208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Method of forming a field effect transistor having source/drain material over insulative material
#1202MULTIPLE STEP IMPLANT PROCESS FOR FORMING SOURCE/DRAIN REGIONS ON SEMICONDUCTOR DEVICES
#1203POLY RESISTOR DESIGN FOR REPLACEMENT GATE TECHNOLOGY
#1204Contact etch stop layers of a field effect transistor
#1205Methods for fabricating integrated circuits with narrow, metal filled openings
#1206Semiconductor device and method for fabricating semiconductor device
#1207Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus
#1208Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles
#1209Short-Resistant Metal-Gate MOS Transistor and Method of Forming the Transistor
#1210Epitaxial channel formation methods and structures
#1211Semiconductor process
#1212Lateral double-diffused MOSFET
#1213Replacement metal gate structures providing independent control on work function and gate leakage current
#1214Modifying work function in PMOS devices by counter-doping
#1215Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
#1216METHODS OF FABRICATING INTEGRATED CIRCUITS WITH THE ELIMINATION OF VOIDS IN INTERLAYER DIELECTICS
#1217Low OHMIC contacts
#1218Semiconductor device
#1219Flatband shift for improved transistor performance
#1220Integration of trench MOS with low voltage integrated circuits
#1221Semiconductor devices having encapsulated stressor regions and related fabrication methods
#1222Performing treatment on stressors
#1223Methods of Forming a Replacement Gate Electrode With a Reentrant Profile
#1224Integration of non-volatile charge trap memory devices and logic CMOS devices
#1225Replacement gate MOSFET with a high performance gate electrode
#1226Self-aligned contact for replacement gate devices
#1227Oxide-nitride-oxide stack having multiple oxynitride layers
#1228Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices
#1229METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1230Semiconductor device having a metal gate and fabricating method thereof
#1231Replacement gate having work function at valence band edge
#1232Source-drain extension formation in replacement metal gate transistor device
#1233SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSISTOR DEVICE
#1234Source/drain extension control for advanced transistors
#1235Electronic device including a tunnel structure
#1236Semiconductor device, semiconductor integrated circuit, SRAM, and method for producing Dt-MOS transistor
#1237CMOS devices with metal gates and methods for forming the same
#1238Semiconductor device and method of manufacturing the same
#1239Manufacturing method for semiconductor device having metal gate
#1240METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1241SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT WITH HIGH-K/METAL GATE WITHOUT HIGH-K DIRECT CONTACT WITH STI
#1242Semiconductor device and manufacturing method thereof
#1243N-well/P-well strap structures
#1244Multi-gate semiconductor devices
#1245Silicide contacts having different shapes on regions of a semiconductor device
#1246Semiconductor device manufacturing method
#1247CMOS device for reducing radiation-induced charge collection and method for fabricating the same
#1248Prevention of ILD Loss in Replacement Gate Technologies by Surface Treatmen
#1249HIGH PERFORMANCE LOW POWER BULK FET DEVICE AND METHOD OF MANUFACTURE
#1250MOSFET structure with T-shaped epitaxial silicon channel
#1251Method for forming a semiconductor transistor device with optimized dopant profile
#1252METHODS FOR REMOVING SILICON NITRIDE SPACER, FORMING TRANSISTOR AND FORMING SEMICONDUCTOR DEVICES
#1253Method for fabricating small-scale MOS device
#1254High voltage CMOS with triple gate oxide
#1255Semiconductor device having metal gate and manufacturing method thereof
#1256Semiconductor device and method of manufacturing the same
#1257Manufacturing Processes for Field Effect Transistors Having Strain-Induced Chanels
#1258Methodology and apparatus for tuning driving current of semiconductor transistors
#1259CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME
#1260Semiconductor structure
#1261MOSFETs with multiple dislocation planes
#1262Threshold mismatch and IDDQ reduction using split carbon co-implantation
#1263Method for manufacturing semiconductor device
#1264Fin field-effect transistor structure and manufacturing process thereof
#1265Method of manufacturing a semiconductor device and the semiconductor device
#1266Fin field-effect transistor structure
#1267Semiconductor device and method of manufacturing the same
#1268Semiconductor device and manufacturing method thereof
#1269METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATES SEPARATELY
#1270Semiconductor device and semiconductor device manufacturing method
#1271Semiconductor device fabrication methods with enhanced control in recessing processes
#1272Semiconductor device with strained channels induced by high-k capping metal layers
#1273Semiconductor device and method of manufacturing semiconductor device
#1274Methods of forming conductive contacts with reduced dimensions
