208447 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
Sub-classes:SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL INCLUDING THYRISTOR AND METHOD OF MANUFACTURING THE SAME
#2MODULE COMPRISING A SWITCHABLE BYPASS DEVICE
#3Protection devices with trigger devices and methods of formation thereof
#4Power semiconductor device comprising a thyristor and a bipolar junction transistor
#5Electrostatic discharge protection device
#6Electrostatic discharge protection device
#7Silicon carbide semiconductor device
#8Semiconductor device and manufacturing method thereof
#9Protection devices with trigger devices and methods of formation thereof
#10Electrostatic discharge protection device
#11Bidirectional switch having back to back field effect transistors
#12Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process
#13One-way switch with a gate referenced to the main back side electrode
#14Power component protected against overheating
#15MTP-Thyristor memory cell circuits and methods of operation
#16Thyristor with improved plasma spreading
#17Bidirectional switch having back to back field effect transistors
#18Semiconductor device, manufacturing method therefor and semiconductor module
#19Bidirectional power semiconductor
#20Power component protected against overheating
#21MTP-thyristor memory cell circuits and methods of operation
#22Protection devices with trigger devices and methods of formation thereof
#23ESD protection structure and method of fabrication thereof
#24Insulated gate power device using a MOSFET for turning off
#25Gated thyristor power device
#26Memory structrue and operation method thereof
#27ESD protection device
#28ESD protection device
#29Voltage-controlled bidirectional switch
#30Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
#31Bipolar mosfet devices and methods for their use
#32VOLTAGE-CONTROLLED BIDIRECTIONAL SWITCH
#33Voltage-controlled bidirectional switch
#34Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent
#35Voltage-controlled bidirectional switch