Grenoble
France
17
2013-10-10
The entities that hold a legal rights for patent applications filed by inventor Bensahel Daniel:
Daniel Bensahel from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:
Method for making a semi-conducting substrate located on an insulation layer
#2 | 2012-04-19Method for forming integrated circuits on a strained semiconductor substrate
#3 | 2011-05-12Single-crystal semiconductor layer with heteroatomic macro-network
#4 | 2010-12-16Process for transferring a layer of strained semiconductor material
#5 | 2010-11-18Method for making a semi-conducting substrate located on an insulation layer
#6 | 2008-10-30Process for transferring a layer of strained semiconductor material
#7 | 2008-10-02Electronic component manufacturing method
#8 | 2008-07-10Process for transferring a layer of strained semiconductor material
#9 | 2008-06-03Heteroatomic single-crystal layers
#10 | 2007-10-25Single-crystal semiconductor layer with heteroatomic macronetwork
#11 | 2006-10-31Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
#12 | 2006-04-25Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
#13 | 2006-01-24Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
#14 | 2005-11-17Process for transferring a layer of strained semiconductor material
#15 | 2005-10-11Process for transferring a layer of strained semiconductor material
#16 | 2005-02-17Process for fabricating strained layers of silicon or of a silicon/germanium alloy
#17 | 2005-02-03Method for forming a localized region of a material difficult to etch
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