208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Semiconductor device including an epitaxy region
#602One time programmable non-volatile memory device
#603Semiconductor device comprising gate structure and doped gate spacer
#604MOS devices with non-uniform p-type impurity profile
#605Compact anti-fuse memory cell using CMOS process
#606Integrated circuit having chemically modified spacer surface
#607Semiconductor device with profiled work-function metal gate electrode and method of making
#608Manufacturing method of semiconductor structure for improving quality of epitaxial layers
#609Transistor device with reduced hot carrier injection effect
#610Semiconductor device and method for manufacturing the same
#611Gate spacer and methods of forming
#612Semiconductor nonvolatile memory element
#613Semiconductor device and fabrication method thereof
#614MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts
#615Method of forming semiconductor device
#616Semiconductor device and fabrication method thereof
#617ONE-TIME PROGRAMMABLE MEMORY CELL CAPABLE OF REDUCING LEAKAGE CURRENT AND PREVENTING SLOW BIT RESPONSE, AND METHOD FOR PROGRAMMING A MEMORY ARRAY COMPRISING THE SAME
#618Tipless transistors, short-tip transistors, and methods and circuits therefor
#619Semiconductor devices including a stressor in a recess and methods of forming the same
#620Gate structure, semiconductor device and the method of forming semiconductor device
#621SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE CAPABLE OF REDUCING A LEAKAGE CURRENT
#622Semiconductor apparatus, system, and method of manufacturing semiconductor apparatus
#623High voltage transistor
#624Raised epitaxial LDD in MuGFETs and methods for forming the same
#625Semiconductor devices and methods of fabricating the same
#626FET with local isolation layers on S/D trench sidewalls
#627Manufacture method of AMOLED back plate and structure thereof
#628Semiconductor structure with high-voltage and low-voltage CMOS devices and method for manufacturing the same
#629Embedded SiGe process for multi-threshold PMOS transistors
#630Gate-grounded metal oxide semiconductor device
#631Integrated circuitry and methods of forming transistors
#632Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)
#633Method for manufacturing semiconductor device
#634Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof
#635Barrier layer for dielectric layers in semiconductor devices
#636Contact resistance reduction employing germanium overlayer pre-contact metalization
#637Method of manufacturing semiconductor device
#638Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protection
#639Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation
#640Forming silicide regions and resulting MOS devices
#641Advanced transistors with punch through suppression
#642Semiconductor devices and methods of manufacturing the same
#643Reducing or eliminating pre-amorphization in transistor manufacture
#644Semiconductor device for radio frequency switch, radio frequency switch, and radio frequency module
#645Semiconductor device and method of manufacturing the same
#646Semiconductor device having embedded strain-inducing pattern and method of forming the same
#647Manufacturing method of high-voltage metal-oxide-semiconductor transistor
#648Method for fabricating a transistor device with a tuned dopant profile
#649Buried channel deeply depleted channel transistor
#650Contact plug without seam hole and methods of forming the same
#651FinFET device for device characterization
#652Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance
#653Semiconductor device
#654Semiconductor device
#655Low power semiconductor transistor structure and method of fabrication thereof
#656Semiconductor structure and fabrication method thereof
#657Semiconductor device and a method of manufacturing the same
#658Low noise and high performance LSI device
#659Column IV transistors for PMOS integration
#660Integrated circuits and manufacturing methods thereof
#661Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region
#662High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit
#663High power RF switches using multiple optimized transistors
#664Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
#665Method and structure for integrating photonics with CMOs
#666Heterogeneous source drain region and extension region
#667Transistor with contacted deep well region
#668N-well/P-well strap structures
#669High voltage semiconductor device and method of manufacturing the same
#670Low temperature poly-silicon thin film transistor and method for manufacturing the same
#671Semiconductor device and method of forming the same
#672Low temperature polysilicon thin film transistor and method for fabricating same
#673Method for forming metal semiconductor alloys in contact holes and trenches
#674Method for improving transistor performance through reducing the salicide interface resistance
