Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

Copper compatible chalcogenide phase change memory with adjustable threshold voltage

Phase change memory devices and methods of forming the same

Phase change random access memory and semiconductor device

Method and structure for uniform contact area between heater and phase change material in PCRAM device

Vacuum jacket for phase change memory element

Chemical vapor deposition of chalcogenide materials via alternating layers

Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device

Self-aligned structure and method for confining a melting point in a resistor random access memory

Solid electrolyte switching element, and fabrication method of the solid electrolyte element, and integrated circuit

Phase change memory device with reinforced adhesion force

Resistive memory structure with buffer layer

Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity

Integrated circuit including force-filled resistivity changing material

Four-terminal reconfigurable devices

Memory array with a selector connected to multiple resistive cells

Semiconductor device with ion movement control

4F2 self align fin bottom electrodes FET drive phase change memory

PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Current constricting phase change memory element structure

Phase-change material, sputter target comprising the phase-change material, method of forming phase-change layer using the sputter target, and method of manufacturing phase-change random access memory comprising the phase-change layer

METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION

Semiconductor device and method for fabricating the same

Methods of fabricating nonvolatile memory device and a nonvolatile memory device

Phase change memory devices and methods of fabricating the same

PHASE-CHANGE MEMORY ELEMENT

Methods of fabricating multi-layer phase-changeable memory devices

CMOS-process-compatible programmable via device

Integrated circuit including resistivity changing material having a planarized surface

Phase change memory with tapered heater

Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same

Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same

Phase change memory cell with vertical transistor

Phase change material based temperature sensor

Mushroom phase change memory having a multilayer electrode

INTEGRATED CIRCUIT INCLUDING CONTACT CONTACTING BOTTOM AND SIDEWALL OF ELECTRODE

Variable resistance non-volatile memory cells and methods of fabricating same

Integrated circuit having multilayer electrode

Integrated circuit including vertical diode

Method of fabricating a phase-change memory

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

Method of forming a phase change memory device

Variable resistance non-volatile memory cells and methods of fabricating same

Semiconductor memory structures

Memory having shared storage material

MEMORY HAVING SHARED STORAGE MATERIAL

Vertical phase change memory cell and methods for manufacturing thereof

Integrated circuit including spacer defined electrode

Phase change memory structure with multiple resistance states and methods of programming and sensing same

Resistive memory architectures with multiple memory cells per access device

PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF

Integrated circuit having contact including material between sidewalls

Phase change memory cell structures and methods for manufacturing the same

METHOD OF FORMING A DIODE AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME

Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof

Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same

Semiconductor memory structures

Phase change memory device and method for fabricating the same

Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials

PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL

Phase change memory

Variable resistance memory device having reduced bottom contact area and method of forming the same

Phase-change memory element

PHASE-CHANGE MEMORY ELEMENT

METHOD FOR FORMING A PN DIODE AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE USING THE SAME

Method for manufacturing phase change memory device using a patterning process

Switch array circuit and system using programmable via structures with phase change materials

Fabrication of Phase-Change Resistor Using a Backend Process

Inverted variable resistance memory cell and method of making the same

Spacer electrode small pin phase change RAM and manufacturing method

Programming a normally single phase chalcogenide material for use as a memory of FPLA

Multi-level resistive memory cell using different crystallization speeds

Method of programming multi-layer chalcogenide devices

Phase changeable memory devices

Phase change memory devices and methods for fabricating the same

Phase changeable memory device structures

PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME

PHASE CHANGE DIODE MEMORY

Phase-change memory device and method of manufacturing the same

Material sidewall deposition method

Thermally insulated phase change memory manufacturing method

Air cell thermal isolation for a memory array formed of a programmable resistive material

Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

INTEGRATED CIRCUIT INCLUDING SPACER MATERIAL LAYER

Phase change memory devices and methods for manufacturing the same

Phase-change memory cell having two insulated regions

Variable resistance non-volatile memory cells and methods of fabricating same

Method of Forming Phase Change Memory Cell With Reduced Switchable Volume

4Fself align side wall active phase change memory

Phase-changeable memory devices including phase-changeable materials on silicon nitride layers

Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device

Memory cell sidewall contacting side electrode

Resistive memory cell fabrication methods and devices

Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device

Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System

Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit

Four-terminal programmable via-containing structure and method of fabricating same

PHASE CHANGE MEMORY DEVICE AND FABRICATIONS THEREOF

Methods of fabricating multi-bit phase-change memory devices and devices formed thereby

Method of making integrated circuit (IC) including at least one storage cell

Memory devices having electrodes comprising nanowires, systems including same and methods of forming same

Phase change memory bridge cell with diode isolation device

Damascene conductive line for contacting an underlying memory element

Methods for nanopatterning and production of nanostructures

Device with damaged breakdown layer

Method to form high efficiency GST cell using a double heater cut

Memory structure with reduced-size memory element between memory material portions

Phase change memory devices and methods for manufacturing the same

Optimized solid electrolyte for programmable metallization cell devices and structures

Phase change memory device to prevent thermal cross-talk and method for manufacturing the same

PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF

Phase change memory elements having a confined portion of phase change material on a recessed contact

Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same

Heat-shielded low power PCM-based reprogrammable eFUSE device

Programmable resistance memory element and method for making same

Multi-level data memorisation device with phase change material

Programmable matrix array with phase-change material

Switching element and reconfigurable logic integrated circuit

Three-dimensional phase-change memory array

Three-terminal cascade switch for controlling static power consumption in integrated circuits

Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Storage nodes and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same

Methods of forming phase changeable layers including protruding portions in electrodes thereof

Phase change memory device

Phase change storage cells for memory devices

Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device

Semiconductor memory device and method of manufacturing the same

Memory cell with memory element contacting ring-shaped upper end of bottom electrode

Phase-change memory and fabrication method thereof

Method of forming a vertical diode and method of manufacturing a semiconductor device using the same

Semiconductor device and fabrications thereof

Phase change memory cell with heater and method for fabricating the same

Programmable resistive memory cell with self-forming gap

METHOD OF FORMING A TITANIUM ALUMINUM NITRIDE LAYER AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME

Memory element with reduced-current phase change element

Multi bit phase-change random access memory devices and methods of forming the same

Method for manufacturing a phase change memory device with pillar bottom electrode

Phase change memory cell with filled sidewall memory element and method for fabricating the same

Phase-change memory element

Programmable fuse/non-volatile memory structures using externally heated phase change material

Memory cell device with coplanar electrode surface and method

MANUFACTURE METHOD OF MULTILEVEL PHASE-CHANGE MEMORY AND OPERATING METHOD THEREOF

Resistance variable memory devices with passivating material

Resistive memory including buried word lines

Phase change material (PCM) memory devices with bipolar junction transistors and methods for making thereof

PHASE CHANGE RANDOM ACCESS MEMORIES INCLUDING A WORD LINE FORMED OF A METAL MATERIAL AND METHODS OF FORMING THE SAME

Methods of Forming Carbon Nano-Tube Wires on a Catalyst Metal Layer and Related Methods of Wiring Semiconductor Devices Using Such Carbon Nano-Tube Wires

Method of forming a variable resistance memory device comprising tin selenide

Phase change memory cell design with adjusted seam location

PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Memory cell having a side electrode contact

Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same

Semiconductor memory and method for manufacturing the same

Phase change memory devices

Phase change memory device and method of fabricating the same

Storage node and methods of forming the same, phase change memory device having a storage node and methods of fabricating and operating the same

Phase change memory devices including carbon-containing adhesive pattern

Resistive random access memory device

Phase changeable memory devices including nitrogen and/or silicon

Thermally contained/insulated phase change memory device and method

Memory device including thermal conductor located between programmable volumes

Resistance Limited Phase Change Memory Material

Phase change memory device and method for fabricating the same

Phase change memory device

UNIFORM CRITICAL DIMENSION SIZE PORE FOR PCRAM APPLICATION

Scaled-down phase change memory cell in recessed heater

Method of fabricating an integrated circuit having a memory including a low-k dielectric material

MEMORY HAVING STORAGE LOCATIONS WITHIN A COMMON VOLUME OF PHASE CHANGE MATERIAL

Non-volatile memory device and method of operating the same

Memory device

Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same

Resistor random access memory cell device

Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement

Method of fabrication of phase-change memory

Method of forming phase change layer, method of manufacturing a storage node using the same, and method of manufacturing phase change memory device using the same

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

Pillar phase change memory cell

Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the same

Dielectric antifuse for electro-thermally programmable device

Semiconductor device

Multi-layer electrode structure

Integrated circuit including a memory fabricated using self-aligned processing

Phase change memory device including resistant material

Phase change random access memory device with transistor, and method for fabricating a memory device

Programmable via structure and method of fabricating same

Phase change memory cell and method of formation

Method for making a self-converged void and bottom electrode for memory cell

Method for making a keyhole opening during the manufacture of a memory cell

Method for making a self-converged memory material element for memory cell

Semiconductor memory

Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same

PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer

Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same

Phase-change random access memory device and method of manufacturing the same

Phase change memory cell having a tapered microtrench

TRANSISTOR OF PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR FILLING HOLES WITH METAL CHALCOGENIDE MATERIAL

Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Semiconductor device and driving method of the same

Phase change memory device and method for fabricating the same

Bottom electrode geometry for phase change memory

Self-aligned structure and method for confining a melting point in a resistor random access memory

Semiconductor memory cell and method of forming same

Forced ion migration for chalcogenide phase change memory device

Method of making a nonvolatile phase change memory cell having a reduced contact area

Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same

Phase change memory device having a uniform set and reset current

Resistive memory including bipolar transistor access devices

Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same

Phase change memory system

PHASE CHANGE MEMORY DEVICE WITH HOLE FOR A LOWER ELECTRODE DEFINED IN A STABLE MANNER AND METHOD FOR MANUFACTURING THE SAME

Phase change memory cell having a sidewall contact

Nonvolatile phase change memory cell having a reduced contact area

Resistance random access memory structure for enhanced retention

Phase change memory device and method of forming the same

Methods of fabricating a semiconductor device including a self-aligned cell diode

Asymmetric chalcogenide device

Non-volatile memory devices having cell diodes

Phase change memory and fabricating method thereof

Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Phase change memory cells with dual access devices

Semiconductor storage device and method of manufacturing the same

Thin film fuse phase change RAM and manufacturing method

Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array

Method of forming phase change memory devices in a pulsed DC deposition chamber

Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same

Phase change memory device with ensured sensing margin and method of manufacturing the same

Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component

Elevated bipolar transistor structure

INTEGRATED CIRCUIT AND METHOD FOR PRODUCTION

Memory cell device with circumferentially-extending memory element

Phase change memory devices having dual lower electrodes

METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME

Method for making memory cell device

Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas

Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States

Method and apparatus for non-volatile multi-bit memory

Phase-change memory and method of manufacturing the same

Storage nodes, phase change memory devices, and methods of manufacturing the same

Phase change memory device and method of forming the same

SELF-ALIGNED IN-CONTACT PHASE CHANGE MEMORY DEVICE

Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same

Memory device

Semiconductor memory device and method of controlling the same

Resistive memory devices having a CMOS compatible electrolyte layer and methods of operating the same

Semiconductor memory device and method for fabricating semiconductor memory device

Semiconductor device and method of fabricating the same

Method of forming a chalcogenide compound target

Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same

Programmable resistance memory devices and systems using the same and methods of forming the same

Phase-change material layer and phase-change memory device including the phase-change material layer

Semiconductor memory and method of manufacturing the same

PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same

Phase change memory devices including memory cells having different phase change materials and related methods and systems

Three-dimensional phase-change memory

Phase change material memory device

Phase-change memory device having heater electrode with improved heat generation efficiency

SnSe-based limited reprogrammable cell

Phase change memory device

Ring heater for a phase change memory device

Increasing adherence of dielectrics to phase change materials

Methods of forming semiconductor devices using di-block polymer layers

Method to manufacture a phase change memory

Storage device

Memory device having wide area phase change element and small electrode contact area

Semiconductor device and method of producing the same

Small Electrode for a Chacogenide Switching Device and Method for Fabricating Same

Phase change memory

Thin film phase change memory cell formed on silicon-on-insulator substrate

SEMICONDUCTOR DEVICE

PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME

Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the same

Phase-change memory device, phase-change channel transistor, and memory cell array

Transistor, memory cell array and method for forming and operating a memory device

SEMICONDUCTOR DEVICE HAVING HEATING STRUCTURE AND METHOD OF FORMING THE SAME

Self-aligned, planar phase change memory elements and devices

Small electrode for phase change memories

Semiconductor memory device and fabrication method thereof

Heat-shielded low power PCM-based reprogrammable EFUSE device

Chalcogenide devices exhibiting stable operation from the as-fabricated state

Semiconductor integrated circuit device

Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using

Nonvolatile semiconductor memory device and phase change memory device

I-shaped phase change memory cell with thermal isolation

Phase change memory devices and methods for fabricating the same

Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive

Phase change materials and associated memory devices

Multi-layered chalcogenide and related devices having enhanced operational characteristics

Phase-change memory device with minimized reduction in thermal efficiency and method of manufacturing the same

PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF

Phase-change memory and fabrication method thereof

Composite chalcogenide materials and devices

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same

Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays

Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layer

Configurable circuits using phase change switches