ClassID:

208456

H01L29/745 - CPC Classification

Classification description:

Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Bipolar devices; Thyristor-type devices, e.g. having four-zone regenerative action; Gate-turn-off devices with turn-off by field effect

Recent Application in this class:
#1
20250015172
2025-01-09

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

#2
20240162295
2024-05-16

GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING THICKNESS

#3
20240014270
2024-01-11

Insulated-gate semiconductor device and method of manufacturing the same

#4
20230154986
2023-05-18

Insulated-gate semiconductor device and method of manufacturing the same

#5
20230136897
2023-05-04

Turn-Off Power Semiconductor Device with Gate Runners

#6
20230118951
2023-04-20

Power semiconductor device comprising a thyristor and a bipolar junction transistor

#7
20220173232
2022-06-02

Thyristor assembly

#8
20220013637
2022-01-13

Insulated-gate semiconductor device

#9
20210305415
2021-09-30

Thyristor assembly

#10
20210257485
2021-08-19

Gate-turn-off thyristor and manufacturing method thereof

#11
20210135037
2021-05-06

Automatically limiting power consumption by devices using infrared or radio communications

#12
20200312987
2020-10-01

Lateral insulated gate turn-off device with induced emitter

#13
20200235210
2020-07-23

Insulated-gate semiconductor device and method of manufacturing the same

#14
20200058740
2020-02-20

Insulated-gate semiconductor device and method of manufacturing the same

#15
20180234584
2018-08-16

Light-emitting component, light-emitting device, and image forming apparatus

#16
20180234583
2018-08-16

Light-emitting component having light-absorbing layer, light-emitting device, and image forming apparatus

#17
20180233534
2018-08-16

Layered structure including thyristor and light-emitting element, light-emitting component, light-emitting device, and image forming apparatus

#18
20180233533
2018-08-16

Light-emitting component, light-emitting device, and image forming apparatus

#19
20180204913
2018-07-19

Flat gate commutated thyristor

#20
20170256614
2017-09-07

Vertical insulated gate turn-off thyristor with intermediate p+ layer in p-base

#21
20170243935
2017-08-24

Designing and fabricating semiconductor devices with specific terrestrial cosmic ray (TCR) ratings

#22
20170178947
2017-06-22

Trench separation diffusion for high voltage device

#23
20170033208
2017-02-02

Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same

#24
20130300487
2013-11-14

SEMICONDUCTOR SWITCH

#25
20130026493
2013-01-31

SiC devices with high blocking voltage terminated by a negative bevel

#26
20110049561
2011-03-03

Solid-state pinch off thyristor circuits

#27
20080237630
2008-10-02

Semiconductor switch

#28
20080070350
2008-03-20

Semiconductor device and method of forming a semiconductor device

#29
20070114565
2007-05-24

Integrated field-effect transistor-thyristor device

#30
20060261443
2006-11-23

Semiconductor device and method of forming a semiconductor device

#31
20060027910
2006-02-09

Pressure-contact type semiconductor device

#32
14850951
2016-05-17

Silicon controlled rectifier