209066 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Selection of switching materials; Compounds of sulfur, selenium or tellurium, e.g. chalcogenides Tellurides, e.g. GeSbTe
Memory cells, memory cell arrays, methods of using and methods of making
#602Variable resistance memory devices and methods of forming the same
#603Memory cells, memory arrays, and methods of forming memory cells and arrays
#604Structures incorporating and methods of forming metal lines including carbon
#605Three dimensional memory array with select device
#606Semiconductor devices
#607Nonvolatile memory device including ferroelectric memory element and resistive memory element, and method of operating nonvolatile memory device
#608Memory device and method of manufacturing the same
#609Cross-point memory and methods for fabrication of same
#610Replacement materials processes for forming cross point memory
#611SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
#612Interconnection for memory electrodes
#613Apparatus and techniques for anisotropic substrate etching
#614Constructions comprising stacked memory arrays
#615Variable resistance memory device and method of manufacturing the same
#616METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL
#617Semiconductor memory and method of manufacturing the same
#618Phase change memory element
#619Connections for memory electrode lines
#620Memory cells having resistors and formation of the same
#621Phase-change memory cell
#622Apparatuses and methods including memory access in cross point memory
#623Variable resistive memory device
#624Semiconductor device having magnetic tunnel junction pattern
#625Conductive hard mask for memory device formation
#626Ferroelectric memory devices
#627Cross-point memory and methods for fabrication of same
#628Resistance change memory devices
#629Apparatuses including electrodes having a conductive barrier material and methods of forming same
#630Apparatuses including electrodes having a conductive barrier material and methods of forming same
#631Thermally optimized phase change memory cells and methods of fabricating the same
#632Variable resistance memory devices and methods of manufacturing the same
#633Resistive memory architectures with multiple memory cells per access device
#634Apparatuses including electrodes having a conductive barrier material and methods of forming same
#635Apparatuses including electrodes having a conductive barrier material and methods of forming same
#636Apparatuses including electrodes having a conductive barrier material and methods of forming same
#637Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#638Resistive memory cell structures and methods
#639Phase-change memory
#640Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device
#641Storage array, and storage chip and method for storing logical relationship of objects
#642Phase change material for phase change memory and preparation method therefor
#643Cross-point memory array device and method of manufacturing the same
#644Programming enhancement in self-selecting memory
#645Multi-level phase change device
#646MATERIALS AND COMPONENTS IN PHASE CHANGE MEMORY DEVICES
#647Phase change memory
#648Semiconductor device and method for fabricating the same
#649Multi-deck memory device with inverted deck
#650Method of forming a layer and a method of fabricating a variable resistance memory device using the same
#651Memory device including a variable resistance material layer
#652Memory including a selector switch on a variable resistance memory cell
#653Storage device having variable resistance layer
#654Storage device and control method thereof
#655Multi-layer resistive memory device with variable resistance elements
#656Memory arrays
#657Phase change memory and fabrication method thereof
#658PHASE CHANGE MEMORY UNIT AND PREPARATION METHOD THEREFOR
#659Storage device and production method thereof
#660Three-dimensional semiconductor memory device and method of fabricating the same
#661Methods of forming and using materials containing silicon and nitrogen
#662Semiconductor storage device
#663Memory device and electronic apparatus including the same
#664Semiconductor constructions
#665Nanoparticle-based resistive memory device and methods for manufacturing the same
#666STRUCTURE OF RANDOM ACCESS MEMORY
#667Etching solution for tungsten and GST films
#668Integration of confined phase change memory with threshold switching material
#669Preparation method of Cu-based resistive random access memory, and memory
#670Switch device and storage unit
#671Thermal insulation for three-dimensional memory arrays
#672Thermal insulation for three-dimensional memory arrays
#673Current compliance layers and memory arrays comprising thereof
#674Memory device and method of manufacturing the same
#675Method for fabricating a semiconductor device
#676Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
#677Resistance change memory device and fabrication method thereof
#678VARIABLE RESISTANCE MEMORY DEVICE
#679Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#680Semiconductor device having buried gate structure and method for fabricating the same
#681One-time programmable devices having a semiconductor fin structure with a divided active region
#682Semiconductor devices including a plurality of stacked cell structures
#683Memory device and method of fabricating the same
#684Methods of forming resistive memory elements
#685Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer
#686Memory and electronic devices with reduced operational energy in chalcogenide material
#687Variable resistance memory stack with treated sidewalls
#688Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
#689Methods of operating memory devices and electronic systems
#690Conductive hard mask for memory device formation
#691Phase change memory cell with constriction structure
#692Phase change memory cell with constriction structure
#693Cross-point memory and methods for fabrication of same
#694Three-dimensional memory apparatus and method of manufacturing the same
#695Three-dimensional memory apparatuses and methods of use
#696Array of cross point memory cells and methods of forming an array of cross point memory cells
#697Memory arrays and methods of forming memory arrays
#698Dynamic random access memory and fabrication method thereof
#699Apparatuses including electrodes having a conductive barrier material and methods of forming same
#700Phase changeable memory device having a cross point array structure
#701Clamp elements for phase change memory arrays
#702Methods, apparatuses, and circuits for programming a memory device
#703Constructions comprising stacked memory arrays
#704Arrays of memory cells and methods of forming an array of memory cells
#705Bromine containing silicon precursors for encapsulation layers
#706Textured memory cell structures
#707Superlattice memory having GeTe layer and nitrogen-doped SbTelayer and memory device having the same
#708DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS
#709Resistive memory cell structures and methods
#710Method and system for providing a magnetic cell usable in spin transfer torque applications and including a switchable shunting layer
#711PHASE-CHANGE MEMORY CELL
#712Synthesis and use of precursors for ALD of group VA element containing thin films
#713Synthesis and use of precursors for ALD of tellurium and selenium thin films
#714Phase change memory devices including two-dimensional material and methods of operating the same
#715Variable resistance memory device and method of manufacturing the same
#716Memory cell with independently-sized electrode
#717Switch device and storage unit
#718Method of forming semiconductor devices having threshold switching devices
#719Non-volatile memory device
#720Fin selector with gated RRAM
#721Textured memory cell structures
#722Variable resistance memory device and method of manufacturing the same
#723Memory device
#724Manufacturing method for a nonvolatile resistive switching memory device
#725Method of forming semiconductor device including P-N diode
#726VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
#7273D phase change memory with high endurance
#728Three-dimensional semiconductor memory devices
#729Memory cell selector and method of operating memory cell
#730METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
#731Cross-point memory and methods for forming of the same
#732Memory device
#733OTP memory with high data security
#734Materials and components in phase change memory devices
#735Phase-change memory cell, and method for manufacturing the phase-change memory cell
#736Cross-point memory and methods for fabrication of same
#737PCM switch and method of making the same
#738ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
#739Resistive memory device
#740Resistive random access memory device
#741Cross-point memory and methods for fabrication of same
#742Phase change memory device
#743Interconnection for memory electrodes
#744Memory devices including phase change material elements
#745Methods of forming memory cells
#746Semiconductor structures including liners and related methods
#747Self-gated RRAM cell and method for manufacturing the same
#748Phase change memory element
#749PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE
#750Method for producing a memory device having a phase change film and reset gate
#751MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
#752Memory cells having a number of conductive diffusion barrier materials and manufacturing methods
#753Memory arrays
#754Method for producing a pillar-shaped phase change memory device
#755Semiconductor device including an etching stop layer and method of manufacturing the same
