Phase change memory with diodes embedded in substrate

Memory cells, integrated devices, and methods of forming memory cells

Semiconductor device with a stoichiometric gradient

Capacitor of variable capacity, comprising a layer of a phase change material, and method for varying the capacity of a capacitor

Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device

Method for forming a self-aligned contact in a damascene structure used to form a memory device

Active structures of a semiconductor device and methods of manufacturing the same

Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device

Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device

Three dimensional memory array architecture

Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell

Cross-point memory and methods for fabrication of same

FLASH CELL AND FLASH CELL SET

PHASE CHANGE MEMORY WITH METASTABLE SET AND RESET STATES

Phase change memory cell with improved phase change material

Method for forming RRAM cell including V-shaped structure

Phase change memory element

Memory cell with independently-sized electrode

MEMORY DEVICE

Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory material

Memory cells and methods of forming memory cells

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

MEMORY DEVICE

Semiconductor device and method for producing semiconductor device

Methods of forming and using materials containing silicon and nitrogen

Method of making a multicomponent film

Memory including a selector switch on a variable resistance memory cell

Semiconductor memory device

Nonvolatile memory device and method for manufacturing same

Memory device

Phase-change material distributed switch systems

Non-volatile memory device

Method and system of programmable resistive devices with read capability using a low supply voltage

Materials and components in phase change memory devices

Integrated memory and methods of forming repeating structures

Phase change random access memory and fabrication method thereof

Vertical bit line non-volatile memory systems and methods of fabrication

Nanochannel array of nanowires for resistive memory devices

Semiconductor constructions and methods of forming memory cells

Cross-point memory and methods for fabrication of same

Resistive memory device and method of operating resistive memory device

Memory elements using self-aligned phase change material layers and methods of manufacturing same

Directly heated RF phase change switch

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Resistive memory device

Phase change material switch and method of making the same

FORMING SELF-ALIGNED CONDUCTIVE LINES FOR RESISTIVE RANDOM ACCESS MEMORIES

Methods of manufacturing a phase change memory device including a heat sink

Self-aligned memory cell contact

Memory cell with independently-sized elements

Embedded non-volatile memory

Variable resistance memory device

Thermally optimized phase change memory cells and methods of fabricating the same

Multiple bit per cell dual-alloy GST memory elements

Semiconductor storage device and method for manufacturing same

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Methods of forming structures

Memory cells, methods of forming memory cells and methods of forming memory arrays

Buried low-resistance metal word lines for cross-point variable-resistance material memories

Memory devices with reduced operational energy in phase change material and methods of operation

METHODS TO FABRICATE NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING PHYSICAL VAPOR DEPOSITION

Memory cells

Semiconductor apparatus and method for fabricating the same

Semiconductor diodes, and variable resistance memory devices

Three-dimensional semiconductor memory device and method of fabricating the same

Resistive random-access memory with implanted and radiated channels

Memory cells formed with sealing material

Phase change memory cells

METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL

Memory arrays with polygonal memory cells having specific sidewall orientations

Array of cross point memory cells and methods of forming an array of cross point memory cells

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Phase change memory structures and methods

Semiconductor device and manufacturing method thereof

Memory device and memory unit

Resistor memory bit-cell and circuitry and method of making the same

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Semiconductor device and electronic device including the same

Semiconductor device, related manufacturing method, and related electronic device

Phase change memory apparatuses

Phase-change device, related manufacturing method, and related electronic device

Resistance-switching memory cell with multiple raised structures in a bottom electrode

Resistive memory cell structures and methods

Process for the electrochemical deposition of a semiconductor material

Methods for forming arrays of small, closely spaced features

RRAM cell structure with laterally offset BEVA/TEVA

Memory cells, memory arrays, and methods of forming memory cells and arrays

Memory cells and methods of forming memory cells

Phase change memory cell and phase change memory

Joint short-time and long-time storage device and storage method thereof

Phase change memory stack with treated sidewalls

Method of fabricating semiconductor device

Vertical bit line wide band gap TFT decoder

Physical vapor deposition methods and systems to form semiconductor films using counterbalance magnetic field generators

Memory device having self-aligned cell structure

Methods of forming repeating structures

Phase change memory device

Forming resistive random access memories together with fuse arrays

Semiconductor structures and devices including conductive lines and peripheral conductive pads

