Electrode manufacturing method, fuse device and manufacturing method therefor

Variable resistance memory device

Methods for forming narrow vertical pillars and integrated circuit devices having the same

Phase change memory devices and methods comprising gallium, lanthanide and chalcogenide compounds

Solid state devices having fine pitch structures

One-time programmable memories using polysilicon diodes as program selectors

Semiconductor memory devices

Semiconductor devices and methods of fabricating the same

Semiconductor devices and methods of forming the same

3-dimensional (3D) non-volatile memory device and method of fabricating the same

Phase-change memory devices including thermally-isolated phase-change layers and methods of fabricating the same

Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells

Phase Change Memory Cells, Methods Of Forming Phase Change Memory Cells, And Methods Of Forming Heater Material For Phase Change Memory Cells

Wrap around phase change memory

Memory elements using self-aligned phase change material layers and methods of manufacturing same

Memory constructions comprising thin films of phase change material

Memory constructions

Methods of forming phase change memory with various grain sizes

Low temperature GST process

Methods of manufacturing semiconductor devices

Metallization scheme for integrated circuit

Memory device architecture

Interconnection for memory electrodes

Reactive material for integrated circuit tamper detection and response

Phase change memory structures and methods

Methods for forming arrays of small, closely spaced features

Semiconductor memory device

Memory component including an ion source layer and a resistance change layer, and a memory device using the same

Methods for forming resistance random access memory structure

Semiconductor device having a non-volatile memory built-in

Phase-change memory cell

Single-Crystal Phase Change Material on Insulator for Reduced Cell Variability

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Fin-type memory

Three dimensional memory array architecture

Three dimensional memory array architecture

Nonvolatile memory device

Nonvolatile memory

Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell

Semiconductor devices and methods of fabricating the same

Resistive memory device, method of fabricating the same, and memory apparatus and data processing system having the same

Phase-change random access memory and method of manufacturing the same

Forming resistive random access memories together with fuse arrays

Phase change memory element

Method for non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines

Methods, devices and processes for multi-state phase change devices

State changing device

Phase change memory device

Method for forming a PCRAM with low reset current

SWITCH DEVICE AND CROSSBAR MEMORY ARRAY USING SAME

Phase change material gradient structures and methods

Methods of forming phase-change memory devices and devices so formed

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Semiconductor constructions and memory arrays

Resistance variable memory cell structures and methods

Phase change current density control structure

Memory element and memory device

Semiconductor constructions, memory cells, memory arrays and methods of forming memory cells

Semiconductor devices and methods of fabricating the same

Thermal isolation in memory cells

Methods of manufacturing a phase change memory device

Low power phase change memory cell

Memory programming to reduce thermal disturb

Memory arrays and methods of forming memory cells

Memory arrays

Resistive memory and fabricating method thereof

Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof

Non-volatile memory device having multi-level cells and method of forming the same

Resistive memory device and memory apparatus and data processing system having the same

Al-Sb-Te phase change material used for phase change memory and fabrication method thereof

Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells

Semiconductor constructions and memory arrays

Drift-insensitive or invariant material for phase change memory

RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF

Memory device having self-aligned cell structure

Resistive memory device and fabrication method thereof

Drift-insensitive or invariant material for phase change memory

Phase change material cell with piezoelectric or ferroelectric stress inducer liner

Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory

Multilayer-Stacked Phase Change Memory Cell

Methods of forming a metal chalcogenide material and related methods of forming a memory cell

Apparatuses and methods including memory access in cross point memory

Semiconductor devices and methods of manufacturing the same

Semiconductor memory device

Memory cells having-multi-portion data storage region

Variable resistance memory device and method for fabricating the same

Keyhole-free sloped heater for phase change memory

Solid memory

Bipolar switching memory cell with built-in “on” state rectifying current-voltage characteristics

Phase change memory cells and methods of forming phase change memory cells

Phase change memory cells and methods of forming phase change memory cells

Methods for forming a nanowire and apparatus thereof

Phase change memory structure comprising phase change alloy center-filled with dielectric material

Material test structure

Method of fabricating phase-change random access memory device

Phase-change memory device and method of fabricating the same

Solid memory

Adaptive resistive device and methods thereof

Hetero-switching layer in a RRAM device and method

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Variable resistance memory devices and method of forming the same

Multi-layer phase change material

Method of forming a metal chalcogenide material and methods of forming memory cells including same

