208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration
#3302Method for manufacturing semiconductor device
#3303Method of manufacturing semiconductor device
#3304SiGe nickel barrier structure employed in a CMOS device to prevent excess diffusion of nickel used in the silicide material
#3305TRANSISTOR HAVING HIGH MOBILITY CHANNEL AND METHODS
#3306Semiconductor device and method for manufacturing semiconductor device
#3307Methods of forming a semiconductor device having a metal gate electrode and associated devices
#3308Semiconductor device comprising gate electrode having arsenic and phosphorus
#3309DUAL SILICIDE PROCESS TO IMPROVE DEVICE PERFORMANCE
#3310Semiconductor device and manufacturing method thereof
#3311Inhibiting growth under high dielectric constant films
#3312Nickel salicide process and method of fabricating a semiconductor device using the same
#3313Method of fabricating semiconductor device including removing impurities from silicon nitride layer
#3314Laser activation of implanted contact plug for memory bitline fabrication
#3315Forming dual metal complementary metal oxide semiconductor integrated circuits
#3316Thermal treatment equipment and method for heat-treating
#3317NFET and PFET devices and methods of fabricating same
#3318EFUSE STRUCTURE
#3319Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
#3320MOS field effect transistor and manufacture method therefor
#3321Metal oxide semiconductor field effect transistor
#3322Thin film transistor
#3323Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivity
#3324Semiconductor device and method for fabricating the same
#3325Method of manufacturing semiconductor device having notched gate MOSFET
#3326Method for manufacturing one-time electrically programmable read only memory
#3327Self-forming metal silicide gate for CMOS devices
#3328CMOS transistors and methods of forming same
#3329Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same
#3330Method of manufacturing a semiconductor device and semiconductor device obatined with such a method
#3331Semiconductor device and method of manufacturing the same
#3332Self-aligned process for nanotube/nanowire FETs
#3333HOT CARRIER DEGRADATION REDUCTION USING ION IMPLANTATION OF SILICON NITRIDE LAYER
#3334Semiconductor device and a method of manufacturing thereof
#3335Transistor structure having stressed regions of opposite types underlying channel and source/drain regions
#3336Semiconductor transistor having a stressed channel
#3337Devices and methods of preventing plasma charging damage in semiconductor devices
#3338Method of fabricating a field effect transistor having improved junctions
#3339Method for manufacturing high voltage transistor
#3340Semiconductor device having high voltage MOS transistor and fabrication method thereof
#3341Geometrically optimized spacer to improve device performance
#3342Method for forming a transistor for reducing a channel length
#3343Semiconductor device and method for fabricating the same
#3344Semiconductor device having silicide-blocking layer and fabrication method thereof
#3345Semiconductor device including carrier accumulation layers
#3346MOS transistor and method of manufacturing the same
#3347Method of manufacturing MOS transistor
#3348Method of sequentially forming silicide layer and contact barrier in semiconductor integrated circuit device
#3349Method of fabricating MOS transistor
#3350Semiconductor device and method for manufacturing the same
#3351Method of forming double gate dielectric layers and semiconductor device having the same
#3352Semiconductor integrated circuit device and a methodof manufacturing the same
#3353Semiconductor device and fabricating method thereof
#3354Doped nitride film, doped oxide film and other doped films
#3355Semiconductor device and method for fabricating the same
#3356Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device
#3357Strained silicon, gate engineered Fermi-FETs
#3358Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereof
#3359Semiconductor device and method of forming same
#3360Semiconductor device and fabricating method thereof
#3361Method of manufacturing semiconductor device
#3362Semiconductor device and fabrication method thereof
#3363Poly open polish process
#3364Method of removing spacers and fabricating MOS transistor
#3365Application of post-pattern resist trim for reducing pocket-shadowing in SRAMs
#3366Manufacture method of MOS semiconductor device having extension and pocket
#3367Method for fabricating dual work function metal gates
#3368Nitrogen treatment to improve high-k gate dielectrics
#3369Semiconductor device and method for manufacturing the same
#3370Semiconductor integrated circuit device and method for the same
#3371Transistor and method for manufacturing thereof
#3372Thin film transistor and method for manufacturing the same
#3373Replacement gate with TERA cap
#3374Semiconductor circuitry constructions
#3375Method for metal gate structure for MOS devices
#3376Low parasitic capacitance Schottky diode
#3377Method of making MOSFET device with localized stressor
