🔗 Permalink

Inventor profile of:

Bruce FAURE

City:

Grenoble

Country:

France

Published Applications:

Last publication date:

2014-01-16

Top Assignees for applications by Bruce FAURE

The entities that hold a legal rights for patent applications filed by inventor FAURE Bruce:

S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 15 Bernin, France
SOITEC 7 Bernin, France
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, S.A. 3 Bernin, France
S.O.I Tec Silicon on Insulator Technologies 1 Bernin, France
Commissariat A L' Energie Atomique 1 Paris, France
SOITEC 1 Brenin, France
S.O.I.Tec Silicon on Insulator Technolgoies 1 Bernin, France

Recent patent applications by FAURE Bruce

Bruce FAURE from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-01-16

US20140014029A1

Performing operations; transporting

Method of fabricating a composite structure with a stable bonding layer of oxide

#2 | 2011-09-29

US20110237008A1

Electricity

Optoelectronic substrate and methods of making same

#3 | 2011-06-02

US20110127640A1

Electricity

Stiffening layers for the relaxation of strained layers

#4 | 2011-02-17

US20110039368A1

Electricity

Methods for making substrates and substrates formed therefrom

#5 | 2010-07-29

US20100190000A1

Performing operations; transporting

METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE

#6 | 2010-07-15

US20100178749A1

Electricity

Method of fabricating an epitaxially grown layer on a composite structure

#7 | 2010-01-21

US20100012947A1

Electricity

Process for making a GaN substrate

#8 | 2009-12-31

US20090321884A1

Electricity

Method of fabricating an epitaxially grown layer

#9 | 2009-11-26

US20090289332A1

Electricity

Methods for making substrates and substrates formed therefrom

#10 | 2009-09-17

US20090229743A1

Chemistry; metallurgy

Method of fabricating an epitaxially grown layer

#11 | 2009-08-13

US20090200569A1

Electricity

OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME

#12 | 2009-03-05

US20090061594A1

Electricity

Method of detaching a thin film by melting precipitates

#13 | 2008-09-04

US20080210975A1

Chemistry; metallurgy

Method of fabricating heteroepitaxial microstructures

#14 | 2007-12-13

US20070287273A1

Electricity

Methods for making substrates and substrates formed therefrom

#15 | 2007-06-21

US20070141803A1

Electricity

Methods for making substrates and substrates formed therefrom

#16 | 2007-06-05

US10716901

Method for fabricating a carrier substrate

#17 | 2007-04-12

US20070080372A1

Electricity

Composite structure with high heat dissipation

#18 | 2007-02-01

US20070022940A1

Electricity

Method for making a composite substrate and composite substrate according to the method

#19 | 2006-07-27

US20060166390A1

Electricity

Optoelectronic substrate and methods of making same

#20 | 2006-06-08

US20060118513A1

Chemistry; metallurgy

Method of fabricating an epitaxially grown layer

#21 | 2006-05-25

US20060110899A1

Electricity

Methods for fabricating a germanium on insulator wafer

#22 | 2006-05-04

US20060091400A1

Electricity

Composite structure with high heat dissipation

#23 | 2006-04-13

US20060076559A1

Electricity

Method of fabricating an epitaxially grown layer

#24 | 2005-12-08

US20050269671A1

Chemistry; metallurgy

Support for hybrid epitaxy and method of fabrication

#25 | 2005-12-01

US20050266626A1

Chemistry; metallurgy

Method of fabricating heteroepitaxial microstructures

#26 | 2005-09-20

US10700899

Method of fabricating heteroepitaxial microstructures

#27 | 2005-09-01

US20050189323A1

Electricity

Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof

#28 | 2005-07-14

US20050150447A1

Electricity

Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof

#29 | 2005-01-06

US20050003641A1

Chemistry; metallurgy

Method for fabricating an epitaxial substrate

InventorID:

609622 ⎘