208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Transistor design
#902Semiconductor device and method of manufacturing the same
#903Semiconductor integrated circuit apparatus and manufacturing method for same
#904Epitaxial channel with a counter-halo implant to improve analog gain
#905Manufacture of a variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#906MOSFET structure with T-shaped epitaxial silicon channel
#907Capacitor having a top compressive polycrystalline plate
#908Method For Manufacturing Semiconductor Device
#909Low cost demos transistor with improved CHC immunity
#910Fringe capacitance reduction for replacement gate CMOS
#911Lateral MOS power transistor having front side drain electrode and back side source electrode
#912Deep collector vertical bipolar transistor with enhanced gain
#913NPN heterojunction bipolar transistor in CMOS flow
#914Semiconductor devices including multilayer source/drain stressors and methods of manufacturing the same
#915Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance
#916Active regions with compatible dielectric layers
#917Stratified gate dielectric stack for gate dielectric leakage reduction
#918Transistor, resistance variable memory device including the same, and manufacturing method thereof
#919Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
#920Multi-gate semiconductor devices
#921Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
#922Semiconductor device having semiconductor layers with different thicknesses
#923Replacement gate MOSFET with a high performance gate electrode
#924Semiconductor device and manufacturing method thereof
#925High voltage device fabricated using low-voltage processes
#926FinFET with bottom SiGe layer in source/drain
#927Method of manufacturing semiconductor device
#928Polysilicon design for replacement gate technology
#929Mechanism for forming semiconductor device with gate
#930Semiconductor device and manufacturing method thereof
#931Method for manufacturing semiconductor device
#932Semiconductor device and method for fabricating the same
#933Semiconductor structure and method for manufacturing the same
#934Device having improved radiation hardness and high breakdown voltages
#935Transistor device with improved source/drain junction architecture and methods of making such a device
#936Aqueous cleaning techniques and compositions for use in semiconductor device manufacture
#937Advanced forming method and structure of local mechanical strained transistor
#938Method for improving transistor performance through reducing the salicide interface resistance
#939Semiconductor device and method for manufacturing the same
#940Simplified gate-first HKMG manufacturing flow
#941Mergeable semiconductor device with improved reliability
#942METAL OXIDE SEMICONDUCTOR (MOS) DEVICE AND MANUFACTURING METHOD THEREOF
#943Raised epitaxial LDD in MuGFETs
#944Semiconductor device and fabrication method thereof
#945Jog design in integrated circuits
#946Method for manufacturing insulated gate field effect transistor
#947Method of manufacturing semiconductor device having metal gate
#948Semiconductor device
#949Semiconductor device and method of forming the same
#950Semiconductor device having metal gate and manufacturing method thereof
#951Efficient integration of CMOS with poly resistor
#952Semiconductor device
#953MOS transistor and method for manufacturing MOS transistor
#954Semiconductor device and manufacturing method thereof
#955Semiconductor device having silicide on gate sidewalls in isolation regions
#956On-SOI integrated circuit equipped with a device for protecting against electrostatic discharges
#957MOS device having shalow trench isolations (STI) with different tapered portions
#958Semiconductor device structure useful for bulk transistor and method of manufacturing the same
#959High uniformity screen and epitaxial layers for CMOS devices
#960MOS transistor having a gate dielectric with multiple thicknesses
#961STRUCTURE FOR IMPROVED CONTACT RESISTANCE AND EXTENSION DIFFUSION CONTROL
#962Transistors with high concentration of boron doped germanium
#963Semiconductor devices with asymmetric halo implantation and method of manufacture
#964Semiconductor devices having a gate conductor and methods of manufacturing the same
#965Semiconductor devices having a gate stack
#966High electron mobility transistor and method of manufacturing the same
#967Tin doped III-V material contacts
#968Defect-Free SiGe source/drain formation by epitaxy-free process
#969Method for fabricating semiconductor device
#970Conductive diffusion barrier structure for ohmic contacts
#971Method for forming metal semiconductor alloys in contact holes and trenches
#972Methods of forming silicide regions and resulting MOS devices
#973Semiconductor device and method for manufacturing the same
#974P type MOSFET
#975Self aligned contact with improved robustness
#976Metal gate transistor and integrated circuits
