Inventor profile of:

Ulrich Klostermann

City:

Munich

Country:

Germany

Published Applications:

26

Last publication date:

2025-03-06

Top Assignees for applications by Ulrich Klostermann

The entities that hold a legal rights for patent applications filed by inventor Klostermann Ulrich:

Recent patent applications by Klostermann Ulrich

Ulrich Klostermann from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-03-06
US20250076640A1
Physics

OPTICAL AND MANUFACTURING AWARE DESIGN FLOW FOR METASURFACES

#2 | 2010-04-08
US20100084741A1
Electricity

Integrated circuit

#3 | 2010-01-21
US20100013035A1
Electricity

Integrated circuit, memory module, and method of manufacturing an integrated circuit

#4 | 2010-01-07
US20100002501A1
Physics

MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations

#5 | 2009-12-31
US20090322319A1
Physics

Magnetoresistive sensor with tunnel barrier and method

#6 | 2009-12-31
US20090321860A1
Electricity

Integrated circuit having a magnetic tunnel junction device and method

#7 | 2009-11-05
US20090273967A1
Physics

Method and integrated circuit for determining the state of a resistivity changing memory cell

#8 | 2009-11-05
US20090273966A1
Physics

Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit

#9 | 2009-10-08
US20090251950A1
Physics

Integrated Circuit, Memory Cell Arrangement, Thermal Select Magneto-Resistive Memory Cell, Method of Operating a Thermal Select Magneto-Resistive Memory Cell, and Method of Manufacturing a Thermal Select Magneto-Resistive Memory Cell

#10 | 2009-09-17
US20090230379A1
Electricity

Integrated circuit, method of manufacturing an integrated circuit, and memory module

#11 | 2009-09-03
US20090218600A1
Physics

Memory Cell Layout

#12 | 2009-09-03
US20090218559A1
Electricity

Integrated Circuit, Memory Cell Array, Memory Module, and Method of Manufacturing an Integrated Circuit

#13 | 2009-08-27
US20090213642A1
Electricity

Memory cell using spin induced switching effects

#14 | 2009-07-30
US20090190409A1
Physics

Integrated Circuit, Cell Arrangement, Method for Operating an Integrated Circuit and for Operating a Cell Arrangement, Memory Module

#15 | 2009-04-23
US20090102015A1
Electricity

Integrated Circuit, Memory Cell Array, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing an Integrated Circuit

#16 | 2009-04-16
US20090097298A1
Physics

Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cell

#17 | 2009-04-02
US20090085121A1
Electricity

Condensed memory cell structure using a FinFET

#18 | 2009-03-19
US20090073749A1
Electricity

Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module

#19 | 2009-03-19
US20090073748A1
Physics

Integrated circuits; methods for operating an integrating circuit; memory modules

#20 | 2009-03-19
US20090073737A1
Electricity

Integrated Circuits; Methods for Manufacturing an Integrating Circuit; Memory Modules

#21 | 2009-03-19
US20090072348A1
Electricity

Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory Module

#22 | 2009-03-19
US20090072217A1
Electricity

Integrated circuits; methods for manufacturing an integrated circuit and memory module

#23 | 2009-01-15
US20090016096A1
Physics

Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module

#24 | 2008-12-18
US20080310210A1
Physics

Semiconductor memory device and method of operation

#25 | 2008-05-01
US20080100289A1
Physics

Magnetoresistive sensor element for sensing a magnetic field

#26 | 2008-04-24
US20080094881A1
Physics

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

InventorID:

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