Memory devices having electrodes comprising nanowires, systems including same and methods of forming same

Method for making a self aligning memory device

PHASE-CHANGE MEMORY DEVICE

Phase change random access memory device and method of manufacturing the same

Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same

PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF

Memory device and storage apparatus

Manufacturing a phase change memory device having a ring heater

Nonvolatile memory device and method for manufacturing same

Information recording and reproducing device

Phase change memory devices having a current increase unit

Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same

METHOD FOR FABRICATING PHASE CHANGE MEMORY DEVICE

Embedded phase-change memory and method of fabricating the same

Phase change memory cell with constriction structure

3D polysilicon diode with low contact resistance and method for forming same

Phase change memory structure with multiple resistance states and methods of programming and sensing same

Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same

Memory devices and formation methods

Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices

Method for forming a reduced active area in a phase change memory structure

Method of manufacturing nonvolatile memory device

In via formed phase change memory cell with recessed pillar heater

THERMALLY SHIELDED RESISTIVE MEMORY ELEMENT FOR LOW PROGRAMMING CURRENT

PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING PHASE-CHANGE MEMORY DEVICE

Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same

Phase change memory devices and methods for fabricating the same

Phase change RAM device and method for fabricating the same

Flat lower bottom electrode for phase change memory cell

Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell

Single mask adder phase change memory element

Non-volatile memory device including phase-change material

Non-volatile memory device including phase-change material

Non-volatile memory device including phase-change material

PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY

Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment

SEMICONDUCTOR DEVICE

Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition

Phase change memory cell and devices containing same

Phase change memory device with plated phase change material

Method for making a phase change memory device with vacuum cell thermal isolation

Memory device made from stacked substrates bonded with a resin containing conductive particles

Phase change memory devices

Electronic component, and a method of manufacturing an electronic component

PHASE CHANGE MEMORY DEVICE

Self-aligned memory cells and method for forming

Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials

Information recording and reproducing device

Method of fabricating Ag-doped Te-based nano-material and memory device using the same

Nonvolatile memory device with recording layer having two portions of different nitrogen amounts

Method of forming a semiconductor device having a metal silicide and alloy layers as electrode

Heater and memory cell, memory device and recording head including the heater

Self-align planerized bottom electrode phase change memory and manufacturing method

Resistor random access memory cell with reduced active area and reduced contact areas

Phase change memory cell structure

ELECTRONIC COMPONENT COMPRISING A CONVERTIBLE STRUCTURE

Semiconductor memory device

Arsenic-containing variable resistance materials

Thermal protect PCRAM structure and methods for making

Non-volatile memory with active ionic interface region

Lateral phase change memory

Phase change memory cell with self-aligned vertical heater and low resistivity interface

Phase change memory structures

NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Thermally insulated phase change material memory cells with pillar structure

Hollow GST structure with dielectric fill

Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method

Phase change memory having one or more non-constant doping profiles

Phase change memory with finite annular conductive path

PHASE CHANGE MEMORY DEVICE HAVING PARTIALLY CONFINED HEATING ELECTRODES CAPABLE OF REDUCING HEATING DISTURBANCES BETWEEN ADJACENT MEMORY CELLS

Phase change memory device and method of manufacturing the same

Phase change memory device having an improved word line resistance, and methods of making same

Method and system of using nanotube fabrics as joule heating elements for memories and other applications

Method for fabricating an integrated circuit including resistivity changing material having a planarized surface

Semiconductor device and method of manufacturing the same

Method of forming a vertical diode and method of manufacturing a semiconductor device using the same

Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same

Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State

Memory including vertical bipolar select device and resistive memory element

Encapsulated phase change cell structures and methods

Phase-change memory and method of making same

Phase-change memory device using a variable resistance structure

Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Solid-state memory device, data processing system, and data processing device

Phase change memory having stabilized microstructure and manufacturing method

CHALCOGENIDE FILM AND METHOD OF MANUFACTURING SAME

Phase change memory device having bit-line discharge block and method of fabricating the same

Methods, structures, and devices for reducing operational energy in phase change memory

PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER

SEMICONDUCTOR MEMORY DEVICE, MANUFACTURING METHOD THEREOF, DATA PROCESSING SYSTEM, AND DATA PROCESSING DEVICE

Breakdown layer via lateral diffusion

Semiconductor device having a conductive structure including oxide and non oxide portions

Buried silicide structure and method for making

Etching of tungsten selective to titanium nitride

Memory structure with reduced-size memory element between memory material portions

Nonvolatile memory cell, nonvolatile memory device and method for driving the same

Phase change memory cell having vertical channel access transistor

Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Electronic device comprising a convertible structure

Phase change memory cells having vertical channel access transistor and memory plane

