208481 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched; Unipolar devices, e.g. field effect transistors; Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2102Ion implanting apparatus and ion implanting method
#2103TECHNIQUE FOR REDUCING SILICIDE NON-UNIFORMITIES IN POLYSILICON GATE ELECTRODES BY AN INTERMEDIATE DIFFUSION BLOCKING LAYER
#2104TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME
#2105Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material
#2106SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#2107TRANSISTOR HAVING A STRAINED CHANNEL REGION CAUSED BY HYDROGEN-INDUCED LATTICE DEFORMATION
#2108METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2109Spacer shape engineering for void-free gap-filling process
#2110Device for ESD protection circuit
#2111Transistor having a metal nitride layer pattern, etchant and methods of forming the same
#2112Semiconductor device and method of manufacturing the same
#2113Method of fabricating strained silicon transistor
#2114Probe apparatus, a process of forming a probe head, and a process of forming an electronic device
#2115METAL OXIDE SEMICONDUCTOR DEVICES HAVING IMPLANTED CARBON DIFFUSION RETARDATION LAYERS AND METHODS FOR FABRICATING THE SAME
#2116Dopant implantation method using multi-step implants
#2117HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH SHORTENED SOURCE AND DRAIN
#2118Field effect transistor and method of fabricating same
#2119SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2120Method for forming P-type lightly doped drain region using germanium pre-amorphous treatment
#2121Semiconductor device and manufacturing method thereof
#2122Method for forming silicide in semiconductor device
#2123Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof
#2124Semiconductor device including a halo layer and method of fabricating the same
#2125Semiconductor device
#2126Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related Device
#2127Short channel LV, MV, and HV CMOS devices
#2128CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOURCE AREAS AND NON-CONFORMAL METAL SILICIDE REGIONS
#2129Contact trenches for enhancing stress transfer in closely spaced transistors
#2130Method for forming double gate and tri-gate transistors on a bulk substrate
#2131METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2132Selective formation of dielectric etch stop layers
#2133Method for forming isolation structures
#2134Method for manufacturing semiconductor device
#2135Diffusion barrier and method of formation thereof
#2136STABLE STRESS DIELECTRIC LAYER
#2137METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2138Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
#2139Semiconductor device and method for manufacturing the same
#2140Semiconductor integrated circuit device
#2141Semiconductor MOS transistor device
#2142In-situ carbon doped e-SiGeCB stack for MOS transistor
#2143Method and system for manufacturing semiconductor device having less variation in electrical characteristics
#2144Metal high dielectric constant transistor with reverse-T gate
#2145PFET ENHANCEMENT DURING SMT
#2146Metal high dielectric constant transistor with reverse-T gate
#2147High-voltage transistor and component containing the latter
#2148Low power circuit structure with metal gate and high-k dielectric
#2149Hafnium lanthanide oxynitride films
#2150SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2151Ge/Xe IMPLANTS TO REDUCE JUNCTION CAPACITANCE AND LEAKAGE
#2152SEMICONDUCTOR DEVICES HAVING RARE EARTH METAL SILICIDE CONTACT LAYERS AND METHODS FOR FABRICATING THE SAME
#2153Transistor fabrication methods and structures thereof
#2154In situ formed drain and source regions in a silicon/germanium containing transistor device
#2155REDUCTION OF METAL SILICIDE DIFFUSION IN A SEMICONDUCTOR DEVICE BY PROTECTING SIDEWALLS OF AN ACTIVE REGION
#2156Manufacturing method of semiconductor device
#2157Method of manufacturing a semiconductor device
#2158Semiconductor device comprising a pixel unit including an auxiliary capacitor
#2159Semiconductor device and method of fabricating the same
#2160Solid state imaging device and method for manufacturing the same
#2161Semiconductor device and method of manufacturing the same
#2162Method for fabricating semiconductor devices with shallow diffusion regions
#2163System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
#2164Formation of standard voltage threshold and low voltage threshold MOSFET devices
#2165Semiconductor device and method of fabricating the same
#2166CMOS STRUCTURE INCLUDING PROTECTIVE SPACERS AND METHOD OF FORMING THEREOF
#2167Integrated circuit system employing grain size enlargement
#2168Method of forming stepped recesses for embedded strain elements in a semiconductor device
#2169Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor
#2170Method of manufacturing semiconductor device
#2171Semiconductor device and method for fabricating the same
#2172Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
