208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Method for forming contact hole in semiconductor device
#2702Methods of Forming Field Effect Transistors Having Silicon-Germanium Source and Drain Regions
#2703FABRICATING METHOD OF SEMICONDUCTOR DEVICE
#2704Semiconductor device and fabricating method thereof
#2705Semiconductor device and fabricating method thereof
#2706Semiconductor device and fabrication process thereof
#2707Ion implantation with molecular ions containing phosphorus and arsenic
#2708Strained semiconductor device and method of making same
#2709SEMICONDUCTOR DEVICE WHICH HAS MOS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#2710Multi-gate semiconductor device and method for forming the same
#2711STRUCTURE AND METHOD TO IMPROVE SHORT CHANNEL EFFECTS IN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS
#2712Semiconductor devices and methods of manufacture thereof
#2713SEMICONDUCTOR DEVICE
#2714Active regions with compatible dielectric layers
#2715SHALLOW TRENCH ISOLATION STRUCTURE FOR SHIELDING TRAPPED CHARGE IN A SEMICONDUCTOR DEVICE
#2716Method and structure for reducing floating body effects in MOSFET devices
#2717Method for manufacturing a semiconductor device
#2718Method to form selective strained Si using lateral epitaxy
#2719METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2720Semiconductor device and method for manufacturing the same
#2721Manufacturing method for increasing product yield of memory devices suffering from source/drain junction leakage
#2722Removable spacer
#2723Rotational shear stress for charge carrier mobility modification
#2724SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2725SEMICONDUCTOR DEVICES AND FABRICATION PROCESS THEREOF
#2726Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
#2727METHOD OF MANUFACTURING HIGH VOLTAGE DEVICE
#2728Integrated semiconductor device and method of manufacturing an integrated semiconductor device
#2729Semiconductor devices with dual-metal gate structures and fabrication methods thereof
#2730Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
#2731Low noise and high performance LSI device, layout and manufacturing method
#2732Fabricating method of CMOS
#2733CMOS circuits including a passive element having a low end resistance
#2734Polysilicon levels for silicided structures including MOSFET gate electrodes and 3D devices
#2735Semiconductor device and method for fabricating the same
#2736SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
#2737Metal oxide field effect transistor with a sharp halo
#2738ULTRA SHALLOW JUNCTION WITH RAPID THERMAL ANNEAL
#2739Method of manufacturing semiconductor device
#2740Method of fabricating semiconductor integrated circuit device
#2741Semiconductor device with a gate region having overlapping first conduction type and second conduction type dopants
#2742SEMICONDUCTOR DEVICE WITH DOPED TRANSISTOR
#2743Semiconductor device and method for fabricating semiconductor device
#2744Semiconductor device and manufacturing method thereof
#2745Semiconductor structure with high-voltage sustaining capability and fabrication method of the same
#2746Manufacturing Method for Semiconductor Device
#2747Semiconductor device and manufacturing method thereof
#2748INTRINSICALLY STRESSED LINER AND FABRICATION METHODS THEREOF
#2749Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device
#2750Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques
#2751Method of production of a semiconductor memory device and semiconductor memory device
#2752Semiconductor Device and Fabricating Method Thereof
#2753High-voltage-resistant MOS transistor and method for manufacturing the same
#2754Method of making a semiconductor device comprising isolation trenches inducing different types of strain
#2755Enhanced mobility MOSFET devices
#2756Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
#2757Varactor with halo implant regions of opposite polarity
#2758Field effect transistor comprising a stressed channel region and method of forming the same
#2759Method for controlling charge amount of ion beam and a wafer applied in the method
#2760Method for controlling charge amount of ion beam and a wafer applied in the method
#2761Method for manufacturing a gate sidewall spacer using an energy beam treatment
#2762Split gate memory cell method
#2763Method of fabricating a semiconductor device
#2764High-voltage MOS device improvement by forming implantation regions
#2765Semiconductor device
#2766Method of manufacturing semiconductor device
#2767Method of fabricating semiconductor device having stress enhanced MOS transistor and semiconductor device fabricated thereby
#2768Power MOSFET, semiconductor device including the power MOSFET, and method for making the power MOSFET
#2769Method for fabricating semiconductor device and semiconductor device
#2770Semiconductor Device and Manufacturing Method Thereof
#2771Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same
#2772Method of fabricating semiconductor device
#2773Semiconductor device
#2774Semiconductor Device Including Nickel Alloy Silicide Layer Having Uniform Thickness and Method of Manufacturing the Same
#2775MOS devices with partial stressor channel
#2776Semiconductor device including field effect transistor and method of forming the same