Phase change memory device and manufacturing method

Resistive memory cell accessed using two bit lines

One-transistor, one-resistor, one-capacitor phase change memory

Memory cell having GeN-containing material and variable resistance material embedded within insulating material

Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device

Memory devices and methods of forming the same

Programmable resistance memory and method of making same

Multi-value recording phase-change memory device, multi-value recording phase-change channel transistor, and memory cell array

Phase change devices

Three-dimensional phase-change memory array

Resistive memory structure with buffer layer

Multilayer structure comprising a phase change material layer and method of producing the same

Low operational current phase change memory structures

Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device

Integrated circuit 3D phase change memory array and manufacturing method

PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

Methods of forming phase change materials and methods of forming phase change memory circuitry

Memory device including an electrode having an outer portion with greater resistivity

Ring-shaped electrode and manufacturing method for same

Phase change memory structures

Memory device having wide area phase change element and small electrode contact area

Memory cell

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines

Phase-change random access memory device and method of manufacturing the same

Diamond type quad-resistor cells of PRAM

Semiconductor processing

Phase change material based temperature sensor

Storage element, method of manufacturing same, and semiconductor storage device

Composite film for phase change memory devices

Method of forming information storage pattern

Methods of forming a phase change memory device

Method for manufacturing nonvolatile storage device

Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same

Nonvolatile memory device and method for manufacturing same

Variable resistance non-volatile memory cells and methods of fabricating same

Phase-change random access memory device

Pitch multiplied mask patterns for isolated features

Methods of fabricating semiconductor devices

4Fself align side wall active phase change memory

Nonvolatile memory device

Vertical switch three-dimensional memory array

Resistive memory cell fabrication methods and devices

Phase-change memory element and method for fabricating the same

THIN FILM FORMING APPARATUS

Method of forming phase change material layer and method of fabricating phase change memory device

Resistance variable memory device and method of fabricating the same

Chemical-mechanical polishing method for polishing phase-change material and method of fabricating phase-change memory device using the same

Electrical Device with Improved Electrode Surface

Methods of manufacturing phase-changeable memory devices including upper and lower electrodes

Active material devices with containment layer

Multi-bit phase change memory devices

Semiconductor device

PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF

Treated Chalcogenide Layer for Semiconductor Devices

Method of forming phase change memory device

Resistor random access memory cell with L-shaped electrode

SOLID MEMORY

DEPOSITION OF CHALCOGENIDE MATERIALS VIA VAPORIZATION PROCESS

Methods of manufacturing phase change memory devices

Non-volatile memory device

Memory device having self-aligned cell structure

Semiconductor phase change memory using multiple phase change layers

SOLID MEMORY

Forming Phase Change Memory Cell With Microtrenches

Resistor random access memory cell device

Methods for manufacturing a phase-change memory device

Phase change memory with dual word lines and source lines and method of operating same

Method of forming memory cell using gas cluster ion beams

Inverted variable resistance memory cell and method of making the same

Semiconductor device and method of manufacturing the same

Current constricting phase change memory element structure

Reduced power consumption phase change memory and methods for forming the same

Method of fabricating phase-change memory device having TiC layer

Semiconductor memory device with three dimensional solid electrolyte structure, and manufacturing method thereof

Storage device

Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same

GST film thickness monitoring

Method and apparatus for forming an integrated circuit electrode having a reduced contact area

Semiconductor storage device

Polysilicon pillar bipolar transistor with self-aligned memory element

Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers

Solid-state memory and semiconductor device

Rewritable memory device based on segregation/re-absorption

RESISTANCE VARIABLE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Electronic device, and method of manufacturing an electronic device

Polysilicon plug bipolar transistor for phase change memory

Variable resistance memory devices and methods of forming variable resistance memory devices

Method to form high efficiency GST cell using a double heater cut

SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME

Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method

Phase change device having two or more substantial amorphous regions in high resistance state

Phase change memory device

LOW-VOLUME PHASE-CHANGE MATERIAL MEMORY CELL

CONTACT STRUCTURE, METHOD OF MANUFACTURING THE SAME, PHASE CHANGEABLE MEMORY DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING PHASE CHANGEABLE MEMORY DEVICE

ELECTRICAL FUSE DEVICE BASED ON A PHASE-CHANGE MEMORY ELEMENT AND CORRESPONDING PROGRAMMING METHOD

Self-aligned nano-cross-point phase change memory

PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING THERMAL BUDGET AND METHOD OF MANUFACTURING THE SAME

PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

Forming phase change memory cells

METHOD FOR ACTIVE PINCH OFF OF AN OVONIC UNIFIED MEMORY ELEMENT

Forming phase change memories with a breakdown layer sandwiched by phase change memory material

Vertical diode and method for manufacturing same and semiconductor memory device

PHASE CHANGE MEMORY DEVICE HAVING A REDUCED CONTACT AREA AND METHOD FOR MANUFACTURING THE SAME

Self-heating phase change memory cell architecture

Method fabricating nonvolatile memory device

Antimony precursor, phase-change memory device using the antimony precursor, and method of manufacturing the phase-change memory device

METHOD OF FORMING PHASE CHANGE LAYER AND METHOD OF MANUFCTURING PHASE CHANGE MEMORY DEVICE USING THE SAME

Three-dimensional memory structures having shared pillar memory cells

Electronic component, and a method of manufacturing an electronic component

Method of fabricating phase change memory cell

Multi-level memory cell having phase change element and asymmetrical thermal boundary

Resistive memory architectures with multiple memory cells per access device

Phase change memory

Dual insulating layer diode with asymmetric interface state and method of fabrication

NON-VOLATILE PROGRAMMABLE DEVICE INCLUDING PHASE CHANGE LAYER AND FABRICATING METHOD THEREOF

Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current

Phase change memory cell and manufacturing method

Phase change memory devices having dual lower electrodes and methods of fabricating the same

Methods of forming phase-changeable memory devices including an adiabatic layer

Phase change memory device and fabricating method therefor

Phase change memory

NON VOLATILE MEMORY CELLS INCLUDING A COMPOSITE SOLID ELECTROLYTE LAYER

Phase change memory with ovonic threshold switch

Memory device and storage apparatus

Phase change memory

CMOS-process-compatible programmable via device

Memory cell having a side electrode contact

Semiconductor device having efficient capacitor arrangement

PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

SLURRY COMPOSITION FOR GST PHASE CHANGE MEMORY MATERIALS POLISHING

Method of forming variable resistance memory device

Method and apparatus for trench and via profile modification

CMOS-process-compatible programmable via device

Non-volatile memory

Self-aligned three-dimensional non-volatile memory fabrication

VARIABLE RESISTANCE MEMORY DEVICE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME

Non-volatile memory cells including small volume electrical contact regions

Nonvolatile memory device

Variable resistance memory device and system thereof

Memory cells including nanoporous layers containing conductive material

Phase-change memory element

Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions

Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions

PHASE CHANGE MEMORY DEVICE HAVING REDUCED PROGRAMMING CURRENT AND METHOD FOR MANUFACTURING THE SAME

Memory array with a selector connected to multiple resistive cells

Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic

High level integration phase change memory device having an increased diode junction area and method for manufacturing the same

Metrology for GST film thickness and phase

Chemical mechanical polishing composition and methods relating thereto

Variable resistance memory device and methods of forming the same

Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same

Programmable metallization cell switch and memory units containing the same

Semiconductor device including air gap

Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same

NON-VOLATILE MEMORY CELL FORMATION

Memory devices and formation methods

Storage nodes including a phase chang layer and methods of manufacturing and operating the same, phase change memory devices and methods of manufacturing and operating the same

Heater and memory cell, memory device and recording head including the heater

VAPOR DEPOSITION METHOD FOR TERNARY COMPOUNDS

Semiconductor device with recording layer containing indium, germanium, antimony and tellurium

Phase change memory device having an inversely tapered bottom electrode

PHASE-CHANGE MATERIAL MEMORY CELL

PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME

Methods of forming multi-level cell of semiconductor memory

PRINTABLE IONIC STRUCTURE AND METHOD OF FORMATION

Dielectric-sandwiched pillar memory device

Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same

Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices

Integrated circuit

Memory device

Dielectric mesh isolated phase change structure for phase change memory

Damascene process for carbon memory element with MIIM diode

MIIM diodes having stacked structure

MIIM DIODES

Nonvolatile memory device

METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS

Semiconductor device with thermally coupled phase change layers

Method to reduce a via area in a phase change memory cell

Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells Therein

Non-volatile memory device

Semiconductor device

Phase change memory device with heater electrodes having fine contact area and method for manufacturing the same

Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods

Phase-change semiconductor device and methods of manufacturing the same

Semiconductor device and driving method of the same

Contact for memory cell

Thin film fuse phase change cell with thermal isolation pad and manufacturing method

METHOD OF FORMING A STRUCTURE HAVING A GIANT RESISTANCE ANISOTROPY OR LOW-K DIELECTRIC

Memory device structures including phase-change storage cells

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Programmable resistance memory devices and systems using the same and methods of forming the same

Phase change memory device having a bottleneck constriction and method of manufacturing the same

Phase change memory cell with MOSFET driven bipolar access device

Semiconductor storage device

Process for manufacturing a memory device including a vertical bipolar junction transistor and a CMOS transistor with spacers

Phase change memory device having heat sinks formed under heaters and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Apparatus and method for memory