#2173SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2174METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2175METHOD FOR FABRICATING A METAL HIGH DIELECTRIC CONSTANT TRANSISTOR WITH REVERSE-T GATE
#2176Metal high dielectric constant transistor with reverse-T gate
#2177Method for producing nMOS and pMOS devices in CMOS processing
#2178Semiconductor device having channel with cooling fluid and manufacturing method thereof
#2179Method of manufacturing semiconductor device and semiconductor device
#2180Method of manufacturing semiconductor device having notched gate MOSFET
#2181Dielectric multilayer structures of microelectronic devices and methods for fabricating the same
#2182Enhanced stress for transistors
#2183Semiconductor device
#2184Method of fabricating semiconductor integrated circuit device
#2185TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF
#2186SILICIDE FORMATION UTILIZING NI-DOPED COBALT DEPOSITION SOURCE
#2187Disconnected DPW structures for improving on-state performance of MOS devices
#2188Method for manufacturing semiconductor device and the semiconductor device
#2189Single gate nonvolatile memory cell with transistor and capacitor
#2190Single gate nonvolatile memory cell with transistor and capacitor
#2191Semiconductor device and method for manufacturing the same
#2192Semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
#2193MOSFET and production method of semiconductor device
#2194Method for encapsulating a high-K gate stack by forming a liner at two different process temperatures
#2195Penetrating implant for forming a semiconductor device
#2196Semiconductor device and method for fabricating the same
#2197Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
#2198Semiconductor device, capacitor, and field effect transistor
#2199Method of forming a semiconductor device using stress memorization
#2200Methods of Forming an Oxide Layer and Methods of Forming a Gate Using the Same
#2201Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance
#2202Transistor array with selected subset having suppressed layout sensitivity of threshold voltage
#2203Metal gate transistor and polysilicon resistor and method for fabricating the same
#2204Semiconductor device comprising isolation trenches inducing different types of strain
#2205Integrated circuitry
#2206INTEGRATION SCHEME FOR CONSTRAINED SEG GROWTH ON POLY DURING RAISED S/D PROCESSING
#2207Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
#2208Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices
#2209Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
#2210Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device
#2211SELECTIVE NITRIDATION OF TRENCH ISOLATION SIDEWALL
#2212Manufacturing method of semiconductor device with amorphous silicon layer formation
#2213Method to enhance channel stress in CMOS processes
#2214CMOS devices having dual high-mobility channels
#2215MOS devices with partial stressor channel
#2216Field effect transistor with reduced shallow trench isolation induced leakage current
#2217Highly Conductive Shallow Junction Formation
#2218Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps
#2219MOS transistor manufacturing
#2220SEMICONDUCTOR DEVICE HAVING A LOCALLY BURIED INSULATION LAYER
#2221Method of implanting ion species into microstructure products by concurrently cleaning the implanter
#2222Method for increasing penetration depth of drain and source implantation species for a given gate height
#2223High voltage semiconductor devices
#2224Self aligned silicided contacts
#2225Integrated circuit system for suppressing short channel effects
#2226SEMICONDUCTOR DEVICE INCLUDING MOS FIELD EFFECT TRANSISTOR HAVING OFFSET SPACERS OR GATE SIDEWALL FILMS ON EITHER SIDE OF GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME
#2227Localized compressive strained semiconductor
#2228Method of forming a nitrogen-enriched region within silicon-oxide-containing masses
#2229Methods of fabricating semiconductor devices with enlarged recessed gate electrodes
#2230FIELD EFFECT TRANSISTOR WITH REDUCED OVERLAP CAPACITANCE
#2231DUAL METAL GATE STRUCTURES AND METHODS
#2232Nested and isolated transistors with reduced impedance difference
#2233METHOD OF TRIMMING A HARD MASK LAYER, METHOD FOR FABRICATING A GATE IN A MOS TRANSISTOR, AND A STACK FOR FABRICATING A GATE IN A MOS TRANSISTOR
#2234Fabrication of semiconductor devices using anti-reflective coatings
#2235Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the same
#2236SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2237Method of making transistor gates with controlled work function
#2238Impurity-activating thermal process method and thermal process apparatus
#2239Impurity-activating thermal process method and thermal process apparatus
#2240Method of fabricating semiconductor device
#2241SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#2242High voltage transistor
#2243Method of manufacturing a semiconductor device
#2244Semiconductor contact barrier
#2245Approach to reduce the contact resistance
#2246Fabrication method of semiconductor device
#2247Method for forming CMOS transistors having FUSI gate electrodes and targeted work functions
#2248Method for manufacturing a CMOS device having dual metal gate