#2777Method of removing a spacer, method of manufacturing a metal-oxide-semiconductor transistor device, and metal-oxide-semiconductor transistor device
#2778SEMICONDUCTOR DEVICE, CMOS DEVICE AND FABRICATING METHODS OF THE SAME
#2779Low noise and high performance LSI device, layout and manufacturing method
#2780MOS devices with graded spacers and graded source/drain regions
#2781Complementary metal-oxide-semiconductor device and fabricating method thereof
#2782Metal layer inducing strain in silicon
#2783METHOD FOR FORMING DOPED METAL-SEMICONDUCTOR COMPOUND REGIONS
#2784Hafnium aluminium oxynitride high-K dielectric and metal gates
#2785Method for fabrication of semiconductor device
#2786Method of Manufacturing Semiconductor Device
#2787Method of fabricating semiconductor devices and method of adjusting lattice distance in device channel
#2788Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same
#2789FABRICATING METHOD OF MOSFET WITH THICK GATE DIELECTRIC LAYER
#2790Semiconductor and method for manufacturing the same
#2791CMOS Devices Adapted to Prevent Latchup and Methods of Manufacturing the Same
#2792Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor
#2793Semiconductor device and manufacturing method thereof
#2794METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING TWO STEP POCKET IMPLANT PROCESS
#2795Field effect transistor having a stressed contact etch stop layer with reduced conformality
#2796Method for producing a doped nitride film, doped oxide film and other doped films
#2797STRUCTURE FOR UNIFORM TRIGGERING OF MULTIFINGER SEMICONDUCTOR DEVICES WITH TUNABLE TRIGGER VOLTAGE
#2798Semiconductor device and method of fabricating the same
#2799Semiconductor device and method for making the same
#2800Method for smoothing a resist pattern prior to etching a layer using the resist pattern
#2801ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXIAL COMPRESSIVE STRAIN
#2802Methods of forming transistor devices
#2803Embedded stressed nitride liners for CMOS performance improvement
#2804Method for improving transistor performance through reducing the salicide interface resistance
#2805Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
#2806SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2807GATE ELECTRODE FORMING METHOD FOR SEMICONDUCTOR DEVICE
#2808SEMICONDUCTOR MEMORY DEVICE
#2809Formation of standard voltage threshold and low voltage threshold MOSFET devices
#2810Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof
#2811Methods of forming strained semiconductor channels
#2812Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same
#2813Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
#2814Design Structure Incorporating Semiconductor Device Structures with Voids
#2815Method for reducing hot carrier effect of MOS transistor
#2816Reverse metal process for creating a metal silicide transistor gate structure
#2817Method for fabricating semiconductor MOS device
#2818Split-channel antifuse array architecture
#2819Semiconductor Device and Method of Manufacturing the Same
#2820TISIN LAYER ON SEMICONDUCTOR DEVICE
#2821Strained semiconductor, devices and systems and methods of formation
#2822Semiconductor device and method of manufacturing the same
#2823ESD protection for bipolar-CMOS-DMOS integrated circuit devices
#2824SEMICONDUCTOR DEVICE
#2825Transfer of stress to a layer
#2826SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
#2827Semiconductor devices and methods of fabricating the same
#2828METHOD FOR FORMING A STRESSOR LAYER
#2829Antifuse circuit with well bias transistor
#2830Semiconductor device and method of manufacturing the same
#2831Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same
#2832FABRICATION METHODS FOR COMPRESSIVE STRAINED-SILICON AND TRANSISTORS USING THE SAME
#2833USE OF CARBON CO-IMPLANTATION WITH MILLISECOND ANNEAL TO PRODUCE ULTRA-SHALLOW JUNCTIONS
#2834Method for forming semiconductor device
#2835Semiconductor device having a silicide layer and method of fabricating the same
#2836Field effect transistors with dielectric source drain halo regions and reduced miller capacitance
#2837Structures of high-voltage MOS devices with improved electrical performance
#2838Semiconductor device and manufacturing method thereof
#2839Method of fabricating semiconductor devices
#2840Dual work function metal gate structure and related method of manufacture
#2841Pinning layer for low resistivity N-type source drain ohmic contacts
#2842Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
#2843Field effect transistors and methods for fabricating the same
#2844MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#2845Antifuse circuit with well bias transistor
#2846Semiconductor Devices Including Impurity Doped Region and Methods of Forming the Same
#2847CMOS devices adapted to prevent latchup and methods of manufacturing the same
#2848Method for fabricating MOS transistor
#2849Method and structure for forming strained SI for CMOS devices
#2850Semiconductor device having nitrided high-k gate dielectric and metal gate electrode and methods of forming same
#2851METHOD FOR STRAINING A SEMICONDUCTOR DEVICE
#2852Semiconductor device and method of fabricating semiconductor device
