for ESD protection in SOI technologies
#9Manganese-doped perovskite layers and semiconductor device incorporating same
#10B-site doped perovskite layers and semiconductor device incorporating same
#11B-site doped perovskite layers and semiconductor device incorporating same
#12Doped polar layers and semiconductor device incorporating same
#13Doped polar layers and semiconductor device incorporating same
#14Doped polar layers and semiconductor device incorporating same
#15Doped polar layers and semiconductor device incorporating same
#16Thyristor
#17Doped polar layers and semiconductor device incorporating same
#18Rapid turn-off circuit in static transfer switch
#19Doped polar layers and semiconductor device incorporating same
#20Doped polar layers and semiconductor device incorporating same
#21Silicon controlled rectifier
#22Doped polar layers and semiconductor device incorporating same
#23Electrostatic discharge protection device
#24Electrostatic discharge protection device
#25Doped polar layers and semiconductor device incorporating same
#26Doped polar layers and semiconductor device incorporating same
#27Doped polar layers and semiconductor device incorporating same
#28Doped polar layers and semiconductor device incorporating same
#29Doped polar layers and semiconductor device incorporating same
#30Doped polar layers and semiconductor device incorporating same
#31Neuron circuit using p-n-p-n diode without external bias voltages
#32CAPACITIVE DISCHARGE UNIT FOR FIRESET EMPLOYING SILICON CARBIDE THYRISTOR AS HIGH VOLTAGE SWITCH FOR FUZING EVENT
#33Electrical overstress protection for electronic systems subject to electromagnetic compatibility fault conditions
#34Semiconductor device of electrostatic discharge protection
#35Transient voltage suppression device
#36Silicon controlled rectifier
#37High voltage tolerant circuit architecture for applications subject to electrical overstress fault conditions
#38Semiconductor device of electrostatic discharge protection
#39Doped polar layers and semiconductor device incorporating same
#40Doped polar layers and semiconductor device incorporating same
#41Doped polar layers and semiconductor device incorporating same
#42Doped polar layers and semiconductor device incorporating same
#43High surge transient voltage suppressor
#44Electrostatic discharge protection device
#45Electronic device for ESD protection
#46Method of changing a switching module using pressure-applying device
#47Switch assembly of reactive power compensation apparatus
#48High surge transient voltage suppressor
#49Submodule and electrical arrangement having submodules
#50Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification
#51Electrical circuit arrangement with an active discharge circuit
#52High surge transient voltage suppressor
#53Electronic device for ESD protection
#54Electrostatic discharge protection device
#55Electro-static discharge protection devices having a low trigger voltage
#56Stucture for protecting an integrated circuit against electrostatic discharges
#57Variable holding voltage silicon controlled rectifier using separate and distinct bipolars
#58Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
#59Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD protection
#60Electro-static discharge protection devices having a low trigger voltage
#61Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device
#62Electrostatic discharge protection device capable of adjusting holding voltage
#63Silicon-controlled rectifier and an ESD clamp circuit
#64Electrostatic discharge protection device and electronic device having the same
#65Bidirectional power switch with improved switching performance
#66Electronic device for ESD protection
#67Gated thyristor power device
#68Protection circuit of semiconductor device
#69SCR with fin body regions for ESD protection
#70SCR with fin body regions for ESD protection
#71Gated thyristor power device
#72Thyristor, a method of triggering a thyristor, and thyristor circuits
#73Electrostatic discharge protection device for high voltage operation
#74Semiconductor switch
#75Thyristor which can be triggered electrically and by radiation
#76Thyristor with integrated resistance and method for producing it
#77Isolated HF-control SCR switch
#78Methods for an ESD protection circuit including trigger-voltage tunable cascode transistors
#79Solid-state spark chamber for detection of radiation
#80Silicon controlled rectifier with integral deep trench capacitor