ClassID:

248378

Y10T117/1048 - CPC Classification

Classification description:

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor; Apparatus for crystallization from liquid or supercritical state; Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon] Pulling includes a horizontal component

Recent Application in this class:
#1
20180202066
2018-07-19

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

#2
20160108549
2016-04-21

Apparatus and method for controlling thickness of a crystalline sheet grown on a melt

#3
20150322590
2015-11-12

Apparatus for processing a melt

#4
20140209016
2014-07-31

Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet

#5
20130263777
2013-10-10

APPARATUS FOR MANUFACTURING SILICON SUBSTRATE

#6
20130213295
2013-08-22

Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

#7
20120260849
2012-10-18

Method and apparatus for the production of crystalline silicon substrates

#8
20120186512
2012-07-26

Procedure for in-situ determination of thermal gradients at the crystal growth front

#9
20120048496
2012-03-01

Eddy current thickness measurement apparatus

#10
20110271899
2011-11-10

Removing a sheet from the surface of a melt using gas jets

#11
20110271897
2011-11-10

Gas-lift pumps for flowing and purifying molten silicon

#12
20100025885
2010-02-04

Method and apparatus for the production of crystalline silicon substrates

#13
20100024718
2010-02-04

Procedure for in-situ determination of thermal gradients at the crystal growth front

#14
20080105193
2008-05-08

Method and apparatus for crystal growth

#15
20080078321
2008-04-03

Method and apparatus for the production of crystalline silicon substrates

#16
20060249071
2006-11-09

Method and apparatus for crystal growth