#2853Methods for contact resistance reduction of advanced CMOS devices
#2854METHOD OF FABRICATING DIFFERENT SEMICONDUCTOR DEVICE TYPES WITH REDUCED SETS OF PATTERN LEVELS
#2855SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2856Field effect transistors (FETs) with multiple and/or staircase silicide
#2857Methods of forming silicide regions and resulting MOS devices
#2858Semiconductor device structures incorporating voids and methods of fabricating such structures
#2859Semiconductor integrated circuit device having deposited layer for gate insulation
#2860Multiple conduction state devices having differently stressed liners
#2861Surface Modification Method for Solid Sample, Impurity Activation Method, and Method for Manufacturing Semiconductor Device
#2862REDUCTION OF SLIP AND PLASTIC DEFORMATIONS DURING ANNEALING BY THE USE OF ULTRA-FAST THERMAL SPIKES
#2863Semiconductor integrated circuit device having deposited layer for gate insulation
#2864METHOD FOR FABRICATING DOPED POLYSILICON LINES
#2865Implantation of carbon and/or fluorine in NMOS fabrication
#2866Method for fabricating a semiconductor device having an insulation film with reduced water content
#2867Method for making split dual gate field effect transistor
#2868Advanced forming method and structure of local mechanical strained transistor
#2869System and method for I/O ESD protection with polysilicon regions fabricated by processes for making core transistors
#2870Laterally diffused metal oxide semiconductor device and method of forming the same
#2871Semiconductor device having ultra-shallow and highly activated source/drain extensions
#2872Method for fabricating semiconductor device
#2873N-channel MOSFETs comprising dual stressors, and methods for forming the same
#2874Spacer-less low-k dielectric processes
#2875Transistor, a transistor arrangement and method thereof
#2876Gate stress engineering for MOSFET
#2877Semiconductor device manufacturing method including three gate insulating films
#2878Method of manufacturing semiconductor device
#2879Metal oxide field effect transistor with a sharp halo and a method of forming the transistor
#2880SYSTEM ON CHIP AND METHOD FOR MANUFACTURING THE SAME
#2881Semiconductor device manufacturing method with spin-coating of photoresist material
#2882Method of forming substantially L-shaped silicide contact for a semiconductor device
#2883MOS devices with corner spacers
#2884Semiconductor device that is advantageous in complex stress engineering and method of manufacturing the same
#2885Method of manufacturing a semiconductor device
#2886METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
#2887Method of forming transistor structure having stressed regions of opposite types
#2888Modifying work function in PMOS devices by counter-doping
#2889Transistor and method for forming the same
#2890TECHNIQUE FOR FORMING A SILICON NITRIDE LAYER HAVING HIGH INTRINSIC COMPRESSIVE STRESS
#2891Semiconductor device and method of manufacturing the same
#2892Silicide gate field effect transistors and methods for fabrication thereof
#2893Film forming method, fabrication process of semiconductor device, computer-readable recording medium and sputtering apparatus
#2894Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same
#2895Vertical device with sidewall spacer, methods of forming sidewall spacers and field effect transistors, and patterning method
#2896Implanted counted dopant ions
#2897SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same
#2898MOSFET with super-steep retrograded island
#2899Semiconductor device and method for forming the same
#2900Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
#2901IMPROVED THERMAL BUDGET USING NICKEL BASED SILICIDES FOR ENHANCED SEMICONDUCTOR DEVICE PERFORMANCE
#2902Semiconductor device and a method of manufacturing the same
#2903Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer
#2904Semiconductor device fabrication method using ultra-rapid thermal annealing
#2905Semiconductor device and its manufacturing method
#2906Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer
#2907Devices and methods to improve carrier mobility
#2908Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer
#2909In situ processing for ultra-thin gate oxide scaling
#2910METHOD FOR FORMING ULTRA-SHALLOW HIGH QUALITY JUNCTIONS BY A COMBINATION OF SOLID PHASE EPITAXY AND LASER ANNEALING
#2911Devices and methods of preventing plasma charging damage in semiconductor devices
#2912Method of doping a gate electrode of a field effect transistor
#2913Semiconductor device and method of fabricating the same
#2914Laterally diffused metal oxide semiconductor device and method of forming the same
#2915SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
#2916Manufacturing method of semiconductor device and semiconductor device
#2917Semiconductor device incorporating fluorine into gate dielectric
#2918Antimony ion implantation for semiconductor components
#2919Method for forming silicon oxide film and for manufacturing capacitor and semiconductor device
#2920Semiconductor device and method of manufacturing the same
#2921Semiconductor device and method of manufacture thereof
#2922Semiconductor device and method of manufacture thereof
#2923SEMICONDUCTOR DEVICES HAVING SILICIDED ELECTRODES
