Phase changeable memory cell array region and method of forming the same

I-shaped phase change memory cell

Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device

Process for fabricating piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Phase change memory materials

Concentric phase change memory element

Phase change material and methods of forming the phase change material

Device for storing data with optical addressing

Plasma treating methods of fabricating phase change memory devices, and memory devices so fabricated

Combinatorial screening method and apparatus

Nanoscale electrodes for phase change memory devices

Method of fabricating a phase-change memory

Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating

Multiple phase change materials in an integrated circuit for system on a chip application

Semiconductor memory

Integrated circuit including memory cell having cup-shaped electrode interface

Semiconductor devices having a planarized insulating layer

Electronic component, and a method of manufacturing an electronic component

Memory devices and methods of forming the same

Method and apparatus for non-volatile multi-bit memory

Four-terminal reconfigurable devices

Methods of forming a phase change material

Phase change memory structures and methods

Nonvolatile memory device and method of manufacturing the same

METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT

Programmable resistive memory cell with self-forming gap

Memory cell device with coplanar electrode surface and method

Vertical string phase change random access memory device

Memory device

Fully self-aligned pore-type memory cell having diode access device

Phase change random access memory device, method of fabricating the same, and method of operating the same

Phase-change memory device and method of fabricating the same

Multi-layer phase-changeable memory devices

MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE

Method of forming a seam-free tungsten plug

Bridge resistance random access memory device and method with a singular contact structure

MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE

Write-once memory array including phase-change elements and threshold switch isolation

Semiconductor device

Phase change memory

Phase-change memory device and method of fabricating the same

Method for forming chalcogenide switch with crystallized thin film diode isolation

Synthesis and use of precursors for ALD of tellurium and selenium thin films

Memory architecture and cell design employing two access transistors

Resistance memory element, phase change memory element, resistance random access memory device, information reading method thereof, phase change random access memory device, and information reading method thereof

Memory device and method for making same

Self-aligned vertical bipolar junction transistor for phase change memories

PHASE CHANGE MEMORY AND RECORDING MATERIAL FOR PHASE CHANGE MEMORY

Phase-change memory element

Phase change memory element with a peripheral connection to a thin film electrode

Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same

Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods forming the same

Phase-change memory cell with a patterned layer

Non-volatile memory device

Three-terminal cascade switch for controlling static power consumption in integrated circuits

Phase change memory device having protective layer and method for manufacturing the same

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Memory cells, memory cell arrays, methods of using and methods of making

Integrated circuit including vertical diode

Isolation trenches with conductive plates

Three-terminal cascade switch for controlling static power consumption in integrated circuits

Programmable via structure and method of fabricating same

Phase change memory cell having top and bottom sidewall contacts

Integrated circuit with upstanding stylus

Programmable via devices with air gap isolation

Antimony and germanium complexes useful for CVD/ALD of metal thin films

SWITCH ARRAY CIRCUIT AND SYSTEM USING PROGRAMMABLE VIA STRUCTURES WITH PHASE CHANGE MATERIALS

Asymmetric-threshold three-terminal switching device

Thin film input/output

Standalone thin film memory

Thin film logic circuitry

Integrated circuit including an array of diodes coupled to a layer of resistance changing material

Thin-film memory system having thin-film peripheral circuit and memory controller for interfacing with a standalone thin-film memory

Phase change memory device having decreased contact resistance of heater and method for manufacturing the same

Phase change memory devices and their methods of fabrication

Multi-bit phase-change memory device

Semiconductor device

Memory and access device and method therefor

Self-aligned in-contact phase change memory device

Method for manufacturing Chalcogenide devices

Phase change random access memory and methods of manufacturing and operating same

Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same

Method for manufacturing a nonvolatile storage device

Phase change memory devices and methods for fabricating the same

Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same

Phase change memory cell with reduced switchable volume

Programmable via devices

Nonvolatile memory device and method for manufacturing same

Short bridge phase change memory cells

Phase change memory with tapered heater

Phase change memory devices and fabrication methods thereof

Process for PCM integration with poly-emitter BJT as access device

Information recording medium, target and method for manufacturing of information recording medium using the same

Phase-change memory device including biasing circuit

METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE

Optimized solid electrolyte for programmable metallization cell devices and structures

Nonvolatile storage device and method for manufacturing same

PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATION

Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same

Phase change device having two or more substantial amorphous regions in high resistance state