#3378Semiconductor device including overcurrent protection element
#3379Semiconductor device and method for fabricating the same
#3380Gate defined Schottky diode
#3381Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
#3382MOS transistor and manufacturing method thereof
#3383Semiconductor device and method for manufacturing the same
#3384Method for manufacturing a silicided gate electrode using a buffer layer
#3385Method for forming halo/pocket implants through an L-shaped sidewall spacer
#3386CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance
#3387Bi-directional power switch
#3388Manufacturing method of insulating film and semiconductor device
#3389Method for controlling lattice defects at junction and method for forming LDD or S/D regions of CMOS device
#3390Method of forming a field effect transistor having a stressed channel region
#3391Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate
#3392High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
#3393High performance CMOS devices and methods for making same
#3394Implanting carbon to form P-type source drain extensions
#3395Microelectronic device and a method for its manufacture
#3396Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same
#3397High-voltage metal-oxide-semiconductor transistor
#3398Triple well structure and method for manufacturing the same
#3399Method of making fully silicided gate electrode
#3400Ultra-shallow arsenic junction formation in silicon germanium
#3401Semiconductor device employing an extension spacer and a method of forming the same
#3402Method of manufacturing semiconductor device and the semiconductor device manufactured by the method
#3403Self-aligned low-k gate cap
#3404Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitance
#3405METHOD OF MANUFACTURING SEMICONDUCTOR MOS TRANSISTOR DEVICE
#3406System and method for improved dopant profiles in CMOS transistors
#3407Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication process
#3408Semiconductor structure having a metallic buffer layer and method for forming
#3409Method of manufacturing semiconductor MOS transistor device
#3410Advanced disposable spacer process by low-temperature high-stress nitride film for sub-90NM CMOS technology
#3411Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same
#3412Method for treating base oxide to improve high-K material deposition
#3413CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure
#3414Method of fabricating MOS transistor by millisecond anneal
#3415Semiconductor device having enhanced breakdown voltage
#3416High voltage lateral diffused MOSFET device
#3417Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device
#3418SEMICONDUCTOR DEVICE HAVING METAL SILICIDE AND METHOD OF MAKING THE SAME
#3419Solid phase epitaxy recrystallization by laser annealing
#3420Method of manufacturing semiconductor device
#3421Semiconductor device and method of manufacturing the same
#3422Semiconductor device having misfet using high dielectric constant gate insulation film and method for fabricating the same
#3423Laterally diffused metal oxide semiconductor device and method of forming the same
#3424Method of forming shallow doped junctions having a variable profile gradation of dopants
#3425Method for fabricating electronic device
#3426Method for fabricating doped polysilicon lines
#3427Source/drain extensions having highly activated and extremely abrupt junctions
#3428Inducing strain in the channels of metal gate transistors
#3429High voltage MOS transistor with up-retro well
#3430Semiconductor device and method for fabricating the same
#3431Structure and method for manufacturing MOSFET with super-steep retrograded island
#3432Integration scheme to improve NMOS with poly cap while mitigating PMOS degradation
#3433Semiconductor device
#3434Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus
#3435Method for fabricating semiconductor device
#3436Atomic layer deposition of high dielectric constant gate dielectrics
#3437NFET and PFET devices and methods of fabricating same
#3438Selective post-doping of gate structures by means of selective oxide growth
#3439Semiconductor device and its manufacturing method
#3440Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
#3441Using oxynitride spacer to reduce parasitic capacitance in CMOS devices
#3442Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#3443Strained silicon device manufacturing method
#3444Thermal treatment of nitrided oxide to improve negative bias thermal instability
#3445Metal gate structure for MOS devices
#3446Method of forming abrupt source drain metal gate transistors
#3447Methods of forming threshold voltage implant regions
#3448Methods of forming gate electrodes in semiconductor devices
#3449Methods of forming semiconductor constructions
#3450Semiconductor device and method for fabricating the same
#3451MOS transistor and fabrication thereof
#3452Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein
#3453Method for improving the thermal stability of silicide
#3454Transistor and method of manufacturing the same
#3455Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow
#3456MOSFET structure with multiple self-aligned silicide contacts
#3457Metal oxide semiconductor device for electrostatic discharge protection circuit
#3458Method of manufacturing a semiconductor device having trenches for isolation and capacitor
#3459Integrating n-type and p-type metal gate transistors
#3460Methods for elimination of arsenic based defects in semiconductor devices with isolation regions
#3461Method of manufacturing a semiconductor device with a strained channel
#3462Low threshold voltage PMOS apparatus and method of fabricating the same
#3463Semiconductor device and method of manufacturing the same
#3464FEOL/MEOL metal resistor for high end CMOS
#3465CMOS device with improved performance and method of fabricating the same
#3466Semiconductor device and method for fabricating the same
#3467Metal-germanium physical vapor deposition for semiconductor device defect reduction
#3468Increased drive current by isotropic recess etch
#3469METHOD FOR FABRICATING METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH SELECTIVE EPITAXIAL GROWTH FILM
#3470Method for manufacturing a semiconductor device having silicided regions
#3471Methods, systems and structures for forming improved transistors
#3472Method of incorporating stress into a transistor channel by use of a backside layer
#3473Method for manufacturing improved sidewall structures for use in semiconductor devices
#3474Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devices
#3475Method of manufacturing silicon nitride film, method of manufacturing semiconductor device, and semiconductor device
#3476Method and system for dopant containment
#3477Transistor fabrication methods using dual sidewall spacers
#3478Transistor fabrication methods using reduced width sidewall spacers
#3479Method for making a semiconductor device comprising a superlattice dielectric interface layer
#3480Metalgate electrode for PMOS transistor
#3481Semiconductor device having spacer pattern and method of forming the same
#3482Method for fabricating integrated circuits having both high voltage and low voltage devices
#3483Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof
#3484Wafer processing apparatus & methods for depositing cobalt silicide
#3485Silicide formation using a low temperature anneal process
#3486Low leakage MOS transistor
#3487Strained semiconductor device structures
#3488Method for fabricating a p-type shallow junction using diatomic arsenic
#3489Semiconductor device comprising a superlattice dielectric interface layer
#3490Semiconductor device including insulated gate type transistor and insulated gate type capacitance having protruded portions
#3491Formation of standard voltage threshold and low voltage threshold MOSFET devices
#3492Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
#3493High voltage FET gate structure
#3494III-V and II-VI compounds as template materials for growing germanium containing film on silicon
#3495Device and method using isotopically enriched silicon
#3496Multi-layer reducible sidewall process
#3497DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
#3498MOS transistor having a work-function-dominating layer
#3499Semiconductor device and method of fabricating the same
#3500Strained Si/SiGe structures by ion implantation
#3501Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
#3502Method of fabricating high-voltage MOS device
#3503Semiconductor devices and methods of manufacturing the same
#3504Method of manufacture for a trench isolation structure having an implanted buffer layer
#3505Method of forming metal/high-k gate stacks with high mobility
#3506Modulated trigger device
#3507Semiconductor device including a superlattice having at least one group of substantially undoped layers
#3508Low capacitance FET for operation at subthreshold voltages
#3509Semiconductor devices with high voltage tolerance
#3510Semiconductor device and method of manufacturing same
#3511Depletion-merged FET design in bulk silicon
#3512Methods of manufacturing semiconductor devices
#3513Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
#3514Replacement gate process for making a semiconductor device that includes a metal gate electrode
#3515Semiconductor device and manufacturing method thereof
#3516High-voltage MOS device and fabrication thereof
#3517Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
#3518Versatile system for limiting electric field degradation of semiconductor structures
#3519Reduced dielectric constant spacer materials integration for high speed logic gates
#3520Method for manufacturing a transistor
#3521MOSFET structure with high mechanical stress in the channel
#3522Embedded stressed nitride liners for CMOS performance improvement
#3523Versatile system for limiting electric field degradation of semiconductor structures
#3524Fabrication methods for compressive strained-silicon and transistors using the same
#3525Method for controlling voiding and bridging in silicide formation
#3526Implantation of deuterium in MOS and DRAM devices
#3527Method of inducing stresses in the channel region of a transistor
