209066 ⎘
Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory; Selection of switching materials; Compounds of sulfur, selenium or tellurium, e.g. chalcogenides Tellurides, e.g. GeSbTe
Memory cell constructions
#1502Self-aligned cross-point phase change memory-switch array
#1503Variable resistance memory device and method of manufacturing the same
#1504High density low power nanowire phase change material memory device
#1505Circuit and system of using junction diode as program selector for one-time programmable devices
#1506Diamond type quad-resistor cells of PRAM
#1507Resistive memory cell fabrication methods and devices
#1508Forming a phase change memory with an ovonic threshold switch
#1509Method of making a multicomponent film
#1510Non-volatile programmable device including phase change layer and fabricating method thereof
#1511Semiconductor memory devices and methods of forming the same
#1512Embedded Semiconductor Device Including Phase Changeable Random Access Memory Element and Method of Fabricating the Same
#1513Semiconductor storage device
#1514Semiconductor memory device
#1515Semiconductor device including phase change material and method of manufacturing same
#1516Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
#1517Polysilicon emitter BJT access device for PCRAM
#1518Phase change memory cell array with self-converged bottom electrode and method for manufacturing
#1519Memory devices and formation methods
#1520Composite target sputtering for forming doped phase change materials
#1521Phase change memory cell structure
#1522Vertical nonvolatile memory device including a selective diode
#1523SWITCHING DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
#1524VARIABLE RESISTANCE MEMORY
#1525Semiconductor memory devices and methods of fabricating the same
#1526Methods of forming germanium-antimony-tellurium materials and methods of forming a semiconductor device structure including the same
#1527Phase change memory with fast write characteristics
#1528Single mask adder phase change memory element
#1529Bipolar switching memory cell with built-in “on ”state rectifying current-voltage characteristics
#1530Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
#1531Method for fabricating a phase change memory
#15323D semiconductor memory device and manufacturing method thereof
#1533Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same
#1534Phase change memory device and fabrication method thereof
#1535Phase change memory device and method of manufacturing the same
#1536Three-terminal cascade switch for controlling static power consumption in integrated circuits
#1537Semiconductor device having resistive device
#1538METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICE
#1539Method of manufacturing variable resistance memory device
#1540CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS
#1541Diode and memory device having a diode
#1542Phase change material cell with stress inducer liner
#1543Memory element and memory device
#1544Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof
#1545Non-volatile memory having 3D array of read/write elements with low current structures and methods thereof
#1546Methods for manufacturing a phase-change memory device
#1547Method of forming resistance variable memory device
#1548Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
#1549Methods of forming a memory device
#1550Three-dimensional memory structures having shared pillar memory cells
#1551Concentric phase change memory element
#1552Self-aligned, planar phase change memory elements and devices, systems employing the same and methods of forming the same
#1553Nonvolatile memory device and method of manufacturing the same
#1554Thermally insulated phase material cells
#1555Storage node, phase change memory device and methods of operating and fabricating the same
#1556Thermally insulated phase change material memory cells
#1557Semiconductor memory device including buffer electrode
#1558NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#1559Chalcogenide containing semiconductors with chalcogenide gradient
#1560Method of manufacturing a variable resistance memory device
#1561Low temperature GST process
#1562Method to reduce a via area in a phase change memory cell
#1563In via formed phase change memory cell with recessed pillar heater
#1564Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors
#1565AMORPHOUS GE/TE DEPOSITION PROCESS
#1566Methods of forming a phase change material
#1567Methods of forming electrical components and memory cells
#1568Method for forming Ge-Sb-Te film and storage medium
#1569Method for forming Ge-Sb-Te film and storage medium
#1570Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#1571Memory cells, methods of programming memory cells, and methods of forming memory cells
#1572SEMICONDUCTOR DEVICE
#1573Nonvolatile memory cells and methods of forming nonvolatile memory cell
#1574Memory cell device and method of manufacture
#1575Stacked multiple cell nonvolatile memory device
#1576Phase change memory cell
#1577RESISTANCE CHANGE TYPE MEMORY
#1578Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
#1579Semiconductor device
#1580Phase change memory cell structures and methods
#1581Manufacturing method of a memory device with a reversible variable-resistance memory layer between electrodes extending along intersecting directions
#1582Nonvolatile memory device and manufacturing method thereof
#1583Phase change material for a phase change memory device and method for adjusting the resistivity of the material
#1584Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
#1585Methods of manufacturing non-volatile phase-change memory devices
#1586Semiconductor devices and methods of forming the same
#1587Semiconductor phast change memory using multiple phase change layers
#1588Contact structure in a memory device
#1589Low operational current phase change memory structures
#1590Semiconductor memory
#1591Thermally stabilized electrode structure
#1592PCRAM with current flowing laterally relative to axis defined by electrodes
#1593Semiconductor memory
#1594Electronic devices, memory devices and memory arrays
#1595Resistance variable memory cell
#1596SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#1597Multiple bit phase change memory cell
#1598PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF
#1599Memory element and memory device
#1600Phase change memory device, storage system having the same and fabricating method thereof
#1601Pitch multiplied mask patterns for isolated features
#1602Memory element and memory device