#756Phase change storage device with multiple serially connected storage regions
#757Memory device including ovonic threshold switch adjusting threshold voltage thereof
#758Variable resistance memory devices
#759Thermal insulation for three-dimensional memory arrays
#760Memory device and method of manufacturing the same
#761Semiconductor devices and methods of manufacturing the same
#762Structures incorporating and methods of forming metal lines including carbon
#763Semiconductor memory devices
#764Semiconductor memory device
#765Buried low-resistance metal word lines for cross-point variable-resistance material memories
#766PHASE CHANGE MEMORY HAVING A COMPOSITE MEMORY ELEMENT
#767Conductive hard mask for memory device formation
#768Replacement materials processes for forming cross point memory
#769Three dimensional memory array with select device
#770Semiconductor devices and methods of fabricating the same
#771Methods for forming narrow vertical pillars and integrated circuit devices having the same
#772Commutator structure comprising several channels of phase change material and interdigitated control electrodes
#773Methods of forming memory arrays
#774Variable resistance memory devices
#775Tube-shaped reconfigurable phase change device having multiple sets of contacts
#776Memory device and method of manufacturing the same
#777Memory device and method of manufacturing the same
#778Memory device and method of manufacturing the same
#779Variable resistance memory device and a method of manufacturing the same
#780Methods of forming vertical field-effect transistor with selfaligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby
#781Variable resistance memory devices and methods of manufacturing the same
#782Superlattice memory and crosspoint memory device
#783Methods, apparatuses, and circuits for programming a memory device
#784Methods of forming metal on inhomogeneous surfaces and structures incorporating metal on inhomogeneous surfaces
#785Superlattice memory and crosspoint memory device
#786Integrated arming switch and arming switch activation layer for secure memory
#787Metal nitride keyhole or spacer phase change memory cell structures
#788Methods of forming phase change memory apparatuses
#789Memory device and electronic apparatus including the same
#790Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
#791Memory cell with independently-sized elements
#792Semiconductor memory device
#793Variable resistance memory devices and methods of manufacturing the same
#794Piezoelectric MEMS resonator with integrated phase change material switches
#795Cross-point memory and methods for fabrication of same
#796Variable resistive memory device and method of manufacturing the same
#797Method for reading out a resistive memory cell and a memory cell for carrying out the method
#798Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switches
#799SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING THE SAME
#800Multi-level phase change device
#801Switched memristor analog tuning
#802Slurry for polishing phase-change materials and method for producing a phase-change device using same
#803Method of manufacturing a PCRAM memory
#804RRAM cell structure with laterally offset BEVA/TEVA
#805System on chip (SoC) based on neural processor or microprocessor
#806Self-aligned cross-point phase change memory-switch array
#807Method for vapor-phase growth of phase-change thin film, and device for vapor-phase growth of phase-change thin film
#808STORAGE DEVICE AND STORAGE UNIT
#809Three-dimensional memory apparatuses and methods of use
#810Memory devices and methods of manufacturing the same
#811Programmable resistive devices using Finfet structures for selectors
#812Methods of forming memory devices having electrodes comprising nanowires
#813VARIABLE RESISTIVE MEMORY DEVICE HAVING A PHASE CHANGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#814Selector Elements
#815Memory including a selector switch on a variable resistance memory cell
#816Bromine containing silicon precursors for encapsulation layers
#817Method for encapsulating a chalcogenide material
#818Arrays of memory cells and methods of forming an array of memory cells
#819Integrated reactive material erasure element with phase change memory
#820Electrode materials and interface layers to minimize chalcogenide interface resistance
#821VARIABLE RESISTANCE MATERIAL LAYERS AND VARIABLE RESISTANCE MEMORY DEVICES INCLUDING THE SAME
#822EMBEDDED PHASE CHANGE MEMORY DEVICES AND RELATED METHODS
#823Semiconductor device, related manufacturing method, and related electronic device
#824Semiconductor devices having an air gap
#825Semiconductor memory devices for use in electrically alterable read only memory (ROM) and semiconductor thin film devices (spintrons and spin-orbitrons)
#826Resistive memory architectures with multiple memory cells per access device
#827Clamp elements for phase change memory arrays
#828Crystal orientation layer laminated structure, electronic memory and method for manufacturing crystal orientation layer laminated structure
#829Memory cells including a metal chalcogenide material and related methods
#830Semiconductor constructions and memory arrays
#831Electroplated phase change switch
#832Memory arrays having confined phase change material structures laterally surrounded with silicon nitride
#833Semiconductor memory device
#834Reduced current memory device
#835Method for making phase change memory cell
#836SELF-ALIGNED MEMORY CELL CONTACT
#837Phase change memory with inter-granular switching
#838Method for producing a device
#839Semiconductor device including a resistive memory layer and method of manufacturing the same including the cleaning of byproducts
#840Semiconductor device
#841Semiconductor devices and methods of manufacturing the same
#842Tunable variable resistance memory device
#843Embedded non-volatile memory
#844Interconnection for memory electrodes
#845Interposers for integrated circuits with multiple-time programming and methods for manufacturing the same
#846Non-volatile memory with multiple latency tiers
#847Switch device and storage unit having a switch layer between first and second electrodes
#848Method for producing semiconductor device
#849Memory arrays
#850Semiconductor device and method for producing semiconductor device
#851Resistive memory cell having a single bottom electrode and two top electrodes
#852Methods of forming structures
#853Phase-change device, related manufacturing method, and related electronic device
#854Resistive memory cell structures and methods
#855Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
#856Forming self-aligned conductive lines for resistive random access memories
#857Memory device and manufacturing method of memory device
#858Solid state devices having fine pitch structures
#859Apparatuses and methods including memory access in cross point memory
#860Materials and components in phase change memory devices
#861Integrated circuits with memory cells and methods of manufacturing the same
#862Vertical thin film transistors in non-volatile storage systems
#863Spin electronic memory, information recording method and information reproducing method
#864Graphene-inserted phase change memory device and method of fabricating the same
#865Memory device
#866Semiconductor memory device
#867Method of operating memory array having divided apart bit lines and partially divided bit line selector switches
#868Forming resistive random access memories together with fuse arrays
#869Connections for memory electrode lines
#870Array of cross point memory cells and methods of forming an array of cross point memory cells
#871Replacement materials processes for forming cross point memory
#872Methods of forming and using materials containing silicon and nitrogen
#873Methods of forming memory arrays
#874Phase change memory
#875Semiconductor device having reset gate and phase change layer
#876Horizontally oriented and vertically stacked memory cells
#877Memory device having electrically insulated reset gate
#878Memory device
#879SEMICONDUCTOR MEMORY DEVICES FOR USE IN ELECTRICALLY ALTERABLE READ ONLY MEMORY (ROM) AND SEMICONDUCTOR THIN FILM DEVICES (SPINTRONS and SPIN-ORBITRONS)
#880Variable resistance memory device and method of manufacturing the same
#881Variable resistance memory device with variable resistance material layer
#8823-dimensional (3D) non-volatile memory device and method of fabricating the same
#883Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#884Synthesis and use of precursors for ALD of group VA element containing thin films
#885Memory cells and methods of making memory cells
#886CONDUCTIVE BRIDGING MEMORY DEVICE HAVING A CU-TE-(GE/SI) COMPRISING TOP ELECTRODE
#887Structures incorporating and methods of forming metal lines including carbon
#888Semiconductor device structures with improved planarization uniformity, and related methods
#889Memory arrays and methods of forming memory arrays
#890Resistive memory cell having a reduced conductive path area
#891Semiconductor integrated circuit device having encapsulation film and method of fabricating the same
#892Phase change memory cell with constriction structure
#893Variable resistance material layers and variable resistance memory devices including the same
#894Phase transformation in transition metal dichalcogenides
#895EMBEDDED PHASE CHANGE MEMORY DEVICES AND RELATED METHODS
#896Semiconductor devices and methods of fabricating the same
#897Semiconductor devices having buried contact structures
#898Phase-change memory cell implant for dummy array leakage reduction
#899System on chip (SoC) based on phase transition and/or phase change material
#900ELECTRONIC DEVICE