#977Semiconductor device including metal silicide layer and method for manufacturing the same
#978Semiconductor integrated circuit devices including gates having connection lines thereon
#979Gate encapsulation achieved by single-step deposition
#980Semiconductor device having local buried oxide
#981MOS devices with non-uniform P-type impurity profile
#982Contact for high-k metal gate device
#983III-V compound semiconductor device having metal contacts and method of making the same
#984Dual L-shaped drift regions in an LDMOS device and method of making the same
#985PARTIALLY RECESSED CHANNEL CORE TRANSISTORS IN REPLACEMENT GATE FLOW
#986Embedded polysilicon resistor in integrated circuits formed by a replacement gate process
#987Semiconductor device
#988Flatband shift for improved transistor performance
#989Metal oxide semiconductor field effect transistor having variable thickness gate dielectric
#990Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
#991Self-aligned contact structure for replacement metal gate
#992CMOS fabrication
#993Method for forming metal semiconductor alloys in contact holes and trenches
#994Thin film transistor and active matrix organic light emitting diode assembly
#995Method of fabricating high voltage device
#996Semiconductor device and manufacture method thereof
#997Method of forming a semiconductor device comprising titanium silicon oxynitride
#998Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure
#999Doped protection layer for contact formation
#1000Semiconductor device and fabrication method thereof
#1001SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#1002Gate electrode and gate contact plug layouts for integrated circuit field effect transistors
#1003Integrated circuits and methods of design and manufacture thereof
#1004Semiconductor device
#1005MOSFETs with multiple dislocation planes
#1006Structure and methods of improving reliability of non-volatile memory devices
#1007Vertical power MOSFET and methods for forming the same
#1008One time programmable memory cell capable of reducing leakage current and preventing slow bit response
#1009Semiconductor device
#1010Transistors with an extension region having strips of differing conductivity type
#1011Integrated circuitry comprising transistors with broken up active regions
#1012Methods of annealing after deposition of gate layers
#1013Semiconductor device with notched gate
#1014Low noise and high performance LSI device
#1015Heat treatment method and heat treatment apparatus
#1016Self-aligned contacts for replacement metal gate transistors
#1017Avalanche energy handling capable III-nitride transistors
#1018Semiconductor device comprising oxide semiconductor
#1019Semiconductor device and a method of manufacturing the same
#1020Semiconductor device and method of manufacturing semiconductor device
#1021Method for manufacturing semiconductor device
#1022Integrated circuits having source/drain structure
#1023Semiconductor device and method for manufacturing the same
#1024Buffer layer on semiconductor devices
#1025MOS transistor and fabrication method
#1026System and method of sensing current in a power semiconductor device
#1027MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
#1028Semiconductor device and manufacturing method thereof
#1029Oxide-nitride-oxide stack having multiple oxynitride layers
#1030Semiconductor device and manufacturing method thereof
#1031Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)
#1032Methods for forming protection layers on sidewalls of contact etch stop layers
#1033RF switch on high resistive substrate
#1034Semiconductor device
#1035FinFET with bottom SiGe layer in source/drain
#1036Semiconductor structure profile
#1037Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier
#1038SiGe surface passivation by germanium cap
#1039Low thermal budget schemes in semiconductor device fabrication
#1040Multilayer dielectric structures for semiconductor nano-devices
#1041Multilayer dielectric structures for semiconductor nano-devices
#1042SACRIFICIAL REPLACEMENT EXTENSION LAYER TO OBTAIN ABRUPT DOPING PROFILE
#1043Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
#1044Semiconductor device having metal gate and manufacturing method thereof
#1045Tunnel effect transistor
#1046Integrated circuit metal gate structure having tapered profile
#1047Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe
#1048Strained isolation regions
#1049Semiconductor device and fabricating method thereof
#1050TRANSISTOR, RESISTANCE VARIABLE MEMORY DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
#1051Semiconductor device and method of manufacturing semiconductor device
#1052Methodology and apparatus for tuning driving current of semiconductor transistors
#1053Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereof
#1054Semiconductor device and manufacturing method thereof
#1055Laterally diffused metal oxide semiconductor device and method of forming the same
#1056Semiconductor device and method of manufacturing the same
