208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Semiconductor device and manufacturing method of the same
#1802Semiconductor device
#1803Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#1804Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal deposition
#1805Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
#1806Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer
#1807Structure and method to form a thermally stable silicide in narrow dimension gate stacks
#1808HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL OF PLACEHOLDER MATERIALS IN TRANSISTORS OF DIFFERENT CONDUCTIVITY TYPE
#1809Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode
#1810Method of manufacturing semiconductor device and semiconductor device
#1811Semiconductor device and method of manufacturing semiconductor device
#1812Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier
#1813Method for improving transistor performance through reducing the salicide interface resistance
#1814Semiconductor device
#1815Semiconductor device comprising oxide semiconductor
#1816MOS devices with partial stressor channel
#1817Method to attain low defectivity fully silicided gates
#1818METHOD FOR FABRICATING P-CHANNEL FIELD-EFFECT TRANSISTOR (FET)
#1819METHOD OF CONTROLLING GATE THICKNESSES IN FORMING FUSI GATES
#1820Semiconductor device
#1821Multi-gate semiconductor devices
#1822Semiconductor device having nickel silicide layer
#1823Semiconductor device including MISFET and its manufacture method
#1824Method for fabricating a gate structure
#1825Transistor performance modification with stressor structures
#1826Semiconductor device including metal silicide layer and method for manufacturing the same
#1827METHOD FOR MANUFACTURING SEMICONDUCTOR
#1828Manufacturing method of semiconductor device
#1829Hydrogen passivation of integrated circuits
#1830Strained structure of semiconductor device
#1831Semiconductor device with trench of various widths
#1832Semiconductor structure including high voltage device
#1833Semiconductor device, method for fabricating the same and apparatus for fabricating the same
#1834Method of fabricating semiconductor device
#1835Method of Fabricating Semiconductor Device
#1836Method for fabricating semiconductor device
#1837SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1838Radio frequency device and method for fabricating the same
#1839Semiconductor device and process for producing the same
#1840THIN BODY MOSFET WITH CONDUCTING SURFACE CHANNEL EXTENSIONS AND GATE-CONTROLLED CHANNEL SIDEWALLS
#1841METHOD FOR FABRICATING MOS TRANSISTOR
#1842Semiconductor device and manufacturing method thereof
#1843Semiconductor device structure with strain layer
#1844MOS transistor for reducing short-channel effects and its production
#1845Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded island
#1846Semiconductor device and manufacturing method thereof
#1847Polysilicon design for replacement gate technology
#1848Application of millisecond heating source for surface treatment
#1849Fabrication method of semiconductor device
#1850Stress adjustment in stressed dielectric materials of semiconductor devices by stress relaxation based on radiation
#1851INTEGRATED CIRCUIT MANUFACTURING METHOD AND INTEGRATED CIRCUIT
#1852Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
#1853Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment
#1854Nonvolatile semiconductor memory device
#1855Semiconductor device with field effect transistor and manufacturing method thereof
#1856Thermal dual gate oxide device integration
#1857SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE
#1858SEMICONDUCTOR DEVICE WITH ENHANCED STRESS BY GATES STRESS LINER
#1859Reducing Local Mismatch of Devices Using Cryo-Implantation
#1860MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#1861HEAT TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1862Selective deposition of germanium spacers on nitride
#1863CMOS structure with multiple spacers
#1864Method of manufacturing a semiconductor device
#1865Methods of forming silicide regions and resulting MOS devices
#1866Method of fabricating a device using low temperature anneal processes, a device and design structure
#1867SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1868Semiconductor device and method of fabricating the same
#1869Semiconductor device and method of manufacturing the same
#1870Manufacturing method of semiconductor device
#1871Replacement-gate-compatible programmable electrical antifuse
#1872Scaling EOT by eliminating interfacial layers from high-K/metal gates of MOS devices
#1873Isolated drain-centric lateral MOSFET
#1874Method for manufacturing semiconductor substrate, and semiconductor device
#1875Method and apparatus for manufacturing semiconductor device
#1876Transistor Structure
#1877Formation of standard voltage threshold and low voltage threshold MOSFET devices
#1878Metal gate structure of a semiconductor device