#2924Semiconductor device including MOS transistor having LOCOS offset structure and manufacturing method thereof
#2925Methods of performance improvement of HVMOS devices
#2926Method and apparatus of fabricating semiconductor device
#2927Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
#2928Nonvolatile memory semiconductor device and manufacturing method thereof
#2929Semiconductor device and fabricating method thereof
#2930Integrated circuit system with double doped drain transistor
#2931Semiconductor Device And Method Of Manufacturing The Same
#2932FORMATION OF A DISPOSABLE SPACER TO POST DOPE A GATE CONDUCTOR
#2933Spacer and process to enhance the strain in the channel with stress liner
#2934Transistor device having an increased threshold stability without drive current degradation
#2935Method for manufacturing micro structure
#2936Semiconductor device fabricated by selective epitaxial growth method
#2937Method of varying etch selectivities of a film
#2938Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration
#2939Semiconductor device
#2940Method for manufacturing a semiconductor device using a nitrogen containing oxide layer
#2941MOS transistors and methods of manufacturing the same
#2942Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
#2943Semiconductor device and manufacturing method thereof
#2944SEMICONDUCTOR DEVICE
#2945Semiconductor device and method for incorporating a halogen in a dielectric
#2946Shallow trench isolation method for shielding trapped charge in a semiconductor device
#2947Method for manufacturing semiconductor integrated circuit device
#2948Localized compressive strained semiconductor
#2949Recessed poly extension T-gate
#2950Field effect transistor and method of manufacturing a field effect transistor
#2951Selective incorporation of charge for transistor channels
#2952Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt
#2953Solutions for integrated circuit integration of alternative active area materials
#2954Structure and method to form source and drain regions over doped depletion regions
#2955Triple-well CMOS devices with increased latch-up immunity and methods of fabricating same
#2956Manufacturing a semiconductor device including sidewall floating gates
#2957FUSI integration method using SOG as a sacrificial planarization layer
#2958Method of manufacturing a semiconductor device including dopant introduction
#2959Semiconductor device manufacturing method
#2960Defect-free SiGe source/drain formation by epitaxy-free process
#2961Method of fabricating a dual-gate structure that prevents cut-through and lowered mobility
#2962EPI T-gate structure for CoSiextendibility
#2963Spacer T-gate structure for CoSiextendibility
#2964Triple-well CMOS devices with increased latch-up immunity and methods of fabricating same
#2965SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THEREOF
#2966Method for manufacturing a semiconductor substrate and a method for manufacturing a semiconductor device and the semiconductor device manufactured thereby
#2967Method for performing a CMP process on a wafer formed with a conductive layer
#2968Method of manufacture of semiconductor device
#2969Fabrication process of a semiconductor device
#2970Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gas
#2971Dual metal silicide scheme using a dual spacer process
#2972Three-dimensional control-gate architecture for single poly EPROM memory devices fabricated in planar CMOS technology
#2973Method to control the gate sidewall profile by graded material composition
#2974Method of fabricating a lateral double-diffused MOSFET
#2975High speed OTP sensing scheme
#2976Semiconductor device and manufacturing method thereof
#2977Method of manufacturing a semiconductor device including a high voltage MOS and the semiconductor device manufactured by the method
#2978Air break for improved silicide formation with composite caps
#2979Method of manufacturing a semiconductor device
#2980METHOD FOR MANUFACTURING MOSFET ON SEMICONDUCTOR DEVICE
#2981Field effect transistors with dielectric source drain halo regions and reduced miller capacitance
#2982Method for manufacturing a semiconductor device
#2983High voltage field effect device and method
#2984Semiconductor device and method for fabricating the same
#2985Semiconductor device and method of manufacturing the same
#2986Semiconductor device and fabrication method thereof
#2987Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
#2988METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2989Method for forming transistor of semiconductor device
#2990GATE STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2991SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2992Semiconductor device comprising a contact structure with increased etch selectivity
#2993SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2994Semiconductor Device and Fabrication Method Thereof
#2995System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
#2996Method of manufacturing a transistor
#2997Semiconductor device and manufacturing method of the same
#2998Butted contact structure
#2999SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#3000High voltage semiconductor device and method of manufacturing the same