Gilbert, Arizona
United States
34
2026-05-28
The entities that hold a legal rights for patent applications filed by inventor Margetis Joe:
Joe Margetis from Gilbert, US has applied for patents for these inventions. The list has both pending applications and granted patents:
COMBINATORIAL PRECURSOR CHEMISTRY FOR LOW TEMPERATURE
#2 | 2026-05-14REDUCED STRAIN Si/SiGe HETEROEPITAXY STACKS FOR 3D DRAM
#3 | 2026-03-05CYCLIC PROCESSING METHODS FOR DEFECT REDUCTION, AND RELATED APPARATUS, DEVICES, AND PROCESSING CHAMBERS
#4 | 2026-02-05METHODS OF EPITAXIALLY GROWING BORON-CONTAINING STRUCTURES
#5 | 2025-12-04GATE-ALL-AROUND (GAA) INTERFACE MODIFICATIONS TO IMPROVE ABRUPTNESS
#6 | 2025-11-27UV ENERGY SOURCES FOR PROCESSING CHAMBERS, AND RELATED APPARATUS AND METHODS
#7 | 2025-11-20INHIBITORS FOR SELECTIVE EPITAXIAL DEPOSITION
#8 | 2025-08-28METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIUM LAYERS
#9 | 2024-10-03METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRECURSORS
#10 | 2024-08-15METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILICON LAYERS, DEVICES FORMED USING THE METHODS, AND SYSTEMS FOR PERFORMING THE METHODS
#11 | 2024-05-02METHOD OF BLOCKING DIELECTRIC SURFACES USING BLOCKING MOLECULES TO ENABLE SELECTIVE EPI DEPOSITION
#12 | 2024-05-02SURFACE MODIFIERS FOR ENHANCED EPITAXIAL NUCLEATION AND WETTING
#13 | 2023-07-13METHODS OF EPITAXIALLY GROWING BORON-CONTAINING STRUCTURES
#14 | 2023-05-11METHODS FOR SELECTIVE DEPOSITION UTILIZING N-TYPE DOPANTS AND/OR ALTERNATIVE DOPANTS TO ACHIEVE HIGH DOPANT INCORPORATION
#15 | 2023-01-26METHODS OF FORMATION OF A SIGE/SI SUPERLATTICE
#16 | 2023-01-19REDUCED STRAIN Si/SiGe HETEROEPITAXY STACKS FOR 3D DRAM
#17 | 2022-09-29METHOD FOR DEPOSITING A GROUP IV SEMICONDUCTOR AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
#18 | 2021-12-02METHOD FOR DEPOSITING BORON AND GALLIUM CONTAINING SILICON GERMANIUM LAYERS
#19 | 2021-11-18Methods for silicon germanium uniformity control using multiple precursors
#20 | 2021-10-21Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
#21 | 2021-02-04Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
#22 | 2020-07-16Temperature-controlled flange and reactor system including same
#23 | 2020-03-12Method for depositing a group IV semiconductor and related semiconductor device structures
#24 | 2020-01-02Temperature-controlled flange and reactor system including same
#25 | 2019-01-24Method for depositing a group IV semiconductor and related semiconductor device structures
#26 | 2019-01-24Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
#27 | 2019-01-24Method for depositing a group IV semiconductor and related semiconductor device structures
#28 | 2019-01-10Methods for forming a silicon germanium tin layer and related semiconductor device structures
#29 | 2018-11-08Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
#30 | 2018-05-31Process for forming a film on a substrate using multi-port injection assemblies
#31 | 2017-12-28Formation of epitaxial layers via dislocation filtering
#32 | 2017-09-28Radial and thickness control via biased multi-port injection settings
#33 | 2017-06-01Methods of forming silicon germanium tin films and structures and devices including the films
#34 | 2017-02-16Methods of forming highly p-type doped germanium tin films and structures and devices including the films
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