Phase-change memory cell

Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device

Phase-change memory devices

Semiconductor device and manufacturing method thereof

Methods, structures and devices for increasing memory density

Variable resistance memory device and method for fabricating the same

Memory cells

Approach for phase change memory cells targeting different device specifications

Semiconductor devices having metal oxide patterns

High-integration semiconductor memory device and method of manufacturing the same

Non-volatile memory device and production method thereof

Semiconductor device including a diode and method of manufacturing the same

Memories with cylindrical read/write stacks

Nonvolatile memory device and method for manufacturing same

Resistive memory device and fabrication method thereof

Method of forming a contact and method of manufacturing a phase change memory device using the same

Variable resistive memory device and method of fabricating and driving the same

Memory cell arrays

Variable resistive memory device and method of fabricating the same

Resistive switching devices and methods of formation thereof

Methods of forming memory structures and methods of forming memory arrays

Memory cells and memory cell formation methods using sealing material

Circuit and system for using junction diode as program selector for one-time programmable devices

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

Memory cell device and method of manufacture

Combined conductive plug/conductive line memory arrays and methods of forming the same

Post-fabrication self-aligned initialization of integrated devices

High current capable access device for three-dimensional solid-state memory

Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor

3D solid-state arrangement for solid state memory

Memory arrays and methods of forming same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Memory cells having heaters with angled sidewalls

Memory cells

Method for forming Ge-Sb-Te film and storage medium

Programmable metallization cell with two dielectric layers

Resistive memory cell structures and methods

Phase-change memory cell

SEMICONDUCTOR MEMORY DEVICE, MEMORY CHIP, MEMORY MODULE, MEMORY SYSTEM AND METHOD FOR FABRICATING THE SAME

Semiconductor devices having a vertical diode and methods of manufacturing the same

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Resistive random access memory device

Semiconductor device and manufacturing method thereof

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Stacked RRAM array with integrated transistor selector

Phase change memory devices, method for encoding, and methods for storing data

Data storage device and methods of manufacturing the same

Horizontally oriented and vertically stacked memory cells

Contact for memory cell

Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks

Memory cells having a plurality of heaters

Protruding post resistive memory devices

Semiconductor memory device having three-dimensionally arranged resistive memory cells

Memory device including transistor array with shared plate channel and method for making the same

Memory arrays and methods of forming memory cells

Memory device having vertical selection transistors with shared channel structure and method for making the same

E-fuses containing at least one underlying tungsten contact for programming

Memory cells and integrated devices

Non-volatile memory devices having dual heater configurations and methods of fabricating the same

Germanium antimony telluride materials and devices incorporating same

Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same

METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

Memory devices with three-dimensional selection structures for memory cell arrays

Stressed phase change materials

Phase change memory devices and methods of manufacturing the same

PHASE-CHANGE MEMORY DEVICE

Method of fabricating non-volatile memory device having small contact and related devices

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Electronic devices, memory devices and memory arrays

Non-volatile memory device having conductive buffer pattern and method of fabricating the same

PHASE-CHANGE MEMORY DEVICE HAVING MULTI-LEVEL CELL AND A METHOD OF MANUFACTURING THE SAME

Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating

Memory cells and memory cell arrays

HEAT SHIELD LINER IN A PHASE CHANGE MEMORY CELL

Germanium antimony telluride materials and devices incorporating same

Highly integrated programmable non-volatile memory and manufacturing method thereof

Semiconductor memory device and manufacturing method thereof

Non-volatile memory device

Phase change random access memory and method for manufacturing the same

Resistive switching devices having alloyed electrodes and methods of formation thereof

Semiconductor device and manufacturing method thereof

Phase change memory cell having vertical channel access transistor

Resistive memory device having vertical transistors and method for making the same

Combinatorial screening methods and apparatus

Methods, apparatuses, and circuits for programming a memory device

Phase change memory device

Phase change memory and method of fabricating same

Phase change memory cells including nitrogenated carbon materials, methods of forming the same, and phase change memory devices including nitrogenated carbon materials

Nonvolatile memory cell, nonvolatile memory device and method for driving the same

Nonvolatile memory cell, nonvolatile memory device and method for driving the same

Nonvolatile memory cell, nonvolatile memory device and method for driving the same

Semiconductor devices with vertical structure including data storage layer or pattern

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Semiconductor device and method of fabricating the same