Double self-aligned phase change memory device structure

Memory arrays

Phase change memory cells including nitrogenated carbon materials, and related methods

RRAM array having lateral RRAM cells and vertical conducting structures

Variable resistive memory device and method of fabricating the same and method of driving the same

Cross-point memory and methods for fabrication of same

Metal nitride keyhole or spacer phase change memory cell structures

Cross-point memory and methods for fabrication of same

Fin selector with gated RRAM

Horizontally oriented and vertically stacked memory cells

Memory cell arrays

Phase-change storage unit containing TiSiN material layer and method for preparing the same

Series connected resistance change memory device

Multiple phase change materials in an integrated circuit for system on a chip application

Memory device having stitched arrays of 4 Fmemory cells

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof

Switch device and storage unit

RRAM cell including V-shaped structure

Method for making phase change memory cell

Memory cells having heaters with angled sidewalls

Semiconductor memory device and manufacturing method thereof

Feedback of layer thickness timing and clearance timing for polishing control

Phase change memory cell with self-aligned vertical heater and low resistivity interface

Phase change memories

Phase change memory cell with heat shield

Resistive memory architectures with multiple memory cells per access device

High precision resistor and trimming method thereof

Wrap around phase change memory

Method, system and device for phase change memory with shunt

Material test structure

Memory devices including phase change material elements

Semiconductor storage device

Solid state devices having fine pitch structures

Polishing composition

Method for fabricating semiconductor device

Phase-change memory and semiconductor recording/reproducing device

Variable resistance memory device and a method of fabricating the same

Semiconductor elements stacked and bonded with an anisotropic conductive adhesive

Precursors For GST Films In ALD/CVD Processes

Methods of selectively doping chalcogenide materials and methods of forming semiconductor devices

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Cross-point memory and methods for fabrication of same

Semiconductor device and method for producing semiconductor device

Data storage device and methods of manufacturing the same

Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells

Electrode materials and interface layers to minimize chalcogenide interface resistance

Memory cells and methods of forming memory cells

Memory device, semiconductor device, method for producing memory device, and method for producing semiconductor device

Non-volatile memory device and production method thereof

Phase change memory and method of fabricating same

Memories and methods of operating memories having memory cells sharing a resistance variable material

Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element

Variable resistive memory device and method of fabricating the same

E-fuses containing at least one underlying tungsten contact for programming

Semiconductor devices and methods of fabricating the same

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Phase change memory and fabrication method

Resistor memory bit-cell and circuitry and method of making the same

RRAM cell structure with laterally offset BEVA/TEVA

RESISTIVE MEMORY APPARATUS AND MANUFACTURING METHOD THEREOF

Memory cell with independently-sized electrode

Arrays of nonvolatile memory cells comprising a repetition of a unit cell, arrays of nonvolatile memory cells comprising a combination of vertically oriented and horizontally oriented memory cells, and arrays of vertically stacked tiers of nonvolatile memory cells

Variable resistance memory device including phase change area defined by spacers

Interconnection for memory electrodes

Methods for forming interconnections between top electrodes in memory cells by a two-step chemical-mechanical polishing (CMP) process

Memory devices having electrodes comprising nanowires

Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell

Methods, apparatuses, and circuits for programming a memory device

Diode for variable-resistance material memories, processes of forming same, and methods of using same

Method for making three dimensional memory array architecture using phase change and ovonic switching materials

Resistive random access memory

Variable resistance memory device and a variable resistance memory system including the same

Phase change memory element

Memory cells and methods of forming memory cells

Phase change material layers

Method of manufacturing semiconductor device

Apparatus and method for treating a substrate

Shared-gate vertical-TFT for vertical bit line array

Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors

Circuit and system of using junction diode of MOS as program selector for programmable resistive devices

Programmably reversible resistive device cells using CMOS logic processes

Circuit and system of using FinFET for building programmable resistive devices

Memory constructions

Self-selecting PCM device not requiring a dedicated selector transistor

Superlattice phase change memory device

One-time programmable devices having program selector for electrical fuses with extended area

