Ashish Kumar

PROCESS AND TEMPERATURE COMPENSATED WORD LINE UNDERDRIVE SCHEME FOR SRAM

PROCESS AND TEMPERATURE COMPENSATED WORD LINE UNDERDRIVE SCHEME FOR SRAM

High speed SRAM using enhance wordline/global buffer drive

Reduced retention leakage SRAM

PULSED APPLICATION OF WORDLINE UNDERDRIVE (WLUD) FOR ENHANCING STABILITY OF STATIC RANDOM ACCESS MEMORY (SRAM) OPERATION IN A LOW SUPPLY VOLTAGE ENVIRONMENT

Optimization of broadcast and multicast frame delivery in power-save mode

Method and apparatus for enhancing read stability of a static random access memory circuit in low voltage operation

Method and apparatus for enhancing read stability of a static random access memory circuit in low voltage operation

Temperature compensated read assist circuit for a static random access memory (SRAM)

Circuit for generating a sense amplifier enable signal with variable timing

RETENTION OF DATA DURING STAND-BY MODE

Noise tolerant sense circuit

SRAM memory device and testing method thereof

Self-timed write boost for SRAM cell with self mode control

Architecture for reducing leakage component in semiconductor devices

Method and system for reducing power consumption in digital circuitry using charge redistribution circuits

Memory device with reduced leakage current

Logic device with reduced leakage current

Sense amplifier with feedback-controlled bitline access