United States
13
2014-08-14
The entities that hold a legal rights for patent applications filed by inventor SANDISK 3D LLC:
SANDISK 3D LLC from , US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask
#2 | 2014-08-14Resistance-switching memory cell with multiple raised structures in a bottom electrode
#3 | 2014-06-26Radiation enhanced resistive switching layers
#4 | 2014-06-26Limited maximum fields of electrode-switching layer interfaces in Re-RAM cells
#5 | 2014-06-26Bilayered Oxide Structures for ReRAM Cells
#6 | 2014-06-19IL-free MIM stack for clean RRAM devices
#7 | 2014-05-01Resistive random access memory cells having metal alloy current limiting layers
#8 | 2013-11-28METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE
#9 | 2013-11-28Methods and apparatus for increasing memory density using diode layer sharing
#10 | 2013-08-29Memory cell having an integrated two-terminal current limiting resistor
#11 | 2013-08-29Trap passivation in memory cell with metal oxide switching element
#12 | 2013-08-22Nonvolatile memory device having an electrode interface coupling region
#13 | 2013-08-22Method for forming metal oxides and silicides in a memory device
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