208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy
#1502Strain Enhancement in Transistors Comprising an Embedded Strain-Inducing Semiconductor Material by Alloy Species Condensation
#1503SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1504Transistors with high concentration of boron doped germanium
#1505PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE STACKS AND AN EMBEDDED STRESSOR BY PERFORMING A SECOND EPITAXY STEP
#1506SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME
#1507HYDROGEN PASSIVATION OF INTEGRATED CIRCUITS
#1508Formation of gate dielectrics with uniform nitrogen distribution
#1509Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure
#1510Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuit
#1511Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
#1512Method for forming metal gate and MOS transistor
#1513Self-aligned contact combined with a replacement metal gate/high-K gate dielectric
#1514Self-aligned contact for replacement gate devices
#1515SEMICONDUCTOR DEVICE
#1516Device having adjustable channel stress and method thereof
#1517Source/drain extension control for advanced transistors
#1518Semiconductor device having metal gate and manufacturing method thereof
#1519Methods of forming integrated circuits
#1520Replacement metal gate structures providing independent control on work function and gate leakage current
#1521SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1522III-V compound semiconductor material passivation with crystalline interlayer
#1523Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material
#1524Self aligned silicided contacts
#1525CMOS devices with reduced short channel effects
#1526Integrated circuits and fabrication methods thereof
#1527Borderless contact for replacement gate employing selective deposition
#1528Method of manufacturing junction barrier schottky diode with dual silicides
#1529Localized compressive strained semiconductor
#1530Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof
#1531Gate etch optimization through silicon dopant profile change
#1532Replacement gate having work function at valence band edge
#1533INTERMIXED SILICIDE FOR REDUCTION OF EXTERNAL RESISTANCE IN INTEGRATED CIRCUIT DEVICES
#1534Semiconductor structure with multi-layer contact etch stop layer structure
#1535Germanium field effect transistors and fabrication thereof
#1536Patterning methodology for uniformity control
#1537Method of manufacturing a semiconductor device
#1538CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same
#1539Replacement gate MOSFET with a high performance gate electrode
#1540METHOD OF FABRICATING SEMICONDUCTOR DEVICE
#1541Quantum electro-optical device using CMOS transistor with reverse polarity drain implant
#1542Integrated circuit having a contact etch stop layer and method of forming the same
#1543SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF
#1544Methods of forming gate dielectric material
#1545Method of fabricating semiconductor device isolation structure
#1546METHOD OF FORMING SILICIDE FOR CONTACT PLUGS
#1547FET structures with trench implantation to improve back channel leakage and body resistance
#1548Device with aluminum surface protection
#1549Superior integrity of a high-K gate stack by forming a controlled undercut on the basis of a wet chemistry
#1550SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME
#1551SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
#1552Transistor level routing
#1553Method for manufacturing semiconductor structure
#1554Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method
#1555Method of manufacturing semiconductor device
#1556Method of manufacturing semiconductor device
#1557Ultra-shallow junction MOSFET having a high-k gate dielectric and in-situ doped selective epitaxy source/drain extensions and a method of making same
#1558Semiconductor device and method of manufacturing semiconductor device
#1559Semiconductor device including high-k/metal gate electrode
#1560Semiconductor device and method of manufacturing semiconductor device
#1561High voltage metal-oxide-semiconductor transistor with stable threshold voltage and related manufacturing method
#1562Semiconductor device and method of manufacturing the same
#1563Field effect transistor
#1564Semiconductor device manufacturing method
#1565Method of manufacturing a semiconductor device
#1566SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#1567Integrated circuits and methods of design and manufacture thereof
#1568Field effect transistors having improved breakdown voltages and methods of forming the same
#1569Method and apparatus for protection of an anti-fuse element in a high-voltage integrated circuit
#1570Stressed barrier plug slot contact structure for transistor performance enhancement
#1571SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE DEVICE
#1572TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
#1573Nonvolatile Memory Device and Method of Manufacturing the Same
#1574Semiconductor device and manufacturing method thereof
#1575SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES
#1576Method for Manufacturing Contacts for a Semiconductor Device, and Semiconductor Device Having Such Contacts
#1577High performance low power bulk FET device and method of manufacture
#1578SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#1579SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1580SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#1581Semiconductor device production method
#1582Semiconductor device and manufacturing method thereof
#1583Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacer
#1584Semiconductor Integrated Circuit Device Including an Epitaxial Layer
#1585Transistors having a control gate and one or more conductive structures
#1586METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#1587Metal gate transistor and method for fabricating the same
#1588Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment
#1589Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers
#1590Programmable FETs using Vt-shift effect and methods of manufacture
#1591Semiconductor device and method of manufacturing the same
#1592Circuit and system of aggregated area anti-fuse in CMOS processes
#1593Field Effect Transistor Device With Self-Aligned Junction
#1594Semiconductor device and related method of fabrication
#1595APPARATUS WITH CAPACITIVE COUPLING AND ASSOCIATED METHODS
#1596Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach
#1597METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE
#1598Method for fabricating semiconductor device
#1599Methods of fabricating MOS transistors having recesses with elevated source/drain regions
#1600SEMICONDUCTOR DEVICE
#1601N-well/P-well strap structures
#1602Semiconductor device, semiconductor integrated circuit, SRAM, and method for producing Dt-MOS transistor
#1603ESD protection device and method for fabricating the same
#1604Method for introducing channel stress and field effect transistor fabricated by the same
#1605Contact etch stop layers of a field effect transistor
#1606MOS transistor structure with in-situ doped source and drain and method for forming the same
#1607Method for manufacturing a semiconductor device using a nitrogen containing oxide layer
#1608METHOD AND STRUCTURE TO IMPROVE FORMATION OF SILICIDE
#1609Spacer shape engineering for void-free gap-filling process
#1610SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
#1611Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active Region
#1612Methods for manufacturing dielectric films
#1613Method for fabricating a gate structure
#1614Semiconductor device with reduced contact resistance and method of manufacturing thereof
#1615Semiconductor device with a depletion channel and method of manufacturing the same
#1616Method for forming a nickelsilicide FUSI gate
#1617BODY CONTACT DEVICE STRUCTURE AND METHOD OF MANUFACTURE
#1618Method of forming semiconductor structure
#1619Silicon wafer and method of manufacturing same
#1620Interconnection structure for N/P metal gates
#1621Si-Ge-Si SEMICONDUCTOR STRUCTURE HAVING DOUBLE GRADED JUNCTIONS AND METHOD FOR FORMING THE SAME
#1622Method for making a disilicide
#1623Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator
#1624Method for manufacturing semiconductor device
#1625Semiconductor device and method of manufacturing the same
#1626Method for fabricating field-effect transistor
#1627Semiconductor device and method for manufacturing the same in which variations are reduced and characteristics are improved
#1628SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
#1629Semiconductor device and method for manufacturing the same
#1630Asymmetric channel MOSFET
#1631METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1632Method of fabricating integrated circuit device, including removing at least a portion of a spacer
#1633Local charge and work function engineering on MOSFET
#1634Gate electrode and gate contact plug layouts for integrated circuit field effect transistors
#1635Replacement Gate Approach for High-K Metal Gate Stacks Based on a Non-Conformal Interlayer Dielectric
#1636Semiconductor device including a guard ring surrounding an inductor
#1637Semiconductor devices with asymmetric halo implantation and method of manufacture
#1638Short channel semiconductor devices with reduced halo diffusion
#1639Shallow junction formation and high dopant activation rate of MOS devices
#1640Electronic device including a tunnel structure
#1641Formation of shallow junctions by diffusion from a dielectronic doped by cluster or molecular ion beams
#1642NOVEL METHOD TO ENHANCE CHANNEL STRESS IN CMOS PROCESSES
#1643Manufacturing method of semiconductor device and semiconductor device
#1644Transistor with threshold voltage set notch and method of fabrication thereof
#1645Method for reshaping silicon surfaces with shallow trench isolation
#1646STRUCTURE AND METHOD TO REDUCE FRINGE CAPACITANCE IN SEMICONDUCTOR DEVICES
#1647Semiconductor devices fabricated by doped material layer as dopant source
#1648Ion implantation distribution generating method and simulator
#1649METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