Phase change memory electrode with sheath for reduced programming current

Memory architecture and cell design employing two access transistors

Memory device and method of manufacturing the same

Phase change current density control structure

Methods of forming a phase change material

Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device

SEMICONDUCTOR MEMORY DEVICE HAVING A THREE-DIMENSIONAL STRUCTURE

Planar phase-change memory cell with parallel electrical paths

Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Planar phase-change memory cell with parallel electrical paths

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array

Resistive memory and methods of processing resistive memory

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same

Memory arrays

MULTILAYER STRUCTURE COMPRISING A PHASE CHANGE MATERIAL LAYER AND METHOD OF PRODUCING THE SAME

Phase-change memory device and flexible phase-change memory device insulating nano-dot

Pore phase change material cell fabricated from recessed pillar

Compressive Structure for Enhancing Contact of Phase Change Material Memory Cells

Memory element having ion source layers with different contents of a chalcogen element

Memory device

Phase change memory device having an improved word line resistance, and methods of making same

Synthesis and use of precursors for ALD of group VA element containing thin films

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Ge-Rich GST-212 phase change memory materials

Phase change memory devices having buried metal silicide patterns

Phase change memory cell

Method for making phase change memory

Methods of manufacturing phase-change memory devices

Variable resistance memory device having reduced bottom contact area and method of forming the same

Phase Change Memory Device

Methods of forming variable resistive memory devices

Phase change memory and method for fabricating phase change memory

Memory element and memory device

Three-dimensional semiconductor memory devices having double cross point array and methods of fabricating the same

Semiconductor devices and methods of manufacturing the same

Processing phase change material to improve programming speed

Method to selectively grow phase change material inside a via hole

Phase change memory structures and methods

Process of producing a resistivity-change memory cell intended to function in a high-temperature environment

Semiconductor device and semiconductor device manufacturing method

Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same

Variable resistance memory device and methods of forming the same

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Vertical interconnect structure, memory device and associated production method

Memory devices and method of manufacturing the same

Shaping a Phase Change Layer in a Phase Change Memory Cell

Phase-Change Memory and a Method of Programming the Same

Memory element and memory device with ion source layer and resistance change layer

METHOD FOR FABRICATING VARIABLE RESISTANCE MEMORY DEVICE

METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

Isolation device free memory

Semiconductor storage device with memory cell utilized as a set-dedicated memory cell

Memory cells

Semiconductor memory device

Semiconductor device and method of manufacturing the same

Fabricating current-confining structures in phase change memory switch cells

Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same

Flat lower bottom electrode for phase change memory cell

Resistance variable memory cells and methods

Chemical mechanical polishing composition and method for polishing phase change alloys

Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys

Methods of selectively forming metal-doped chalcogenide materials, methods of selectively doping chalcogenide materials, and methods of forming semiconductor device structures including same

Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process

Phase change memory devices with relaxed stress

Method of manufacturing a phase change semiconductor device and the phase change semiconductor device

Semiconductor storage device

Methods for forming arrays of small, closely spaced features

Semiconductor device and its manufacturing method

Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory

Memory component having an electrical contact free of a metal layer

Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells array of nonvolatile memory cells

Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells

Methods of forming circuitry components and methods of forming an array of memory cells

Vertical memory cell for high-density memory

Semiconductor device

Semiconductor phase change memory using multiple phase change layers

Diode for variable-resistance material memories, processes of forming same, and methods of using same

Memory cells, methods of forming memory cells and methods of forming memory arrays

Phase change device having phase change recording film, and phase change switching method for phase change recording film

Methods of forming vertical field-effect transistor with self-aligned contacts for memory devices with planar periphery/array and intermediate structures formed thereby

Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells

Integrated circuit semiconductor devices including channel trenches and related methods of manufacturing

Semiconductor storage device and method for manufacturing same

Vertical transistor phase change memory

Resistance change nonvolatile semiconductor memory device

Methods of self-aligned growth of chalcogenide memory access device

SEMICONDUCTOR MEMORY

Memory cells, memory cell arrays, methods of using and methods of making

Methods of forming memory cells

Lateral phase change memory

Memory cell

Memory element and memory device

Phase-change material and phase-change type memory device

Memory cell having heater material and variable resistance material embedded within insulating material

Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same

Methods of forming phase change material layers and methods of manufacturing phase change memory devices

Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

3D polysilicon diode with low contact resistance and method for forming same

PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

VARIABLE RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME