208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#2402High-k gate dielectric and method of manufacture
#2403Method of manufacturing a semiconductor device with multilayer sidewall
#2404Process of forming an electronic device including a doped semiconductor layer
#2405Method of implanting a non-dopant atom into a semiconductor device
#2406Method for making a transistor with a stressor
#2407Cascode current sensor for discrete power semiconductor devices
#2408FET device with stabilized threshold modifying material
#2409Semiconductor devices and methods of manufacture thereof
#2410Integration Scheme for Dual Work Function Metal Gates
#2411High Performance Metal Gate CMOS with High-K Gate Dielectric
#2412Low power circuit structure with metal gate and high-k dielectric
#2413Simple low power circuit structure with metal gate and high-k dielectric
#2414Metal oxide semiconductor transistor
#2415METHOD OF PROCESSING A HIGH-K DIELECTRIC FOR CET SCALING
#2416Method of forming a semiconductor structure comprising an implantation of ions of a non-doping element
#2417Semiconductor device and fabrication method thereof
#2418METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING ABRUPT ULTRA SHALLOW EPI-TIP REGIONS
#2419ESD protection for bipolar-CMOS-DMOS integrated circuit devices
#2420ESD protection for bipolar-CMOS-DMOS integrated circuit devices
#2421SEMICONDUCTOR DEVICE
#2422SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME IN WHICH A MOBILITY CHANGE OF THE MAJOR CARRIER IS INDUCED THROUGH STRESS APPLIED TO THE CHANNEL
#2423Semiconductor device and fabrication method thereof
#2424ESD protection for bipolar-CMOS-DMOS integrated circuit devices
#2425SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2426Semiconductor devices and methods of manufacture thereof
#2427COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL
#2428Method to improve transistor Tox using high-angle implants with no additional masks
#2429Transistor with dopant-bearing metal in source and drain
#2430Method for manufacturing semiconductor device
#2431Method of manufacturing complementary metal oxide semiconductor transistors
#2432Method of controlling metal silicide formation
#2433Method for reshaping silicon surfaces with shallow trench isolation
#2434Metal-oxide-semiconductor device
#2435Flash anneal for a PAI, NiSi process
#2436Boron derived materials deposition method
#2437METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
#2438CHANNEL STRESS MODIFICATION BY CAPPED METAL-SEMICONDUCTOR LAYER VOLUME CHANGE
#2439SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2440METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION AND METHOD FOR FABRICATING TRANSISTOR
#2441Semiconductor device and method for manufacturing the same
#2442MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#2443Method of manufacturing semiconductor device
#2444Method of fabricating high-voltage mos having doubled-diffused drain
#2445Semiconductor device and method of manufacturing the same
#2446Semiconductor device and a method of manufacturing the same
#2447Noise reduction in semiconductor device using counter-doping
#2448Multi-stage implant to improve device characteristics
#2449Methods of manufacturing semiconductor devices
#2450Method for forming a nickelsilicide FUSI gate
#2451Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
#2452METHOD FOR CLEANING WAFER
#2453Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer
#2454Method of fabricating metal oxide semiconductor field effect transistor
#2455Semiconductor device and method of manufacturing the same
#2456Semiconductor device and method for manufacturing semiconductor device
#2457HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
#2458Device performance improvement using flowfill as material for isolation structures
#2459Metal-germanium physical vapor deposition for semiconductor device defect reduction
#2460Method of forming a field effect transistor
#2461Methods for forming field effect transistors and EPI-substrate
#2462Gapfill for metal contacts
#2463Thermal treatment equipment and method for heat-treating
#2464P-DOPED REGION WITH IMPROVED ABRUPTNESS
#2465MOS structures with contact projections for lower contact resistance and methods for fabricating the same
#2466ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF IONS DERIVED FROM CARBORANE MOLECULAR SPECIES
#2467High performance CMOS devices and methods for making same
#2468MULTI-LAYER MASK METHOD FOR PATTERNED STRUCTURE ETHCING
#2469Method of fabricating semiconductor device isolation structure
#2470Strained isolation regions
#2471TWO STEP PHOTORESIST STRIPPING METHOD SEQUENTIALLY USING ION ACTIVATED AND NON-ION ACTIVATED NITROGEN CONTAINING PLASMAS
#2472Field effect transistor using carbon based stress liner
#2473Semiconductor device with strain in channel region and its manufacture method
#2474Multiple millisecond anneals for semiconductor device fabrication
#2475Method of manufacturing semiconductor device
#2476METHOD OF FABRICATING HIGH VOLTAGE MOS TRANSISTOR DEVICE
