208455 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action Gate-turn-off devices
Sub-classes:Semiconductor devices comprising getter layers and methods of making and using the same
#2Semiconductor device
#3Silicon controlled rectifier (SCR) based ESD protection device
#4Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#5Array of gated devices and methods of forming an array of gated devices
#6VERTICAL SEMICONDUCTOR DEVICE WITH THINNED SUBSTRATE
#74-LAYER DEVICES WITH IMPROVED REVERSE CURRENT ACTION CAPABILITY
#8Method for controlling an uninterruptible power supply and system for an uninterruptible power supply
#9Array of gated devices and methods of forming an array of gated devices
#10Light-emitting component, light-emitting device, and image forming apparatus
#11Light-emitting component having light-absorbing layer, light-emitting device, and image forming apparatus
#12Layered structure including thyristor and light-emitting element, light-emitting component, light-emitting device, and image forming apparatus
#13Light-emitting component, light-emitting device, and image forming apparatus
#14Flat gate commutated thyristor
#15Method for manufacturing a semiconductor device comprising a thin semiconductor wafer
#16ELECTRONIC DEVICE, IN PARTICULAR FOR PROTECTION AGAINST OVERVOLTAGES
#17Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base
#18Silicon controlled rectifier (SCR) based ESD protection device
#19Electrostatic protection circuit, semiconductor integrated circuit device, and electronic device
#20Vertical semiconductor device with thinned substrate
#21Array of gated devices and methods of forming an array of gated devices
#22Semiconductor devices comprising getter layers and methods of making and using the same
#23Electronic device, in particular for protection against overvoltages
#24Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same
#25Double-sided vertical semiconductor device with thinned substrate
#26Ion implantation apparatus with ion beam directing unit
#27Bipolar non-punch-through power semiconductor device
#28SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device
#29Semiconductor device
#30Passivation structure for semiconductor devices
#31Semiconductor device
#32Electrostatic discharge (ESD) silicon controlled rectifier (SCR) with lateral gated section
#33Array of gated devices and methods of forming an array of gated devices
#34Reverse-conducting power semiconductor device
#35LATCH-UP ROBUST SCR-BASED DEVICES
#36Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing
#37Tunable FIN-SCR for robust ESD protection
#38Vertical semiconductor device with thinned substrate
#39Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer
#40Latch-up robust SCR-based devices
#41Tunable fin-SCR for robust ESD protection
#42Vertical semiconductor device with thinned substrate
#43Double-sided vertical semiconductor device with thinned substrate
#44SEMICONDUCTOR DEVICE
#45Power semiconductor device
#46SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#47Semiconductor component with improved dynamic behavior
#48Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
#49Vertical semiconductor device with thinned substrate
#50Vertical semiconductor device with thinned substrate
#51Electronic device structure with a semiconductor ledge layer for surface passivation
#52Electronic device structure including a buffer layer on a base layer
#53Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
#54SUPER GTO-BASED POWER BLOCKS
#55Stable power devices on low-angle off-cut silicon carbide crystals
#56Semiconductor devices with current shifting regions and related methods
#57Mesa termination structures for power semiconductor devices including mesa step buffers
#58SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME, AND POWER CONVERSION APPARATUS INCORPORATING THIS SEMICONDUCTOR DEVICE
#59Power semiconductor device
#60Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
#61Semiconductor device with Cu metal-base and manufacturing method thereof
#62High-withstand voltage wide-gap semiconductor device and power device
#63Gate turn-off thyristor
#64Minimizing degradation of SiC bipolar semiconductor devices
#65Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
#66Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
#67Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof
#68Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
#69Minimizing degradation of SiC bipolar semiconductor devices
#70Minimizing degradation of SiC bipolar semiconductor devices
#71Silicon controlled rectifier
#72EOS protection for integrated circuits