#1879FIELD EFFECT TRANSISTOR HAVING CHANNEL SILICON GERMANIUM
#1880Method for improving transistor performance through reducing the salicide interface resistance
#1881METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#1882CMOS dual metal gate semiconductor device
#1883SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#1884Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
#1885Semiconductor structure and method of forming the same
#1886Shallow extension regions having abrupt extension junctions
#1887Phase change memory device having an improved word line resistance, and methods of making same
#1888Scavenging metal stack for a high-k gate dielectric
#1889Semiconductor device having a plurality of phosphorus-doped silicon carbide layers
#1890Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric
#1891Method for manufacturing semiconductor device
#1892METHOD FOR IMPROVING THE THERMAL STABILITY OF SILICIDE
#1893Semiconductor device having a stress-inducing layer between channel region and source and drain regions
#1894Metal gate transistor, integrated circuits, systems, and fabrication methods thereof
#1895Method for a gate last process
#1896Transistor level routing
#1897Methods for forming a transistor with a strained channel
#1898MOSFET structure with multiple self-aligned silicide contacts
#1899PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
#1900Enhanced etch stop capability during patterning of silicon nitride including layer stacks by providing a chemically formed oxide layer during semiconductor processing
#1901Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
#1902Nested and isolated transistors with reduced impedance difference
#1903Strain transformation in biaxially strained SOI substrates for performance enhancement of P-channel and N-channel transistors
#1904Semiconductor device and fabrication method thereof
#1905Semiconductor device and manufacturing method thereof
#1906Methods of implanting dopant into channel regions
#1907SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1908Gate etch optimization through silicon dopant profile change
#1909Semiconductor device and its manufacturing method
#1910Modifying work function in PMOS devices by counter-doping
#1911Method of making small geometry features
#1912Semiconductor constructions
#1913Semiconductor device
#1914Integrated circuits and methods of design and manufacture thereof
#1915Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow
#1916Method for protecting a gate structure during contact formation
#1917Method of fabricating high-voltage metal oxide semiconductor transistor devices
#1918Fabrication methods for radiation hardened isolation structures
#1919High speed OTP sensing scheme
#1920Dual metal and dual dielectric integration for metal high-k FETs
#1921Integrated circuit system with a floating dielectric region and method of manufacture thereof
#1922METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND A SEMICONDUCTOR DEVICE
#1923Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
#1924Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge
#1925Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
#1926Semiconductor device including a gate insulating film having a metal oxide layer having trap levels
#1927Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material
#1928Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket
#1929Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistors
#1930Germanium field effect transistors and fabrication thereof
#1931SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1932Methods of fabricating a semiconductor device
#1933Semiconductor device and method for fabricating the same
#1934Integrated circuit system employing stress memorization transfer
#1935SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#1936METHOD FOR THE FABRICATION OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
#1937Method of fabricating metal oxide semiconductor transistor
#1938Semiconductor device and method of fabricating the same
#1939CMOS transistors with silicon germanium channel and dual embedded stressors
#1940Enhancing integrity of a high-k gate stack by confining a metal cap layer after deposition
#1941Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process
#1942Semiconductor integrated circuit devices including gates having connection lines thereon
#1943Semiconductor device and manufacturing method of the same
#1944Semiconductor device and a method of manufacturing the same
#1945Methods of fabrication of semiconductor devices with low capacitance
#1946MOS TRANSISTOR WITH A P-FIELD IMPLANT OVERLYING EACH END OF A GATE THEREOF
#1947Method of forming high-mobility devices including epitaxially growing a semiconductor layer on a dislocation-blocking layer in a recess formed in a semiconductor substrate
#1948Manufacturing method of semiconductor device
#1949Junction profile engineering using staged thermal annealing