#2249Method and structure for forming trench DRAM with asymmetric strap
#2250Structure and method to fabricate MOSFET with short gate
#2251Anisotropic stress generation by stress-generating liners having a sublithographic width
#2252Metal gate electrodes for replacement gate integration scheme
#2253Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances
#2254High threshold NMOS source-drain formation with As, P and C to reduce damage
#2255Semiconductor device and method for manufacturing the same
#2256Oxide-nitride-oxide stack having multiple oxynitride layers
#2257STRUCTURE AND METHOD TO IMPROVE MOSFET RELIABILITY
#2258INTEGRATION OF ION GETTERING MATERIAL IN DIELECTRIC
#2259MOS devices with corner spacers
#2260P-channel MOS transistor and fabrication process thereof
#2261Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
#2262Structure and method of creating entirely self-aligned metallic contacts
#2263MOSFET HAVING A HIGH STRESS IN THE CHANNEL REGION
#2264Metal insulator semiconductor transistor using a gate insulator including a high dielectric constant film
#2265REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TRANSISTORS BY PERFORMING A HYDROGEN TREATMENT
#2266INTEGRATION SCHEMES TO AVOID FACETED SIGE
#2267HIGH VOLTAGE MOSFET DEVICES CONTAINING TIP COMPENSATION IMPLANT
#2268ANGLED IMPLANTS WITH DIFFERENT CHARACTERISTICS ON DIFFERENT AXES
#2269Methods for full gate silicidation of metal gate structures
#2270Method for increasing the removal rate of photoresist layer
#2271Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials
#2272Semiconductor device and method for manufacturing the same
#2273Metal oxide semiconductor transistor with Y shape metal gate
#2274Field effect transistor structure with an insulating layer at the junction
#2275Semiconductor devices and methods of manufacture thereof
#2276Semiconductor device and manufacturing method thereof
#2277Semiconductor device and method of manufacturing the same
#2278Semiconductor device with deep trench structure
#2279Method for manufacturing a transistor
#2280Semiconductor device and method of fabricating the same
#2281Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
#2282Method of Fabricating Semiconductor Device
#2283METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2284METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#2285SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2286Semiconductor device with MISFET
#2287Semiconductor device and process for manufacturing same
#2288INTEGRATED CIRCUIT AND METHOD FOR MAKING AN INTEGRATED CIRCUIT
#2289BVDII Enhancement with a Cascode DMOS
#2290MOS transistor with varying channel width
#2291Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
#2292Test Pattern of Semiconductor Device and Manufacturing Method Thereof
#2293Method of manufacturing a semiconductor device
#2294High speed OTP sensing scheme
#2295Semiconductor device including a guard ring surrounding an inductor
#2296SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#2297Method of manufacturing MISFET with low contact resistance
#2298Structure and method for manufacturing device with planar halo profile
#2299Semiconductor device and a method of manufacturing the same
#2300Fast axis beam profile shaping for high power laser diode based annealing system
#2301SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2302PROCESS AND METHOD TO LOWER CONTACT RESISTANCE
#2303INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS
#2304Semiconductor device formed in a recrystallized layer
#2305Hybrid semiconductor structure
#2306INTERFACIAL LAYER FOR HAFNIUM-BASED HIGH-K/METAL GATE TRANSISTORS
#2307Semiconductor device and method for manufacturing the same
#2308Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
#2309Transistor, display driver integrated circuit including a transistor, and a method of fabricating a transistor
#2310Semiconductor device and method of fabricating the same
#2311Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
#2312Semiconductor device and method for manufacturing the same
#2313Semiconductor device and method for manufacturing the same
#2314Semiconductor device and method of fabricating the same
#2315SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME
#2316Semiconductor device and fabrication method thereof
#2317Semiconductor device manufactured by removing sidewalls during replacement gate integration scheme
#2318Semiconductor doping with reduced gate edge diode leakage
#2319Method of fabricating semiconductor device
#2320Transistor structure and method for making same
#2321Semiconductor device and a method of manufacturing the same
#2322Field effect transistor
#2323Integrated Circuit Comprising a Field Effect Transistor and Method of Fabricating the Same
#2324Field effect transistor containing a wide band gap semiconductor material in a drain
#2325Selective epitaxial growth method using halogen containing gate sidewall mask
#2326Semiconductor device and method for manufacturing the same
#2327Semiconductor device and method for manufacturing same
#2328SEMICONDUCTOR DEVICES HAVING A CONTACT STRUCTURE AND METHODS OF FABRICATING THE SAME
#2329Method of forming strain-causing layer for MOS transistors and process for fabricating strained MOS transistors
#2330FUSI integration method using SOG as a sacrificial planarization layer
#2331Structure and method for fabricating self-aligned metal contacts
#2332Strained semiconductor, devices and systems and methods of formation
#2333Tensile strain source using silicon/germanium in globally strained silicon
#2334A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR
#2335SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#2336Nitrogen profile in high-K dielectrics using ultrathin disposable capping layers
#2337Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus
#2338Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon
#2339Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
#2340METHOD OF FABRICATING SEMICONDUCTOR DEVICE
#2341METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#2342Metal-oxide-semiconductor transistor and method of forming the same
#2343SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME
#2344Semiconductor device and manufacturing method thereof
#2345Selective formation of silicon carbon epitaxial layer
#2346Ultra-abrupt semiconductor junction profile
#2347High performance MOSFET
#2348Method of forming a resistor and an FET from the metal portion of a MOSFET metal gate stack
#2349Semiconductor device and method of manufacturing the same
#2350Self-assembled sidewall spacer
#2351Channel stress engineering using localized ion implantation induced gate electrode volumetric change
#2352Low temperature conformal oxide formation and applications
#2353SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#2354Defect-free source/drain extensions for MOSFETS having germanium based channel regions
#2355MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistors
#2356Poly profile engineering to modulate spacer induced stress for device enhancement
#2357Method of manufacturing semiconductor device having cell transistor with recess channel structure
#2358Semiconductor device including electrostatic discharge protection circuit
#2359Metallization process
#2360Method of forming field effect transistors using diluted hydrofluoric acid to remove sacrificial nitride spacers
#2361Semiconductor device and method of fabricating the same
#2362Nickel silicide formation for semiconductor components
#2363Integrated circuits and methods of design and manufacture thereof
#2364Method of removing a spacer, method of manufacturing a metal-oxide-semiconductor transistor device, and metal-oxide-semiconductor transistor device
#2365Semiconductor constructions, and electronic systems
#2366SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#2367Semiconductor Device and Method of Fabricating the Same
#2368Semiconductor structure including high voltage device
#2369SEMICONDUCTOR DEVICE HAVING HIGH VOLTAGE MOS TRANSISTOR AND FABRICATION METHOD THEREOF
#2370Semiconductor device and method of making semiconductor device
#2371Transistor and method of fabricating the same
#2372Embedded semiconductor device and method of manufacturing an embedded semiconductor device
#2373Dielectric spacer removal
#2374MODULATING THE STRESS OF POLY-CRYSTALINE SILICON FILMS AND SURROUNDING LAYERS THROUGH THE USE OF DOPANTS AND MULTI-LAYER SILICON FILMS WITH CONTROLLED CRYSTAL STRUCTURE
#2375SEMICONDUCTOR TRANSISTOR HAVING A STRESSED CHANNEL
#2376Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress
#2377Strained channel transistor
#2378SEMICONDUCTOR DEVICE
#2379Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device
#2380Semiconductor device and fabricating method thereof
#2381MOS device and process having low resistance silicide interface using additional source/drain implant
#2382Methods and structure for forming self-aligned borderless contacts for strain engineered logic devices
#2383Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys
#2384Method of Forming an Integrated Circuit and Integrated Circuit
#2385FERROELECTRIC DEVICE AND METHOD FOR FABRICATING THE SAME
#2386Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
#2387Method of forming source and drain regions utilizing dual capping layers and split thermal processes
#2388SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND RESISTOR
#2389METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN NITROGEN IMPLANT, AND RELATED DEVICE
#2390Strained Semiconductor Device and Method of Making Same
#2391Diode-based ESD concept for DEMOS protection
#2392Semiconductor device with high capacitance and low leakage current
#2393Self-aligned super stressed PFET
#2394Formation of shallow junctions by diffusion from a dielectric doped by cluster or molecular ion beams
#2395Methodology for Reducing Post Burn-In Vmin Drift
#2396Semiconductor device fabricated by selective epitaxial growth method
#2397SEMICONDUCTOR DEVICE
#2398Semiconductor device and method of manufacturing semiconductor device
#2399SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
#2400Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regions