#1650Method to form a semiconductor device having gate dielectric layers of varying thickness
#1651System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
#1652Transistor performance improving method with metal gate
#1653Semiconductor devices having stressor regions and related fabrication methods
#1654Formation of a super steep retrograde channel
#1655Method to enhance channel stress in CMOS processes
#1656Semiconductor device and manufacturing method for the same
#1657Semiconductor device
#1658Replacement gate MOSFET with self-aligned diffusion contact
#1659Method of forming metal gate structure and method of forming metal gate transistor
#1660Semiconductor device production method
#1661Method of manufacturing semiconductor device
#1662Integrated circuit device and electrostatic discharge protecting circuit thereof
#1663High-k gate dielectric and method of manufacture
#1664Multi-strained source/drain structures
#1665Integrated circuits and manufacturing methods thereof
#1666Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same
#1667Modifying work function in PMOS devices by counter-doping
#1668Lateral MOS power transistor having backside terminal electrode
#1669Semiconductor structures using replacement gate and methods of manufacture
#1670MOSFET gate and source/drain contact metallization
#1671Method of forming an insulator layer in a semiconductor structure and structures resulting therefrom
#1672Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry
#1673Reduced STI loss for superior surface planarity of embedded stressors in densely packed semiconductor devices
#1674Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devices
#1675Semiconductor Device Comprising Contact Elements and Metal Silicide Regions Formed in a Common Process Sequence
#1676Precise resistor on a semiconductor device
#1677MOS device
#1678Native devices having improved device characteristics and methods for fabrication
#1679Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach
#1680Semiconductor device and method for manufacturing the same
#1681Poly profile engineering to modulate spacer induced stress for device enhancement
#1682Field effect transistor
#1683Single gate semiconductor device
#1684Semiconductor device and method of making the same
#1685METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#1686CMOS devices having dual high-mobility channels
#1687RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE (RMG) LOGIC FLOW
#1688Semiconductor device and fabrication thereof
#1689Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage
#1690MOS devices with improved source/drain regions with SiGe
#1691Self-aligned process for nanotube/nanowire FETs
#1692SEMICONDUCTOR DEVICE WITH CARBON ATOMS IMPLANTED UNDER GATE STRUCTURE
#1693Method of manufacturing semiconductor device
#1694Semiconductor memory device
#1695Semiconductor device having metal gate and manufacturing method thereof
#1696METHODS OF FORMING STRAINED SEMICONDUCTOR CHANNELS
#1697Low power semiconductor transistor structure and method of fabrication thereof
#1698Multi-threshold voltage device and method of making same
#1699Oxide-nitride-oxide stack having multiple oxynitride layers
#1700Replacement gate approach for high-k metal gate stacks by avoiding a polishing process for exposing the placeholder material
#1701Method of manufacturing flash memory cell
#1702Image sensing device and camera
#1703METAL GATE FILL BY OPTIMIZING ETCH IN SACRIFICIAL GATE PROFILE
#1704Semiconductor device and manufacturing method thereof
#1705Method of manufacturing semiconductor device, and semiconductor device
#1706Dual sidewall spacer for seam protection of a patterned structure
#1707Semiconductor device with a buried stressor
#1708Structure and method of creating entirely self-aligned metallic contacts
#1709SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE
#1710SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#1711Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
#1712Strain preserving ion implantation methods
#1713Spacer protection and electrical connection for array device
#1714Work function adjustment with the implant of lanthanides
#1715Integration scheme for dual work function metal gates
#1716Method for fabricating a gate structure
#1717Implant damage control by in-situ C doping during sige epitaxy for device applications
#1718Method of sensing magnitude of current through semiconductor power device
#1719Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices
#1720Method of forming a semiconductor device featuring a gate stressor and semiconductor device
#1721Semiconductor device and manufacturing method thereof
#1722Penetrating implant for forming a semiconductor device
#1723Technique for enhancing transistor performance by transistor specific contact design
#1724High voltage metal oxide semiconductor device and method for making same
#1725SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND DOPANT DIFFUSION RETARDING IMPLANTS AND RELATED METHODS
#1726Integrated circuitry
#1727Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials
#1728Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