Semiconductor constructions, memory cells and memory arrays

Semiconductor device

Phase change memory cell with large electrode contact area

Self-aligned cross-point phase change memory-switch array

Resistive memory with a stabilizer

Phase change memory material and system for embedded memory applications

Multi-level recording in a superlattice phase change memory cell

Memory element and memory device

Thermal-disturb mitigation in dual-deck cross-point memories

Phase change current density control structure

Variable resistance memory device and method of manufacturing the same

Phase-change memory cells

Phase-change memory cells

Structures for resistance random access memory and methods of forming the same

Resistive memory cell fabrication methods and devices

Semiconductor storage device and method for manufacturing same

Three dimensional memory array with select device

Non-volatile phase-change resistive memory

High density nonvolatile memory

Vertical transistor phase change memory

Variable resistance memory device and method of manufacturing the same

Thermally optimized phase change memory cells and methods of fabricating the same

Memory structures, memory arrays, methods of forming memory structures and methods of forming memory arrays

Semiconductor constructions and methods of forming memory cells

Phase change memory cell with constriction structure

Memory device having stitched arrays of 4 Fmemory cells

Memory cells and memory cell arrays

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Embedded non-volatile memory

Resistive memory cells with two discrete layers of programmable material, methods of programming memory cells, and methods of forming memory cells

Three dimensional resistive memory

Pinched center resistive change memory cell

Non-volatile memory device having multi-level cells and method of forming the same

Resistive memory and methods of processing resistive memory

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Resistive memory device and fabrication method thereof

Vertical switch three-dimensional memory array

Method for forming a PCRAM with low reset current

Semiconductor constructions and memory arrays

Resistive memory device and fabrication method thereof

Memory cells

Nonvolatile memory cells and methods of forming nonvolatile memory cells

Method of making a multicomponent film

Methods of forming variable resistive memory devices

Method for fabricating a semiconductor device

Methods of depositing phase change materials and methods of forming memory

Semiconductor device and electronic device including the same

Three dimensional memory array architecture

Semiconductor device with PCM memory cells and nanotubes and related methods

Memory arrays and methods of forming same

Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same

Method for forming ReRAM chips operating at low operating temperatures

Method for improving data retention of ReRAM chips operating at low operating temperatures

Semiconductor device and electronic device including the same

Stackable non-volatile memory

Resistive non-volatile memory

ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications

Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array

Phase change material switch and method of making the same

Fin selector with gated RRAM

Non-volatile storage system biasing conditions for standby and first read

3D non-volatile memory having low-current cells and methods

Vertical bit line TFT decoder for high voltage operation

Phase-change memory and semiconductor recording/reproducing device

Memory cells and methods of forming memory cells

Phase change memory cells and methods of forming phase change memory cells

Combined conductive plug/conductive line memory arrays and methods of forming the same

Vertical bit line non-volatile memory systems and methods of fabrication

Clamp elements for phase change memory arrays

Memory architecture and cell design employing two access transistors

Semiconductor storage device and method of fabricating same

Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells

Encapsulated phase change cell structures and methods

Methods of forming germanium-antimony-tellurium materials and chalcogenide materials

Semiconductor device and its manufacturing method

Nonvolatile semiconductor memory device

Apparatuses including electrodes having a conductive barrier material and methods of forming same

Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices

Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask

Resistance-switching memory cell with multiple raised structures in a bottom electrode

Memory devices and formation methods

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Semiconductor storage device

Memory cells, methods of forming memory cells and methods of forming memory arrays

Memory cells and methods of forming memory cells

Arrays of memory cells and methods of forming an array of memory cells

Methods of forming memory and methods of forming vertically-stacked structures

Memory cell constructions, and methods for fabricating memory cell constructions

Memory cells, integrated devices, and methods of forming memory cells

Antimony compounds useful for deposition of antimony-containing materials

High current capable access device for three-dimensional solid-state memory

Interactive greeting card

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

Method, system and device for phase change memory with shunt

Memory device

Variable resistance memory device

Memory element and memory device

Semiconductor device having diode and method of forming the same

Methods of operating a phase change memory cell

Phase-change memory

Methods of self-aligned growth of chalcogenide memory access device

Phase change memory cell

Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same

Ge—Sb—Te film forming method, Ge—Te film forming method, and Sb—Te film forming method

Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

Resistive memory device and method of manufacturing the same

Memory cells and methods of forming memory cells

Semiconductor devices having blocking layers and methods of forming the same

Uniform critical dimension size pore for PCRAM application

Memory device and method for making same

Method for fabricating phase change memory

Resistive random access memory devices formed on fiber and methods of manufacturing the same

Superlattice phase change memory including Sb2Te3 layers containing Zr

Heating phase change material