#1603Semiconductor device including a phase-change memory element
#1604Resistive memory architectures with multiple memory cells per access device
#1605Method for thin film memory
#1606Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines
#1607Phase change memory structures and methods
#1608Phase change memory structures and methods
#1609Memory cells and methods of forming memory cells
#1610Post-fabrication self-aligned initialization of integrated devices
#1611SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING PROCESS AND METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME
#1612Circuit and system of using at least one junction diode as program selector for memories
#1613Memory using a plurality of diodes as program selectors with at least one being a polysilicon diode
#1614Memory devices using a plurality of diodes as program selectors with at least one being a polysilicon diode
#1615Programmably reversible resistive device cells using CMOS logic processes
#1616Sensing circuit for programmable resistive device using diode as program selector
#1617Reversible resistive memory using diodes formed in CMOS processes as program selectors
#1618Circuit and system of using a junction diode as program selector for resistive devices
#1619Reversible resistive memory using polysilicon diodes as program selectors
#1620Programmably reversible resistive device cells using polysilicon diodes
#1621Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processes
#1622One-Time Programmable memories using junction diodes as program selectors
#1623Circuit and system of using junction diode as program selector for one-time programmable devices
#1624One-time programmable memories using polysilicon diodes as program selectors
#1625Circuit and system of using polysilicon diode as program selector for one-time programmable devices
#1626Memory devices using a plurality of diodes as program selectors for memory cells
#1627Method of forming semiconductor device having self-aligned plug
#1628Phase change memory device comprising bismuth-tellurium nanowires
#1629Encapsulated phase change cell structures and methods
#1630Small footprint phase change memory cell
#1631Resistance random access memory structure for enhanced retention
#1632Semiconductor device and method of manufacturing the same
#1633Amorphous semiconductor layer memory device
#1634Method of making a multicomponent film
#1635Forming resistive random access memories together with fuse arrays
#1636Phase-Change Memory Units and Phase-Change Memory Devices Using the Same
#1637Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same
#1638Confined resistance variable memory cells and methods
#1639Polysilicon plug bipolar transistor for phase change memory
#1640Vertical phase change memory cell
#1641Confined resistance variable memory cell structures and methods
#1642Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks
#1643Optimized solid electrolyte for programmable metallization cell devices and structures
#1644Phase change memory device to prevent thermal cross-talk and method for manufacturing the same
#1645PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#1646Semiconductor device and method of fabricating the same
#1647METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY
#1648Memory element and memory device
#1649Memory element and drive method for the same, and memory device
#1650Resistance change type memory
#1651PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#1652PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#1653Phase-change memory device and method of fabricating the same
#1654Phase change memory cell with heater and method therefor
#1655Method Of Polishing Chalcogenide Alloy
#1656Methods for forming memory devices with reduced operational energy in phase change material
#1657High-precision resistor and trimming method thereof
#1658Avoiding degradation of chalcogenide material during definition of multilayer stack structure
#1659Polishing slurry for chalcogenide alloy
#1660Planar phase-change memory cell with parallel electrical paths
#1661Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#1662NONVOLATILE MEMORY DEVICE
#1663Method for manufacturing semiconductor memory element and sputtering apparatus
#1664PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
#1665Phase change memory device and method for manufacturing the same
#1666Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor
#1667Method for forming a lateral phase change memory element
#1668Horizontally oriented and vertically stacked memory cells
#1669Self-aligned bit line under word line memory array
#1670Variable resistance memory device having reduced bottom contact area and method of forming the same
#1671Nano-dimensional non-volatile memory cells
#1672Methods for fabricating phase change memory devices
#1673Method fabricating phase-change semiconductor memory device
#1674Method of forming semiconductor device having common node that contacts plural stacked active elements and that has resistive memory elements corresponding to the active elements
#1675Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof
#1676Method for making a bottom electrode geometry for phase change memory
#1677Memory arrays
#1678Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines
#1679Electrical fuse device based on a phase-change memory element and corresponding programming method
#1680Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
#1681Semiconductor device having stacked structural bodies and method for manufacturing the same
#1682Method and apparatus for trench and via profile modification
#1683Phase change memory cell structures and methods
#1684Resistance variable memory cell structures and methods
#1685Resistance change memory including a resistive element
#1686PHASE-CHANGE MEMORY DEVICES HAVING STRESS RELIEF BUFFERS
#1687Semiconductor processing
#1688Methods of forming conductive layer patterns using gas phase cleaning process and methods of manufacturing semiconductor devices
#1689Composite resistance variable element and method for manufacturing the same
#1690Forming electrodes for chalcogenide containing devices
#1691Self aligned fin-type programmable memory cell
#1692SEMICONDUCTOR DEVICE
#1693Semiconductor device
#1694Semiconductor memory and method of manufacturing the same
#1695Forced ion migration for chalcogenide phase change memory device
#1696Resistive memory and methods of processing resistive memory
#1697Semiconductor memristor devices
#1698Phase change memory device with air gap