#1729Scavanging metal stack for a high-k gate dielectric
#1730METAL ELECTRODE AND SEMICONDUCTOR ELEMENT USING THE SAME
#1731Semiconductor device and manufacturing method thereof
#1732SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#1733SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#1734Thermal treatment equipment and method for heat-treating
#1735Method for forming a transistor with recessed drain and source areas and non-conformal metal silicide regions
#1736Contact formation method, semiconductor device manufacturing method, and semiconductor device
#1737Top gate thin-film transistor, display device, and electronic apparatus
#1738Power MOSFET with a gate structure of different material
#1739METHOD OF FABRICATING SEMICONDUCTOR DEVICE
#1740Gate stack for high-K/metal gate last process
#1741Lightly doped source/drain last method for dual-epi integration
#1742Self-aligned two-step STI formation through dummy poly removal
#1743ADJUSTMENT OF TRANSISTOR CHARACTERISTICS BASED ON A LATE WELL IMPLANTATION
#1744Semiconductor device formed by a replacement gate approach based on an early work function metal
#1745Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition
#1746Substrate processing method, and method of manufacturing semiconductor device
#1747Semiconductor device and semiconductor device manufacturing method
#1748Dual metal and dual dielectric integration for metal high-K FETs
#1749Method of manufacturing a junction barrier Schottky diode with dual silicides
#1750THERMAL PROCESS
#1751MANUFACTURING A SEMICONDUCTOR DEVICE
#1752NMOS TRANSISTOR WITH ENHANCED STRESS GATE
#1753Advanced forming method and structure of local mechanical strained transistor
#1754Methods and apparatus of fluorine passivation
#1755CMOSFET device with controlled threshold voltage and method of fabricating the same
#1756Semiconductor contact structure and method of fabricating the same
#1757High-voltage MOS devices having gates extending into recesses of substrates
#1758Method for fabricating semiconductor devices using stress engineering
#1759Method to form a semiconductor device having gate dielectric layers of varying thicknesses
#1760Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal
#1761Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy
#1762SILICON-BASED SEMICONDUCTOR DEVICE COMPRISING eFUSES FORMED BY AN EMBEDDED SEMICONDUCTOR ALLOY
#1763High temperature anneal for aluminum surface protection
#1764Semiconductor resistors formed at a lower height level in a semiconductor device comprising metal gates
#1765High-K metal gate electrode structures formed at different process stages of a semiconductor device
#1766Dielectric film manufacturing method
#1767Field Effect Transistors Having Gate Electrode Silicide Layers with Reduced Surface Damage
#1768Enhanced confinement of sensitive materials of a high-K metal gate electrode structure
#1769Method of fabricating a semiconductor device including high voltage and low voltage MOS devices
#1770Method for Improving the Thermal Stability of Silicide
#1771High temperature gate replacement process
#1772Semiconductor device
#1773Indium, carbon and halogen doping for PMOS transistors
#1774Low noise and high performance LSI device
#1775Carbon and nitrogen doping for selected PMOS transistor on an integrated circuit
#1776Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
#1777FORMING A CARBON CONTAINING LAYER TO FACILITATE SILICIDE STABILITY IN A SILICON GERMANIUM MATERIAL
#1778Method for dual energy implantation for ultra-shallow junction formation of MOS devices
#1779Metal gate structure
#1780Semiconductor device
#1781Transistors with an extension region having strips of differing conductivity type and methods of forming the same
#1782Methods of forming CMOS transistors with high conductivity gate electrodes
#1783SEMICONDUCTOR DEVICE HAVING A LOCALLY BURIED INSULATION LAYER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
#1784Transistor of semiconductor device and method of fabricating the same
#1785Lateral double-diffused MOSFET
#1786Stressed barrier plug slot contact structure for transistor performance enhancement
#1787NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting
#1788Method for fabricating a dual-orientation group-IV semiconductor substrate
#1789Method of manufacturing a semiconductor device having improved transistor performance
#1790Plasma doping method and manufacturing method of semiconductor device
#1791Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus
#1792Semiconductor structure having a metal gate with side wall spacers
#1793Enhancing MOSFET performance by optimizing stress properties
#1794Semiconductor contact barrier
#1795Advanced transistors with punch through suppression
#1796Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same
#1797Semiconductor device with high K dielectric control terminal spacer structure
#1798High-k/metal gate transistor with L-shaped gate encapsulation layer
#1799Inducing strain in the channels of metal gate transistors
#1800Method for obtaining quality ultra-shallow doped regions and device having same