Resistive changing device

Phase change memory device having phase change material layer containing phase change nano particles

Phase change memory device

Slurry for polishing phase change material and method for patterning polishing phase change material using the same

BICYCLIC GUANIDINATES AND BRIDGING DIAMIDES AS CVD/ALD PRECURSORS

Methods for forming arrays of small, closely spaced features

Method for manufacturing phase change memory device

Phase change memory device and method of manufacture

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

PHASE CHANGE MEMORY DEVICE HAVING HEATERS AND METHOD FOR MANUFACTURING THE SAME

METHODS OF FORMING CHALCOGENIDE FILMS AND METHODS OF MANUFACTURING MEMORY DEVICES USING THE SAME

Multilayer storage class memory using externally heated phase change material

Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication

Non-volatile memory device and method of fabricating the same

Memory cell having a buried phase change region and method for fabricating the same

Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same

Memory cell having improved mechanical stability

Phase change memory element and method for forming the same

PHASE CHANGE MEMORY DEVICE

Semiconductor integrated circuit device

Phase-change memory device

Reducing drift in chalcogenide devices

Information recording medium and method for producing the same

Etching process for phase-change films

Contact structure, a semiconductor device employing the same, and methods of manufacturing the same

Thermally stabilized electrode structure

PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER FOR PROTECTING PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME

Phase change memory device

Memory device manufacturing method

ELECTRODE FORMED IN APERTURE DEFINED BY A COPOLYMER MASK

Semiconductor device and its fabrication method

Integrated circuit including memory element doped with dielectric material

Method of fabricating a phase change memory and phase change memory

Phase-change ram and method for fabricating the same

Methods of fabricating semiconductor device including phase change layer

Phase change memory cell with constriction structure

Non-volatile memory with resistive access component

Self-aligned memory cells and method for forming

RESISTIVE MEMORY DEVICES

Resistive memory device

Phase Change Memory Device

Temperature and pressure control methods to fill features with programmable resistance and switching devices

Method of forming ring electrode

Pressure extrusion method for filling features in the fabrication of electronic devices

Memory device

Integrated Circuit, Memory Module, and Method of Manufacturing an Integrated Circuit

Nonvolatile memory device and manufacturing method for the same

Method of making a vertical phase change memory (PCM) and a PCM device

Integrated circuit including an electrode having an outer portion with greater resistivity

Phase change memory

Memory Cell Layout

Semiconductor device and method of forming the same

Phase change memory device and fabrication method thereof

Integrated circuit fabricated using an oxidized polysilicon mask

Self-converging bottom electrode ring

Nonvolatile memory device and method of manufacturing the same

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Integrated circuit including U-shaped access device

Carbon diode array for resistivity changing memories

Electric device with a layer of conductive material contacted by nanowires

Semiconductor device and method for manufacturing the same

Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same

Phase change memory device

Heating center PCRAM structure and methods for making

Phase change element extension embedded in an electrode

High density chalcogenide memory cells

Memory devices, stylus-shaped structures, electronic apparatuses, and methods for fabricating the same

Phase-change memory

Phase change memory device with a novel electrode

PHASE-CHANGE MEMORY ELEMENT

Pore phase change material cell fabricated from recessed pillar

Non-volatile memory device and method of manufacturing the same

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Memory cell with memory element contacting an inverted T-shaped bottom electrode

Phase change memory cell with heater and method therefor

Phase change memory device and method of fabricating the same

Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET

PHASE CHANGE MEMORY DEVICE HAVING PLUG-SHAPED PHASE CHANGE LAYERS AND METHOD FOR MANUFACTURING THE SAME

Multi-level programmable PCRAM memory

Chalcogenide anti-fuse

3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same

Phase change memory cells delineated by regions of modified film resistivity

Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells

Phase-change memory device and method of manufacturing the same

Polysilicon emitter BJT access device for PCRAM

Storage node, phase change memory device and methods of manufacturing and operating the same

Phase change memory elements using self-aligned phase change material layers

Phase-change memory device capable of improving contact resistance and reset current and method of manufacturing the same

Non-volatile programmable variable resistance element

Phase change memory and method of fabricating the same

NON-VOLATILE MEMORY AND METHOD FOR FABRICATING THE SAME

Phase change memory with layered insulator

Integrated circuit including diode memory cells

Memory devices having contact features

Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions

Method for forming self-aligned thermal isolation cell for a variable resistance memory array