#3528CMOS transistor using high stress liner layer
#3529Method for improving transistor performance through reducing the salicide interface resistance
#3530Stepped tip junction with spacer layer
#3531Thermal anneal process for strained-Si devices
#3532Method of manufacturing a semiconductor device
#3533Source/drain extension implant process for use with short time anneals
#3534Method of fabricating semiconductor device
#3535Method of fabricating semiconductor device
#3536Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region
#3537Offset spacer formation for strained channel CMOS transistor
#3538Semiconductor device having halo implanting regions
#3539Semiconductor devices and methods of manufacturing the same
#3540Semiconductor integrated circuit device having deposited layer for gate insulation
#3541Semiconductor device and method of making the same
#3542Method of fabricating semiconductor device
#3543Nickel alloy salicide transistor structure and method for manufacturing same
#3544Semiconductor device and manufacturing method thereof
#3545Manufacture of semiconductor device with selective amorphousizing
#3546Method for forming a gate electrode having a metal
#3547Method of forming sidewall spacers
#3548Method of manufacturing a microelectronic device with electrode perturbing sill
#3549Method of improving residue and thermal characteristics of semiconductor device
#3550Method of manufacturing semiconductor device
#3551Semiconductor device with spacer having batch and non-batch layers
#3552Method for fabricating semiconductor device
#3553Tri-gate low power device and method for manufacturing the same
#3554Formation of standard voltage threshold and low voltage threshold MOSFET devices
#3555Method of forming wing gate transistor for integrated circuits
#3556Capacitor design in ESD circuits for eliminating current leakage
#3557Isolation structure with nitrogen-containing liner and methods of manufacture
#3558Forming a retrograde well in a transistor to enhance performance of the transistor
#3559Semiconductor device and method for fabricating the same
#3560Slim spacer device and manufacturing method
#3561Dual-oxide transistors for the improvement of reliability and off-state leakage
#3562Method for manufacturing semiconductor device having thick insulating layer under gate side walls
#3563Transistor structure having an oxidation inhibition layer and method of forming the same
#3564Semiconductor device having a fully silicided gate electrode and method of manufacture therefor
#3565Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
#3566Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
#3567Tri-gate low power device and method for manufacturing the same
#3568Method of manufacturing metal-oxide-semiconductor transistor
#3569Reduction of channel hot carrier effects in transistor devices
#3570Novel process method of source drain spacer engineering to improve transistor capacitance
#3571Interface improvement by stress application during oxide growth through use of backside films
#3572Integrated circuit metal silicide method
#3573Spacer approach for CMOS devices
#3574Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof
#3575Method for fabricating semiconductor device
#3576Transistor with dopant-bearing metal in source and drain
#3577Method of forming polysilicon gate structures with specific edge profiles for optimization of LDD offset spacing
#3578Semiconductor device having NMOSFET and PMOSFET and manufacturing method thereof
#3579Method of forming silicon nitride film and method of manufacturing semiconductor device
#3580Strained silicon structure
#3581Semiconductor device with shallow trench isolation and its manufacture method
#3582Semiconductor device manufacture method capable of supressing gate impurity penetration into channel
#3583Implanting carbon to form P-type drain extensions
#3584Source drain and extension dopant concentration
#3585Semiconductor device having a silicided gate electrode and method of manufacture therefor
#3586Manufacturing method of the semiconductor device and the semiconductor device
#3587Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#3588Method of fabricating semiconductor device
#3589Methods of forming semiconductor circuitry
#3590Strained-channel semiconductor structure and method of fabricating the same
#3591Semiconductor device having a graded LDD region and fabricating method thereof
#3592Triple-gate MOSFET transistor and methods for fabricating the same
#3593Semiconductor transistor having a stressed channel
#3594Semiconductor device including MOSFET having band-engineered superlattice
#3595Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
#3596Semiconductor device including MOS field effect transistor having offset spacers or gate sidewall films on either side of gate electrode and method of manufacturing the same
#3597Semiconductor device with cobalt silicide contacts
#3598Method to form a metal silicide gate device
#3599Semiconductor device and its manufacturing method
#3600Semiconductor device and fabricating method thereof