#2477Methods for forming capacitor structures
#2478Method of forming a semiconductor device featuring a gate stressor and semiconductor device
#2479Junction barrier Schottky diode with dual silicides
#2480Method for suppressing layout sensitivity of threshold voltage in a transistor array
#2481Semiconductor device
#2482Integration of non-volatile charge trap memory devices and logic CMOS devices
#2483Integration of non-volatile charge trap memory devices and logic CMOS devices
#2484MIS-type field-effect transistor
#2485Method of forming metal/high-κ gate stacks with high mobility
#2486Semiconductor device and manufacturing method of the same
#2487Integration of non-volatile charge trap memory devices and logic CMOS devices
#2488Shallow junction formation and high dopant activation rate of MOS devices
#2489Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor
#2490USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
#2491Use of dopants to provide low defect gate full silicidation
#2492Contact barrier structure and manufacturing methods
#2493SiGe or SiC layer on STI sidewalls
#2494Low on resistance CMOS transistor for integrated circuit applications
#2495Semiconductor device and method for fabricating the same
#2496SEMICONDUCTOR DEVICE WITH RAISED SPACERS
#2497Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
#2498METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2499Semiconductor device and method of manufacturing semiconductor device
#2500Semiconductor device and method for manufacturing the same
#2501Semiconductor device and method for fabricating the same
#2502Substantially L-shaped silicide for contact
#2503Semiconductor device manufactured using a gate silicidation involving a disposable chemical/mechanical polishing stop layer
#2504SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#2505Ultra thin channel (UTC) MOSFET structure formed on BOX regions having different depths and different thicknesses beneath the UTC and source/drain regions and method of manufacture thereof
#2506HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2507High-voltage semiconductor device and method for manufacturing the same
#2508TRANSISTOR HAVING GATE DIELECTRIC LAYER OF PARTIAL THICKNESS DIFFERENCE AND METHOD OF FABRICATING THE SAME
#2509Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit
#2510Method and structure for forming strained Si for CMOS devices
#2511TRANSISTOR FABRICATION METHOD
#2512Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same
#2513Semiconductor device and semiconductor device manufacturing method
#2514Implantation processes for straining transistor channels of semiconductor device structures and semiconductor devices with strained transistor channels
#2515Semiconductor device and process for manufacturing the same
#2516Semiconductor device manufactured using a laminated stress layer
#2517METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
#2518LOW-K DISPLACER FOR OVERLAP CAPACITANCE REDUCTION
#2519Method of forming a semiconductor device with multiple tensile stressor layers
#2520Self-Aligned Spacer Contact
#2521ACTIVE AREA JUNCTION ISOLATION STRUCTURE AND JUNCTION ISOLATED TRANSISTORS INCLUDING IGFET, JFET AND MOS TRANSISTORS AND METHOD FOR MAKING
#2522MOSFET structure with multiple self-aligned silicide contacts
#2523Semiconductor device and method of manufacturing the same
#2524Method for preventing the formation of electrical shorts via contact ILD voids
#2525Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
#2526FIELD EFFECT TRANSISTOR WITH INVERTED T SHAPED GATE ELECTRODE AND METHODS FOR FABRICATION THEREOF
#2527SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE
#2528Technique for enhancing transistor performance by transistor specific contact design
#2529Metal oxide semiconductor transistor with Y shape metal gate and fabricating method thereof
#2530MOS devices with improved source/drain regions with SiGe
#2531METHOD FOR TREATING BASE OXIDE TO IMPROVE HIGH-K MATERIAL DEPOSITION
#2532Semiconductor device with hydrogen barrier and method therefor
#2533Method for Manufacturing Semiconductor Device
#2534Structure and method for mosfet with reduced extension resistance
#2535Work function adjustment with the implant of lanthanides
#2536Method for process integration of non-volatile memory cell transistors with transistors of another type
#2537SEMICONDUCTOR DEVICE
#2538Semiconductor Device Manufactured Using an Oxygenated Passivation Process During High Density Plasma Deposition
#2539MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#2540Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
#2541Method of removing material layer and remnant metal
#2542Semiconductor device and fabrication thereof
#2543SEMICONDUCTOR APPARATUS AND PRODUCTION METHOD OF THE SAME
#2544Forming silicided gate and contacts from polysilicon germanium and structure formed
#2545Strain enhanced semiconductor devices and methods for their fabrication
#2546Semiconductor device and method for manufacturing the same
#2547Split-channel antifuse array architecture
#2548Semiconductor device structure with strain layer and method of fabricating the semiconductor device structure
#2549MOS TRANSISTOR FOR REDUCING SHORT-CHANNEL EFFECTS AND ITS PRODUCTION
#2550THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC
#2551Method of making a semiconductor structure utilizing spacer removal and semiconductor structure
#2552Selective deposition of germanium spacers on nitride
#2553Carbon-Doped Epitaxial SiGe
#2554Method for fabricating P-channel field-effect transistor (FET)
#2555METHOD FOR PREPARING A METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
#2556METHOD OF MANUFACTURING SEMICONDUCTOR MOS TRANSISTOR DEVICES
#2557High quality silicon oxynitride transition layer for high-k/metal gate transistors
#2558Isolated bipolar transistor
#2559Isolated rectifier diode
#2560Silicided metal gate for multi-threshold voltage configuration
#2561Semiconductor device
#2562Semiconductor Device and Manufacturing Method Thereof
#2563Integration Scheme for Dual Work Function Metal Gates
#2564COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND METHOD OF FABRICATING THE SAME
#2565Isolated lateral MOSFET in epi-less substrate
#2566Isolated trench MOSFET in epi-less semiconductor sustrate
#2567Semiconductor device
#2568Ultra-abrupt semiconductor junction profile
#2569SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#2570Isolated junction field-effect transistor
#2571Method of forming CMOS transistors with dual-metal silicide formed through the contact openings
#2572POLYSILICON CONDUCTIVITY IMPROVEMENT IN A SALICIDE PROCESS TECHNOLOGY
#2573Method of selectively forming a silicon nitride layer
#2574STRUCTURE HAVING DUAL SILICIDE REGION AND RELATED METHOD
#2575Integrated circuit system employing stress memorization transfer
#2576Mitigation of gate to contact capacitance in CMOS flow
#2577Method of manufacturing semiconductor device
#2578Method for fabricating semiconductor device with thin gate spacer
#2579Self-aligned process for nanotube/nanowire FETs
#2580Methods for forming cascode current mirrors
#2581SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2582Short channel LV, MV, and HV CMOS devices
#2583SEMICONDUCTOR DEVICE HAVING ISLAND REGION
#2584Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
#2585Air break for improved silicide formation with composite caps
#2586Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
#2587STRESS ENHANCED MOS TRANSISTOR AND METHODS FOR ITS FABRICATION
#2588Semiconductor device and method of fabricating isolation region
#2589Structure to improve MOS transistor on-breakdown voltage
#2590Selective incorporation of charge for transistor channels
#2591Semiconductor device structure having enhanced performance FET device
#2592Process for reactive ion etching a layer of diamond like carbon
#2593Semiconductor devices and methods of manufacture thereof
#2594Nonvolatile memory devices having metal silicide nanocrystals, methods of forming metal silicide nanocrystals, and methods of forming nonvolatile memory devices having metal silicide nanocrystals
#2595Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device
#2596SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
#2597CMOS image sensor and fabricating method thereof
#2598Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
#2599Process method to optimize fully silicided gate (FUSI) thru PAI implant
#2600Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
#2601Semiconductor device and method of fabricating the same
#2602MRAM Memory conditioning
#2603Ensuring migratability of circuits by masking portions of the circuits while improving performance of other portions of the circuits
#2604FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HAVING INCREASED INTRINSIC STRESS
#2605Semiconductor device and method of fabricating the same
#2606Semiconductor device fabrication method and semiconductor device fabricated thereby
#2607Semiconductor device and a method of manufacturing the same
#2608SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2609METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2610SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#2611Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
#2612METHOD OF FORMING DOUBLE GATE DIELECTRIC LAYERS AND SEMICONDUCTOR DEVICE HAVING THE SAME
#2613Method for manufacturing insulated gate field effect transistor
#2614Semiconductor device comprising transistor and capacitor and method of manufacturing the same
#2615Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same
#2616Polysilicon gate formation by in-situ doping
#2617Polysilicon gate formation by in-situ doping
#2618Method for forming fully silicided gate electrodes and unsilicided poly resistors
#2619Semiconductor device
#2620Semiconductor devices with dual-metal gate structures and fabrication methods thereof
#2621Field effect transistors including variable width channels and methods of forming the same
#2622Source and drain structures and manufacturing methods
#2623FinFET for device characterization
#2624Low threshold voltage semiconductor device with dual threshold voltage control means