#1057N-channel double diffusion MOS transistor with P-type buried layer under N-type drift layer, and semiconductor composite device
#1058Method of forming gate dielectric layer and method of fabricating semiconductor device
#1059Semiconductor device having modified profile metal gate
#1060Native PMOS device with low threshold voltage and high drive current and method of fabricating the same
#1061Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof
#1062Method for fabricating MOS transistors
#1063Multigate metal oxide semiconductor devices and fabrication methods
#1064High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit
#1065Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
#1066High-K metal gate
#1067Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof
#1068High temperature gate replacement process
#1069Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same
#1070Semiconductor device structures including strained transistor channels
#1071Source/drain extension control for advanced transistors
#1072Advanced transistors with punch through suppression
#1073Methods of forming a sidewall spacer having a generally triangular shape and a semiconductor device having such a spacer
#1074Epitaxial grown extremely shallow extension region
#1075Lateral double-diffused MOSFET
#1076Semiconductor and manufacturing method thereof
#1077Manufacturing method of semiconductor device
#1078Semiconductor devices including a stressor in a recess and methods of forming the same
#1079Semiconductor device, semiconductor integrated circuit device, and electronic device
#1080Method and apparatus for selectively improving integrated device performance
#1081Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance
#1082Semiconductor device including low-K dielectric cap layer for gate electrodes and related methods
#1083Insulative cap for borderless self-aligning contact in semiconductor device
#1084Carbon and nitrogen doping for selected PMOS transistors on an integrated circuit
#1085Insulative cap for borderless self-aligning contact in semiconductor device
#1086Self-aligned contact structure for replacement metal gate
#1087Method of forming a semiconductor structure including a wet etch process for removing silicon nitride
#1088Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current
#1089Manufacturing method for semiconductor device having metal gate
#1090Lightly doped source/drain last method for dual-epi integration
#1091I-SHAPED GATE ELECTRODE FOR IMPROVED SUB-THRESHOLD MOSFET PERFORMANCE
#1092Method for protecting a gate structure during contact formation
#1093Method for forming doping region and method for forming MOS
#1094Silicon on nothing devices and methods of formation thereof
#1095Semiconductor device having a metal gate and fabricating method thereof
#1096Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection
#1097Integrated circuit metal gate structure
#1098SEMICONDUCTOR DEVICE
#1099Method for manufacturing semiconductor device by selectively removing end portions of gate dielectric layer and then filling end portions with dielectric layer
#1100Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure
#1101Semiconductor device
#1102Deeply depleted MOS transistors having a screening layer and methods thereof
#1103Extended Source-Drain MOS Transistors And Method Of Formation
#1104Methods of forming gate dielectric material
#1105Method of fabricating semiconductor device
#1106Self aligned contact with improved robustness
#1107Metal oxide semiconductor (MOS) device with locally thickened gate oxide
#1108INTEGRATED CIRCUITS HAVING BORON-DOPED SILICON GERMANIUM CHANNELS AND METHODS FOR FABRICATING THE SAME
#1109Integration of trench MOS with low voltage integrated circuits
#1110Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material
#1111Hydrogen passivation of integrated circuits
#1112Compressive stress transfer in an interlayer dielectric of a semiconductor device by providing a bi-layer of superior adhesion and internal stress
#1113Method of fabricating an interconnection structure in a CMOS comprising a step of forming a dummy electrode
#1114Replacement gate electrode with planar work function material layers
#1115MOS transistors having reduced leakage well-substrate junctions
#1116MOS TRANSISTOR AND PROCESS THEREOF
#1117Reducing or eliminating pre-amorphization in transistor manufacture
#1118Native devices having improved device characteristics and methods for fabrication
#1119Semiconductor device and fabricating method thereof
#1120Semiconductor device and method of fabricating the same
#1121Semiconductor device and manufacturing method of semiconductor device
#1122Methods of forming transistor devices with high-k insulation layers and the resulting devices
#1123Fluctuation resistant FDSOI transistor with implanted subchannel
#1124Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance
#1125Semiconductor device
#1126Pocket counterdoping for gate-edge diode leakage reduction