METHOD FOR FORMING PHASE-CHANGE MEMORY ELEMENT

Phase change magnetic material

Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods

Nitrogenated carbon electrode for chalcogenide device and method of making same

Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same

PHASE CHANGE MEMORY

Fabricating sub-lithographic contacts

Tellurium (Te) precursors for making phase change memory materials

Non-volatile memory devices having data storage layer

Semiconductor device and method of manufacturing the same

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Memory cell device with circumferentially-extending memory element

Active material devices with containment layer

Phase change RAM device and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Phase-change nonvolatile memory and manufacturing method therefor

Phase change alloy etch

Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials

Integrated circuit having memory cells and method of manufacture

Phase-changeable memory devices having reduced susceptibility to thermal interference

Integrated circuit having dielectric layer including nanocrystals

Phase change memory element

Phase change memory cell including a thermal protect bottom electrode and manufacturing methods

Small electrode for phase change memories

METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE CAPABLE OF IMPROVING THERMAL EFFICIENCY OF PHASE CHANGE MATERIAL

Phase change memory device capable of increasing sensing margin and method for manufacturing the same

Amorphous Ge/Te deposition process

Method of Forming Programmable Via Devices

Self aligned ring electrodes

Modulation of electromagnetic radiation with electrically controllable composite material

Phase Change Memory with Diodes Embedded in Substrate

Memory device

Method of producing phase change memory device

Method for making a self-converged void and bottom electrode for memory cell

Method of producing phase change memory device

Phase change memory devices and methods for fabricating the same

Method for manufacturing a resistor random access memory with a self-aligned air gap insulator

Programmable via devices

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

Method for making self aligning pillar memory cell device

Method for making a self-converged memory material element for memory cell

Vacuum jacketed electrode for phase change memory element

Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device

Phase change materials and associated memory devices

Storage node, phase change memory device and methods of operating and fabricating the same

Low area contact phase-change memory

Programmable resistive memory with diode structure

Method of depositing chalcogenide film for phase-change memory

Semiconductor phase change memory using multiple phase change layers

Phase change memory device and method of manufacturing the same

Phase change memory cell with roundless micro-trenches

Phase change memory structures

Phase change memory structures including pillars

Phase change memory device and fabricating method

Method of fabricating structures based on nanoparticles

Phase change memory device and fabrication method thereof

Phase change memory with various grain sizes

METHOD OF FORMING CHALCOGENIDE LAYER INCLUDING TE AND METHOD OF FABRICATING PHASE-CHANGE MEMORY DEVICE

Tellurium precursors for GST deposition

Buried low-resistance metal word lines for cross-point variable-resistance material memories

Higher threshold voltage phase change memory

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing

Phase-change memory cell and method of fabricating the phase-change memory cell

Programmable via structure for three dimensional integration technology

Method of electrodepositing germanium compound materials on a substrate

Phase change memory device, manufacturing method thereof and operating method thereof

Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

Phase change memory array and fabrication thereof

Method for chemical mechanical planarization of chalcogenide materials

Memory element with improved contacts

Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices

Phase change memory device and fabrication method thereof

Memory device

Phase change memory cell with first and second transition temperature portions

PHASE-CHANGE MEMORY ELEMENT

High density chalcogenide memory cells

Phase-change random access memory device and semiconductor memory device

Method for fabricating an integrated circuit including memory element with spatially stable material

System Including Memory with Resistivity Changing Material and Method of Making the Same

Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element

Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same

Integrated circuit including memory element with spatially stable material

Phase-change random access memory and method of manufacturing the same

Phase change material structure and related method

Phase-change memory element

Integrated circuit including memory element with high speed low current phase change material

Vertical side wall active pin structures in a phase change memory and manufacturing methods

Phase change memory devices and fabrication methods thereof

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PHASE CHANGE MATERIAL STRUCTURES

Integrated circuit having a cell with a resistivity changing layer

Phase change memory device and method of fabricating the same

INTEGRATED CIRCUIT INCLUDING MEMORY CELLS WITH TUNNEL FET AS SELECTION TRANSISTOR

Phase change memory with dual word lines and source lines and method of operating same

Phase change memory device having Schottky diode and method of fabricating the same

Programmable via devices with air gap isolation

Programmable via devices in back end of line level

Phase change memory bridge cell

Resistor random access memory structure having a defined small area of electrical contact

Liquid phase deposition of contacts in programmable resistance and switching devices

Methods for forming electrodes in phase change memory devices