Fishkill, New York
United States
20
2010-10-07
The entities that hold a legal rights for patent applications filed by inventor Peidous Igor:
Igor Peidous from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
#2 | 2010-04-22Stress enhanced transistor
#3 | 2010-04-01Method for fabricating interconnect structures for semiconductor devices
#4 | 2009-02-26STRESSED MOS DEVICE AND METHODS FOR ITS FABRICATION
#5 | 2009-01-29Integrated circuit employing variable thickness film
#6 | 2008-12-09Methods for fabricating a stressed MOS device
#7 | 2008-11-25Stressed MOS device and methods for its fabrication
#8 | 2008-10-23Stressed MOS device
#9 | 2008-10-02Methods for fabricating semiconductor substrates with silicon regions having differential crystallographic orientations
#10 | 2008-08-12Stressed MOS device and method for its fabrication
#11 | 2008-07-31Methods for fabricating low contact resistance CMOS circuits
#12 | 2008-06-19Stress enhanced transistor and methods for its fabrication
#13 | 2008-05-22Stress enhanced MOS transistor and methods for its fabrication
#14 | 2008-04-10Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof
#15 | 2008-03-25Methods for fabricating a CMOS device including silicide contacts
#16 | 2008-01-17Field effect transistors and methods for fabricating the same
#17 | 2007-11-01Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
#18 | 2007-03-29Methods for fabrication of a stressed MOS device
#19 | 2007-02-08Methods for fabricating a stressed MOS device
#20 | 2007-02-01Methods for fabricating a stressed MOS device
3665104 ⎘