#1275Contact for high-K metal gate device
#1276High mobility enhancement mode FET
#1277MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufacture
#1278Top gate thin-film transistor, display device, and electronic apparatus
#1279METHOD FOR PREPARING SPACER TO REDUCE COUPLING INTERFERENCE IN MOSFET
#1280Methods and Systems for Forming Implanted Doped Regions for a Semiconductor Device Using Reduced Temperature Ion Implantation
#1281CMOS structure having multiple threshold voltage devices
#1282CMOS structure having multiple threshold voltage devices
#1283Semiconductor device and manufacturing method therefor
#1284SRAM cell having recessed storage node connections and method of fabricating same
#1285METHOD FOR RADIATION HARDENING AN INTEGRATED CIRCUIT
#1286Semiconductor device
#1287Semiconductor device
#1288SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE
#1289SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE
#1290Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET)
#1291Semiconductor device with dual metal silicide regions and methods of making same
#1292Replacement gate compatible eDRAM transistor with recessed channel
#1293SEMICONDUCTOR DEVICE
#1294DEVICES AND METHODS TO IMPROVE CARRIER MOBILITY
#1295Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same
#1296Compressive polycrystalline silicon film and method of manufacture thereof
#1297Semiconductor contact barrier
#1298Method of fabricating a carbon-free dielectric layer over a carbon-doped dielectric layer
#1299Semiconductor Structure And Method For Manufacturing The Same
#1300Strained channel field effect transistor and the method for fabricating the same
#1301SHALLOW TRENCH ISOLATION STRUCTURE AND FABRICATING METHOD THEREOF
#1302Semiconductor device with a buried stressor
#1303METHOD FOR MANUFACTURING TRANSISTOR AND SEMICONDUCTOR DEVICE
#1304Formation of a channel semiconductor alloy by forming a nitride based hard mask layer
#1305Semiconductor structure and fabricating method thereof
#1306SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1307Method for making a disilicide
#1308Integrated circuit
#1309Full silicidation prevention via dual nickel deposition approach
#1310Method of forming a buffer layer
#1311SEMICONDUCTOR DEVICE
#1312Bipolar transistor in bipolar-CMOS technology
#1313Semiconductor device having insulating film with different stress levels in adjacent regions and manufacturing method thereof
#1314Fabrication of field-effect transistors with atomic layer doping
#1315FinFET field-effect transistors with atomic layer doping
#1316Plasma etching method, method for producing semiconductor device, and plasma etching device
#1317Semiconductor device having a metal gate electrode stack
#1318Wiring structure, display apparatus, and semiconductor device
#1319METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1320Manufacturing method for metal gate
#1321Semiconductor device and a method of manufacturing the same
#1322Replacement gate electrode with planar work function material layers
#1323Metal oxide semiconductor transistor and method of manufacturing the same
#1324High performance HKMG stack for gate first integration
#1325Semiconductor device and method of manufacturing semiconductor device
#1326Semiconductor device and manufacturing method thereof
#1327Method of improving replacement metal gate fill
#1328Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer
#1329Methods of anneal after deposition of gate layers
#1330Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having same
#1331Semiconductor device having metal gate and manufacturing method thereof
#1332SEMICONDUCTOR DEVICE
#1333Interconnection structure for N/P metal gates
#1334Semiconductor device exhibiting reduced parasitics and method for making same
#1335METHOD FOR SELF ALIGNED METAL GATE CMOS
#1336High performance MOSFET
#1337Semiconductor devices with low junction capacitances
#1338SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1339Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor
#1340Metal gate fill by optimizing etch in sacrificial gate profile
#1341ENHANCING MOSFET PERFORMANCE BY OPTIMIZING STRESS PROPERTIES
#1342Semiconductor device including metal silicide layer and method for manufacturing the same
#1343Methods for stressing transistor channels of a semiconductor device structure
#1344Method of manufacturing semiconductor device
#1345Manufacturing method for metal gate using ion implantation
#1346Method for fabricating metal-oxide-semiconductor field-effect transistor
#1347METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A COBALT SILICIDE
#1348Semiconductor device and method of manufacturing the same
#1349Phase change memory device having an improved word line resistance, and methods of making same
#1350Method and structure for a transistor having a relatively large threshold voltage variation range and for a random number generator incorporating multiple essentially identical transistors having such a large threshold voltage variation range
#1351Semiconductor device and manufacturing method therefor