#1950Body contacts for FET in SOI SRAM array
#1951Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering
#1952Semiconductor device comprising gate electrode having arsenic and phosphorous
#1953Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy
#1954Methods of Forming Semiconductor Devices Using Plasma Dehydrogenation and Devices Formed Thereby
#1955SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1956In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
#1957Isolation Region Implant and Structure
#1958Graded well implantation for asymmetric transistors having reduced gate electrode pitches
#1959METAL GATE TRANSISTOR WITH BARRIER LAYER
#1960Self aligned silicided contacts
#1961Semiconductor device and method for fabricating the same
#1962Manufacturing method of semiconductor device
#1963High performance MOSFET
#1964Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
#1965Tensile strain source using silicon/germanium in globally strained silicon
#1966Semiconductor device including metal insulator semiconductor transistor
#1967Dual high-k oxides with sige channel
#1968Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same
#1969METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
#1970METHOD AND APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE
#1971Structure for facilitating the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device
#1972Semiconductor device and method of manufacturing the same
#1973Method of manufacturing transistor
#1974Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
#1975THIN FILM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE THIN FILM
#1976METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
#1977Method of manufacturing semiconductor device carrying out ion implantation before silicide process
#1978Method for PFET enhancement
#1979Non-volatile memory
#1980Contact barrier structure and manufacturing methods
#1981METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#1982HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR DEVICE
#1983Semiconductor device with carbon-containing region
#1984SEMICONDUCTOR DEVICE FOR IMPROVING CHANNEL MOBILITY
#1985Semiconductor device and method of manufacturing same
#1986Multiple indium implant methods and devices and integrated circuits therefrom
#1987Strained transistor and method for forming the same
#1988Semiconductor device and method for fabricating the same
#1989Semiconductor device and method for fabricating the same
#1990METHOD FOR FORMING SILICIDE IN SEMICONDUCTOR DEVICE
#1991Formation of a super steep retrograde channel
#1992Cascode current mirror and method
#1993Transistor, a transistor arrangement and method thereof
#1994SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#1995N-FET with a highly doped source/drain and strain booster
#1996Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
#1997ETCH METHOD IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE
#1998Forming abrupt source drain metal gate transistors
#1999Strained channel transistor
#2000Anisotropic stress generation by stress-generating liners having a sublithographic width
#2001Tunable spacers for improved gapfill
#2002Methods for producing a semiconductor device having planarization films
#2003MOS-FET having a channel connection, and method for the production of a MOS-FET having a channel connection
#2004Metal oxide semiconductor device
#2005Semiconductor device and method of manufacturing the same
#2006SEMICONDUCTOR DEVICE
#2007METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2008SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2009Tunable gate electrode work function material for transistor applications
#2010High-voltage MOS devices having gates extending into recesses of substrates
#2011Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
#2012Antifuse circuit with well bias transistor
#2013High-K gate electrode structure formed after transistor fabrication by using a spacer
#2014Reduced topography-related irregularities during the patterning of two different stress-inducing layers in the contact level of a semiconductor device
#2015SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#2016Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer
#2017Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget
#2018Integrated circuit transistors with multipart gate conductors
#2019Semiconductor device and method for producing the same
#2020METHODS OF FABRICATING FIELD EFFECT TRANSISTORS INCLUDING TITANIUM NITRIDE GATES OVER PARTIALLY NITRIDED OXIDE AND DEVICES SO FABRICATED
#2021Semiconductor Device and Method for Fabricating the Same
#2022SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2023MICROWAVE ACTIVATION ANNEALING PROCESS
#2024Transistor fabrication method
#2025Nitrogen based implants for defect reduction in strained silicon
#2026Method for preparing a layer comprising nickel monosilicide NiSi on a substrate comprising silicon
#2027Highly N-type and P-type co-doping silicon for strain silicon application