#1127Power transistor with high voltage counter implant
#1128Salicide process
#1129Indium, carbon and halogen doping for PMOS transistors
#1130Methods for introducing carbon to a semiconductor structure
#1131Semiconductor structure and method for forming the same
#1132Wafer alignment system and method
#1133Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor
#1134MOSFET having source region formed in a double wells region
#1135III-V compound semiconductor device having metal contacts and method of making the same
#1136Scavenging metal stack for a high-K gate dielectric
#1137Scavenging metal stack for a high-K gate dielectric
#1138Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
#1139Semiconductor device fabrication methods
#1140Semiconductor device having silicide on gate sidewalls in isolation regions
#1141Semiconductor device and manufacturing method of the same
#1142Semiconductor device and method for fabricating semiconductor device
#1143Gate structure having lightly doped region
#1144REPLACEMENT METAL GATE PROCESSING WITH REDUCED INTERLEVEL DIELECTRIC LAYER ETCH RATE
#1145Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant process
#1146Contact for high-k metal gate device
#1147Semiconductor device
#1148Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
#1149Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
#1150Vertical power MOSFET and methods for forming the same
#1151SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF
#1152Semiconductor device manufacturing method
#1153Semiconductor structure with improved channel stack and method for fabrication thereof
#1154Semiconductor device having gradient doping profile
#1155Schottky diodes having metal gate electrodes and methods of formation thereof
#1156METHODS OF FORMING CONDUCTIVE CONTACTS FOR A SEMICONDUCTOR DEVICE
#1157Method for improving transistor performance through reducing the salicide interface resistance
#1158METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#1159Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
#1160INCREASED TRANSISTOR PERFORMANCE BY IMPLEMENTING AN ADDITIONAL CLEANING PROCESS IN A STRESS LINER APPROACH
#1161Semiconductor structure and method of forming the same
#1162Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#1163Semiconductor device having a drain-gate isolation portion
#1164Aqueous cleaning techniques and compositions for use in semiconductor device manufacturing
#1165Stratified gate dielectric stack for gate dielectric leakage reduction
#1166Semiconductor device including work function adjusting element, and method of manufacturing the same
#1167Semicondcutor device comprising transistor
#1168STRATIFIED GATE DIELECTRIC STACK FOR GATE DIELECTRIC LEAKAGE REDUCTION
#1169Gate electrodes with notches and methods for forming the same
#1170Semiconductor device with reduced contact resistance and method of manufacturing thereof
#1171Mosfet package
#1172Device and method for forming sharp extension region with controllable junction depth and lateral overlap
#1173Device and method for forming sharp extension region with controllable junction depth and lateral overlap
#1174Method for dual energy implantation for ultra-shallow junction formation of MOS devices
#1175Techniques for using material substitution processes to form replacement metal gate electrodes of semiconductor devices with self-aligned contacts
#1176Method for Manufacturing Semiconductor Device
#1177Low extension dose implants in SRAM fabrication
#1178Strained structure of semiconductor device
#1179Semiconductor device and method for manufacturing the same
#1180Semiconductor Device and Method for Manufacturing the Same
#1181Semiconductor device and method of manufacturing the same
#1182Replacement Gate With Reduced Gate Leakage Current
#1183MOSFET with selective dopant deactivation underneath gate
#1184Low extension dose implants in SRAM fabrication
#1185High-K gate electrode structure formed after transistor fabrication by using a spacer
#1186Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#1187CMOS device and method for manufacturing the same
#1188INTEGRATED CIRCUIT (IC) HAVING TSVS AND STRESS COMPENSATING LAYER
#1189Contact resistance reduction employing germanium overlayer pre-contact metalization
#1190INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE
#1191Source/drain profile for FinFET
#1192Semiconductor device and fabrication method thereof
#1193METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH REDUCED ELECTRICAL PARAMETER VARIATION
#1194Use of band edge gate metals as source drain contacts
#1195USE OF BAND EDGE GATE METALS AS SOURCE DRAIN CONTACTS
#1196Semiconductor Device and Method of Manufacturing the Same
#1197Method of forming gate dielectric layer and method of fabricating semiconductor device
#1198Thin film resistor structure
#1199Method of hybrid high-k/metal-gate stack fabrication
#1200Metal oxide semiconductor (MOS) device with locally thickened gate oxide