#1352Inversion thickness reduction in high-k gate stacks formed by replacement gate processes
#1353Semiconductor device and method for manufacturing the same
#1354TRANSISTOR HAVING ALUMINUM METAL GATE AND METHOD OF MAKING THE SAME
#1355Semiconductor device with lower metal layer thickness in PMOS region
#1356Semiconductor device
#1357Method for fabricating semiconductor device
#1358Method for manufacturing a semiconductor device
#1359Structure of metal gate and fabrication method thereof
#1360SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
#1361Metal gate stack formation for replacement gate technology
#1362METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#1363Electromagnetic shield and associated methods
#1364Semiconductor device including a field effect transistor
#1365Method of removing gate cap materials while protecting active area
#1366TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#1367Semiconductor device and manufacturing method thereof
#1368Semiconductor device having gradient doping profile
#1369Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same
#1370Method of forming metal gate structure
#1371Process for depositing electrode with high effective work function
#1372Semiconductor device including monos-type memory cell
#1373PMOS threshold voltage control by germanium implantation
#1374Manufacturing method for semiconductor device
#1375High-k/metal gate transistor with L-shaped gate encapsulation layer
#1376Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device
#1377SEMICONDUCTOR DEVICES WITH REDUCED STI TOPOGRAPHY BY USING CHEMICAL OXIDE REMOVAL
#1378METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF
#1379Self-aligned metal gate CMOS with metal base layer and dummy gate structure
#1380Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same
#1381Semiconductor Device and Manufacturing Method Thereof
#1382Method of forming spacers that provide enhanced protection for gate electrode structures
#1383Fabrication methods of integrated semiconductor structure
#1384Localized compressive strained semiconductor
#1385METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH ENHANCED CHANNEL STRESS
#1386Post-planarization UV curing of stress inducing layers in replacement gate transistor fabrication
#1387Field Effect Transistor Device With Self-Aligned Junction
#1388SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1389Structures and methods of improving reliability of non-volatile memory devices
#1390Semiconductor device comprising an antiferroelectric gate insulating film
#1391Semiconductor device and method for fabricating semiconductor device
#1392Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film
#1393Semiconductor device
#1394Method of increasing the germanium concentration in a silicon-germanium layer and semiconductor device comprising same
#1395INVERSION THICKNESS REDUCTION IN HIGH-K GATE STACKS FORMED BY REPLACEMENT GATE PROCESSES
#1396Semiconductor device
#1397SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1398Semiconductor device and manufacturing method thereof
#1399Method of fabricating a semiconductor device including a gate having a plurality of fingers extended over a plurality of isolation regions
#1400Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
#1401MOS SEMICONDUCTOR DEVICE AND METHODS FOR ITS FABRICATION
#1402Semiconductor device and manufacturing method thereof
#1403Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer
#1404MANUFACTURING METHOD FOR METAL GATE STRUCTURE
#1405METHODS OF FABRICATING FIELD EFFECT TRANSISTORS INCLUDING TITANIUM NITRIDE GATES OVER PARTIALLY NITRIDED OXIDE AND DEVICES SO FABRICATED
#1406Method of fabricating a plurality of gate structures
#1407METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#1408Method for forming semiconductor structure
#1409METAL GATE STRUCTURE
#1410Semiconductor device and manufacturing method of the semiconductor device
#1411Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer
#1412Stabilized metal silicides in silicon-germanium regions of transistor elements
#1413Method of removing high-K dielectric layer on sidewalls of gate structure
#1414Semiconductor device exhibiting reduced parasitics and method for making same
#1415Oxygen treatment of replacement work-function metals in CMOS transistor gates
#1416METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF
#1417Schottky diodes having metal gate electrodes and methods of formation thereof
#1418Electrical fuse formed by replacement metal gate process
#1419SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1420Method for increasing penetration depth of drain and source implantation species for a given gate height
#1421Method for manufacturing a high-performance semiconductor structure with a replacement gate process and a stress memorization technique
#1422Replacement-gate-compatible programmable electrical antifuse
#1423Semiconductor device and method of manufacturing the same
#1424METHODS FOR FABRICATING SEMICONDUCTOR DEVICES INCLUDING METAL SILICIDE
#1425Manufacturing method of semiconductor integrated circuit device