#675Method for improving transistor performance through reducing the salicide interface resistance
#676High-K metal gate
#677Semiconductor devices with superlattice layers providing halo implant peak confinement and related methods
#678Semiconductor devices with superlattice and punch-through stop (PTS) layers at different depths and related methods
#679Electromagnetic shield and associated methods
#680MOS transistor and fabrication method
#681Method of manufacturing semiconductor integrated circuit device
#682Semiconductor device and method of forming the same
#683N-type fin field-effect transistor and fabrication method thereof
#684Semiconductor device including transistor having offset insulating layers
#685Selective germanium P-contact metalization through trench
#686Integration of analog transistor
#687Stratified gate dielectric stack for gate dielectric leakage reduction
#688Unit pixel for image sensor
#689Dual function hybrid memory cell
#690Oxide-nitride-oxide stack having multiple oxynitride layers
#691MOSFET with reduced resistance
#692Oxide-nitride-oxide stack having multiple oxynitride layers
#693Contact for high-k metal gate device
#694Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate extends commonly over a transistor, an element region, and a separation region
#695Semiconductor transistor and flash memory, and manufacturing method thereof
#696Semiconductor device comprising transistor including oxide semiconductor
#697Epitaxial channel with a counter-halo implant to improve analog gain
#698Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage
#699Tipless transistors, short-tip transistors, and methods and circuits therefor
#700Semiconductor device
#701NPN heterojunction bipolar transistor in CMOS flow
#702Integrated circuits and methods of design and manufacture thereof
#703Driver for normally on III-nitride transistors to get normally-off functionality
#704Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
#705Jog design in integrated circuits
#706Semiconductor device having a fin at a side of a semiconductor body
#707Method for manufacturing semiconductor device
#708Semiconductor device and fabrication method thereof
#709SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#710Semiconductor device and method of manufacturing the same
#711Modulating germanium percentage in MOS devices
#712Poly-silicon thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device
#713Method for FinFET device
#714Reduced current leakage semiconductor device
#715Semiconductor device and method of manufacturing the same
#716Reduced current leakage semiconductor device
#717Semiconductor device and manufacturing method thereof
#718Drain extended MOS transistors with split channel
#719Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
#720Method of forming a semiconductor device having a GaNFET, an overvoltage clamping component, and a voltage dropping component
#721Medium voltage MOSFET device
#722Medium high voltage MOSFET device
#723Transistor device with gate control layer undercutting the gate dielectric
#724Selector device for a non-volatile memory cell
#725Metal-oxide-semiconductor transistor device and manufacturing method thereof
#726Fringe capacitance reduction for replacement gate CMOS
#727Integrated circuit having chemically modified spacer surface
#728Integrated circuit devices and methods
#729Implant profiling with resist
#730Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
#731SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THEREOF
#732SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#733MOSFETs with multiple dislocation planes
#734High voltage device fabricated using low-voltage processes
#735Semiconductor device
#736Contact etch stop layers of a field effect transistor
#737Advanced forming method and structure of local mechanical strained transistor
#738FinFET and method for forming the same
#739Superlattice materials and applications
#740METHOD FOR FABRICATING LIGHTLY DOPED DRAIN AREA, THIN FILM TRANSISTOR AND ARRAY SUBSTRATE
#741Transistor structure with reduced parasitic side wall characteristics
#742Radio frequency semiconductor device
#743Semiconductor structure and fabrication method thereof
#744Advanced transistors with punch through suppression
#745MOSFET structure and method for manufacturing same
#746NON-VOLATILE PUSH-PULL NON-VOLATILE MEMORY CELL HAVING REDUCED OPERATION DISTURB AND PROCESS FOR MANUFACTURING SAME
#747Non-volatile push-pull non-volatile memory cell having reduced operation disturb and process for manufacturing same
#748MOSFET structure and manufacturing method thereof
#749Method for fabricating a transistor device with a tuned dopant profile
#750High breakdown voltage microelectronic device isolation structure with improved reliability
#751Integrated circuit devices including source/drain extension regions and methods of forming the same
