208450 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
LOW VOLTAGE TRIGGERING SILICON CONTROLLED RECTIFIER
#2GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
#3FinFET thyristors with embedded transistor control for protecting high-speed communication systems
#4Semiconductor devices including semiconductor pattern
#5Memory device using semiconductor element
#6SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
#7Semiconductor devices including semiconductor pattern
#8FinFET thyristors for protecting high-speed communication interfaces
#9Embedded N-channel metal oxide semiconductor (nmos) triggered silicon controlled rectification device
#10Power electronic arrangement
#11Method for depositing a metal chalcogenide on a substrate by cyclical deposition
#12Silicon controlled rectifier dynamic triggering and shutdown via control signal amplification
#13Low capacitance transient voltage suppressor
#14Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control
#15FinFET SCR with SCR implant under anode and cathode junctions
#16Low trigger and holding voltage silicon controlled rectifier (SCR) for non-planar technologies
#17Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge control
#18Memory circuit with thyristor
#19Power transmission device and wireless power transfer system
#20Vertical Thyristor Cell and Memory Array with Silicon Germanium Base Regions
#21Electronic device including a HEMT
#22Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
#23Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device
#24Electrostatic discharge protection device and electronic device having the same
#25ESD protection device with improved bipolar gain using cutout in the body well
#26Half-bridge HEMT circuit and an electronic package including the circuit
#27Bidirectional HEMT and an electronic package including the bidirectional HEMT
#28Electronic device including a bidirectional HEMT
#29Semiconductor devices and a method for forming a semiconductor device
#30ESD protection device with improved bipolar gain using cutout in the body well
#31Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#32Structure of a trench MOS rectifier and method of forming the same
#33SCR with fin body regions for ESD protection
#34Cross-coupled thyristor SRAM semiconductor structures and methods of fabrication
#35SCR with fin body regions for ESD protection
#36Gated thyristor power device
#37Structure of a trench MOS rectifier and method of forming the same
#38ESD protection device with improved bipolar gain using cutout in the body well
#39SCR/MOS clamp for ESD protection of integrated circuits
#40Three-terminal power device with high switching speed and manufacturing process
#41Bond pad with integrated transient over-voltage protection
#42Three-terminal power device with high switching speed and manufacturing process
#43Semiconductor device and its driving method
#44Bipolar mosfet devices and methods for their use
#45SEMICONDUCTOR MEMORY DEVICE
#46Memory cell with trenched gated thyristor
#47Memory cell with trenched gated thyristor
#48Semiconductor memory device
#49Low capacitance transient voltage suppressor