#1426Method for forming metal gate
#1427Method of manufacturing semiconductor device having metal gates
#1428Herbal extracts and flavor systems for oral products and methods of making the same
#1429FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
#1430Semiconductor device
#1431Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation
#1432Fin field-effect transistor structure and manufacturing process thereof
#1433SEMICONDUCTOR STRUCTURE WITH A STRESSED LAYER IN THE CHANNEL AND METHOD FOR FORMING THE SAME
#1434Manufacturing method of semiconductor device having semiconductor layers with different thicknesses
#1435Method for protecting a gate structure during contact formation
#1436Method of fabricating semiconductor device
#1437Method of fabricating a sealing structure for high-k metal gate
#1438Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features
#1439Metal gate structure and manufacturing method thereof
#1440Semiconductor structure with improved channel stack and method for fabrication thereof
#1441Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
#1442Plasma doping method and manufacturing method of semiconductor device
#1443SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
#1444Filling narrow openings using ion beam etch
#1445SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage
#1446Mosfet package
#1447Method for fabricating an NMOS transistor
#1448Optimized channel implant for a semiconductor device and method of forming the same
#1449Semiconductor device and method for making the same
#1450PD SOI device with a body contact structure
#1451Semiconductor structure and method for manufacturing the same
#1452Epitaxially Grown Extension Regions for Scaled CMOS Devices
#1453Method of manufacturing strained source/drain structures
#1454Compressive polycrystalline silicon film and method of manufacture thereof
#1455SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1456Semiconductor device having insulating film with increased tensile stress and manufacturing method thereof
#1457Semiconductor device
#1458METHODS OF CONTROLLING TUNGSTEN FILM PROPERTIES
#1459SEALED AIR GAP FOR SEMICONDUCTOR CHIP
#1460METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
#1461Methods of forming silicide regions and resulting MOS devices
#1462Static RAM cell design and multi-contact regime for connecting double channel transistors
#1463Semiconductor device and method of manufacturing semiconductor device
#1464High voltage multigate device and manufacturing method thereof
#1465Semiconductor devices having encapsulated stressor regions and related fabrication methods
#1466ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION
#1467Method for making dual silicide and germanide semiconductors
#1468SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#1469Asymmetric channel MOSFET
#1470Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area
#1471Method and structure for shallow trench isolation to mitigate active shorts
#1472Semiconductor device structure and method for manufacturing the same
#1473Semiconductor device and method for fabricating the same
#1474FET structures with trench implantation to improve back channel leakage and body resistance
#1475Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
#1476Method for forming metal semiconductor alloys in contact holes and trenches
#1477Semiconductor device including an epitaxy region
#1478Semiconductor device
#1479Semiconductor device and manufacturing method thereof
#1480Reducing dislocation formation in semiconductor devices through targeted carbon implantation
#1481Methods for testing unprogrammed OTP memory
#1482Semiconductor device
#1483Method of introducing strain into channel and device manufactured by using the method
#1484Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering
#1485Replacement gate with reduced gate leakage current
#1486Method for forming a semiconductor device including replacing material of dummy gate stacks with other conductive material
#1487Semiconductor device and method of manufacturing the same
#1488Method of fabricating a device using low temperature anneal processes, a device and design structure
#1489METHODS FOR FABRICATING A METAL SILICIDE LAYER AND SEMICONDUCTOR DEVICES USING THE SAME
#1490HYDROGEN PASSIVATION OF INTEGRATED CIRCUITS
#1491METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#1492Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus
#1493Semiconductor device and manufacturing method thereof
#1494Semiconductor device and method for manufacturing the same
#1495Transistor and method for forming the same
#1496Field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methods
#1497High-voltage metal-oxide-semiconductor device
#1498Transistor and method for forming the same
#1499Reduction of Defect Rates in PFET Transistors Comprising a Silicon/Germanium Semiconductor Material by Providing a Graded Germanium Concentration
#1500Semiconductor Device and Method of Forming Low Voltage MOSFET for Portable Electronic Devices and Data Processing Centers