#2028Semiconductor device
#2029Semiconductor device and manufacturing method thereof
#2030MOS device and process having low resistance silicide interface using additional source/drain implant
#2031Method and structure for forming strained SI for CMOS devices
#2032Stress transfer enhancement in transistors by a late gate re-crystallization
#2033Reducing poly-depletion through co-implanting carbon and nitrogen
#2034Method of manufacturing a semiconductor device
#2035Method of fabricating a transistor with semiconductor gate combined locally with a metal
#2036Semiconductor transistor having a stressed channel
#2037Methods of Forming Field Effect Transistors and Devices Formed Thereby
#2038Semiconductor device and method of manufacturing the same
#2039Semiconductor device having a drain-gate isolation portion
#2040Air gap spacer formation
#2041Semiconductor transistor having a stressed channel
#2042Noise reduction in semiconductor device using counter-doping
#2043Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances
#2044Semiconductor device structure having enhanced performance FET device
#2045Semiconductor device
#2046Electronic device with a gate electrode having at least two portions
#2047Method for making split dual gate field effect transistor
#2048Transistor performance with metal gate
#2049Semiconductor device manufacturing method and semiconductor device
#2050Method of manufacturing a semiconductor
#2051Efficient body contact field effect transistor with reduced body resistance
#2052Process/design methodology to enable high performance logic and analog circuits using a single process
#2053Method to maximize nitrogen concentration at the top surface of gate dielectrics
#2054CMOS DEVICE COMPRISING NMOS TRANSISTORS AND PMOS TRANSISTORS HAVING INCREASED STRAIN-INDUCING SOURCES AND CLOSELY SPACED METAL SILICIDE REGIONS
#2055Transistor performance improving method with metal gate
#2056Semiconductor device and method of manufacturing the semiconductor device
#2057Transistor having a high-k metal gate stack and a compressively stressed channel
#2058Method for producing semiconductor device and semiconductor producing apparatus
#2059Nonvolatile memory device and method of manufacturing the same
#2060Semiconductor device
#2061Biasing a transistor out of a supply voltage range
#2062Application of control signal and forward body-bias signal to an active device
#2063Biasing for transistor-based apparatuses and methods
#2064Controlling a Flicker Noise Characteristic Based on a Dielectric Thickness
#2065Semiconductor device and manufacturing method of semiconductor device
#2066Local charge and work function engineering on MOSFET
#2067Ultra-shallow junctions using atomic-layer doping
#2068Semiconductor devices and methods of manufacture thereof
#2069Semiconductor device and method for manufacturing the same
#2070Semiconductor device and manufacturing method for the same
#2071Spacer-less low-K dielectric processes
#2072System and method for I/O ESD protection with polysilicon regions fabricated by processes for making core transistors
#2073Power MOSFET with a gate structure of different material
#2074Semiconductor device and method for fabricating the same
#2075Structured strained substrate for forming strained transistors with reduced thickness of active layer
#2076Semiconductor device and fabrication method of the same
#2077SEMICONDUCTOR DEVICES AND FABRICATION PROCESS THEREOF
#2078Semiconductor integrated circuit device
#2079Static RAM cell design and multi-contact regime for connecting double channel transistors
#2080Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region
#2081Integrated circuit metal gate structure and method of fabrication
#2082NOVEL HIGH-K METAL GATE STRUCTURE AND METHOD OF MAKING
#2083Sealing structure for high-K metal gate
#2084Integrated circuit metal gate structure and method of fabrication
#2085Semiconductor device
#2086Transistor with gain variation compensation
#2087Method to integrate gate etching as all-in-one process for high K metal gate
#2088FUSI integration method using SOG as a sacrificial planarization layer
#2089USJ techniques with helium-treated substrates
#2090USJ techniques with helium-treated substrates
#2091Methods of fabricating MOS transistors having recesses with elevated source/drain regions
#2092Carbon-Doped Epitaxial SiGe
#2093FIELD EFFECT DEVICE WITH GATE ELECTRODE EDGE ENHANCED GATE DIELECTRIC AND METHOD FOR FABRICATION
#2094Selective deposition of amorphous silicon films on metal gates
#2095Structure and method for fabricating self-aligned metal contacts
#2096IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER
#2097Semiconductor device and method of manufacturing the same
#2098Buried floating layer structure for improved breakdown
#2099MOS Transistor Including Extended NLDD Source-Drain Regions For Improved Ruggedness
#2100SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF