Inventor profile of:

Yusuke Mori

City:

Osaka

Country:

Japan

Published Applications:

72

Last publication date:

2026-05-14

Top Assignees for applications by Yusuke Mori

The entities that hold a legal rights for patent applications filed by inventor Mori Yusuke:

Recent patent applications by Mori Yusuke

Yusuke Mori from Osaka, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-14
US20260132538A1
Chemistry; metallurgy

MANUFACTURING METHOD OF GROUP-III NITRIDE SEMICONDUCTOR

#2 | 2026-04-09
US20260100188A1
Physics

ARTIFICIAL INTELLIGENCE BASED IN-FLIGHT ASSISTANTS AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS

#3 | 2026-04-02
US20260092394A1
Chemistry; metallurgy

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

#4 | 2026-03-19
US20260078522A1
Chemistry; metallurgy

GROUP III NITRIDE SINGLE CRYSTAL GROWTH METHOD

#5 | 2025-12-04
US20250369153A1
Chemistry; metallurgy

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

#6 | 2025-04-24
US20250129514A1
Chemistry; metallurgy

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS

#7 | 2024-10-24
US20240352623A1
Chemistry; metallurgy

GROUP-III NITRIDE SUBSTRATE

#8 | 2024-08-29
US20240288748A1
Physics

SECOND HARMONIC GENERATION ELEMENT AND LIGHT SOURCE DEVICE

#9 | 2023-10-12
US20230323563A1
Chemistry; metallurgy

Group-III nitride substrate

#10 | 2022-12-29
US20220411964A1
Chemistry; metallurgy

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

#11 | 2022-12-29
US20220411962A1
Chemistry; metallurgy

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

#12 | 2022-10-27
US20220341056A1
Chemistry; metallurgy

GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING METHOD

#13 | 2022-02-24
US20220056614A1
Chemistry; metallurgy

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5

#14 | 2022-01-06
US20220002904A1
Chemistry; metallurgy

Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

#15 | 2021-12-16
US20210388529A1
Chemistry; metallurgy

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

#16 | 2021-12-16
US20210388528A1
Chemistry; metallurgy

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

#17 | 2021-07-15
US20210217618A1
Electricity

Method of forming nitride semiconductor film

#18 | 2021-03-25
US20210087707A1
Chemistry; metallurgy

Group-III nitride substrate

#19 | 2020-08-20
US20200263320A1
Chemistry; metallurgy

Method for producing group III nitride crystal and seed substrate

#20 | 2020-08-20
US20200263317A1
Chemistry; metallurgy

Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step

#21 | 2020-08-13
US20200255975A1
Chemistry; metallurgy

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5

#22 | 2020-01-16
US20200017993A1
Chemistry; metallurgy

Group-III nitride substrate containing carbon at a surface region thereof

#23 | 2019-09-05
US20190271096A1
Chemistry; metallurgy

Production method for group III nitride crystal

#24 | 2019-03-21
US20190088816A1
Electricity

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

#25 | 2018-04-05
US20180094361A1
Chemistry; metallurgy

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR APPARATUS, AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

#26 | 2017-12-21
US20170362735A1
Chemistry; metallurgy

Crystal growth apparatus and crystal production method

#27 | 2017-11-09
US20170321348A1
Chemistry; metallurgy

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

#28 | 2017-03-16
US20170073840A1
Chemistry; metallurgy

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

#29 | 2017-03-16
US20170073839A1
Chemistry; metallurgy

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

#30 | 2016-09-15
US20160268129A1
Electricity

Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal

#31 | 2016-06-16
US20160168747A1
Chemistry; metallurgy

APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL

#32 | 2016-03-31
US20160090665A1
Chemistry; metallurgy

APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME

#33 | 2016-03-31
US20160090304A1
Chemistry; metallurgy

Method for producing group III nitride crystal

#34 | 2015-11-05
US20150315723A1
Chemistry; metallurgy

NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

#35 | 2015-10-22
US20150297911A1
Human necessities

MEDICAL EQUIPMENT

#36 | 2014-01-30
US20140030549A1
Electricity

GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL

#37 | 2012-07-05
US20120168695A2
Electricity

Group-III element nitride crystal producing method and group-III element nitride crystal

#38 | 2012-06-07
US20120137961A1
Chemistry; metallurgy

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

#39 | 2012-01-05
US20120003446A1
Chemistry; metallurgy

Nitride crystal and method for producing the same

#40 | 2011-03-03
US20110048115A1
Physics

Method for analyzing sample in liquid

#41 | 2011-01-20
US20110012070A2
Electricity

GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL

#42 | 2010-12-02
US20100301358A1
Chemistry; metallurgy

Semiconductor substrate, electronic device, optical device, and production methods therefor

#43 | 2010-10-14
US20100262639A1
Physics

Digital data processor

#44 | 2010-09-30
US20100247418A1
Chemistry; metallurgy

Method for producing group III nitride semiconductor

#45 | 2010-04-15
US20100093157A1
Chemistry; metallurgy

Method for producing group III nitride-based compound semiconductor crystal

#46 | 2010-04-01
US20100078606A1
Electricity

PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL

#47 | 2009-12-03
US20090294909A1
Chemistry; metallurgy

N-type group III nitride-based compound semiconductor and production method therefor

#48 | 2009-08-20
US20090205561A1
Chemistry; metallurgy

METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME

#49 | 2009-07-09
US20090173273A1
Chemistry; metallurgy

Method and apparatus for producing group III nitride based compound semiconductor

#50 | 2009-07-02
US20090169444A1
Chemistry; metallurgy

Apparatus for Producing Group III Nitride Based Compound Semiconductor

#51 | 2009-06-18
US20090155580A1
Chemistry; metallurgy

Production Methods of Semiconductor Crystal and Semiconductor Substrate

#52 | 2009-04-16
US20090095212A1
Chemistry; metallurgy

Method for manufacturing single crystal of nitride

#53 | 2009-03-26
US20090080475A1
Physics

Optical wavelength conversion element having a cesium-lithium-borate crystal

#54 | 2008-11-20
US20080283968A1
Chemistry; metallurgy

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

#55 | 2008-11-06
US20080271665A1
Chemistry; metallurgy

Method for producing group III nitride-based compound semiconductor

#56 | 2008-09-18
US20080223288A1
Chemistry; metallurgy

Crystal growing apparatus

#57 | 2008-09-04
US20080213158A1
Chemistry; metallurgy

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

#58 | 2008-01-31
US20080022921A1
Chemistry; metallurgy

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

#59 | 2008-01-10
US20080008642A1
Chemistry; metallurgy

Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby

#60 | 2007-12-27
US20070296061A1
Chemistry; metallurgy

Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device

#61 | 2007-11-29
US20070272941A1
Chemistry; metallurgy

Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby

#62 | 2007-09-27
US20070221122A1
Chemistry; metallurgy

Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method

#63 | 2007-09-20
US20070215035A1
Chemistry; metallurgy

Method for producing compound single crystal and production apparatus for use therein

#64 | 2007-08-23
US20070196942A1
Chemistry; metallurgy

Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same

#65 | 2007-07-12
US20070157876A1
Chemistry; metallurgy

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

#66 | 2006-07-27
US20060165578A1
Chemistry; metallurgy

Cesium-lithium-borate crystal and its application to frequency conversion of laser light

#67 | 2006-05-18
US20060102066A1
Chemistry; metallurgy

Method for preparing borate-based crystal and laser oscillation apparatus

#68 | 2006-04-18
US10469987
-

Method for flattening surface of oxide crystal to ultra high degree

#69 | 2006-02-28
US9762100
-

Nonlinear optical crystal

#70 | 2005-11-17
US20050254118A1
Physics

Nonlinear optical crystal

#71 | 2005-10-13
US20050225837A1
Physics

Wavelength conversion method, wavelength conversion device, and laser beam machine

#72 | 2005-01-18
US9979505
-

Method and apparatus for growing high quality single crystal

InventorID:

631346 ⎘