#2625Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers
#2626Low noise transistor and method of making same
#2627Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device
#2628SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
#2629METALLIC SILICIDE FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2630METHOD OF FORMING CARBON-CONTAINING SILICON NITRIDE LAYER
#2631Semiconductor device including liner insulating film
#2632Hybrid process for forming metal gates
#2633Integrated circuit system employing stress-engineered spacers
#2634Method of fabricating semiconductor devices having a gate silicide
#2635MOSFET package
#2636Semiconductor devices and methods of forming the same
#2637Method for manufacturing semiconductor device
#2638Simulator of ion implantation and method for manufacturing semiconductor device
#2639Embedded stressed nitride liners for CMOS performance improvement
#2640Method of trimming a hard mask layer, method for fabricating a gate in a MOS transistor, and a stack for fabricating a gate in a MOS transistor
#2641Semiconductor device and manufacturing method thereof, and liquid crystal display device
#2642METHOD OF FABRICATING MOSFET DEVICE
#2643Advanced activation approach for MOS devices
#2644Sidewall spacer pullback scheme
#2645METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#2646Method for fabricating three-dimensional control-gate architecture for single poly EPROM memory devices in planar CMOS technology
#2647SOURCE/DRAIN EXTENSIONS IN NMOS DEVICES
#2648Method for fabricating a semiconductor device
#2649Semiconductor device and method of fabricating the same
#2650Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement
#2651Semiconductor Device and Manufacturing Method Thereof
#2652Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device
#2653Tunable gate electrode work function material for transistor applications
#2654Stressed barrier plug slot contact structure for transistor performance enhancement
#2655HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
#2656Method for Manufacturing CMOS Image Sensor
#2657Method of removing a spacer, method of manufacturing a metal-oxide-semiconductor transistor device, and metal-oxide-semiconductor transistor device
#2658Method of fabricating semiconductor device
#2659SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2660Production method of semiconductor device and semiconductor device
#2661Method for fabricating semiconductor device
#2662Semiconductor device and method for manufacturing the same
#2663Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
#2664Manufacturing method of semiconductor device
#2665RADIATION IMMUNITY OF INTEGRATED CIRCUITS USING BACKSIDE DIE CONTACT AND ELECTRICALLY CONDUCTIVE LAYERS
#2666SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE AND DRAIN AND METHOD OF MANUFACTURING THE SAME
#2667SEMICONDUCTOR DEVICE
#2668Semiconductor device having side wall spacers
#2669MOS TRANSISTOR, METHOD FOR MANUFACTURING THE MOS TRANSISTOR, CMOS SEMICONDUCTOR DEVICE INCLUDING THE MOS TRANSISTOR, AND SEMICONDUCTOR DEVICE INCLUDING THE CMOS SEMICONDUCTOR DEVICE
#2670Semiconductor ESD device and method of making same
#2671MASK LAYER TRIM METHOD USING CHARGED PARTICLE BEAM EXPOSURE
#2672Method of forming tensile stress films for NFET performance enhancement
#2673Method of removing photoresist and method of manufacturing a semiconductor device
#2674Edge-triggered flip-flop design
#2675Semiconductor device and method for fabricating the same
#2676Semiconductor Device and Method of Forming the Same
#2677Semiconductor device
#2678SEMICONDUCTOR DEVICE HAVING A SILICIDED GATE ELECTRODE AND METHOD OF MANUFACTURE THEREFOR
#2679MODULATED TRIGGER DEVICE
#2680FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
#2681Fabrication method of semiconductor device
#2682Method of manufacturing double diffused drains in semiconductor devices
#2683Method of fabricating semiconductor device
#2684Short channel effect engineering in MOS device using epitaxially carbon-doped silicon
#2685Nickel alloy silicide including indium and a method of manufacture therefor
#2686HOT CARRIER DEGRADATION REDUCTION USING ION IMPLANTATION OF SILICON NITRIDE LAYER
#2687High-Dielectric-Constant Film, Field-Effect Transistor and Semiconductor Integrated Circuit Device Using the Same, and Method for Producing High-Dielectric-Constant Film
#2688CMOS AND MOS DEVICE
#2689Semiconductor device and method for fabricating the same
#2690Semiconductor device
#2691Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology
#2692SEMICONDUCTOR DEVICES WITH BURIED ISOLATION REGIONS
#2693Semiconductor device fabrication method and semiconductor device
#2694MOSFET STRUCTURE WITH ULTRA-LOW K SPACER
#2695MOSFET Device With Localized Stressor
#2696Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
#2697Hafnium lanthanide oxynitride films
#2698FET STRUCTURE USING DISPOSABLE SPACER AND STRESS INDUCING LAYER
#2699Method for Fabricating Semiconductor Device
#2700Methods for fabricating a stress enhanced MOS circuit