#752Semiconductor devices including an etch stop pattern and a sacrificial pattern with coplanar upper surfaces and a gate and a gap fill pattern with coplanar upper surfaces
#753Semiconductor device
#754FinFET with bottom SiGe layer in source/drain
#755MOSFET STRUCTURE AND METHOD OF MANUFACTURING SAME
#756Semiconductor devices and methods for manufacturing the same
#757Device having improved radiation hardness and high breakdown voltages
#758High breakdown voltage microelectronic device isolation structure with improved reliability
#759Gate electrodes with notches and methods for forming the same
#760Structure and method for semiconductor device
#761CMOS devices having dual high-mobility channels
#762Semiconductor device
#763Methods for fabricating radiation hardened MOS devices
#764One-time programmable memory cell capable of reducing leakage current and preventing slow bit response, and method for programming a memory array comprising the same
#765Semiconductor transistor having a stressed channel
#766Metal-oxide-semiconductor field-effect transistor with metal-insulator-semiconductor contact structure to reduce schottky barrier
#767Semiconductor devices with improved source/drain contact resistance and methods of manufacturing the same
#768Method of fabricating semiconductor device isolation structure
#769Semiconductor device including magneto-resistive device
#770METHODS AND APPARATUSES FOR FORMING MULTIPLE RADIO FREQUENCY (RF) COMPONENTS ASSOCIATED WITH DIFFERENT RF BANDS ON A CHIP
#771Efficient main spacer pull back process for advanced VLSI CMOS technologies
#772Dual metal gate electrode for reducing threshold voltage
#773Semiconductor device structure with conductive pillar and conductive line and method for forming the same
#774Semiconductor device comprising contact structures with protection layers formed on sidewalls of contact etch stop layers
#775Integrated circuitry and methods of forming transistors
#776Method of forming regions with hot and cold implants
#777Semiconductor devices including a stressor in a recess and methods of forming the same
#778Semiconductor devices having gate structures and methods of manufacturing the same
#779Semiconductor device and a method of manufacturing the same
#780Semiconductor devices including a stressor in a recess and methods of forming the same
#781SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#782Semiconductor device and method of manufacturing the same
#783Semiconductor device having modified profile metal gate
#784Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
#785Semiconductor structure
#786Semiconductor device and a method of manufacturing the same
#787NATIVE PMOS DEVICE WITH LOW THRESHOLD VOLTAGE AND HIGH DRIVE CURRENT AND METHOD OF FABRICATING THE SAME
#788CMOS fabrication
#789Through via structure and method
#790Semiconductor devices including a stressor in a recess and methods of forming the same
#791Semiconductor devices and methods of manufacture thereof
#792Process design to improve transistor variations and performance
#793Semiconductor memory cell and driver circuitry with gate oxide formed simultaneously
#794Metal-insensitive epitaxy formation
#795Circuit element including a layer of a stress-creating material providing a variable stress
#796Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device
#797Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulator
#798Etching method, etching solution used in same, and production method for semiconductor substrate product
#799Method for fabricating semiconductor device
#800Transistor having a vertical channel
#801Semiconductor device having a wide-gap semiconductor layer in an insulating trench
#802Semiconductor device having control conductors
#803High-voltage metal-oxide semiconductor transistor
#804Selective polysilicon doping for gate induced drain leakage improvement
#805Transistor having a vertical channel
#806Integration of analog transistor
#807Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
#808Low cost demos transistor with improved CHC immunity
#809STRIP-SHAPED GATE TUNNELING FIELD EFFECT TRANSISTOR USING COMPOSITE MECHANISM AND FABRICATION METHOD THEREOF
#810N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite device
#811Transistor design
#812Field-effect transistor and fabricating method thereof
#813Integrated circuit having chemically modified spacer surface
#814Method of forming a semiconductor device comprising titanium silicon oxynitride
#815Semiconductor device with strained channels
#816Heterogeneous source drain region and extension region
#817Raised epitaxial LDD in MuGFETs and methods for forming the same
#818ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND DRIVE CIRCUIT
#819RF switch on high resistive substrate
#820Integrated fabrication of semiconductor devices
#821MOSFET with selective dopant deactivation underneath gate
#822Integrated circuit product with a gate height registration structure
#823Manufacturing method of graphene modulated high-K oxide and metal gate MOS device
#824I-shaped gate electrode for improved sub-threshold MOSFET performance
#825Semiconductor device and manufacturing method thereof
#826Doped protection layer for contact formation
#827Semiconductor device and method for manufacturing same
#828Semiconductor device
#829Semiconductor device
#830Reliability in mergeable semiconductor devices
#831Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)
#832Stable nickel silicide formation with fluorine incorporation and related IC structure
#833Integrated circuit having a contact etch stop layer
#834Semiconductor device including SIU butted junction to reduce short-channel penalty
#835Semiconductor device and method for fabricating the same
#836Semiconductor device and manufacturing method of semiconductor device
#837Methods of forming MIS contact structures for semiconductor devices and the resulting devices
#838Methods and apparatus for quantum point contacts in CMOS processes
#839Methods and apparatus for artificial exciton in CMOS processes
#840Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
#841Transistor devices with high-k insulation layers
#842Silicon on nothing devices and methods of formation thereof
#843Method of fabricating a transistor using contact etch stop layers
#844Method for fabricating a transistor with reduced junction leakage current
#845Semiconductor device having metal gate and manufacturing method thereof
#846Method for manufacturing semiconductor device
#847Methods for introducing carbon to a semiconductor structure and structures formed thereby
#848Method for manufacturing semiconductor device and semiconductor device
#849Semiconductor device
#850High voltage CMOS with triple gate oxide
#851Method for manufacturing semiconductor device, ion beam etching device, and control device
#852Source/drain profile for FinFET
#853Low noise and high performance LSI device
#854Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer
#855SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#856Dual pocket approach in PFETs with embedded SI-GE source/drain
#857Semiconductor device and fabrication method thereof
#858Mechanism for forming metal gate structure
#859Semiconductor device and method for fabricating the same
#860Semiconductor device and method of manufacturing same
#861Semiconductor device
#862Device having sloped gate profile and method of manufacture
#863Methods for manufacturing semiconductor devices
#864High voltage field effect transistors and circuits utilizing the same
#865Structure and method for semiconductor device
#866Contact silicide having a non-angular profile
#867Epitaxial channel
#868Diode-based ESD concept for DEMOS protection
#869Contact plug without seam hole and methods of forming the same
#870Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
#871Conformity control for metal gate stack
#872Low-cost semiconductor device manufacturing method
#873Method of manufacturing semiconductor device
#874High voltage drain-extended MOSFET having extra drain-OD addition
#875Semiconductor structure having a metal gate with side wall spacers
#876Semiconductor transistor device with dopant profile
#877Method of forming a semiconductor structure
#878III-V compound semiconductor device having metal contacts and method of making the same
#879One time programmable memory cell capable of reducing leakage current and preventing slow bit response
#880Semiconductor device and formation thereof
#881FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING
#882Reduced variation MOSFET using a drain-extension-last process
#883Semiconductor device and method of manufacturing the same
#884METHOD OF FORMING AN INSULATOR LAYER IN A SEMICONDUCTOR STRUCTURE AND STRUCTURES RESULTING THEREFROM
#885Side gate assist in metal gate first process
#886Semiconductor device
#887Modulating germanium percentage in MOS devices
#888REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL
#889SEMICONDUCTOR DEVICE AND METHOD OF REMOVING SPACERS ON SEMICONDUCTOR DEVICE
#890Method for forming avalanche energy handling capable III-nitride transistors
#8911T SRAM/DRAM
#892Embedded source or drain region of transistor with laterally extended portion
#893Integrated circuit and manufacturing method thereof
#894High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor
#895Semiconductor device and method of manufacturing the same
#896Fin-type semiconductor device and manufacturing method
#897Semiconductor device, related manufacturing method, and related electronic device
#898Contact resistance reduction employing germanium overlayer pre-contact metalization
#899Transistor having replacement gate and epitaxially grown replacement channel region
#900Semiconductor device having high-K gate dielectric layer