#1699Antimony and germanium complexes useful for CVD/ALD of metal thin films
#1700Vacuum jacket for phase change memory element
#1701High concentration nitrogen-containing germanium telluride based memory devices and processes of making
#1702Vertical transistor phase change memory
#1703Double patterning method for creating a regular array of pillars with dual shallow trench isolation
#1704Variable resistance memory devices having reduced reset current
#1705Vertical interconnect structure, memory device and associated production method
#1706Method for fabricating a phase-change memory cell
#1707THREE-DIMENSIONAL PHASE CHANGE MEMORY
#1708Phase change memory device with plated phase change material
#1709Phase change memory cell and manufacturing method thereof using minitrenches
#1710Semiconductor memory device
#1711Non-volatile memory with resistive access component
#1712Methods of forming phase-change memory devices and devices so formed
#1713Resistance change memory
#1714Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
#1715MEMORY ELEMENTS USING SELF-ALIGNED PHASE CHANGE MATERIAL LAYERS AND METHODS OF MANUFACTURING SAME
#1716Memory device and method of making same
#1717Post deposition method for regrowth of crystalline phase change material
#1718Method for fabricating a phase-change memory cell
#1719Forming phase change memory cells
#1720Method for fabricating phase change memory device using solid state reaction
#1721Programmable via devices in back end of line level
#1722Phase change memory cell having vertical channel access transistor
#1723Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
#1724SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
#1725Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same
#1726Semiconductor device and its manufacturing method
#1727Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
#1728Reprogrammable fuse structure and method
#1729Solid-state memory manufacturing method
#1730Phase change current density control structure
#1731APPARATUS AND METHOD FOR FABRICATING A PHASE-CHANGE MATERIAL LAYER
#1732Non-volatile memory device having bottom electrode
#1733Phase change memory
#1734PHASE CHANGE MEMORY DEVICE, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF
#1735Post deposition method for regrowth of crystalline phase change material
#1736Phase Change Material Memory Device
#1737Resistive Memory Structure with Buffer Layer
#1738Pore phase change material cell fabricated from recessed pillar
#1739Phase Changeable Memory Devices and Methods of Forming the Same
#1740Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowires
#1741GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
#1742Phase change memory device
#1743Phase-change memory and fabrication method thereof
#1744Memory component and memory device
#1745Deposition of amorphous phase change material
#1746Reducing drift in chalcogenide devices
#1747Processing phase change material to improve programming speed
#1748Method for making self aligning pillar memory cell device
#1749Phase change memory device capable of increasing sensing margin and method for manufacturing the same
#1750Methods of self-aligned growth of chalcogenide memory access device
#1751Manufacturing method for pipe-shaped electrode phase change memory
#1752Phase change memory that switches between crystalline phases
#1753Semiconductor memory devices and methods of forming the same
#1754Structures for resistance random access memory and methods of forming the same
#1755PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF
#1756VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME
#1757PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE
#1758Self-selecting PCM device not requiring a dedicated selector transistor
#1759Memory device
#1760MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY
#1761Fabricating current-confining structures in phase change memory switch cells
#1762Phase change memory device having 3 dimensional stack structure and fabrication method thereof
#1763Phase change memory device capable of reducing disturbance
#1764Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same
#1765Phase change memory with various grain sizes
#1766Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same
#1767Phase change memory cell with filled sidewall memory element and method for fabricating the same
#1768Resistance change memory and manufacturing method thereof
#1769Memory including a selector switch on a variable resistance memory cell
#1770Phase-change memory device, phase-change channel transistor and memory cell array
#1771Keyhole-free sloped heater for phase change memory
#1772Resistance change memory and manufacturing method thereof
#1773Alteration method and alteration apparatus for titanium nitride
#1774Method of forming variable resistance memory device
#1775High density low power nanowire phase change material memory device
#1776Memory device and CBRAM memory with improved reliability
#1777Single mask adder phase change memory element
#1778Single mask adder phase change memory element
#1779High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof
#1780Memory cell and select element
#1781Multiple phase change materials in an integrated circuit for system on a chip application
#1782Phase change memory device suitable for high temperature operation
#1783Programmable resistance memory element
#1784Antimony compounds useful for deposition of antimony-containing materials
#1785Methods of forming pattern structures and methods of manufacturing semiconductor devices using the same
#1786Phase Changeable Memory Devices
#1787Single Crystal Phase Change Material
#1788Phase change material, a phase change random access memory device including the phase change material, and a semiconductor structure including the phase change material
#1789Four-terminal reconfigurable devices
#1790Methods, structures and devices for increasing memory density
#1791Semiconductor device and method of manufacturing the same
#1792Methods for reducing recrystallization time for a phase change material
#1793Thin-film memory system equipped with a thin-film address decoder and memory controller
#1794Phase change memory with diodes embedded in substrate
#1795SEMICONDUCTOR DEVICE
#1796Memory using tunneling field effect transistors
#1797Self-Aligned Bipolar Junction Transistors
#1798Variable resistance materials with superior data retention characteristics
#1799INFORMATION RECORDING MEDIUM, MANUFACTURING METHOD THEREFOR, AND SPUTTERING TARGET
#1800Phase change devices